CN100456387C - 半导体存储器 - Google Patents

半导体存储器 Download PDF

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Publication number
CN100456387C
CN100456387C CNB2005100737517A CN200510073751A CN100456387C CN 100456387 C CN100456387 C CN 100456387C CN B2005100737517 A CNB2005100737517 A CN B2005100737517A CN 200510073751 A CN200510073751 A CN 200510073751A CN 100456387 C CN100456387 C CN 100456387C
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CN
China
Prior art keywords
signal
burst
control circuit
data
output
Prior art date
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Expired - Fee Related
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CNB2005100737517A
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English (en)
Chinese (zh)
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CN1700351A (zh
Inventor
藤岡伸也
奥山好明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Socionext Inc
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Fujitsu Semiconductor Ltd
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Publication of CN1700351A publication Critical patent/CN1700351A/zh
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CNB2005100737517A 2002-04-15 2003-01-10 半导体存储器 Expired - Fee Related CN100456387C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP111877/2002 2002-04-15
JP2002111877 2002-04-15
JP156832/2002 2002-05-30

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB031015395A Division CN1225697C (zh) 2002-04-15 2003-01-10 半导体存储器

Publications (2)

Publication Number Publication Date
CN1700351A CN1700351A (zh) 2005-11-23
CN100456387C true CN100456387C (zh) 2009-01-28

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ID=35476351

Family Applications (1)

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CNB2005100737517A Expired - Fee Related CN100456387C (zh) 2002-04-15 2003-01-10 半导体存储器

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JP (1) JP4489784B2 (enExample)
CN (1) CN100456387C (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101499314B (zh) * 2008-01-29 2012-02-29 财团法人工业技术研究院 存储器装置与其更新方法
KR101020290B1 (ko) * 2009-01-12 2011-03-07 주식회사 하이닉스반도체 버스트모드 제어회로
KR102479500B1 (ko) * 2018-08-09 2022-12-20 에스케이하이닉스 주식회사 메모리 장치, 메모리 시스템 및 그 메모리 장치의 리프레시 방법
KR20200056731A (ko) * 2018-11-15 2020-05-25 에스케이하이닉스 주식회사 반도체장치
KR20210121660A (ko) * 2020-03-31 2021-10-08 에스케이하이닉스 주식회사 메모리 시스템 및 그것의 동작 방법
CN113495676B (zh) * 2020-04-01 2023-09-29 长鑫存储技术有限公司 读写方法及存储器装置
CN113495674B (zh) 2020-04-01 2023-10-10 长鑫存储技术有限公司 读写方法及存储器装置
CN113900580B (zh) * 2020-07-06 2024-09-27 旺宏电子股份有限公司 存储器装置、电子装置及与其相关的读取方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5444667A (en) * 1993-04-02 1995-08-22 Nec Corporation Semiconductor synchronous memory device having input circuit for producing constant main control signal operative to allow timing generator to latch command signals
CN1115102A (zh) * 1993-07-14 1996-01-17 三星电子株式会社 在半导体存储器件中控制自更新周期的电路
CN1214518A (zh) * 1997-08-28 1999-04-21 日本电气株式会社 脉冲串式半导体存储装置
US5901101A (en) * 1996-08-29 1999-05-04 Fujitsu Limited Semiconductor memory device
JPH11213660A (ja) * 1998-01-27 1999-08-06 Mitsubishi Electric Corp 半導体記憶装置
EP1030313A2 (en) * 1999-02-16 2000-08-23 Fujitsu Limited Semiconductor device having test mode entry circuit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06111568A (ja) * 1992-09-28 1994-04-22 Sanyo Electric Co Ltd 画像メモリ装置
JPH08129882A (ja) * 1994-10-31 1996-05-21 Mitsubishi Electric Corp 半導体記憶装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5444667A (en) * 1993-04-02 1995-08-22 Nec Corporation Semiconductor synchronous memory device having input circuit for producing constant main control signal operative to allow timing generator to latch command signals
CN1115102A (zh) * 1993-07-14 1996-01-17 三星电子株式会社 在半导体存储器件中控制自更新周期的电路
US5901101A (en) * 1996-08-29 1999-05-04 Fujitsu Limited Semiconductor memory device
CN1214518A (zh) * 1997-08-28 1999-04-21 日本电气株式会社 脉冲串式半导体存储装置
JPH11213660A (ja) * 1998-01-27 1999-08-06 Mitsubishi Electric Corp 半導体記憶装置
EP1030313A2 (en) * 1999-02-16 2000-08-23 Fujitsu Limited Semiconductor device having test mode entry circuit

Also Published As

Publication number Publication date
CN1700351A (zh) 2005-11-23
JP4489784B2 (ja) 2010-06-23
JP2007103009A (ja) 2007-04-19

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Owner name: FUJITSU SEMICONDUCTOR CO., LTD.

Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD.

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CF01 Termination of patent right due to non-payment of annual fee