CN100462319C - 化学抛光方法、经该方法抛光的玻璃基板及化学抛光装置 - Google Patents

化学抛光方法、经该方法抛光的玻璃基板及化学抛光装置 Download PDF

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Publication number
CN100462319C
CN100462319C CNB2005100833270A CN200510083327A CN100462319C CN 100462319 C CN100462319 C CN 100462319C CN B2005100833270 A CNB2005100833270 A CN B2005100833270A CN 200510083327 A CN200510083327 A CN 200510083327A CN 100462319 C CN100462319 C CN 100462319C
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China
Prior art keywords
liquid crystal
brightening solution
glass base
crystal glass
polishing
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2005100833270A
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English (en)
Chinese (zh)
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CN1724432A (zh
Inventor
西山智弘
出口干郎
丝川胜博
小谷诚
沟口幸一
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SAISAN STAINLESS CHEMICAL CO Ltd
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SAISAN STAINLESS CHEMICAL CO Ltd
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Publication of CN1724432A publication Critical patent/CN1724432A/zh
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1313—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells specially adapted for a particular application
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W30/00—Technologies for solid waste management
    • Y02W30/50—Reuse, recycling or recovery technologies
    • Y02W30/52—Mechanical processing of waste for the recovery of materials, e.g. crushing, shredding, separation or disassembly
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W30/00—Technologies for solid waste management
    • Y02W30/50—Reuse, recycling or recovery technologies
    • Y02W30/60—Glass recycling

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Surface Treatment Of Glass (AREA)
  • Liquid Crystal (AREA)
CNB2005100833270A 2001-04-12 2002-04-11 化学抛光方法、经该方法抛光的玻璃基板及化学抛光装置 Expired - Fee Related CN100462319C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001114498 2001-04-12
JP114498/2001 2001-04-12

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB021059632A Division CN1277142C (zh) 2001-04-12 2002-04-11 液晶玻璃基板的化学抛光方法及化学抛光装置

Publications (2)

Publication Number Publication Date
CN1724432A CN1724432A (zh) 2006-01-25
CN100462319C true CN100462319C (zh) 2009-02-18

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Family Applications (2)

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CNB021059632A Expired - Fee Related CN1277142C (zh) 2001-04-12 2002-04-11 液晶玻璃基板的化学抛光方法及化学抛光装置
CNB2005100833270A Expired - Fee Related CN100462319C (zh) 2001-04-12 2002-04-11 化学抛光方法、经该方法抛光的玻璃基板及化学抛光装置

Family Applications Before (1)

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CNB021059632A Expired - Fee Related CN1277142C (zh) 2001-04-12 2002-04-11 液晶玻璃基板的化学抛光方法及化学抛光装置

Country Status (4)

Country Link
KR (1) KR100380844B1 (ko)
CN (2) CN1277142C (ko)
SG (1) SG94843A1 (ko)
TW (1) TWI263079B (ko)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG121817A1 (en) * 2002-11-22 2006-05-26 Nishiyama Stainless Chemical Co Ltd Glass substrate for flat planel display, and process for producing the same
CN100343420C (zh) * 2004-07-21 2007-10-17 常耀辉 一种不锈钢表面快速化学研磨抛光浴液及方法
JP2007197236A (ja) * 2006-01-25 2007-08-09 Nishiyama Stainless Chem Kk ディスプレイ用ガラス基板の製造方法及びそのガラス基板
CN101089688B (zh) * 2006-06-14 2010-09-29 比亚迪股份有限公司 一种超薄液晶盒的制作方法
CN100392477C (zh) * 2006-07-07 2008-06-04 南京大学 液晶显示面板资源化处理方法
KR101233687B1 (ko) * 2010-10-28 2013-02-15 삼성디스플레이 주식회사 유리 기판 식각 장치
JP5829458B2 (ja) * 2011-08-25 2015-12-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN103033403B (zh) * 2011-09-29 2015-09-02 鞍钢股份有限公司 一种薄板金属薄膜试样的制备方法
CN102643028A (zh) * 2012-05-14 2012-08-22 深圳市拓捷科技发展有限公司 一种玻璃薄化设备及方法
CN102701598B (zh) * 2012-06-26 2015-09-30 广东拓捷科技有限公司 一种改进的玻璃薄化设备
CN102701597B (zh) * 2012-06-26 2014-10-08 汕头市拓捷科技有限公司 一种快速的玻璃薄化设备
CN103046053B (zh) * 2012-09-21 2015-04-01 中国兵器工业第二一三研究所 高温氧化不锈钢的化学抛光方法
CN103508676A (zh) * 2013-07-24 2014-01-15 芜湖长信科技股份有限公司 一种避免液晶基板玻璃减薄工艺缺陷的方法及其酸液配置方法
TW201519308A (zh) * 2013-11-13 2015-05-16 Grand Plastic Technology Corp 循環式均勻蝕刻裝置
CN105541120A (zh) * 2015-12-28 2016-05-04 常熟市金亿复合材料有限公司 一种中空玻璃板的镀膜工艺
JP6323695B2 (ja) * 2016-09-30 2018-05-16 パナソニックＩｐマネジメント株式会社 ガラス用研磨液および研磨方法
CN107286853A (zh) * 2017-07-12 2017-10-24 天津津航技术物理研究所 一种微晶玻璃高光亮度化学抛光液及制备方法
CN107235641A (zh) * 2017-08-14 2017-10-10 湖北工程学院 一种玻璃减薄蚀刻液及其制备方法
CN107814491A (zh) * 2017-12-14 2018-03-20 天津美泰真空技术有限公司 一种平板玻璃基板蚀刻液
CN107902914A (zh) * 2017-12-14 2018-04-13 天津美泰真空技术有限公司 一种玻璃基板薄化工艺蚀刻液
CN109439329A (zh) * 2018-10-29 2019-03-08 苏州博洋化学股份有限公司 平板显示阵列制程用新型igzo蚀刻液
CN109111859A (zh) * 2018-10-30 2019-01-01 秦皇岛市大龙建材有限公司 玻璃抛光液
CN111029230B (zh) * 2019-12-13 2022-04-05 山西长城微光器材股份有限公司 微通道板通道内抛光方法
CN111925126A (zh) * 2020-08-12 2020-11-13 郑州恒昊光学科技有限公司 一种光学玻璃轻微划痕修复膏
CN116042098A (zh) * 2023-02-08 2023-05-02 广东粤港澳大湾区黄埔材料研究院 一种纳米氧化铝抛光液及在红外硫系玻璃抛光中的应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0641770A (ja) * 1992-07-27 1994-02-15 Daikin Ind Ltd シリコンウエハ表面の処理方法
CN1088002A (zh) * 1992-11-16 1994-06-15 东京电子株式会社 制造液晶显示器基板及评价半导体晶体的方法与装置
JPH10109012A (ja) * 1996-10-04 1998-04-28 Stec Kk 生ゴミ処理の脱臭方法および脱臭装置
JPH11111658A (ja) * 1997-10-06 1999-04-23 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US6174371B1 (en) * 1997-10-06 2001-01-16 Dainippon Screen Mfg. Co., Ltd. Substrate treating method and apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5854974A (ja) * 1981-09-28 1983-04-01 三菱電機株式会社 ゴルフ練習器
JP3531961B2 (ja) * 1994-02-01 2004-05-31 横浜ゴム株式会社 スチールコードベルトのエンドレス加工方法及びそのエンドレス加工方法を実施するための冷却冷凍装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0641770A (ja) * 1992-07-27 1994-02-15 Daikin Ind Ltd シリコンウエハ表面の処理方法
CN1088002A (zh) * 1992-11-16 1994-06-15 东京电子株式会社 制造液晶显示器基板及评价半导体晶体的方法与装置
JPH10109012A (ja) * 1996-10-04 1998-04-28 Stec Kk 生ゴミ処理の脱臭方法および脱臭装置
JPH11111658A (ja) * 1997-10-06 1999-04-23 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US6174371B1 (en) * 1997-10-06 2001-01-16 Dainippon Screen Mfg. Co., Ltd. Substrate treating method and apparatus

Also Published As

Publication number Publication date
CN1724432A (zh) 2006-01-25
CN1380572A (zh) 2002-11-20
CN1277142C (zh) 2006-09-27
KR100380844B1 (ko) 2003-04-18
KR20020080215A (ko) 2002-10-23
TWI263079B (en) 2006-10-01
SG94843A1 (en) 2003-03-18

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