CN100474615C - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN100474615C
CN100474615C CNB2006100024618A CN200610002461A CN100474615C CN 100474615 C CN100474615 C CN 100474615C CN B2006100024618 A CNB2006100024618 A CN B2006100024618A CN 200610002461 A CN200610002461 A CN 200610002461A CN 100474615 C CN100474615 C CN 100474615C
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CN
China
Prior art keywords
layer
base layer
ingaas
content
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2006100024618A
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English (en)
Chinese (zh)
Other versions
CN1819262A (zh
Inventor
泽田宪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN1819262A publication Critical patent/CN1819262A/zh
Application granted granted Critical
Publication of CN100474615C publication Critical patent/CN100474615C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/136—Emitter regions of BJTs of heterojunction BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs

Landscapes

  • Bipolar Transistors (AREA)
CNB2006100024618A 2005-01-26 2006-01-26 半导体器件 Expired - Fee Related CN100474615C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005017624 2005-01-26
JP2005017624A JP2006210452A (ja) 2005-01-26 2005-01-26 半導体装置

Publications (2)

Publication Number Publication Date
CN1819262A CN1819262A (zh) 2006-08-16
CN100474615C true CN100474615C (zh) 2009-04-01

Family

ID=36695846

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100024618A Expired - Fee Related CN100474615C (zh) 2005-01-26 2006-01-26 半导体器件

Country Status (3)

Country Link
US (1) US7482643B2 (enExample)
JP (1) JP2006210452A (enExample)
CN (1) CN100474615C (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2007058265A1 (ja) * 2005-11-18 2009-05-07 独立行政法人科学技術振興機構 バイポーラトランジスタ及びその製造方法
JP2007335586A (ja) * 2006-06-14 2007-12-27 Sony Corp 半導体集積回路装置および半導体集積回路装置の製造方法
US20090045437A1 (en) * 2007-08-15 2009-02-19 Northrop Grumman Space & Mission Systems Corp. Method and apparatus for forming a semi-insulating transition interface
US9070732B2 (en) * 2012-04-27 2015-06-30 Skyworks Solutions, Inc. Bipolar transistor having collector with doping spike
CN103456777A (zh) * 2012-06-01 2013-12-18 稳懋半导体股份有限公司 具高电流增益的异质接面双极晶体管结构及其加工方法
US9231088B2 (en) * 2014-01-16 2016-01-05 Triquint Semiconductor, Inc. Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor
US10256329B2 (en) * 2015-09-04 2019-04-09 Win Semiconductors Corp. Heterojunction bipolar transistor
CN106653826B (zh) * 2016-12-26 2019-01-08 厦门市三安集成电路有限公司 一种化合物半导体异质接面双极晶体管
JP2018137259A (ja) * 2017-02-20 2018-08-30 株式会社村田製作所 ヘテロ接合バイポーラトランジスタ
US10134881B1 (en) * 2017-05-18 2018-11-20 Qualcomm Incorporated Quantum well thermal sensing for power amplifier
JP6990073B2 (ja) * 2017-09-12 2022-02-03 アンリツ株式会社 ヘテロ接合バイポーラトランジスタおよびその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5631477A (en) * 1995-06-02 1997-05-20 Trw Inc. Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor
CN1296291A (zh) * 1999-10-07 2001-05-23 稳懋半导体股份有限公司 变形异质接面双极性晶体管
CN1433082A (zh) * 2002-01-18 2003-07-30 Nec化合物半导体器件株式会社 异质结双极型晶体管和利用它构成的半导体集成电路器件
US6768141B2 (en) * 2002-08-23 2004-07-27 Agilent Technologies, Inc. Heterojunction bipolar transistor (HBT) having improved emitter-base grading structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04251934A (ja) 1991-01-09 1992-09-08 Fujitsu Ltd 半導体装置
JPH05304165A (ja) * 1992-04-27 1993-11-16 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合トランジスタ
US6847060B2 (en) * 2000-11-27 2005-01-25 Kopin Corporation Bipolar transistor with graded base layer
US7126052B2 (en) * 2002-10-02 2006-10-24 The Boeing Company Isoelectronic surfactant induced sublattice disordering in optoelectronic devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5631477A (en) * 1995-06-02 1997-05-20 Trw Inc. Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor
CN1296291A (zh) * 1999-10-07 2001-05-23 稳懋半导体股份有限公司 变形异质接面双极性晶体管
CN1433082A (zh) * 2002-01-18 2003-07-30 Nec化合物半导体器件株式会社 异质结双极型晶体管和利用它构成的半导体集成电路器件
US6768141B2 (en) * 2002-08-23 2004-07-27 Agilent Technologies, Inc. Heterojunction bipolar transistor (HBT) having improved emitter-base grading structure

Also Published As

Publication number Publication date
JP2006210452A (ja) 2006-08-10
US20060163610A1 (en) 2006-07-27
CN1819262A (zh) 2006-08-16
US7482643B2 (en) 2009-01-27

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