CN100517076C - 曝光装置和曝光方法 - Google Patents

曝光装置和曝光方法 Download PDF

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Publication number
CN100517076C
CN100517076C CNB2006100655013A CN200610065501A CN100517076C CN 100517076 C CN100517076 C CN 100517076C CN B2006100655013 A CNB2006100655013 A CN B2006100655013A CN 200610065501 A CN200610065501 A CN 200610065501A CN 100517076 C CN100517076 C CN 100517076C
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CN
China
Prior art keywords
exposure
current mirror
marking
relative movement
exposure unit
Prior art date
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CNB2006100655013A
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English (en)
Chinese (zh)
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CN1834789A (zh
Inventor
谷川央树
常吉豪
田尾正则
伊藤徹
泉田信也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Engineering Co Ltd
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Toray Engineering Co Ltd
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Publication date
Application filed by Toray Engineering Co Ltd filed Critical Toray Engineering Co Ltd
Publication of CN1834789A publication Critical patent/CN1834789A/zh
Application granted granted Critical
Publication of CN100517076C publication Critical patent/CN100517076C/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Laser Beam Processing (AREA)
CNB2006100655013A 2005-03-18 2006-03-20 曝光装置和曝光方法 Active CN100517076C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005079425 2005-03-18
JP2005079425A JP4664102B2 (ja) 2005-03-18 2005-03-18 露光装置及び露光方法

Publications (2)

Publication Number Publication Date
CN1834789A CN1834789A (zh) 2006-09-20
CN100517076C true CN100517076C (zh) 2009-07-22

Family

ID=37002592

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100655013A Active CN100517076C (zh) 2005-03-18 2006-03-20 曝光装置和曝光方法

Country Status (4)

Country Link
JP (1) JP4664102B2 (enExample)
KR (1) KR100908548B1 (enExample)
CN (1) CN100517076C (enExample)
TW (1) TW200643648A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4491447B2 (ja) * 2005-11-04 2010-06-30 株式会社オーク製作所 レーザビーム・紫外線照射周辺露光装置およびその方法
JP4533874B2 (ja) * 2005-11-04 2010-09-01 株式会社オーク製作所 レーザビーム露光装置
JP4491444B2 (ja) * 2005-11-04 2010-06-30 株式会社オーク製作所 レーザビーム・紫外線照射周辺露光装置およびその方法
JP4491445B2 (ja) * 2005-11-04 2010-06-30 株式会社オーク製作所 周辺露光装置およびその方法
JP4491446B2 (ja) * 2005-11-04 2010-06-30 株式会社オーク製作所 周辺露光装置およびその方法
CN100593469C (zh) * 2007-02-12 2010-03-10 深圳市大族激光科技股份有限公司 模块化曝光系统
JP2011013512A (ja) * 2009-07-03 2011-01-20 Orc Manufacturing Co Ltd 周辺露光装置
TWI454687B (zh) * 2009-08-03 2014-10-01 Toray Eng Co Ltd Marking device and method
CN102514385B (zh) * 2011-11-29 2015-04-15 深圳市华星光电技术有限公司 标识码打印方法和打印设备
JP5896459B2 (ja) 2012-03-06 2016-03-30 東レエンジニアリング株式会社 マーキング装置及び方法
CN109116593B (zh) * 2018-08-02 2021-07-20 深圳市华星光电半导体显示技术有限公司 母板曝光方法
CN116699951B (zh) * 2023-06-16 2024-10-22 江西景旺精密电路有限公司 一种曝光平台及ldi曝光装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08150485A (ja) * 1994-11-28 1996-06-11 Komatsu Ltd レーザマーキング装置
JPH08224675A (ja) * 1995-02-22 1996-09-03 Toshiba Corp マーキングパターン形成装置
JP4356161B2 (ja) * 1999-12-20 2009-11-04 株式会社安川電機 描画装置
KR100322621B1 (ko) * 1999-12-31 2002-03-18 황인길 투사형 액정 디스플레이를 이용한 아이디 마킹장치
JP2001205462A (ja) * 2000-01-26 2001-07-31 Nec Corp レーザマーキング装置及びレーザマーキング方法
JP3321733B2 (ja) * 2000-09-20 2002-09-09 東レエンジニアリング株式会社 露光装置
JP3547418B2 (ja) * 2001-10-25 2004-07-28 三菱商事株式会社 レーザビームによる液晶パネルのマーキング方法及び装置
JP2003290939A (ja) * 2002-03-28 2003-10-14 Sunx Ltd レーザマーキング装置

Also Published As

Publication number Publication date
JP2006259515A (ja) 2006-09-28
TW200643648A (en) 2006-12-16
JP4664102B2 (ja) 2011-04-06
CN1834789A (zh) 2006-09-20
TWI350946B (enExample) 2011-10-21
KR100908548B1 (ko) 2009-07-20
KR20060101337A (ko) 2006-09-22

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