CN100517706C - 辐射源和用于制造透镜模的方法 - Google Patents

辐射源和用于制造透镜模的方法 Download PDF

Info

Publication number
CN100517706C
CN100517706C CNB018137725A CN01813772A CN100517706C CN 100517706 C CN100517706 C CN 100517706C CN B018137725 A CNB018137725 A CN B018137725A CN 01813772 A CN01813772 A CN 01813772A CN 100517706 C CN100517706 C CN 100517706C
Authority
CN
China
Prior art keywords
semiconductor chip
lens
radiation source
lenticule
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB018137725A
Other languages
English (en)
Other versions
CN1447983A (zh
Inventor
G·博纳
W·格拉曼
P·克罗莫蒂斯
W·马希尔
W·施佩斯
G·维特尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN1447983A publication Critical patent/CN1447983A/zh
Application granted granted Critical
Publication of CN100517706C publication Critical patent/CN100517706C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G02B3/0031—Replication or moulding, e.g. hot embossing, UV-casting, injection moulding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • B29D11/00278—Lenticular sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • B29D11/00365—Production of microlenses
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V5/00—Refractors for light sources
    • F21V5/04—Refractors for light sources of lens shape
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Power Engineering (AREA)
  • Ophthalmology & Optometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Led Devices (AREA)

Abstract

本发明涉及一种辐射源，它具有一个半导体芯片组，这些芯片位于一个布置在六方网格结构里的微型透镜(8)的组下面。该辐射源的特征是辐射功率和辐射密度大。

Description

辐射源和用于制造透镜模的方法
技术领域
本发明涉及一种辐射源，它具有许多相互并排布置的发出辐射的半导体芯片。
本发明还涉及一种用来制造一个适用于加工微型透镜的组合场的透镜模的方法。
背景技术
辐射源，例如象发光二极管，通常具有一个注塑在透明的透镜体里的半导体芯片。还已众所周知的是，通过设置许多半导体芯片来提高这种类型辐射源的辐射功率。这类辐射源通常有一个由一个透镜组成的聚光装置。这类辐射源的辐射密度当然往往并不令人满意，这是因为这样一种光照强烈的辐射源伸展的空间范围较小。
发明内容
从这种技术现状出发，本发明的任务是提出一种高辐射强度的辐射源。
按照本发明提供了一种辐射源，，其具有许多相互并排布置的发出辐射的半导体芯片的辐射源，其中半导体芯片直接布置在同一块印刷电路板上，并且在半导体芯片前的射出方向上布置有一个构成六方形网格的透镜的组。。
由于透镜成六方型布置所配属的这些半导体芯片就可以实现大的表面密度。相应地该辐射源的辐射强度也就大。由于这些透镜通常由球体部分构成，因而可以选择具有大半径的球体部分用于透镜。因而半导体芯片的发出辐射的活化层大部分都位于配属于各自球体的威氏(Weierstrass’schen)球内。因而各个半导体芯片都有高的辐射效率。
本发明另外的任务是提出一种用于制造一种适于制成一个透镜组的透镜模的合理的方法。
按照本发明提供了一种上述方法，其中使透镜模在球的一个由一个六方形的托座固定住的群组上成型。
若这些球密集地布置，那么通过该六方形托座就使球的群组几乎自动地置入一个六方形网格结构里。因此足够可以使托座完全用待成型的球来填满。
本发明的其它合理的技术方案见下文。
附图说明
以下按附图对本发明详细地加以说明。图示为：
图1是一个装有半导体芯片并且已经焊接好的用于按本发明的辐射源的印刷电路板的俯视图；
图2是图1所示印刷电路板的一个放大的横断面视图；
图3是一个透镜组的俯视图；
图4是穿过一个可用于制造一种用于制成微型透镜组的注模的横截面图；
图5是图4所示注模的俯视图；
图6是穿过另外一个用于制成该注模的装置的一个横断面图；
图7是穿过用于制造微透镜组的注塑装置的一个横断面图；和
图8是表示出辐射功率与在半导体芯片的上棱边和对应配属的半球形的微透镜之间的间距的相互关系的图表。
具体实施方式
图1表示了一个由Al2O3或Si制成的印刷电路板1的俯视图。在印刷电路板1上设有连接接点2，其中焊线3通向接点位置4，在这些接点位置上设有连接线5，这些连接线又通向芯片接触表面6。在芯片接触面6上装有半导体芯片7并分别成行成列地进行焊接连接。
图2表示了穿过装有微透镜8的焊线板1的一个横断面的放大部分断面。可以看到，半导体芯片7的一个底面9分别放置在芯片接触面6上。在半导体芯片7的顶面10上分别有连接线5，这些线通向一个相邻的芯片接触面6或者其中一个接点位置4。
微透镜8是半径为R的半球体。微透镜8的几何中心位于离半导体芯片7的顶面距离ΔX处。距离ΔX是如此选择的，以使半导体芯片7发出辐射的各活化层至少有一半位于半径为R/n的威氏球内，其中n是用于微透镜8的材料的折射率。威氏球的中心与这些微透镜8的中心相重合。在威氏球内所产生的辐射可以射出微透镜8。因而其优点是：半导体芯片7的活化层的尽可能大的一部分各自位于威氏球内。因此选择微透镜8的半径尽可能地大是有意义的。与此对立的是在半导体芯片7之间的距离也必须相应选得大。但是在半导体芯片7之间较大的距离会造成较小的辐射强度。因此就尽力使微透镜8之间的距离尽可能地小。图3所示的微透镜8在一个六方形网格结构中的布置是微透镜8的可能的最密的布置，并且能够实现大的辐射功率，同时有大的辐射强度。
较有利的是微透镜8由人造树脂注塑而成。该制造方法按如下进行。
首先制成第一模板11，如图4所示它有一个横断面为图5中可见到的六方形的中央芯轴12。芯轴12布置在一个托座13上。在托座13附近有螺栓14。在第一模板11上还装有一个保持框15，该保持框在其内侧上具有凹槽16。由保持框15所限制住的内腔填充有硅树脂。这就生成一个硅树脂框17，该框在其中心具有一个横断面为六方形的孔。硅树脂框17啮入凹槽16里并因而能够简单地与保持框15一起安放在一个图6所示的第二模板19上。这里也有螺栓14，它用于对准在第二模板19上的保持框15和硅树脂框17。因此硅树脂框17就位于第二模板19上，从而使硅树脂框17的孔18与第二模板19上的一个托座20对中。托座20用其侧连板21占据第一模板11的托座13的空腔。它也同样具有一个六方形横断面。在托座20里致密布置地放入了小球22。这些小球22的半径基本上等于待制造的微透镜8的半径。由于托座20有一个六方形的横断面，而且由于小球22致密地布置，因而这些小球22就按照一种六方形的网格构造布置。
接着用硅树脂装填孔18。这就成了图7所示的，在一个注塑装置23里所示的微透镜模24。注塑装置23有一个吸入支管25，在其上面放置了一块基板26，该基板固定住印刷电路板1。为此目的设有一个中央抽吸孔27，该孔通向印刷电路板1。在基板26之上是带微透镜模24的保持框15。这二者部分地由一块压板28盖住，该压板通过一个未示出的螺钉连接件与基板26相连接，并保证使微透镜模24可靠地坐在基板26上。
螺栓14在微透镜模24里留有通孔29，这些通孔用于将人造树脂装入印刷电路板1之上的微透镜24的空心腔里。
显然可看出，印刷电路板1在微透镜模24下面已经设有半导体芯片3并已连接焊好。
最后通过些通孔填入浇注树脂。这样就使微透镜模24和焊线3之间的空腔被填满并形成微透镜8。
最后，在图8中表示了一个图表，其中表示出了在一个半开口角为60°，即开口角为120°的立体角上的辐射功率Φ与间距ΔX之间的关系。
图8包含了计算的结果。这些计算用一个底面积为200μm×200μm和高度为250μm的半导体芯片7来进行。假定半导体芯片从其顶边10发射出其辐射功率的70％。其余30％则应该由半导体芯片7的侧面射出。一黑体在2000K时的光谱被作为光谱。对二类浇注树脂进行了计算，半导体芯片7埋入在这些树脂里。曾经对于一种浇注树脂采用n＝1.55的折射率，对另一种树脂采用n＝1.87的折射率。计算出的曲线30，31和33反映了在计算指数n＝1.55时，微透镜8的半径分别为250μm，300μm和350μm的结果。曲线33，34和35反映了树脂的折射率n＝1.78时，微透镜8的半径为250μm，300μm和350μm的结果。最后线36表示了无微透镜8时所期望的结果。
微透镜8的直径达500μm，600μm和700μm。根据图8所示显然可见，在间距ΔX为0.1mm时在所检测的立体角内的辐射功率被认为是最大值。那时的辐射功率大致为没有微透镜8时的二倍。在此间距时半导体芯片7的活化层的大部分也都位于微透镜8的威氏球内。
由下表1也可以看到微透镜8呈六方形布置的优点：
表1
  布置方式   正方形   六方形   六方形
  透镜直径   600μm   600μm   700μm
  每单位元件的面积   0.36mm<sup>2</sup>   0.312mm<sup>2</sup>   0.42mm<sup>2</sup>
  70°半角时的总辐射功率   0.4777W   0.45919W   0.48668W
  单位面积的辐射功率   1.3269W/mm<sup>2</sup>   1.4718W/mm<sup>2</sup>   1.1588W/mm<sup>2</sup>
由表1明显可见，加大微透镜8的半径并不一定能提高单位面积的辐射功率。因为由于微透镜8的较大的半径虽然使半导体芯片7的活化层的较大部分位于威氏球内，但是为此使半导体芯片7的间距增大了，因而使辐射强度降低了。
出于实际使用的考虑，若微透镜8的直径选为700μm仍然是有利的，这是因为否则的话在将半导体芯片7焊接到芯片接触面6上时，以及在焊接连接这些连接线5时都可能出现问题。此外通常的浇注树脂在硬化时都要收缩，因此硬化的微透镜大致总要比微透镜模24的相应形状小6％。

Claims (7)

1.具有许多相互并排布置的发出辐射的半导体芯片(7)的辐射源，其中所述半导体芯片直接布置在同一块印刷电路板(1)上，并且在所述半导体芯片(7)前的射出方向上布置有一个构成六方形网格的透镜(8)的组，其中，所述透镜彼此间整体地形成一个透镜网格体，并且所述半导体芯片被所述透镜网格体封装起来。
2.按权利要求1所述的辐射源，其特征在于，所述透镜(8)由半球构成。
3.按权利要求1或2所述的辐射源，其特征在于，所述透镜(8)布置在六方形的最致密的网格里。
4.按权利要求1或2所述的辐射源，其特征在于，该网格的轮廓是一个六方形的构造。
5.按权利要求1或2所述的辐射源，其特征在于，所述半导体芯片(7)成行地焊接。
6.按权利要求1或2所述的辐射源，其特征在于，所述半导体芯片(7)的色组在不同的波长时具有其发射最大值。
7.按权利要求6所述的辐射源，其特征在于，该色组成行地布置。
CNB018137725A 2000-08-04 2001-07-30 辐射源和用于制造透镜模的方法 Expired - Fee Related CN100517706C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10038213A DE10038213A1 (de) 2000-08-04 2000-08-04 Strahlungsquelle und Verfahren zur Herstellung einer Linsensform
DE10038213.4 2000-08-04

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNA2008100012624A Division CN101219568A (zh) 2000-08-04 2001-07-30 透镜模的生产方法

Publications (2)

Publication Number Publication Date
CN1447983A CN1447983A (zh) 2003-10-08
CN100517706C true CN100517706C (zh) 2009-07-22

Family

ID=7651403

Family Applications (2)

Application Number Title Priority Date Filing Date
CNA2008100012624A Pending CN101219568A (zh) 2000-08-04 2001-07-30 透镜模的生产方法
CNB018137725A Expired - Fee Related CN100517706C (zh) 2000-08-04 2001-07-30 辐射源和用于制造透镜模的方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CNA2008100012624A Pending CN101219568A (zh) 2000-08-04 2001-07-30 透镜模的生产方法

Country Status (7)

Country Link
US (2) US7262437B2 (zh)
EP (1) EP1320890A2 (zh)
JP (2) JP2004506321A (zh)
CN (2) CN101219568A (zh)
DE (1) DE10038213A1 (zh)
TW (1) TW538255B (zh)
WO (1) WO2002013231A2 (zh)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2329756A (en) 1997-09-25 1999-03-31 Univ Bristol Assemblies of light emitting diodes
DE10051159C2 (de) * 2000-10-16 2002-09-19 Osram Opto Semiconductors Gmbh LED-Modul, z.B. Weißlichtquelle
JP2005524989A (ja) 2002-05-08 2005-08-18 フォーセン テクノロジー インク 高効率固体光源及びその使用方法及びその製造方法
US8063575B2 (en) 2002-07-04 2011-11-22 Tridonic Jennersdorf Gmbh Current supply for luminescent diodes
DE10230103B4 (de) * 2002-07-04 2012-10-31 Tridonic Ag Stromversorgung für Lumineszenzdioden
JP2005534201A (ja) 2002-07-25 2005-11-10 ジョナサン エス． ダーム、 発光ダイオードを硬化用に使用するための方法および装置
WO2004038759A2 (en) 2002-08-23 2004-05-06 Dahm Jonathan S Method and apparatus for using light emitting diodes
KR100697803B1 (ko) * 2002-08-29 2007-03-20 시로 사카이 복수의 발광 소자를 갖는 발광 장치
US7633093B2 (en) * 2003-05-05 2009-12-15 Lighting Science Group Corporation Method of making optical light engines with elevated LEDs and resulting product
US7777235B2 (en) * 2003-05-05 2010-08-17 Lighting Science Group Corporation Light emitting diodes with improved light collimation
US7300182B2 (en) * 2003-05-05 2007-11-27 Lamina Lighting, Inc. LED light sources for image projection systems
US7528421B2 (en) * 2003-05-05 2009-05-05 Lamina Lighting, Inc. Surface mountable light emitting diode assemblies packaged for high temperature operation
US7095053B2 (en) * 2003-05-05 2006-08-22 Lamina Ceramics, Inc. Light emitting diodes packaged for high temperature operation
US7819550B2 (en) 2003-10-31 2010-10-26 Phoseon Technology, Inc. Collection optics for led array with offset hemispherical or faceted surfaces
US7964883B2 (en) * 2004-02-26 2011-06-21 Lighting Science Group Corporation Light emitting diode package assembly that emulates the light pattern produced by an incandescent filament bulb
TWI312583B (en) 2004-03-18 2009-07-21 Phoseon Technology Inc Micro-reflectors on a substrate for high-density led array
US20050225222A1 (en) * 2004-04-09 2005-10-13 Joseph Mazzochette Light emitting diode arrays with improved light extraction
WO2006001928A1 (en) * 2004-06-15 2006-01-05 Henkel Corporation High power led electro-optic assembly
US7252408B2 (en) * 2004-07-19 2007-08-07 Lamina Ceramics, Inc. LED array package with internal feedback and control
JP3802910B2 (ja) * 2004-09-13 2006-08-02 ローム株式会社 半導体発光装置
US20090057697A1 (en) * 2004-10-28 2009-03-05 Henkel Corporation Led assembly with led-reflector interconnect
JP4800324B2 (ja) 2004-12-30 2011-10-26 フォーセン テクノロジー インク 露光装置
US7821023B2 (en) 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
US9793247B2 (en) 2005-01-10 2017-10-17 Cree, Inc. Solid state lighting component
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
DE102005041064B4 (de) * 2005-08-30 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zu dessen Herstellung
JP4521350B2 (ja) * 2005-10-13 2010-08-11 オリンパス株式会社 レンズアレイ用型、レンズアレイ用型の製造方法
TW200741134A (en) * 2005-12-12 2007-11-01 Koninkl Philips Electronics Nv Optical device for creating an illumination window
US9335006B2 (en) 2006-04-18 2016-05-10 Cree, Inc. Saturated yellow phosphor converted LED and blue converted red LED
US10295147B2 (en) 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
US8115213B2 (en) 2007-02-08 2012-02-14 Phoseon Technology, Inc. Semiconductor light sources, systems, and methods
JP5193490B2 (ja) 2007-04-20 2013-05-08 株式会社ミツトヨ 追尾式レーザ干渉計による測定方法
WO2009041466A1 (ja) * 2007-09-27 2009-04-02 Tokyo Electron Limited アニール装置
JP2009099925A (ja) * 2007-09-27 2009-05-07 Tokyo Electron Ltd アニール装置
DE102007059548A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Auskoppellinse für ein optoelektronisches Bauelement
TWI384651B (zh) * 2008-08-20 2013-02-01 Au Optronics Corp 發光二極體結構及其製造方法
US9425172B2 (en) * 2008-10-24 2016-08-23 Cree, Inc. Light emitter array
KR100998017B1 (ko) * 2009-02-23 2010-12-03 삼성엘이디 주식회사 발광소자 패키지용 렌즈 및 이를 구비하는 발광소자 패키지
US8678612B2 (en) 2009-04-14 2014-03-25 Phoseon Technology, Inc. Modular light source
US8653737B2 (en) 2009-04-14 2014-02-18 Phoseon Technology, Inc. Controller for semiconductor lighting device
CN102577635B (zh) * 2009-09-17 2015-03-25 皇家飞利浦电子股份有限公司 光源模块和发光设备
CN102575829A (zh) 2009-10-14 2012-07-11 3M创新有限公司 光源
US8465172B2 (en) 2009-12-17 2013-06-18 Phoseon Technology, Inc. Lighting module with diffractive optical element
JP5526876B2 (ja) * 2010-03-09 2014-06-18 東京エレクトロン株式会社 加熱装置及びアニール装置
US8669697B2 (en) 2010-03-11 2014-03-11 Phoseon Technology, Inc. Cooling large arrays with high heat flux densities
DE102010027875A1 (de) * 2010-04-16 2011-10-20 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
US8591078B2 (en) 2010-06-03 2013-11-26 Phoseon Technology, Inc. Microchannel cooler for light emitting diode light fixtures
CN203192853U (zh) * 2010-10-26 2013-09-11 东芝照明技术株式会社 发光装置以及照明装置
US9357592B2 (en) 2010-11-18 2016-05-31 Phoseon Technology, Inc. Light source temperature monitor and control
US9786811B2 (en) 2011-02-04 2017-10-10 Cree, Inc. Tilted emission LED array
US10842016B2 (en) 2011-07-06 2020-11-17 Cree, Inc. Compact optically efficient solid state light source with integrated thermal management
US8872137B2 (en) 2011-09-15 2014-10-28 Phoseon Technology, Inc. Dual elliptical reflector with a co-located foci for curing optical fibers
US9126432B2 (en) 2011-09-20 2015-09-08 Phoseon Technology, Inc. Differential Ultraviolet curing using external optical elements
JP6017573B2 (ja) 2011-10-12 2016-11-02 フォセオン テクノロジー， インコーポレイテッドＰｈｏｓｅｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 光ファイバーを硬化するための共同設置焦点を有する多重光収集とレンズの組合せ
US8823279B2 (en) 2011-10-27 2014-09-02 Phoseon Technology, Inc. Smart FET circuit
US8931928B2 (en) 2011-11-01 2015-01-13 Phoseon Technology, Inc. Removable window frame for lighting module
US8851715B2 (en) 2012-01-13 2014-10-07 Phoseon Technology, Inc. Lamp ventilation system
US8888336B2 (en) 2012-02-29 2014-11-18 Phoseon Technology, Inc. Air deflectors for heat management in a lighting module
US8678622B2 (en) 2012-04-27 2014-03-25 Phoseon Technology, Inc. Wrap-around window for lighting module
CN103511975A (zh) * 2013-10-25 2014-01-15 浙江晶日照明科技有限公司 一种适用于led洗墙灯的出光器件
CN104566210A (zh) * 2013-10-25 2015-04-29 浚洸光学科技股份有限公司 微结构的排列方法
EP3966873B1 (en) * 2019-05-09 2022-12-14 Signify Holding B.V. Lighting system including a truncated ball lens
US11149936B2 (en) * 2020-02-18 2021-10-19 Exposure Illumination Architects, Inc. Uniformly lit planar field of illumination
CN111169058B (zh) * 2020-04-13 2020-07-03 成都菲斯特科技有限公司 菲涅尔透镜模具及其制备方法和菲涅尔透镜的制备方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1203357A (en) 1968-12-13 1970-08-26 Rlm Res Corp Production of lenticular sheets for integral photography
US4022855A (en) * 1975-03-17 1977-05-10 Eastman Kodak Company Method for making a plastic optical element having a gradient index of refraction
US4165474A (en) * 1977-12-27 1979-08-21 Texas Instruments Incorporated Optoelectronic displays using uniformly spaced arrays of semi-sphere light-emitting diodes
JPS6179269A (ja) 1984-09-26 1986-04-22 Hitachi Micro Comput Eng Ltd 光通信装置
JPS62262023A (ja) 1986-05-09 1987-11-14 Hitachi Ltd 液晶表示装置
JPS6332972A (ja) 1986-07-26 1988-02-12 Mitsubishi Cable Ind Ltd ランプ
DE3827083A1 (de) 1988-08-10 1990-02-15 Telefunken Electronic Gmbh Flaechenhafter strahler
JPH038204A (ja) 1989-06-05 1991-01-16 Nippon Denyo Kk Ｌｅｄランプ装置
JP2626305B2 (ja) 1991-04-23 1997-07-02 日本ビクター株式会社 蠅の目レンズ板のスタンパの製作方法
JP2900000B2 (ja) 1991-07-12 1999-06-02 タキロン株式会社 発光表示体及びその製造方法
US5439621A (en) * 1993-04-12 1995-08-08 Minnesota Mining And Manufacturing Company Method of making an array of variable focal length microlenses
US5396350A (en) * 1993-11-05 1995-03-07 Alliedsignal Inc. Backlighting apparatus employing an array of microprisms
US5528474A (en) * 1994-07-18 1996-06-18 Grote Industries, Inc. Led array vehicle lamp
WO1996007523A1 (en) 1994-09-09 1996-03-14 Philips Electronics N.V. Method of manufacturing a mould for use in the manufacture of an optical element comprising optical sub-elements mutually arranged in a pattern, and device for implementing such a method
JP2951858B2 (ja) * 1994-10-17 1999-09-20 シャープ株式会社 投影型カラー液晶表示装置
US5600148A (en) * 1994-12-30 1997-02-04 Honeywell Inc. Low power infrared scene projector array and method of manufacture
JPH08227603A (ja) 1995-02-21 1996-09-03 Koito Mfg Co Ltd 車輌用表示ランプ
DE19621148A1 (de) 1996-05-14 1997-12-04 Magna Reflex Holding Gmbh Leuchtelement
JPH1012926A (ja) 1996-06-20 1998-01-16 Toyoda Gosei Co Ltd 全色発光型発光ダイオードランプ及びディスプレイ装置
EP0976589A4 (en) * 1997-03-18 2006-11-08 Acol Technologies S A LUMINESCENT DIODE
JP4171933B2 (ja) * 1997-09-12 2008-10-29 ソニー株式会社 平面型レンズの製造方法
BR9813223A (pt) 1997-09-25 2000-08-29 Univ Bristol Dispositivo de radiação ótica
US6339503B1 (en) * 1998-11-06 2002-01-15 Oni Systems Corp. Optical interconnect using microlens/minilens relay
US6665060B1 (en) * 1999-10-29 2003-12-16 Cytyc Corporation Cytological imaging system and method
DE10051159C2 (de) * 2000-10-16 2002-09-19 Osram Opto Semiconductors Gmbh LED-Modul, z.B. Weißlichtquelle
US6715901B2 (en) * 2002-08-15 2004-04-06 Shi-Hwa Huang Image projector system having a light source that includes at least four light emitting diode modules

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DE 196 21 148 A1 1997.12.04
EP 0 354 468 A2 1990.02.14

Also Published As

Publication number Publication date
CN101219568A (zh) 2008-07-16
US7262437B2 (en) 2007-08-28
EP1320890A2 (de) 2003-06-25
US20070290383A1 (en) 2007-12-20
JP2004506321A (ja) 2004-02-26
TW538255B (en) 2003-06-21
DE10038213A1 (de) 2002-03-07
CN1447983A (zh) 2003-10-08
WO2002013231A2 (de) 2002-02-14
US20040026706A1 (en) 2004-02-12
WO2002013231A3 (de) 2002-06-20
JP2007112134A (ja) 2007-05-10

Similar Documents

Publication Publication Date Title
CN100517706C (zh) 辐射源和用于制造透镜模的方法
US10043957B2 (en) Surface-textured encapsulations for use with light emitting diodes
CN102575813B (zh) 照明装置和用于制造照明装置的冷却体和照明装置的方法
US8217409B2 (en) Surface-textured encapsulations for use with light emitting diodes
US6841424B2 (en) Semiconductor assembly encapsulation mold and method for forming same
CN109716600A (zh) 集成在硅控制底板上的竖直发射器
US8003036B2 (en) Mold for forming a molding member and method of fabricating a molding member using the same
US11302676B2 (en) Methods of making light-emitting assemblies comprising an array of light-emitting diodes having an optimized lens configuration
CN1663044A (zh) 灯和制灯方法
CN101278415A (zh) 发光二极管的制造方法
KR102176383B1 (ko) 하부 반사기를 가지는 led 렌즈의 캡슐화
US20140248724A1 (en) Method for manufacturing light emitting diode packages
CN101028876A (zh) 栈板结构
CN101527338A (zh) 透镜组件及其组合结构
CN211238291U (zh) 一种可调发光面的发光二极管
CN201204209Y (zh) Led引线基座
US9040321B2 (en) Method for manufacturing light emitting diode packages
CN220324411U (zh) 一种用于半导体封装模具的浮动机构
EP0225131A2 (en) Semiconductor light emitting device and method of forming same
KR101338567B1 (ko) 발광다이오드 패키지
US20230420917A1 (en) Compact, Surface-Mounted VCSEL Illuminators
CN2770097Y (zh) 固态半导体发光元件
CN202513208U (zh) Led引线框架片
TW521443B (en) Processing method of LED and the structure thereof
TWI234889B (en) Structural improvement of light-emitting diode and manufacturing process of the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090722

Termination date: 20190730

CF01 Termination of patent right due to non-payment of annual fee