CN100462319C - Chemical polishing method and glass base plate with the method and chemical polishing device - Google Patents
Chemical polishing method and glass base plate with the method and chemical polishing device Download PDFInfo
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- CN100462319C CN100462319C CNB2005100833270A CN200510083327A CN100462319C CN 100462319 C CN100462319 C CN 100462319C CN B2005100833270 A CNB2005100833270 A CN B2005100833270A CN 200510083327 A CN200510083327 A CN 200510083327A CN 100462319 C CN100462319 C CN 100462319C
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- liquid crystal
- brightening solution
- glass base
- crystal glass
- polishing
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1313—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells specially adapted for a particular application
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
- Y02W30/52—Mechanical processing of waste for the recovery of materials, e.g. crushing, shredding, separation or disassembly
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
- Y02W30/60—Glass recycling
Abstract
The invention provides a chemical polishing method and a chemical polishing device, capable of recycling liquid crystal glass baseplates and used to chemically polish liquid crystal glass. The chemical polishing agents include one or more than one of the mixture of hydrofluoric acid and the salts (in which the salt of the hydrofluoric acid is one or more than one of ammonium fluoride, potassium fluoride and sodium fluoride), one or more than one of the organic acids of hydrochloric acid, sulphuric acid, phosphoric acid and nitric acid, etc, and the sulfonate anionic surfactants and surfactant Amine surfactants.
Description
Technical field
The invention relates to the chemically polishing method of liquid crystal glass base and implement in the chemical rightenning device that uses.This method can be carried out chemical rightenning to the outside surface of liquid crystal glass base or the outside surface of the liquid crystal glass base after a pair of applying.
Background technology
The finishing method of liquid crystal glass base in the past has mechanical polishing method and chemical polishing.Recently, the quality improving for liquid crystal glass base has proposed following requirement:
(1) for the elimination that originally is present in the surface scratch on the liquid crystal glass base;
(2) after the film of patterning is peeled off, the elimination of the pattern vestige of on substrate, retaining;
(3) when the thickness of slab with liquid crystal glass base carries out attenuate, the raising of this plate surface;
(4) for the elimination of the outside surface cut that originally is present in the liquid crystal glass base after a pair of applying;
(5) when the thickness of slab with the outside surface of the liquid crystal glass base after a pair of applying carries out attenuate, the raising of this plate surface;
Require for above-mentioned these quality improvings, adopt mechanical polishing method in the past, exist deficiency, the glass substrate of substrate surface flatness that the unavoidable problem such as restriction that fragmentation and substrate surface easily produce residual, the polishing ability of cut, polishing apperance easily take place.Particularly for nearest large substrate, these problems seem more serious.
On the other hand, chemical polishing in the past, originally very difficult elimination is present in surface scratch and the pattern vestige on the liquid crystal glass base, variety of problems below when substrate thickness is carried out attenuate, also easily taking place in the example, the level of quality when being difficult to guarantee to reach glazed surface and not having the new glass of cut and pattern vestige.
For example, in No. 2722798 communique of special permission, a kind of method of the surface of liquid crystal glass base being carried out etching is disclosed: have on a pair of glass substrate of a plurality of liquid crystal display areas, the liquid crystal inclosure field of each display unit is separated and bonding the aggregate of composition display unit with sealing material.It is in the etching liquid of basal component that this aggregate is impregnated into hydrofluoric acid, and the outside surface of liquid crystal glass base is carried out etching.Though this method can make the thickness of slab attenuate of glass substrate, have the problem that produces the aftermentioned defective.
And for example, open in the 2000-147474 communique the spy, disclose a kind of surface and carried out the automatic etching device of etching: in the bottom of the storage tank of the etching liquid that contains hydrofluoric acid liquid crystal glass base, bubble generator is housed, the bubble that is produced by this bubble generator stirs above-mentioned etching liquid, makes the surface of the glass substrate in etching liquid groove be subjected to etching.But, under the situation of the outside surface of liquid crystal glass base being polished, have the problem that produces the aftermentioned defective with 15～17% hydrofluoric acid.
In this invention, want to utilize the rising bubble of nitrogen that polishing fluid is stirred, to realize uniform polish to glass surface.But in fact there are the following problems: bubble that has risen and polishing fluid descend after arriving fluid surface, and the mobile impairment rising mobile homogeneity of this decline makes the surperficial inaccessible homogeneous of polishing.
When carrying out the polishing of 50～300 μ m thickness, there is following problem with the chemically polishing method in the past shown in two above-mentioned examples:
(1) even under luminescent lamp, also can confirm to produce gonorrhoea;
(2) indenture that diameter is 0.2mm to the maximum takes place.Illustrated among Figure 14 by the surface condition after the polishing of surface roughness meter mensuration;
(3) diameter of indenture increases along with the increase of polished amount.The diameter of indenture and the relation of polished amount have been shown among Figure 15;
(4) lip-deep indenture is the most nearly 50/square centimeter.Figure 16 is the indenture number of unit surface and the graph of a relation of polished amount; As can be seen from Figure 16, the indenture number of unit surface increases with the increase of polished amount;
(5) under luminescent lamp, can observe the generation external waviness.The situation of the external waviness of surface of polished has been shown among Figure 17;
(6) thickness of slab is inhomogeneous, and the difference between its maximum value and minimum value is between 20～100 μ m;
(7) before polishing, on glass surface, make cut artificially, this cut width after polishing increases, the degree of depth is deepened (referring to Figure 18 and Figure 19).Figure 18 be before polishing deliberately behind surface scratch, the sectional drawing that this is surperficial.Figure 19 is the surperficial sectional drawing after the polishing.
For another example: sputter is being carried out with chromium (Cr) earlier in the liquid crystal glass base surface, after the picture element of using with chromatic filter carries out graphically then, when this substrate becomes bad, usually carry out mechanical polishing after the chromium film after graphical being peeled off, the figure vestige can be eliminated, and the glass substrate after this polishing can be used as the new glass substrate again.But when the chemical polishing replacement mechanical polishing of using in the past, the figure vestige is not eliminated, and can not use as the new glass substrate again.
The present invention is in view of the problem of above existence, and purpose is to provide a kind of chemically polishing method that can obtain the liquid crystal glass base of the high liquid crystal glass base of surface.This method adopts the chemical brightening solution of the mixture, mineral acid, organic acid, anion surfactant and the amphoterics that contain hydrofluoric acid and fluorochemical, liquid crystal glass base is flooded, the outside surface of liquid crystal glass base is polished with 0.5～10 μ m/ minute speed, and resultant of reaction such as silicofluoride are not adhered on the surface of liquid crystal glass base again, can access the high liquid crystal glass base of surface.
In addition, the present invention also aims to provide when can obtain the high liquid crystal glass base of uniform surface flatness, can also eliminate surface scratch, can realize the chemically polishing method and the chemical rightenning device of the liquid crystal glass base that utilizes again of glass.The liquid that rises by the bubble formation that produces from chemical brightening solution storage tank bottom flows, this liquid stream overflows from edge last week of chemical brightening solution storage tank, after the filter filtration, offer the chemical brightening solution storage tank once more, make that like this total surface of liquid crystal glass base is to maintain fresh polishing fluid to supply with, the physics adventitious deposit again of resultant prevents to respond on the liquid crystal glass base surface, thereby the thickness that makes liquid crystal glass base is attenuate, substrate surface equably planarization the time gradually, the cut on surface is eliminated, and obtains the glass substrate that can utilize again.
Have again, the present invention also aims to provide a kind of chemical rightenning device.This device is furnished with the utensil of placing liquid crystal glass base, and this utensil can be placed one or polylith liquid crystal glass base, and this liquid crystal glass base can be a monolithic, also can be after a pair of liquid crystal glass base is fitted.Utilize this device to polish uniformly simultaneously to the liquid crystal glass base of multi-disc or the liquid crystal glass base after a pair of applying.
Also have, the present invention also aims to provide a kind of chemical rightenning device.This device is furnished with ultrasonic vibrator or shakes agitator.Utilize this device to carry out more uniform stirring to chemical brightening solution.
The chemically polishing method of the liquid crystal glass base in the 1st invention is characterized in that, liquid crystal glass base is flooded in chemical brightening solution, and the outside surface of liquid crystal glass base is polished with 0.5～10 μ m/ minute speed.This chemical brightening solution contains the mixed solution (fluorochemical wherein comprises one or more in Neutral ammonium fluoride, Potassium monofluoride and the Sodium Fluoride) of hydrofluoric acid and fluorochemical, one or more the mineral acid that contains hydrochloric acid, sulfuric acid, phosphoric acid and nitric acid, one or more the organic acid that contains acetic acid and succsinic acid contains the anion surfactant and the amine amphoterics of sulfonate surfactant.
The mixed solution of hydrofluoric acid and fluorochemical (fluorochemical wherein comprise in Neutral ammonium fluoride, Potassium monofluoride and the Sodium Fluoride any or multiple), one or more the mineral acid that contains hydrochloric acid, sulfuric acid, phosphoric acid and nitric acid, contain one or more organic acid of acetic acid and succsinic acid, can carry out chemical rightenning to liquid crystal glass base, and can make not adventitious deposit again of resultant of reaction such as silicofluoride on the surface of liquid crystal glass base.
Contain the anion surfactant of sulfonate surfactant and amine amphoterics etc. and also be in order to make resultant of reaction such as silicofluoride not adventitious deposit and the auxiliary agent that adds again on the surface of liquid crystal glass base.
Therefore, use these compositions can make the high liquid crystal glass base of surface.
When polishing velocity was too fast, the surface of liquid crystal glass base was easy to generate external waviness and indenture.Therefore, polishing velocity is with about 0.5～10 μ m/ minute, particularly with 1～5 μ m/ minute for well.
Adopt above-mentioned chemical brightening solution, and guarantee the surface of liquid crystal glass base to be polished, can when making the thickness of slab attenuate of liquid crystal glass base, improve the surface of glass substrate with above-mentioned polishing velocity.
The chemically polishing method of the liquid crystal glass base in the 2nd invention is characterized in that, in the 1st invention, by producing bubble in the storage tank bottom that stores above-mentioned chemical brightening solution, produces rising liquid stream.
The chemically polishing method of liquid crystal glass base in the 3rd invention is characterized in that, in the 2nd invention, the rising liquid stream that makes aforementioned generation overflows from the upper edge of the storage tank that stores above-mentioned chemical brightening solution.
The chemically polishing method of the liquid crystal glass base in the 4th invention is characterized in that, in the 3rd invention, makes the above-mentioned chemical brightening solution that overflows from the upper edge of storage tank supply with above-mentioned chemical brightening solution storage tank more again.
The chemically polishing method of the liquid crystal glass base in the 5th invention, it is characterized in that, in the 4th invention, the above-mentioned chemical brightening solution that overflows from the upper edge of the storage tank strainer of flowing through is filtered, after the resultant of reaction that produces in the polishing process is removed, resupply above-mentioned chemical brightening solution storage tank.
In the 2nd to the 5th invention, because chemical brightening solution is evenly risen, can provide fresh polishing fluid at the total surface of liquid crystal glass base, can prevent that simultaneously resultant of reaction is at liquid crystal glass base Surface Physical adventitious deposit again.
Polishing velocity is by velocity of diffusion and speed of response decision, but the convex part on liquid crystal glass base surface owing to be subjected to the moving influence of bubble upwelling, always can obtain active chemical brightening solution, played a leading role by the speed of response law, it is very fast that polishing velocity becomes.In contrast, the recessed part on liquid crystal glass base surface, not smooth because of flowing of polishing fluid, play a leading role by diffusion law, polishing velocity is slack-off.Therefore, can flow with the rising of bubble and control polishing velocity, thereby can when making the liquid crystal glass base reduced thickness, the flatness on surface be improved.
In addition, can eliminate the cut that originally is present in the liquid crystal glass base surface, make the utilization again of glass become possibility.
The 3rd invention has been eliminated the chemical brightening solution that rises and has been descended behind the surface that arrives the chemical brightening solution storage tank, thereby stops the drawback of the even rising of back chemical brightening solution, and the liquid crystal glass base surface is polished more equably.
The 4th invention can make chemical brightening solution recycle smoothly.
The 5th invention has stoped the adventitious deposit of the resultant of reaction in the chemical brightening solution on the liquid crystal glass base surface.
The chemical rightenning device of the 6th invention comprises the chemical brightening solution storage tank and the following apparatus that store chemical brightening solution: the bubble generator that imports gas and gas is spued and partly spues from bubble, described bubble spue and partly are made of porous materials; Be installed in the spillage receiver of above-mentioned storage chemical brightening solution storage tank circumference, this groove is used to accept the chemical brightening solution that overflows from this storage tank; Be used to remove the strainer that polishes the reaction production thing that produces; Chemical brightening solution after the above-mentioned strainer filtration is transported to pump used in the chemical brightening solution storage tank once more; Be installed in the chemical brightening solution blowoff of above-mentioned bubble generator downside, this device has a plurality of holes, is used for above-mentioned chemical brightening solution with pump output is sprayed to the bottom of chemical brightening solution storage tank.
Utilize the chemical rightenning device of the 6th invention, chemical brightening solution is evenly risen, overflow, after resultant of reaction removed, flow to the polishing fluid storage tanks once more, polishing fluid is recycled, and the total surface of liquid crystal glass base is to have fresh polishing fluid to supply with, and can prevent that resultant of reaction from carrying out physics adventitious deposit again on the liquid crystal glass base surface simultaneously.
The convex part on liquid crystal glass base surface owing to be subjected to the moving influence of bubble upwelling, always can obtain the activity chemistry polishing fluid, is played a leading role by the speed of response law, and it is very fast that its polishing velocity becomes.In contrast, the recessed part on liquid crystal glass base surface, not smooth because of flowing of polishing fluid, play a leading role by diffusion law, polishing velocity is slack-off, thereby can when making the liquid crystal glass base reduced thickness flatness on surface be improved.
The chemical rightenning device of the 7th invention, it is characterized in that in the 6th invention, being furnished with the utensil of placing liquid crystal glass base, this utensil can be placed one or polylith liquid crystal glass base, and this liquid crystal glass base can be monolithic also can be after a pair of liquid crystal glass base is fitted.
Utilize the device of the 7th invention to polish uniformly simultaneously to the liquid crystal glass base of multi-disc or the glass substrate after a pair of applying.
The chemical rightenning device of the 8th invention is characterized in that, in the chemical rightenning device described in the 6th or the 7th invention, is equipped with ultrasonic vibrator or shakes agitator.
Utilize the chemical rightenning device of the 8th invention to carry out more uniform stirring to chemical brightening solution.
Description of drawings
[Fig. 1]
The cross sectional representation of chemical rightenning device of the present invention.
[Fig. 2]
The stereographic map of bubble generator of the present invention.
[Fig. 3]
The stereographic map of the bubble generator of other kind of the present invention.
[Fig. 4]
Chemical brightening solution storage tank of the present invention and liquid crystal glass base are placed the floor map of utensil with the fixed retainer tool.
[Fig. 5]
The stereographic map of chemical brightening solution blowoff of the present invention.
[Fig. 6]
The interpolation ratio figure of polishing velocity and 10 kinds of compositions of chemical brightening solution.
[Fig. 7]
The graph of a relation of polishing velocity and temperature.
[Fig. 8]
(2) the measurement of plate thickness position plane synoptic diagram of glass substrate.
[Fig. 9]
Chemical rightenning front and rear surfaces cut has or not condition survey result's floor map.
[Figure 10]
(2) the glass substrate sample surfaces state fixed result schematic diagram of surface roughness instrumentation.
[Figure 11]
Cut has or not condition survey result's floor map before and after the chemical rightenning.
[Figure 12]
The floor map of the sample outer surface measurement of plate thickness position after two (2) glass substrates are fitted.
[Figure 13]
The floor map of the measurement of plate thickness position, the inside, the sample outside after two (2) glass substrates are fitted.
[Figure 14]
Measurement result synoptic diagram with the sample surfaces after traditional finishing method polishing.
[Figure 15]
Indenture diameter and polished amount concern synoptic diagram.
[Figure 16]
The indenture number of unit surface and polished amount concern synoptic diagram.
[Figure 17]
The external waviness situation synoptic diagram of polishing back sample.
[Figure 18]
The cross sectional representation of intentional cut glass baseplate surface before the polishing.
[Figure 19]
The cross sectional representation of polishing back sample surfaces.
[nomenclature]
1 chemical rightenning device, 13 spillage receivers
11 chemical brightening solution storage tanks, 14 strainers
12 bubble generators, 15 pumps
12a bubble ejection portion 16 chemical brightening solution blowoffs
17 liquid crystal glass bases are placed the fixed retainer tool 18 liquid crystal glass bases placement utensil that utensil is used
Below, with reference to accompanying drawing embodiment of the present invention are specifically described.
Fig. 1 is the sectional view of the chemical rightenning device of explanation embodiment of the present invention.Wherein, the 1st, the chemical rightenning device.
In the chemical rightenning device 1, be provided with chemical brightening solution storage tank 11; In the bottom of chemical brightening solution storage tank 11, have to import the bubble generator 12 that gas is used, the bubble of this device part 12a that spues is made of porous materials; At the upside of bubble generator 12, the utensil 18 of placing liquid crystal glass base is housed, this utensil can make a pair of liquid crystal glass base after liquid crystal glass base or the applying vertically insert.The placement utensil 18 of this liquid crystal glass base is configured in liquid crystal glass base and places in the fixed retainer tool 17 that utensil uses.
In chemical brightening solution storage tank 11, fill chemical brightening solution, this chemical brightening solution contain hydrofluoric acid and fluorochemical mixed solution (fluorochemical wherein comprise in Neutral ammonium fluoride, Potassium monofluoride and the Sodium Fluoride any or multiple), one or more the mineral acid that contains hydrochloric acid, sulfuric acid, phosphoric acid and nitric acid, one or more the organic acid that contains acetic acid and succsinic acid contains the anion surfactant and the amine amphoterics of sulfonate surfactant.
Around the upper limb of chemical brightening solution storage tank 11, be equiped with the spillage receiver 13 of the chemical brightening solution that acceptance overflows from chemical brightening solution storage tank 11.In spillage receiver 13, be connected with and be used for removing reaction that polishing produces and produce the strainer 14 of thing and the chemical brightening solution after the above-mentioned filtration is transported to the used pump 15 of storage tank 11 once more.In addition, downside at above-mentioned bubble generator 12 is provided with chemical brightening solution blowoff 16, the 16a of ejection portion of this device has a plurality of holes, be used for and spray to the bottom of chemical brightening solution storage tank from the chemical brightening solution of said pump 15 outputs, utilize blowoff 16 once more chemical brightening solution to be supplied with storage tank 11.
In the chemical rightenning device 1, ultrasonic vibrator can also be set or shake agitator (not illustrating among the figure),, can realize more uniform stirring chemical brightening solution ultrasonic vibrator being set or shaking under the situation of agitator.
Fig. 2 is the stereographic map of bubble generator 12.Bubble generator 12 is made up of with the several tubulose bubble ejection portion 12as that are connected parallel with gas introduction tube 12b the gas introduction tube 12b of gases such as importing nitrogen, and this tubulose bubble ejection 12a of portion is made of porous materials.
Fig. 3 is the stereographic map of the bubble ejection 12a of portion of other type bubble generator 12.The bubble ejection 12a of portion of the type bubble generator 12 is made of porous materials, for tabular.
Among Fig. 2 and Fig. 3, the aperture of the bubble squit hole of bubble ejection portion is 10～500 μ m for well.These bubble generators 12 are arranged at the downside that liquid crystal glass base is placed the fixed retainer tool 17 that utensil uses, and with micro-bubble upwards ejection from these pores, the micro bubble of ejection evenly rises chemical brightening solution.It is fresh polishing fluid that this rising liquid stream offers the liquid crystal glass base total surface, can prevent that simultaneously resultant of reaction such as silicofluoride from carrying out adventitious deposit again on the liquid crystal glass base surface.
The ascending fluid of micro bubble overflows around the upper limb of chemical brightening solution storage tank 11 behind the surface that arrives chemical brightening solution, is accepted by spillage receiver 13 then, through behind the strainer 14, offers chemical brightening solution storage tank 11 once more.
Under the situation that chemical brightening solution can not overflow, the cross-sectional area of rising fluid diversion decline liquid stream part hour, decline liquid stream is staggered in rising liquid stream, the homogeneity of the liquid stream of can not guaranteeing to rise.
Fig. 4 is the orthographic plan that chemical brightening solution storage tank 11 and liquid crystal glass base are placed the fixed retainer tool 17 that utensil uses.As shown in Figure 4, be equivalent to liquid crystal glass base place the fixed retainer tool 17 that utensil uses Outboard Sections decline liquid stream pass through cross-sectional area be equivalent to liquid crystal glass base place the fixed retainer tool 17 that utensil uses inside part rising liquid stream pass through 1～3 times of cross-sectional area the time, the homogeneity that the verified liquid of can guaranteeing to rise flows.
Resultant that the composition of liquid crystal glass base and chemical brightening solution react such as silicofluoride etc., upwelling with micro bubble is known from experience rising, if but these resultant of reaction circulate and be deposited on the bottom of chemical brightening solution storage tank 11, can influence the ejection of micro bubble in chemical brightening solution storage tank 11.Therefore, be necessary to prevent the deposition of resultant of reaction in chemical brightening solution storage tank 11 bottoms.
Fig. 5 is the stereographic map of chemical brightening solution blowoff 16.In this chemical brightening solution blowoff 16, be provided with a plurality of chemical brightening solution ejection 16a of portion that have a plurality of holes separately parallel to each other, the chemical brightening solution that is transferred out by pump 15 is sprayed downwards or tiltedly by this chemical brightening solution ejection 16a of portion, in the providing chemical polishing fluid, also can prevent the accumulation of resultant of reaction.
The method of control liquid crystal glass base polishing velocity, the measures such as temperature of the composition of the polishing fluid that changes and change polishing fluid.
Fig. 6 is the relation curve of the interpolation ratio of polishing velocity and 10 kinds of compositions of chemical brightening solution.This chemical brightening solution is the aqueous solution that contains 10 kinds of components such as hydrofluoric acid, Neutral ammonium fluoride, Potassium monofluoride, hydrochloric acid, sulfuric acid, phosphoric acid, nitric acid, acetic acid, sulfonate surfactant, amine tensio-active agent.
As can be seen from Figure 6, when the interpolation ratio of 10 kinds of compositions in the above-mentioned chemical brightening solution was 10%, polishing velocity was 1.1 μ m/ minutes; Along with the increase polishing velocity of adding ratio also can increase; When the interpolation ratio was 40%, polishing velocity reached maximum value, is 3.7 μ m/ minutes; Reduce a little subsequently, till the interpolation ratio was 90%, polishing velocity approximately remained on about 3 μ m/ minutes.
Add ratio 30% when following, polishing velocity is slower; On the other hand, add ratio 70% when above, glass surface produces gonorrhoea, and adhering at glass surface formation resultant of reaction residue.Therefore, be the control polishing velocity, add ratio and remain on 30～60% for well.
In addition, polishing velocity is in the time of 3.0～3.5 μ m/ minutes, and the Size Error of polished amount is out of question in the scope that allows.When being controlled in the scope of 20 μ m with the Size Error of polished amount, 0.5 μ m/ minute polishing velocity difference is equivalent to error (0.5 (μ m/ minute) * 40 (minute)=20 (the μ m) of 40 minutes polishing time), the error of polishing time is in allowed band.
Fig. 7 is the relation curve of polishing velocity and temperature.X-coordinate among this figure is the side-play amount with respect to reference temperature, and ordinate zou is a polishing velocity.
As can be seen from Figure 7, though along with the rising of temperature, polishing velocity slowly increases, and polishing velocity is between-5 ℃ to+5 ℃ the time in temperature, and 0.5 μ m/ minute difference is only arranged.
Therefore, when the Size Error of polished amount was controlled in the scope of 20 μ m, the error of polishing time can allow in 40 minutes.
When reality is implemented, in advance that laboratory sample is pre-soaked in the storage tank 11 of chemical brightening solution, determine that from the changing conditions of this sample thickness of slab polishing velocity is for well.
Embodiment
Below, by embodiment the present invention is specifically described.
[embodiment 1]
Adopt chemical rightenning device 1 of the present invention, the brand-new glass sample of following size is carried out chemical rightenning: (1) 320 * 400 * 1.1 (mm), (2) 400 * 500 * 0.7 (mm), target polished amount is respectively 0.3mm and 0.2mm.
At first, the composition that changes chemical brightening solution is examined or check to polishing velocity and to the influence of glass surface state, its result is as shown in table 1.
Table 1
| Polishing velocity μ m/ minute | 0.5 | 1.0 | 3.0 | 5.0 | 10.0 | 13.0 | 15.0 |
| Indenture | Do not have | Do not have | Do not have | Do not have | Do not have | Have | Have |
| External waviness | Do not have | Do not have | Do not have | Do not have | Do not have | Have | Have |
| The thickness of slab error | Little | Little | Little | Little | Little | In | Greatly |
| Former cut | Do not have | Do not have | Do not have | Do not have | Do not have | Have | Have |
In the table 1, having or not of indenture, external waviness and former cut is the result who estimates under the clean room intrinsic fluorescence lamp in darkroom.
Fig. 8 is the schematic plan view that locates of (2) glass substrate thickness of slab.In the table 1, to each position shown in Fig. 8, measure thickness of slab with ultrasonic thickness indicator, error is represented the difference of its maximum value and minimum value.Here " little " represented error below 50 μ m, " in " be 100～200 μ m, " greatly " is more than the 200 μ m.
According to the result of table 1, from the quality and the production operation viewpoint of product, polishing velocity 0.5～10 μ m/ minute for well, particularly in 1～5 μ m/ minute scope, suitable.
Polishing velocity was controlled at 2～3 μ m/ minutes, was sample with (2) glass substrate, had the situation of no marking to examine or check with method of the present invention to before and after the chemical rightenning.
Fig. 9 is the schematic plan view as a result that the situation that no marking is arranged before and after the chemical rightenning is examined or check.
As can be seen from Figure 9, the observed cut of energy disappears after polishing before the polishing.
Polishing velocity was controlled at 2～3 μ m/ minutes, was sample with (1) and (2) glass substrate, and to each position shown in Fig. 8, the thickness of slab of measuring with ultrasonic thickness indicator the results are shown in table 2.
Table 2 (mm)
Figure 10 is a synoptic diagram of the condition of surface of (2) glass substrate sample being examined or check the result with the surface roughness meter.
Can find out from the result of table 2 and Figure 10, adopt chemically polishing method of the present invention, when reaching target polished amount, can obtain the glass substrate that the substrate surface each point is even, have an even surface.
[embodiment 2]
The picture element of using with chromium (Cr) and chromatic filter to glass baseplate surface carry out graphical after, this substrate becomes undesirable.Therefore, be to eliminate the figure vestige, after chromium is peeled off, it is polished with chemical rightenning device of the present invention 1.The degree of depth of figure vestige is about 1 μ m.After polishing, the result who in the clean room in darkroom, under the light source of about 10,000 luxs, estimates, this figure vestige disappears.
[embodiment 3]
Two above-mentioned (2) glass substrates are fitted, obtain one group of glass substrate sample after the applying.Adopt chemical rightenning device 1 of the present invention to polish in this sample.Target polished amount is 0.2mm.
Figure 11 is the schematic plan view as a result that the situation that no marking is arranged before and after the chemical rightenning is examined or check.
As can be seen from Figure 11, the observed cut of energy disappears after polishing before the polishing.
Figure 12 is the floor map that the outer surface of the sample after two (2) glass substrates are fitted carries out the measurement of plate thickness position.Figure 13 is the floor map that the measurement of plate thickness position is carried out in the inside, the outside of the sample after two (2) glass substrates are fitted.
Provided the measurement result of above-mentioned surperficial thickness of slab in the table 3; Provided the measurement result of above-mentioned the inside thickness of slab in the table 4.
Table 3 (mm)
| The |
1 | 2 | 3 | 4 | 5 |
| Thickness of slab | 0.510 | 0.508 | 0.500 | 0.503 | 0.504 |
| The |
6 | 7 | 8 | 9 | Error |
| Thickness of slab | 0.508 | 0.506 | 0.510 | 0.508 | 0.010 |
Table 4 (mm)
| The |
11 | 12 | 13 | 14 | 15 |
| Thickness of slab | 0.506 | 0.500 | 0.505 | 0.505 | 0.500 |
| The |
16 | 17 | 18 | 19 | Error |
| Thickness of slab | 0.510 | 0.506 | 0.508 | 0.512 | 0.012 |
Can find out from table 3 and table 4, use chemically polishing method of the present invention, can carry out more uniform polishing glass substrate.
Above result shows, adopts chemical rightenning device 1 of the present invention to carry out chemical rightenning, in the thickness of slab attenuate of liquid crystal glass base, can make the flattening surface of glass substrate.And, can also eliminate the cut that comes into existence in glass baseplate surface, make the utilization again of glass become possibility.
In addition, adopt chemically polishing method of the present invention,, can both carry out large-duty polishing no matter how many sizes of liquid crystal glass base is.
Moreover chemical rightenning device 1 of the present invention is not limited to the pattern of front implementation, can carry out various changes.
As described above in detail, under the situation of the 1st invention, employing contains the mixed solution of hydrofluoric acid and fluorochemical, and (fluorochemical wherein comprises Neutral ammonium fluoride, in Potassium monofluoride and the Sodium Fluoride any or multiple), contain hydrochloric acid, sulfuric acid, the mineral acid of one or more of phosphoric acid and nitric acid, one or more the organic acid that contains acetic acid and succsinic acid, contain the anion surfactant of sulfonate surfactant and the chemical brightening solution of amine amphoterics, the control polishing velocity is between 0.5～10 μ m/ minute, outside surface to liquid crystal glass base carries out chemical rightenning, can when making the thickness of slab attenuate of liquid crystal glass base, make the glass baseplate surface planarization.
Under the situation of the 2nd to the 5th invention, because chemical brightening solution is evenly risen, can always provide fresh polishing fluid on the surface of liquid crystal glass base, can prevent that simultaneously resultant of reaction is at liquid crystal glass base Surface Physical adventitious deposit again.Therefore, can flow with the rising of bubble and control polishing velocity, thereby can when making the reduced thickness of liquid crystal glass base, make more planarization of surface.
In addition, adopt chemically polishing method of the present invention,, can both carry out high productivity, polishing uniformly no matter how many sizes of liquid crystal glass base is.
Have again, adopt chemically polishing method of the present invention, can eliminate the cut that originally is present in the liquid crystal glass base surface, make the utilization again of glass become possibility.
Under the situation of the 6th invention, chemical brightening solution is evenly risen, overflow from the storage tank edge after rising to the top, after resultant of reaction removed, flow to the polishing fluid storage tank once more, polishing fluid is recycled, and the total surface of liquid crystal glass base is to have fresh polishing fluid to supply with, and can prevent that resultant of reaction from carrying out physics adventitious deposit again on the liquid crystal glass base surface simultaneously.
The convex part on liquid crystal glass base surface owing to be subjected to the moving influence of bubble upwelling, always can obtain activated polishing liquid, is played a leading role by the speed of response law, and it is very fast that its polishing velocity becomes.In contrast, the recessed part on liquid crystal glass base surface, not smooth because of flowing of polishing fluid, play a leading role by diffusion law, polishing velocity is slack-off, thereby can make flattening surface when making the liquid crystal glass base reduced thickness.
Under the situation of the 7th invention, can polish uniformly simultaneously the liquid crystal glass base of multi-disc or the glass substrate after a pair of applying.
Under the situation of the 8th invention, because be equipped with ultrasonic vibrator or shake agitator, so, can carry out more uniform stirring to chemical brightening solution.
Claims (2)
1. chemical rightenning device, it is used for polishing fluid crystal glass outer surface of substrate, it is characterized in that having:
Store the chemical brightening solution storage tank of chemical brightening solution,
The bubble generator that the gas that be configured in described chemical brightening solution storage tank bottom, will import from the outside of described chemical brightening solution storage tank spues,
Be arranged on around the upper limb of described chemical brightening solution storage tank, accept the spillage receiver of the chemical brightening solution that overflows from described chemical brightening solution storage tank,
Send the chemical brightening solution after filtering the pump of described chemical brightening solution storage tank back to once more, and
Be configured in bubble generator downside, will by the described chemical brightening solution that pumps out spue described chemical brightening solution storage tank the bottom, have the device for discharging fixed in a plurality of holes.
2. the chemical rightenning device of claim 1 wherein, is equipped with ultrasonic vibrator or shakes agitator.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001114498 | 2001-04-12 | ||
| JP114498/2001 | 2001-04-12 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021059632A Division CN1277142C (en) | 2001-04-12 | 2002-04-11 | Chemical polishing method and device for liquid crystal glass base plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1724432A CN1724432A (en) | 2006-01-25 |
| CN100462319C true CN100462319C (en) | 2009-02-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021059632A Expired - Fee Related CN1277142C (en) | 2001-04-12 | 2002-04-11 | Chemical polishing method and device for liquid crystal glass base plate |
| CNB2005100833270A Expired - Fee Related CN100462319C (en) | 2001-04-12 | 2002-04-11 | Chemical polishing method and glass base plate with the method and chemical polishing device |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021059632A Expired - Fee Related CN1277142C (en) | 2001-04-12 | 2002-04-11 | Chemical polishing method and device for liquid crystal glass base plate |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR100380844B1 (en) |
| CN (2) | CN1277142C (en) |
| SG (1) | SG94843A1 (en) |
| TW (1) | TWI263079B (en) |
Families Citing this family (25)
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| SG121817A1 (en) * | 2002-11-22 | 2006-05-26 | Nishiyama Stainless Chemical Co Ltd | Glass substrate for flat planel display, and process for producing the same |
| CN100343420C (en) * | 2004-07-21 | 2007-10-17 | 常耀辉 | Fast chemical grinding polishing bath liquid for stainless steel surface and its method |
| JP2007197236A (en) * | 2006-01-25 | 2007-08-09 | Nishiyama Stainless Chem Kk | Method for manufacturing glass substrate for display and glass substrate |
| CN101089688B (en) * | 2006-06-14 | 2010-09-29 | 比亚迪股份有限公司 | Manufacturing method of superthin liquid crystal box |
| CN100392477C (en) * | 2006-07-07 | 2008-06-04 | 南京大学 | Liquid crystal display panel resource processing method |
| KR101233687B1 (en) * | 2010-10-28 | 2013-02-15 | 삼성디스플레이 주식회사 | Apparatus of etching a glass substrate |
| JP5829458B2 (en) * | 2011-08-25 | 2015-12-09 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing equipment |
| CN103033403B (en) * | 2011-09-29 | 2015-09-02 | 鞍钢股份有限公司 | A kind of preparation method of thin-sheet metal film test sample |
| CN102643028A (en) * | 2012-05-14 | 2012-08-22 | 深圳市拓捷科技发展有限公司 | Glass thinning equipment and method |
| CN102701597B (en) * | 2012-06-26 | 2014-10-08 | 汕头市拓捷科技有限公司 | Rapid glass thinning equipment |
| CN102701598B (en) * | 2012-06-26 | 2015-09-30 | 广东拓捷科技有限公司 | A kind of glass thinning apparatus of improvement |
| CN103046053B (en) * | 2012-09-21 | 2015-04-01 | 中国兵器工业第二一三研究所 | Chemical polishing method of stainless steel by high-temperature oxidation |
| CN103508676A (en) * | 2013-07-24 | 2014-01-15 | 芜湖长信科技股份有限公司 | Method for avoiding defect in LCD glass substrate thinning process and acid solution configuration method |
| TW201519308A (en) * | 2013-11-13 | 2015-05-16 | Grand Plastic Technology Corp | Circulation type uniformly etching device |
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| JP6323695B2 (en) * | 2016-09-30 | 2018-05-16 | パナソニックＩｐマネジメント株式会社 | Polishing liquid for glass and polishing method |
| CN107286853A (en) * | 2017-07-12 | 2017-10-24 | 天津津航技术物理研究所 | A kind of devitrified glass high brightness chemical polishing solution and preparation method |
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| CN109111859A (en) * | 2018-10-30 | 2019-01-01 | 秦皇岛市大龙建材有限公司 | Glass polishing solution |
| CN111029230B (en) * | 2019-12-13 | 2022-04-05 | 山西长城微光器材股份有限公司 | Micro-channel plate in-channel polishing method |
| CN111925126A (en) * | 2020-08-12 | 2020-11-13 | 郑州恒昊光学科技有限公司 | Paste for repairing slight scratch of optical glass |
| CN116042098A (en) * | 2023-02-08 | 2023-05-02 | 广东粤港澳大湾区黄埔材料研究院 | Nano alumina polishing solution and application thereof in polishing of infrared chalcogenide glass |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0641770A (en) * | 1992-07-27 | 1994-02-15 | Daikin Ind Ltd | Treatment for surface of silicon wafer |
| CN1088002A (en) * | 1992-11-16 | 1994-06-15 | 东京电子株式会社 | Make the method and apparatus of liquid crystal display substrate and evaluating semiconductor crystals |
| JPH10109012A (en) * | 1996-10-04 | 1998-04-28 | Stec Kk | Deodorizing method and deodorizing device for garbage disposal |
| JPH11111658A (en) * | 1997-10-06 | 1999-04-23 | Dainippon Screen Mfg Co Ltd | Method and device for processing substrate |
| US6174371B1 (en) * | 1997-10-06 | 2001-01-16 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating method and apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5854974A (en) * | 1981-09-28 | 1983-04-01 | 三菱電機株式会社 | Golf exerciser |
| JP3531961B2 (en) * | 1994-02-01 | 2004-05-31 | 横浜ゴム株式会社 | Endless processing method of steel cord belt and cooling / refrigeration apparatus for implementing the endless processing method |
-
2001
- 2001-04-30 KR KR10-2001-0023329A patent/KR100380844B1/en not_active IP Right Cessation
- 2001-05-01 TW TW090110411A patent/TWI263079B/en not_active IP Right Cessation
- 2001-06-05 SG SG200103698A patent/SG94843A1/en unknown
-
2002
- 2002-04-11 CN CNB021059632A patent/CN1277142C/en not_active Expired - Fee Related
- 2002-04-11 CN CNB2005100833270A patent/CN100462319C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0641770A (en) * | 1992-07-27 | 1994-02-15 | Daikin Ind Ltd | Treatment for surface of silicon wafer |
| CN1088002A (en) * | 1992-11-16 | 1994-06-15 | 东京电子株式会社 | Make the method and apparatus of liquid crystal display substrate and evaluating semiconductor crystals |
| JPH10109012A (en) * | 1996-10-04 | 1998-04-28 | Stec Kk | Deodorizing method and deodorizing device for garbage disposal |
| JPH11111658A (en) * | 1997-10-06 | 1999-04-23 | Dainippon Screen Mfg Co Ltd | Method and device for processing substrate |
| US6174371B1 (en) * | 1997-10-06 | 2001-01-16 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating method and apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI263079B (en) | 2006-10-01 |
| CN1380572A (en) | 2002-11-20 |
| CN1277142C (en) | 2006-09-27 |
| CN1724432A (en) | 2006-01-25 |
| KR20020080215A (en) | 2002-10-23 |
| KR100380844B1 (en) | 2003-04-18 |
| SG94843A1 (en) | 2003-03-18 |
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