CN100552099C - 改进的电化学沉积工艺制备单一c轴取向氧化锌薄膜方法 - Google Patents
改进的电化学沉积工艺制备单一c轴取向氧化锌薄膜方法 Download PDFInfo
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- CN100552099C CN100552099C CNB2007100449665A CN200710044966A CN100552099C CN 100552099 C CN100552099 C CN 100552099C CN B2007100449665 A CNB2007100449665 A CN B2007100449665A CN 200710044966 A CN200710044966 A CN 200710044966A CN 100552099 C CN100552099 C CN 100552099C
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- 238000000034 method Methods 0.000 title claims abstract description 55
- 238000004070 electrodeposition Methods 0.000 title claims abstract description 39
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title description 96
- 239000011787 zinc oxide Substances 0.000 title description 48
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000000151 deposition Methods 0.000 claims abstract description 28
- 230000008021 deposition Effects 0.000 claims abstract description 21
- 238000002203 pretreatment Methods 0.000 claims abstract description 18
- 238000002360 preparation method Methods 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 239000002243 precursor Substances 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 9
- 239000008367 deionised water Substances 0.000 claims description 19
- 229910021641 deionized water Inorganic materials 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 14
- 238000004062 sedimentation Methods 0.000 claims description 10
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Inorganic materials [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 10
- 239000011701 zinc Substances 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 239000004317 sodium nitrate Substances 0.000 claims description 7
- 229940001516 sodium nitrate Drugs 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 claims description 5
- 238000003760 magnetic stirring Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical class [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 239000013535 sea water Substances 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000003599 detergent Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000011812 mixed powder Substances 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- 239000010408 film Substances 0.000 abstract description 70
- 239000000463 material Substances 0.000 abstract description 8
- 239000010409 thin film Substances 0.000 abstract description 7
- 238000002425 crystallisation Methods 0.000 abstract description 3
- 230000008025 crystallization Effects 0.000 abstract description 3
- 230000005622 photoelectricity Effects 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 235000010344 sodium nitrate Nutrition 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- 229960001296 zinc oxide Drugs 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010907 mechanical stirring Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical class [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102024573A (zh) * | 2010-12-18 | 2011-04-20 | 西南交通大学 | 一种PbS量子点敏化ZnO纳米片光阳极的制备方法 |
CN103529098B (zh) * | 2013-10-23 | 2016-08-17 | 江南大学 | 适用于平板电极的恒温电化学工作池 |
CN104193183A (zh) * | 2014-08-01 | 2014-12-10 | 浙江大学 | 一种基于微晶玻璃衬底制备厚膜的方法 |
CN104878426B (zh) * | 2015-04-17 | 2017-06-30 | 东华大学 | 一种电沉积法原位制备(Ga1‑xZnx)(N1‑xOx)柔性光阳极的方法 |
CN104979363A (zh) * | 2015-06-19 | 2015-10-14 | 北京科技大学 | 一种电化学沉积制备薄膜构建的忆阻器及其制备方法 |
CN106653577B (zh) * | 2017-01-23 | 2019-07-26 | 哈尔滨理工大学 | 一种电沉积制备n型半导体ZnO薄膜的方法 |
CN109698282B (zh) * | 2017-10-20 | 2020-10-27 | Tcl科技集团股份有限公司 | 一种氧化物薄膜的制备方法与qled器件 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6733895B2 (en) * | 2001-09-28 | 2004-05-11 | Murata Manufacturing Co., Ltd. | ZnO film, method for manufacturing the same, and luminescent element including the same |
JP2004347717A (ja) * | 2003-05-20 | 2004-12-09 | Seiko Epson Corp | フォトマスクおよびその製造方法、フォトマスク製造装置、並びにパターン形成方法 |
CN1897236A (zh) * | 2005-08-22 | 2007-01-17 | 中国科学院长春光学精密机械与物理研究所 | 用电化学沉积制备锰掺杂的氧化锌薄膜和纳米柱的方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6733895B2 (en) * | 2001-09-28 | 2004-05-11 | Murata Manufacturing Co., Ltd. | ZnO film, method for manufacturing the same, and luminescent element including the same |
JP2004347717A (ja) * | 2003-05-20 | 2004-12-09 | Seiko Epson Corp | フォトマスクおよびその製造方法、フォトマスク製造装置、並びにパターン形成方法 |
CN1897236A (zh) * | 2005-08-22 | 2007-01-17 | 中国科学院长春光学精密机械与物理研究所 | 用电化学沉积制备锰掺杂的氧化锌薄膜和纳米柱的方法 |
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Assignee: Yixing Prince Ceramics Co.,Ltd. Assignor: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES Contract record no.: 2010320000760 Denomination of invention: Modified method for preparing single c-axle oriented zinc oxide film by electrochemical deposition process Granted publication date: 20091021 License type: Exclusive License Open date: 20080130 Record date: 20100621 |
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Assignee: Yixing Prince Ceramics Co.,Ltd. Assignor: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES Contract record no.: 2010320000760 Date of cancellation: 20161128 |
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Effective date of registration: 20170106 Address after: 215499 Changchun South Road, Jiangsu, No. 238, No. Patentee after: SUZHOU Research Institute SHANGHAI INSTITUTE OF CERAMICS CHINESE ACADEMY OF SCIENCES Address before: 200050 Dingxi Road, Shanghai, Changning District, No. 1295 Patentee before: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES |
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Address after: 215400 No.6 Liangfu Road, Taicang City, Suzhou City, Jiangsu Province Patentee after: Jiangsu Institute of advanced inorganic materials Address before: No. 238 Changchun South Road, Taicang City, Jiangsu Province, 215499 Patentee before: SUZHOU Research Institute SHANGHAI INSTITUTE OF CERAMICS CHINESE ACADEMY OF SCIENCES |