JP2005513519A - 位相が０°の領域に平行なラインを追加することによって、クリアなフィールドの位相シフト・マスクを改善する方法 - Google Patents

位相が０°の領域に平行なラインを追加することによって、クリアなフィールドの位相シフト・マスクを改善する方法 Download PDF

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Publication number
JP2005513519A
JP2005513519A JP2003551612A JP2003551612A JP2005513519A JP 2005513519 A JP2005513519 A JP 2005513519A JP 2003551612 A JP2003551612 A JP 2003551612A JP 2003551612 A JP2003551612 A JP 2003551612A JP 2005513519 A JP2005513519 A JP 2005513519A
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Japan
Prior art keywords
region
phase
edge
mask
critical
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Pending
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JP2003551612A
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English (en)
Japanese (ja)
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JP2005513519A5 (https=
Inventor
ピー． ルーカンク トッド
エイ． スペンス クリストファー
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2005513519A publication Critical patent/JP2005513519A/ja
Publication of JP2005513519A5 publication Critical patent/JP2005513519A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2003551612A 2001-12-11 2002-12-09 位相が０°の領域に平行なラインを追加することによって、クリアなフィールドの位相シフト・マスクを改善する方法 Pending JP2005513519A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/016,702 US6675369B1 (en) 2001-12-11 2001-12-11 Method of enhancing clear field phase shift masks by adding parallel line to phase 0 region
PCT/US2002/039483 WO2003050617A2 (en) 2001-12-11 2002-12-09 Method of enhancing clear field phase shift masks by adding parallel line to phase 0 region

Publications (2)

Publication Number Publication Date
JP2005513519A true JP2005513519A (ja) 2005-05-12
JP2005513519A5 JP2005513519A5 (https=) 2006-01-26

Family

ID=21778489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003551612A Pending JP2005513519A (ja) 2001-12-11 2002-12-09 位相が０°の領域に平行なラインを追加することによって、クリアなフィールドの位相シフト・マスクを改善する方法

Country Status (9)

Country Link
US (1) US6675369B1 (https=)
EP (1) EP1454192B1 (https=)
JP (1) JP2005513519A (https=)
KR (1) KR100931707B1 (https=)
CN (1) CN100520575C (https=)
AU (1) AU2002357141A1 (https=)
DE (1) DE60226773D1 (https=)
TW (1) TWI265371B (https=)
WO (1) WO2003050617A2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534224B2 (en) * 2001-01-30 2003-03-18 Advanced Micro Devices, Inc. Phase shift mask and system and method for making the same
US6711732B1 (en) * 2002-07-26 2004-03-23 Taiwan Semiconductor Manufacturing Company Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era
US7149998B2 (en) * 2002-12-30 2006-12-12 Synopsys Inc. Lithography process modeling of asymmetric patterns
US7615318B2 (en) * 2004-10-22 2009-11-10 Freescale Semiconductor Inc. Printing of design features using alternating PSM technology with double mask exposure strategy
US8056026B2 (en) * 2008-12-14 2011-11-08 International Business Machines Corporation Determining manufacturability of lithographic mask by selecting target edge pairs used in determining a manufacturing penalty of the lithographic mask
US8056023B2 (en) * 2008-12-14 2011-11-08 International Business Machines Corporation Determining manufacturability of lithographic mask by reducing target edge pairs used in determining a manufacturing penalty of the lithographic mask

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3153230B2 (ja) 1990-09-10 2001-04-03 株式会社日立製作所 パタン形成方法
JP3334911B2 (ja) 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法
JP3078163B2 (ja) 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
US5573890A (en) 1994-07-18 1996-11-12 Advanced Micro Devices, Inc. Method of optical lithography using phase shift masking
US5619059A (en) 1994-09-28 1997-04-08 National Research Council Of Canada Color deformable mirror device having optical thin film interference color coatings
US5521031A (en) * 1994-10-20 1996-05-28 At&T Corp. Pattern delineating apparatus for use in the EUV spectrum
US5858580A (en) 1997-09-17 1999-01-12 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US6228539B1 (en) 1996-09-18 2001-05-08 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5807649A (en) 1996-10-31 1998-09-15 International Business Machines Corporation Lithographic patterning method and mask set therefor with light field trim mask
US5780187A (en) 1997-02-26 1998-07-14 Micron Technology, Inc. Repair of reflective photomask used in semiconductor process
US6013399A (en) 1998-12-04 2000-01-11 Advanced Micro Devices, Inc. Reworkable EUV mask materials
JP3257593B2 (ja) * 1999-02-05 2002-02-18 日本電気株式会社 半導体装置の製造方法
JP3335138B2 (ja) * 1999-06-04 2002-10-15 キヤノン株式会社 露光方法、露光装置、およびデバイス製造方法
US6410193B1 (en) 1999-12-30 2002-06-25 Intel Corporation Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength
JP2001228599A (ja) * 2000-02-21 2001-08-24 Matsushita Electric Ind Co Ltd 補助パターン生成方法および半導体マスクレイアウトパターンの自動生成方法
US6338922B1 (en) * 2000-05-08 2002-01-15 International Business Machines Corporation Optimized alternating phase shifted mask design

Also Published As

Publication number Publication date
KR100931707B1 (ko) 2009-12-14
CN100520575C (zh) 2009-07-29
US6675369B1 (en) 2004-01-06
EP1454192B1 (en) 2008-05-21
WO2003050617A2 (en) 2003-06-19
WO2003050617A3 (en) 2003-12-04
AU2002357141A1 (en) 2003-06-23
KR20040065265A (ko) 2004-07-21
EP1454192A2 (en) 2004-09-08
DE60226773D1 (de) 2008-07-03
CN1701279A (zh) 2005-11-23
TW200301844A (en) 2003-07-16
TWI265371B (en) 2006-11-01

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