CN100520575C - 对0相位区域附加并行线以增强透明电场相移位掩模的方法 - Google Patents

对0相位区域附加并行线以增强透明电场相移位掩模的方法 Download PDF

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Publication number
CN100520575C
CN100520575C CNB028247825A CN02824782A CN100520575C CN 100520575 C CN100520575 C CN 100520575C CN B028247825 A CNB028247825 A CN B028247825A CN 02824782 A CN02824782 A CN 02824782A CN 100520575 C CN100520575 C CN 100520575C
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CN
China
Prior art keywords
phase
phase place
edge
zone
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028247825A
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English (en)
Chinese (zh)
Other versions
CN1701279A (zh
Inventor
T·P·卢康科
C·A·斯彭斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries US Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of CN1701279A publication Critical patent/CN1701279A/zh
Application granted granted Critical
Publication of CN100520575C publication Critical patent/CN100520575C/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNB028247825A 2001-12-11 2002-12-09 对0相位区域附加并行线以增强透明电场相移位掩模的方法 Expired - Fee Related CN100520575C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/016,702 US6675369B1 (en) 2001-12-11 2001-12-11 Method of enhancing clear field phase shift masks by adding parallel line to phase 0 region
US10/016,702 2001-12-11

Publications (2)

Publication Number Publication Date
CN1701279A CN1701279A (zh) 2005-11-23
CN100520575C true CN100520575C (zh) 2009-07-29

Family

ID=21778489

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028247825A Expired - Fee Related CN100520575C (zh) 2001-12-11 2002-12-09 对0相位区域附加并行线以增强透明电场相移位掩模的方法

Country Status (9)

Country Link
US (1) US6675369B1 (https=)
EP (1) EP1454192B1 (https=)
JP (1) JP2005513519A (https=)
KR (1) KR100931707B1 (https=)
CN (1) CN100520575C (https=)
AU (1) AU2002357141A1 (https=)
DE (1) DE60226773D1 (https=)
TW (1) TWI265371B (https=)
WO (1) WO2003050617A2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534224B2 (en) * 2001-01-30 2003-03-18 Advanced Micro Devices, Inc. Phase shift mask and system and method for making the same
US6711732B1 (en) * 2002-07-26 2004-03-23 Taiwan Semiconductor Manufacturing Company Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era
US7149998B2 (en) * 2002-12-30 2006-12-12 Synopsys Inc. Lithography process modeling of asymmetric patterns
US7615318B2 (en) * 2004-10-22 2009-11-10 Freescale Semiconductor Inc. Printing of design features using alternating PSM technology with double mask exposure strategy
US8056026B2 (en) * 2008-12-14 2011-11-08 International Business Machines Corporation Determining manufacturability of lithographic mask by selecting target edge pairs used in determining a manufacturing penalty of the lithographic mask
US8056023B2 (en) * 2008-12-14 2011-11-08 International Business Machines Corporation Determining manufacturability of lithographic mask by reducing target edge pairs used in determining a manufacturing penalty of the lithographic mask

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5521031A (en) * 1994-10-20 1996-05-28 At&T Corp. Pattern delineating apparatus for use in the EUV spectrum
US5573890A (en) * 1994-07-18 1996-11-12 Advanced Micro Devices, Inc. Method of optical lithography using phase shift masking

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3153230B2 (ja) 1990-09-10 2001-04-03 株式会社日立製作所 パタン形成方法
JP3334911B2 (ja) 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法
JP3078163B2 (ja) 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
US5619059A (en) 1994-09-28 1997-04-08 National Research Council Of Canada Color deformable mirror device having optical thin film interference color coatings
US5858580A (en) 1997-09-17 1999-01-12 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US6228539B1 (en) 1996-09-18 2001-05-08 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5807649A (en) 1996-10-31 1998-09-15 International Business Machines Corporation Lithographic patterning method and mask set therefor with light field trim mask
US5780187A (en) 1997-02-26 1998-07-14 Micron Technology, Inc. Repair of reflective photomask used in semiconductor process
US6013399A (en) 1998-12-04 2000-01-11 Advanced Micro Devices, Inc. Reworkable EUV mask materials
JP3257593B2 (ja) * 1999-02-05 2002-02-18 日本電気株式会社 半導体装置の製造方法
JP3335138B2 (ja) * 1999-06-04 2002-10-15 キヤノン株式会社 露光方法、露光装置、およびデバイス製造方法
US6410193B1 (en) 1999-12-30 2002-06-25 Intel Corporation Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength
JP2001228599A (ja) * 2000-02-21 2001-08-24 Matsushita Electric Ind Co Ltd 補助パターン生成方法および半導体マスクレイアウトパターンの自動生成方法
US6338922B1 (en) * 2000-05-08 2002-01-15 International Business Machines Corporation Optimized alternating phase shifted mask design

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5573890A (en) * 1994-07-18 1996-11-12 Advanced Micro Devices, Inc. Method of optical lithography using phase shift masking
US5521031A (en) * 1994-10-20 1996-05-28 At&T Corp. Pattern delineating apparatus for use in the EUV spectrum

Also Published As

Publication number Publication date
JP2005513519A (ja) 2005-05-12
KR100931707B1 (ko) 2009-12-14
US6675369B1 (en) 2004-01-06
EP1454192B1 (en) 2008-05-21
WO2003050617A2 (en) 2003-06-19
WO2003050617A3 (en) 2003-12-04
AU2002357141A1 (en) 2003-06-23
KR20040065265A (ko) 2004-07-21
EP1454192A2 (en) 2004-09-08
DE60226773D1 (de) 2008-07-03
CN1701279A (zh) 2005-11-23
TW200301844A (en) 2003-07-16
TWI265371B (en) 2006-11-01

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Owner name: ADVANCED MICRO DEVICES INC

Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC.

Effective date: 20100709

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TR01 Transfer of patent right

Effective date of registration: 20100709

Address after: Grand Cayman, Cayman Islands

Patentee after: Globalfoundries Semiconductor Inc.

Address before: American California

Patentee before: Advanced Micro Devices Inc.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210617

Address after: California, USA

Patentee after: Lattice chip (USA) integrated circuit technology Co.,Ltd.

Address before: Greater Cayman Islands, British Cayman Islands

Patentee before: GLOBALFOUNDRIES Inc.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090729

Termination date: 20201209

CF01 Termination of patent right due to non-payment of annual fee