CN100501876C - 存储器及用于在存储器中软故障检测的方法 - Google Patents

存储器及用于在存储器中软故障检测的方法 Download PDF

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Publication number
CN100501876C
CN100501876C CNB038140888A CN03814088A CN100501876C CN 100501876 C CN100501876 C CN 100501876C CN B038140888 A CNB038140888 A CN B038140888A CN 03814088 A CN03814088 A CN 03814088A CN 100501876 C CN100501876 C CN 100501876C
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China
Prior art keywords
memory
line
bit
word line
predetermined
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Expired - Fee Related
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CNB038140888A
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English (en)
Chinese (zh)
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CN1662997A (zh
Inventor
托马斯·W·利斯顿
劳伦斯·N·赫尔
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN1662997A publication Critical patent/CN1662997A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/1202—Word line control
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/1204—Bit line control

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  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
CNB038140888A 2002-06-17 2003-05-07 存储器及用于在存储器中软故障检测的方法 Expired - Fee Related CN100501876C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/173,229 2002-06-17
US10/173,229 US6590818B1 (en) 2002-06-17 2002-06-17 Method and apparatus for soft defect detection in a memory

Publications (2)

Publication Number Publication Date
CN1662997A CN1662997A (zh) 2005-08-31
CN100501876C true CN100501876C (zh) 2009-06-17

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CNB038140888A Expired - Fee Related CN100501876C (zh) 2002-06-17 2003-05-07 存储器及用于在存储器中软故障检测的方法

Country Status (7)

Country Link
US (1) US6590818B1 (enExample)
JP (1) JP2005530299A (enExample)
KR (1) KR20050008829A (enExample)
CN (1) CN100501876C (enExample)
AU (1) AU2003234496A1 (enExample)
TW (1) TWI301272B (enExample)
WO (1) WO2003107355A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11594275B2 (en) 2021-07-12 2023-02-28 Changxin Memory Technologies, Inc. Method for detecting leakage position in memory and device for detecting leakage position in memory

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DE19951048C2 (de) * 1999-10-22 2002-11-21 Infineon Technologies Ag Verfahren zur Identifizierung einer integrierten Schaltung
US6834017B2 (en) * 2002-10-03 2004-12-21 Hewlett-Packard Development Company, L.P. Error detection system for an information storage device
KR100585090B1 (ko) * 2003-06-04 2006-05-30 삼성전자주식회사 스태틱 메모리셀 소프트 결함 검출수단을 구비하는 반도체집적회로 및 이의 소프트 결함 검출방법
EP2057636A2 (en) 2006-08-22 2009-05-13 Nxp B.V. Method for testing a static random access memory
US7872930B2 (en) * 2008-05-15 2011-01-18 Qualcomm, Incorporated Testing a memory device having field effect transistors subject to threshold voltage shifts caused by bias temperature instability
US8797813B2 (en) 2011-05-17 2014-08-05 Maxlinear, Inc. Method and apparatus for memory power and/or area reduction
KR101300590B1 (ko) * 2011-10-18 2013-08-27 넷솔 주식회사 메모리 장치 및 이의 테스트 방법
US9236144B2 (en) * 2014-03-12 2016-01-12 Intel IP Corporation For-test apparatuses and techniques
KR20170029914A (ko) * 2015-09-08 2017-03-16 에스케이하이닉스 주식회사 메모리 장치 및 이의 동작 방법
US10891992B1 (en) 2017-02-16 2021-01-12 Synopsys, Inc. Bit-line repeater insertion architecture
US10867665B1 (en) * 2017-02-16 2020-12-15 Synopsys, Inc. Reset before write architecture and method
US10431265B2 (en) * 2017-03-23 2019-10-01 Silicon Storage Technology, Inc. Address fault detection in a flash memory system
CN111161785A (zh) * 2019-12-31 2020-05-15 展讯通信（上海）有限公司 静态随机存储器及其故障检测电路
DE102021106756A1 (de) * 2020-05-29 2021-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zum testen einer speicherschaltung und speicherschaltung
CN112349341B (zh) * 2020-11-09 2024-05-28 深圳佰维存储科技股份有限公司 Lpddr测试方法、装置、可读存储介质及电子设备
CN114187956B (zh) * 2022-01-14 2023-09-05 长鑫存储技术有限公司 存储器预充电时长边界的测试方法、装置、设备及存储介质
CN114582411B (zh) * 2022-03-01 2024-12-06 长鑫存储技术有限公司 存储器检测方法、电路、装置、设备及存储介质

Citations (2)

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Publication number Priority date Publication date Assignee Title
US5255230A (en) * 1991-12-31 1993-10-19 Intel Corporation Method and apparatus for testing the continuity of static random access memory cells
CN1327595A (zh) * 1999-07-22 2001-12-19 皇家菲利浦电子有限公司 用于测试一个存储器阵列的方法和带有一个故障响应信号通知模式的可测试的基于存储器的设备,用于当在故障模式中发现预定的对应关系时仅以一个无损耗压缩响应的形式用信号通知这样一个故障模式

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US4719418A (en) 1985-02-19 1988-01-12 International Business Machines Corporation Defect leakage screen system
US5034923A (en) 1987-09-10 1991-07-23 Motorola, Inc. Static RAM with soft defect detection
US5428574A (en) 1988-12-05 1995-06-27 Motorola, Inc. Static RAM with test features
CA2212089C (en) * 1997-07-31 2006-10-24 Mosaid Technologies Incorporated Bist memory test system
US6163862A (en) * 1997-12-01 2000-12-19 International Business Machines Corporation On-chip test circuit for evaluating an on-chip signal using an external test signal
JP2000322900A (ja) 1999-05-12 2000-11-24 Mitsubishi Electric Corp 半導体記録装置
US6108257A (en) * 1999-09-30 2000-08-22 Philips Electronics North America Corporation Zero power SRAM precharge
WO2001086660A1 (en) * 2000-05-09 2001-11-15 Koninklijke Philips Electronics N.V. Integrated circuit containing sram memory and method of testing same
CA2345845C (en) * 2001-04-30 2012-03-27 Mosaid Technologies Incorporated Bitline precharge

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5255230A (en) * 1991-12-31 1993-10-19 Intel Corporation Method and apparatus for testing the continuity of static random access memory cells
CN1327595A (zh) * 1999-07-22 2001-12-19 皇家菲利浦电子有限公司 用于测试一个存储器阵列的方法和带有一个故障响应信号通知模式的可测试的基于存储器的设备,用于当在故障模式中发现预定的对应关系时仅以一个无损耗压缩响应的形式用信号通知这样一个故障模式

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11594275B2 (en) 2021-07-12 2023-02-28 Changxin Memory Technologies, Inc. Method for detecting leakage position in memory and device for detecting leakage position in memory

Also Published As

Publication number Publication date
TW200405351A (en) 2004-04-01
KR20050008829A (ko) 2005-01-21
WO2003107355A1 (en) 2003-12-24
TWI301272B (en) 2008-09-21
AU2003234496A1 (en) 2003-12-31
CN1662997A (zh) 2005-08-31
US6590818B1 (en) 2003-07-08
JP2005530299A (ja) 2005-10-06

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