CN100451837C - 图形描绘装置和图形描绘方法 - Google Patents

图形描绘装置和图形描绘方法 Download PDF

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Publication number
CN100451837C
CN100451837C CNB2005100668540A CN200510066854A CN100451837C CN 100451837 C CN100451837 C CN 100451837C CN B2005100668540 A CNB2005100668540 A CN B2005100668540A CN 200510066854 A CN200510066854 A CN 200510066854A CN 100451837 C CN100451837 C CN 100451837C
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China
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mentioned
light
rayed zone
spacing
rayed
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CNB2005100668540A
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English (en)
Chinese (zh)
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CN1716099A (zh
Inventor
城田浩行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Skilling Group
Dainippon Screen Manufacturing Co Ltd
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Dainippon Screen Manufacturing Co Ltd
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Publication of CN1716099A publication Critical patent/CN1716099A/zh
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70283Mask effects on the imaging process
    • G03F7/70291Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB2005100668540A 2004-06-14 2005-04-29 图形描绘装置和图形描绘方法 Active CN100451837C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004174916 2004-06-14
JP2004174916A JP2005353927A (ja) 2004-06-14 2004-06-14 パターン描画装置

Publications (2)

Publication Number Publication Date
CN1716099A CN1716099A (zh) 2006-01-04
CN100451837C true CN100451837C (zh) 2009-01-14

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CNB2005100668540A Active CN100451837C (zh) 2004-06-14 2005-04-29 图形描绘装置和图形描绘方法

Country Status (4)

Country Link
JP (1) JP2005353927A (ja)
KR (1) KR100678507B1 (ja)
CN (1) CN100451837C (ja)
TW (1) TWI301932B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106647178A (zh) * 2016-11-25 2017-05-10 天津津芯微电子科技有限公司 光直写成像设备以及系统

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5182913B2 (ja) 2006-09-13 2013-04-17 大日本スクリーン製造株式会社 パターン描画装置およびパターン描画方法
JP2010197750A (ja) * 2009-02-25 2010-09-09 Hitachi High-Technologies Corp 露光装置、露光方法、及び表示用パネル基板の製造方法
JP5355245B2 (ja) * 2009-06-25 2013-11-27 株式会社日立ハイテクノロジーズ 露光装置、露光方法、及び表示用パネル基板の製造方法
JP5331622B2 (ja) * 2009-09-02 2013-10-30 株式会社日立ハイテクノロジーズ 露光装置
KR101344037B1 (ko) * 2011-10-19 2013-12-24 주식회사 인피테크 노광용 led 광원 모듈, 노광용 led 광원 장치 및 노광용 led 광원장치 관리시스템
JP7309759B2 (ja) * 2018-06-19 2023-07-18 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 描画点を露光するための方法および装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001133893A (ja) * 1999-11-04 2001-05-18 Noritsu Koki Co Ltd ライン露光式画像形成装置
US6552779B2 (en) * 2000-05-25 2003-04-22 Ball Semiconductor, Inc. Flying image of a maskless exposure system
JP2003332221A (ja) * 2002-05-16 2003-11-21 Dainippon Screen Mfg Co Ltd 露光装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001133893A (ja) * 1999-11-04 2001-05-18 Noritsu Koki Co Ltd ライン露光式画像形成装置
US6552779B2 (en) * 2000-05-25 2003-04-22 Ball Semiconductor, Inc. Flying image of a maskless exposure system
JP2003332221A (ja) * 2002-05-16 2003-11-21 Dainippon Screen Mfg Co Ltd 露光装置
CN1459662A (zh) * 2002-05-16 2003-12-03 大日本网目版制造株式会社 图案记录装置和图案记录方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106647178A (zh) * 2016-11-25 2017-05-10 天津津芯微电子科技有限公司 光直写成像设备以及系统

Also Published As

Publication number Publication date
CN1716099A (zh) 2006-01-04
TW200540577A (en) 2005-12-16
KR20060046159A (ko) 2006-05-17
JP2005353927A (ja) 2005-12-22
TWI301932B (en) 2008-10-11
KR100678507B1 (ko) 2007-02-02

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Owner name: SCREEN GROUP CO., LTD.

Free format text: FORMER NAME: DAINIPPON SCREEN MFG. CO., LTD.

Owner name: DAINIPPON SCREEN MFG. CO., LTD.

Free format text: FORMER NAME: DAINIPPON MESH PLATE MFR. CO., LTD.

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Address after: Kyoto Japan

Patentee after: Skilling Group

Address before: Kyoto Japan

Patentee before: DAINIPPON SCREEN MFG Co.,Ltd.

Address after: Kyoto Japan

Patentee after: DAINIPPON SCREEN MFG Co.,Ltd.

Address before: Kyoto Japan

Patentee before: Dainippon Screen Mfg. Co.,Ltd.