CN100501971C - 提高高压栅氧化层均匀性的工艺方法 - Google Patents
提高高压栅氧化层均匀性的工艺方法 Download PDFInfo
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- CN100501971C CN100501971C CNB2006100310910A CN200610031091A CN100501971C CN 100501971 C CN100501971 C CN 100501971C CN B2006100310910 A CNB2006100310910 A CN B2006100310910A CN 200610031091 A CN200610031091 A CN 200610031091A CN 100501971 C CN100501971 C CN 100501971C
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- high voltage
- shallow trench
- grid oxidation
- oxidation layer
- silicon nitride
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CNB2006100310910A CN100501971C (zh) | 2006-09-13 | 2006-09-13 | 提高高压栅氧化层均匀性的工艺方法 |
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CNB2006100310910A CN100501971C (zh) | 2006-09-13 | 2006-09-13 | 提高高压栅氧化层均匀性的工艺方法 |
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CN101145543A CN101145543A (zh) | 2008-03-19 |
CN100501971C true CN100501971C (zh) | 2009-06-17 |
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CN104103503B (zh) * | 2013-04-02 | 2017-12-12 | 无锡华润上华科技有限公司 | 半导体器件栅氧化层的形成方法 |
CN104465532B (zh) * | 2013-09-24 | 2017-06-16 | 旺宏电子股份有限公司 | 浅沟道隔离结构及其制造方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140115 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140115 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |