TW200540577A - Pattern writing apparatus and pattern writing method - Google Patents

Pattern writing apparatus and pattern writing method Download PDF

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Publication number
TW200540577A
TW200540577A TW094112212A TW94112212A TW200540577A TW 200540577 A TW200540577 A TW 200540577A TW 094112212 A TW094112212 A TW 094112212A TW 94112212 A TW94112212 A TW 94112212A TW 200540577 A TW200540577 A TW 200540577A
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Taiwan
Prior art keywords
light
light irradiation
pattern
pitch
scanning direction
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TW094112212A
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Chinese (zh)
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TWI301932B (en
Inventor
Hiroyuki Shirota
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Dainippon Screen Mfg
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Publication of TWI301932B publication Critical patent/TWI301932B/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70283Mask effects on the imaging process
    • G03F7/70291Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

An arrangement of irradiation regions (61) which correspond to micromirros of a DMD is tilted relatively to an arrangement of writing cells (620). Writing of a pattern is performed by relative movement of a irradiation region group to a writing cell group in a main scanning direction. A center-to-center distance along a sub-scanning direction between two adjacent irradiation regions (61) arranged almost in the main scanning direction is made equal to a writing pitch of writing cells (620), and a center-to-center distance along main scanning direction between them is made "a times" the writing pitch. ON/OFF control of light irradiation is performed once during relative movement of the irradiation region group by a distance equal to "n times" the writing pitch (n is an integer larger than 2). Appropriate pattern writing with high resolution at a high speed is realized where(a2+1) and n are relatively prime.

Description

200540577 九、發明說明: 【發明所屬之技術領域】 本發明為關於在感光材料照射被空間調變的光而描畫 圖案之圖案描晝裝置。 【先前技術】200540577 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a pattern drawing device for drawing a pattern on a photosensitive material by irradiating light modulated in space. [Prior art]

以前即被提案有使用空間光調變裝置在感光材料上描 晝圖案之技術。此種技術,例如,在日本特開2 0 0 3 - 3 3 2 2 2 1 號公報(文獻 1 )揭示有藉 DMD(數位微鏡裝置 Digi tal m i c r o m i r r o r d e v i c e )對被投影之光照射領域群在其排列 方向朝傾斜的掃描方向和感光材料上掃描’而以比光照射 領域群更高之密度在感光材料上被設定的描晝單位圖案胞 (writing cell)群之描晝圖案技術。又,在專利文獻1也 揭示有藉光照射領域群在各移動描晝單位圖案胞2個份之 距離對各光照射領域作光照射之0 N / 0 F F控制,以倍速實施 描晝之方法。 但是藉半導體基板或印刷基板的微細化而提高圖案之 描晝速度變成很重要,在專利文獻1之方法中也以超過2 倍速的速度而希望可實現圖案描畫。但是,單純只提高光 照射領域群的移動速度並不一定可適切地實現高速描晝。 【發明内容】 本發明為適用於在感光材料照射光而描晝圖案之圖案 描晝裝置,其目的為對2次元排列之光照射領域群於排列 方向呈傾斜的掃描方向掃描而以南解析度實施描晝時,可 實現高速且適當之描晝者。 6 3 ] 2XP/發明說明書(補件)/94-08/94112212A technique for drawing a daylight pattern on a photosensitive material using a spatial light modulation device has been proposed before. Such a technique, for example, is disclosed in Japanese Patent Laid-Open Publication No. 2000- 3 3 2 2 2 1 (Document 1). It is disclosed that a projected light irradiated field group by DMD (Digi tal micromirror device) is in its field. The arrangement direction is inclined to the scanning direction and scanning on the photosensitive material, and the writing pattern of the writing unit group is set on the photosensitive material at a higher density than the light irradiation field group. In addition, Patent Document 1 discloses a method of performing 0 N / 0 FF control of light irradiation on each light irradiation field by using a light irradiation field group at a distance of two copies of each pattern cell of each day of the movement. . However, it is important to increase the daytime drawing speed of a pattern by miniaturizing a semiconductor substrate or a printed circuit board. In the method of Patent Document 1, it is also desired to realize pattern drawing at a speed of more than 2 times. However, simply increasing the moving speed of the light-irradiated field group does not necessarily achieve high-speed tracing appropriately. [Summary of the Invention] The present invention is a pattern drawing device suitable for drawing a daylight pattern by irradiating light on a photosensitive material. The purpose of the present invention is to scan a group of light irradiated fields in a two-dimensional array in a scanning direction inclined in the array direction and to the south. When performing day-tracing, high-speed and appropriate day-tracing can be achieved. 6 3] 2XP / Invention Manual (Supplement) / 94-08 / 94112212

200540577 本發明之圖案描畫裝置為具有:在感光材料上之互 直的2個排歹U方向對各別以一定的節距(p i t c h )所排、 光照射領域群照射被調變的光之光照射部;及,在感 料上對光照射領域群以對排列方向傾斜之掃描方向予 描,在掃描方向及和掃描方向垂直方向以一定的掃描 對各別被固定排列在感光材料上的描晝領域群使複數 照射領域相對通過的掃描機構;及,和光照射領域群 描同步而藉對光照射領域各別控制光照射之0 N / 0 F F, 制照射在感光材料上之各描晝領域之光的量之控制部 光照射領域群之2個排列方向之中大致沿著掃描方向 向之互相隣接的光照射領域中,對掃描方向垂直方向 心之間的距離為等於描晝節距,而對掃描方向之中心 距離為描晝節距之a倍(但是,a為2以上之整數),; 部僅在光照射領域群在相對移動其距離為描晝節距之 (但是,η為3以上之整數)作一次光照射之0 N / 0 F F控 而(a2 + l)和 η 互為素數(relatively prime)。 根據本發明,使用被空間調變的光可以高解像度實 速描晝。 較佳為,在光照射領域群中上述2個排列方向中沿 致掃描方向之方向所排列的光照射領域為Μ,Μ為(a X 整數倍,藉此,可在各描晝領域僅以相同次數作重覆曝 又,在發明之一形態為,對光照射領域的光照射在 0 N之後,在光照射領域群的描畫節距之η倍距離相對 終了前對光照射領域之光照射成為 OFF。較好是在對 312ΧΡ/發明說明書(補件)/94-08/94112212 相垂 W之 光材 以掃 節距 個光 之掃 並控 •,在 的方 之中 間的 f空制 η倍 制, 施南 著大 η )之 光。 成為 移動 光照 7 200540577 射領域的光照射自成為0 N至成為0 F F之間,光照射領域群 僅相對移動描畫節距。藉此,可抑制掃描方向描畫解析度 之降低。實施此一描畫控制時,光照射部以具備有可控制 ON/OFF 之光源及可將光源的光空間調變之空間光調變裝 置者較佳,藉控制光源之0 N / 0 F F則可容易抑制掃描方向的 解析度之降低。 又,本發明也可適用於在感光材料上照射光而描畫圖案 之圖案描晝方法。200540577 The pattern drawing device of the present invention is provided with: two mutually-aligned rows on the photosensitive material, aligned in a U-direction, and arranged at a certain pitch, and the light irradiation field group irradiates the modulated light The irradiating section; and the light irradiating field group is described on the sensing material with a scanning direction inclined to the arrangement direction, and the scanning that is fixedly arranged on the photosensitive material in the scanning direction and a direction perpendicular to the scanning direction is respectively A scanning mechanism that allows a plurality of irradiated fields to pass relatively in the day field group; and synchronizes with the light irradiation field group to control 0 N / 0 FF of the light irradiation field by individually controlling the light irradiation field, to make each day field irradiated on the photosensitive material In the two arranging directions of the light irradiation area group of the light irradiation area group, the distance between the centers perpendicular to the scanning direction in the light irradiation areas adjacent to each other along the scanning direction is equal to the tracing pitch. The center distance to the scanning direction is a times the tracing pitch (however, a is an integer of 2 or more); η is an integer of 3 or more) for irradiating the primary light 0 N / 0 F F control and (a2 + l) and η are coprime (relatively prime). According to the present invention, daylight can be rapidly traced with high resolution using spatially modulated light. Preferably, in the light irradiation field group, the light irradiation field arranged in the direction leading to the scanning direction among the two arrangement directions is M, and M is an integer multiple of (a X). Repeated exposure at the same number of times. In one form of the invention, after the light in the light irradiation field is irradiated to 0 N, the light irradiation field group has a η multiple of the drawing pitch, and the light irradiation in the light irradiation field is relatively completed before the end. OFF. It is better to control and control the 312 × P / Invention Specification (Supplement) / 94-08 / 94112212, the light material that is perpendicular to the W, and scan the light with a pitch, and control the f space in the middle of the square. Doubled, Shi Nan's light of great η). Become Mobile Illumination 7 200540577 The light irradiation in the shooting area ranges from 0 N to 0 F F. The light irradiation area group only moves relatively to draw the pitch. This can suppress a reduction in the drawing resolution in the scanning direction. When this drawing control is implemented, it is preferable that the light irradiating part is provided with a light source capable of controlling ON / OFF and a spatial light modulation device capable of spatially modulating the light of the light source. By controlling 0 N / 0 FF of the light source, It is easy to suppress a decrease in the resolution in the scanning direction. The present invention is also applicable to a pattern drawing method in which a pattern is drawn by irradiating light on a photosensitive material.

以下參照圖式詳細說明本發明之上述目的、特徵、態樣 及優點。 【實施方式】 圖1表示本發明之一實施形態的圖案描晝裝置1之構成 圖。圖1為表示裝置之内部構造而以虛線表示裝置之一部 份。圖案描晝裝置1為具有:可保持形成光阻膜的基板 9 之工作台(stage)2、對圖1中之Y方向可移動工作台2之 φ 工作台移動裝置31、朝基板9可射出光束之光照射部4、 對圖1中之X方向可移動光照射部4的頭部4 0之頭部移動 機構3 2、及,被接續至光照射部4及頭部移動機構3 2之 控制部5。 光照射部4具有被接續至頭部4 0之光源單元4 1,光源 單元41具有光源之高輸出的LED411及透鏡群412,自透 . 鏡群4 1 2來的光入射至光纖4 1 3而被導入頭部4 0。頭部4 0 具有設置排列成格子狀之微小鏡群的 DMD42,藉由微小鏡 群自光源單元4 1來的光束被反射而導出2次元空間調變之 8 312XP/發明說明書(補件)/94-08/941]2212 200540577 光束。 具體而言,自光纖 4 1 3被射出的光為藉由標尺積分器 (rodintegrator)433、透鏡 434 及鏡 435 而被導入鏡 436, 、 鏡436再將光束聚集導入DMD42。對DMD42入射之光束為 以一定的入射角而均勻地照射至 D M D 4 2 之微小鏡群。如 上,藉標尺積分器433、透鏡434、鏡435及鏡436使自光 源單元41來的光導入DMD42而構成照明光學系統43。The above objects, features, aspects and advantages of the present invention will be described in detail below with reference to the drawings. [Embodiment] Fig. 1 is a diagram showing a configuration of a pattern tracing device 1 according to an embodiment of the present invention. Fig. 1 shows the internal structure of the device and a part of the device is shown in dotted lines. The pattern tracer device 1 includes a stage 2 capable of holding a substrate 9 forming a photoresist film, and a φ stage moving device 31 that can move the Y-direction movable table 2 in FIG. 1 and can project toward the substrate 9. The light irradiation unit 4 of the light beam, the head movement mechanism 3 2 for the head 40 of the X-direction movable light irradiation unit 4 in FIG. 1, and, connected to the light irradiation unit 4 and the head movement mechanism 3 2 Controller 5. The light irradiating unit 4 has a light source unit 41 connected to the head 40, and the light source unit 41 has a high-output LED 411 and a lens group 412, which are transparent. The light from the lens group 4 1 2 is incident on the optical fiber 4 1 3 Instead, it is imported into the head 40. The head 40 has a DMD42 arranged with a small mirror group arranged in a grid. The light beam from the light source unit 41 is reflected by the small mirror group to derive a two-dimensional spatial modulation 8 312XP / Invention Specification (Supplement) / 94-08 / 941] 2212 200540577 beam. Specifically, the light emitted from the optical fiber 4 1 3 is guided to a mirror 436 by a rod integrator 433, a lens 434, and a mirror 435, and the mirror 436 collects the light beam and guides it to the DMD 42. The light beam incident on the DMD42 is a small mirror group that uniformly irradiates the D M D 4 2 at a certain incident angle. As described above, the scale integrator 433, the lens 434, the mirror 435, and the mirror 436 cause the light from the light source unit 41 to be introduced into the DMD 42 to constitute the illumination optical system 43.

在DMD42的各微小鏡中藉由以既定姿勢(在後述藉DMD42 之光照射的說明中,係對應於〇 Ν狀態之姿勢)之微小鏡來 的反射光所形成之被調變的光束之束(亦即,被空間調變之 光束)為對立方體光線分割器(cube beam splitter)441入 射而反射,藉可變焦距透鏡(zoomlens)442而被調整倍率 並被導入至投影透鏡4 4 3。可變焦距透鏡4 4 2為藉焦距用 之致動器(actuator)442a而可變倍,投影透鏡443為以自 動焦點(A F )用之致動器(a c t u a t 〇 r ) 4 4 3 a而可對準焦點。 又,自投影透鏡4 3 9來之光束為對微小鏡群被導入光學上 有共軛(c ο n j u g a t e )之基板9上的領域,以各微小鏡照射而 被調變(亦即’成為調變之因素)之光束所對應之光照射領 域。因此’圖案描晝裝置1為藉立方體光線分割器4 41、 可變焦距透鏡4 4 2、投影透鏡4 4 3,使自各微小鏡來的光對 基板9上所對應之光照射領域縮小投影而構成投影光學系 統4 4 〇 又’在立方形光線分割器441之上方,配置有半透.明鏡 half-mirr〇r)45 1、AF 用之雷射二極警(LD) 4 5 2 及 AF 檢測 而綱說明書(補件)麵則2212 9Modified light beams formed by the reflected light from the micromirrors in the DMD42 mirrors in a predetermined posture (in the description of light irradiation by the DMD42 described later, the posture corresponding to the ON state) (That is, the light beam modulated by space) is incident on the cube beam splitter 441 and reflected, and the magnification is adjusted by the zoom lens 442 and introduced to the projection lens 4 4 3. The variable focal length lens 4 4 2 is variable magnification by an actuator 442a for focal length, and the projection lens 443 is an actuator (actuat 〇r) 4 4 3 a for auto focus (AF). Focus. In addition, the light beam from the projection lens 4 3 9 is a region that is introduced into the optically conjugated (c ο njugate) substrate 9 to the micro-mirror group, and is irradiated with each micro-mirror to be modulated (that is, becomes a modulation Changing factors) of the light irradiation area corresponding to the light beam. Therefore, the 'pattern tracer device 1' uses a cube beam splitter 4 41, a variable focal length lens 4 4 2, and a projection lens 4 4 3 to reduce the projection of light from each micromirror to the corresponding light irradiation area on the substrate 9 and The projection optical system 4 4 〇 is' above the cube-shaped beam splitter 441, a semi-transparent lens is arranged. (Mirror half-mirr) 45 1. Laser diode (LD) 4 5 2 and AF for AF Inspection and outline (supply) 2222 9

200540577 用之感測器4 5 3,由L D 4 5 2來的光透過半透明鏡 立方形光線分割器4 4 1、可變焦距透鏡4 4 2、投景 而照射至基板9上,自基板9的光進入逆方向而 鏡4 5 1被反射再藉由感測器4 5 3被檢測。感測器 出被利用於A F時之致動器(a c t u a t 〇 r ) 4 4 3 a的控 工作台2被固定在線型馬達之工作台移動機相 動體側,其藉由控制部5控制工作台移動機構3 : 鏡群來的光被照射的光照射領域群(1個微小鏡對 光照射領域)而在圖1中使光阻膜上之Y方向連續 動。亦即,光照射領域群為對頭部4 0被相對的固 基板9的移動使光照射領域群在基板9上移動。 頭部4 0被固定在頭部移動機構3 2的移動體側 射領域群的主掃描方向(圖1中之Y方向)間歇地 副掃描方向(X 方向)移動。亦即,在每次主掃描 部移動機構3 2則對次一個主掃描的開始位置使马 動至X方向。 圖2表示DMD42。DMD42為在矽基板421之上 隔格子狀配列多數個微小鏡(m i c r 〇 - m i r r 〇 r )(以 相垂直之2方向排列成M列N行來說明)之微小 的空間光調變裝置,依照對應於各微小鏡被寫入 元(m e m 〇 r y c e 1 1 )的資料,各微小鏡藉靜電場作用 定角度傾斜。又,光為對DMD42呈垂直之行方向 45度的角度之面以入射角24度入射,而可均勻 小鏡照明。DMD42 實際為使用具有 7 6 8歹|J (row 312ΧΡ/發明說明書(補件)/94-08/941122 ] 2 451藉由 多透鏡443 以半透明 4 5 3之輸 制。 .31的移 ί,由微小 應於1個 的相對移 定,而藉 ,對光照 在垂直之 終了時頭 貢部40移 以同等間 下以在互 鏡群4 2 2 在記憶單 而僅在一 沿著形成 地對各微 )1 0 2 4 行 10 200540577 (c〇1 u m η )的微小鏡,而自排頭列起僅照明1 9 2列份。 如圖1所示自控制部5對D M D 4 2被輸入重設脈衝(r e s e t p u 1 s e )時,各微小鏡依照被寫入在所對應之記憶單元的資 料以反射面之對角線作為軸以一定姿勢一齊傾斜。藉此, 被D M D 4 2所照射之光束因應於各微小鏡的傾斜方向而被反 射,而對光照射領域之光照射實施0 Ν / 0 F F。亦即,當在記 憶單元寫入表示有 0Ν的資料之微小鏡而接收到重設脈衝 時,入射至該微小鏡的光則朝可變焦距透鏡 4 3 7而被反 射,並在所對應之光照射領域被照射光(微小光束)。又, 微小鏡在0 F F狀態時,微小鏡將所入射的光對可變焦距透 鏡4 3 7不同的既定位置作反射,而使所對應之光照射領域 成為不能導光之狀態。200540577 The sensor 4 5 3 is used. The light from LD 4 5 2 passes through the semi-transparent mirror cube light splitter 4 4 1. The variable focal length lens 4 4 2. Projects the scene and shines on the substrate 9 from the substrate. The light of 9 enters the reverse direction and the mirror 4 5 1 is reflected and detected by the sensor 4 5 3. The actuator 2 (actuat 0r) used in the AF sensor 4 4 3 a is fixed to the stage-moving machine side of the table-moving machine of the in-line motor, and is controlled by the control unit 5 Stage moving mechanism 3: The light irradiated field group (one small mirror irradiated light field) is irradiated with light from the mirror group, and the Y direction on the photoresist film is continuously moved in FIG. 1. That is, the light irradiation area group moves the substrate 9 which is opposed to the head 40, so that the light irradiation area group moves on the substrate 9. The head 40 is fixed to the moving body side of the head moving mechanism 32, and the main scanning direction (Y direction in FIG. 1) is intermittently moved in the sub scanning direction (X direction). That is, each time the main scanning section moving mechanism 32 moves the horse to the X direction at the start position of the next main scanning. Figure 2 shows DMD42. DMD42 is a small spatial light modulation device in which a plurality of micro mirrors (micr 〇- mirr 〇r) are arranged in a grid pattern on a silicon substrate 421 (illustrated by arranging M rows and N rows in two perpendicular directions). Corresponding to the data in which the micro-mirrors are written (mem ryce 1 1), each micro-mirror is tilted at an angle by the action of an electrostatic field. In addition, the light is incident on a surface that is at an angle of 45 degrees to the DMD42 perpendicular to the row direction at an incident angle of 24 degrees, and can be illuminated by a small mirror. DMD42 is actually used with 7 6 8 歹 | J (row 312XP / Invention Specification (Supplement) / 94-08 / 941122] 2 451 through the multi-lens 443 with a translucent 4 5 3 output. .31 的 移 ί It is determined by the relative displacement of one minute, and by the end, the head 40 is moved to the same level at the end of the vertical to the mutual mirror group 4 2 2 in the memory sheet and only one along the ground. For each micro) 10,204 rows of 10 200540577 (c0um η) micro mirrors, and only 192 rows are illuminated from the top row. As shown in FIG. 1, when reset pulses (resetpu 1 se) are input to the DMD 4 2 from the control unit 5, each micromirror uses the diagonal of the reflecting surface as an axis according to the data written in the corresponding memory unit. Tilt together in a certain posture. Thereby, the light beam irradiated by D M D 4 2 is reflected in accordance with the inclination direction of each micromirror, and the light irradiation in the light irradiation field is performed with 0 N / 0 F F. That is, when a reset pulse is received when a micro-mirror showing data of ON is written in the memory unit, the light incident on the micro-mirror is reflected toward the variable focal length lens 4 3 7 and is reflected in the corresponding light. The irradiation area is irradiated with light (small beam). In addition, when the micromirror is in the 0 F F state, the micromirror reflects the incident light to a predetermined position different from the variable focal length lens 4 3 7, so that the corresponding light irradiation area cannot be guided by light.

圖3表示在圖案描晝裝置1中之基板9上的光照射領域 6 1及描晝單位圖案胞(w r i t i n g c e 1 1 ) 6 2 0之圖。光照射領 域6 1為對頭部4 0被固定之領域,描晝單位圖案胞6 2 0為 相當於被固定在基板 9上的描畫控制之最小單位的領域 (例如,2 μ m四邊),藉頭部4 0對基板9相對的移動,光照 射領域6 1可在描晝單位圖案胞6 2 0上相對的移動。描畫單 位圖案胞6 2 0為藉以D M D 4 2之光照射領域6 1的中心位置 (正確為連續的移動途中之光照射領域 61的中心位置)作 為基準分割基板9上之領域的曝光領域。在圖3中,以二 點鏈線表示對應於D M D 4 2之各微小鏡的光被照射之格子狀 的光照射領域群,以實線表示在基板9上之描晝單位圖案 胞群。又,在圖3僅圖示描晝單位圖案胞6 2 0及光照射領 11 312ΧΡ/發明說明書(補件)/94-08/94112212FIG. 3 is a diagram showing a light irradiation area 61 and a daylight unit pattern cell (w r i t i n g c e 1 1) 6 2 0 on the substrate 9 in the pattern drawing device 1. The light irradiation area 61 is an area where the head 40 is fixed, and the daytime unit pattern cell 620 is an area equivalent to the minimum unit of the drawing control fixed on the substrate 9 (for example, 2 μm four sides). By the relative movement of the head 40 to the substrate 9, the light irradiation area 61 can be relatively moved on the tracing unit pattern cell 6 2 0. The drawing unit cell 6 2 0 is the center position of the light irradiation field 61 by D M D 4 2 (correctly the center position of the light irradiation field 61 in the middle of continuous movement) as the exposure area of the field on the reference division substrate 9. In FIG. 3, a two-dot chain line represents a grid-shaped light irradiation area group corresponding to the light of each micromirror corresponding to D M D 4 2, and a solid line represents a day-unit pattern cell group on the substrate 9. In FIG. 3, only the day unit pattern cell 6 2 0 and the light irradiation collar 11 312XP / Invention Specification (Supplement) / 94-08 / 94112212 are illustrated.

200540577 域6 1之一部份。 描畫單位圖案胞6 2 0在圖3中之X方向(副系 Y 方向(主掃描方向)各以同一節距(p i t c h )(以 畫節距」)P W被固定排列之矩形的曝光領域, 畫單位圖案胞資料(寫入在DM D42之資料)光的 射領域6 1的中央之描畫單位圖案胞6 2 0 (附加。 為中心而實施。D M D 4 2之各微小鏡的反射光所 射領域 6 1 對應於微小鏡的形狀而變成大致呈 域。如圖4所示,光照射領域6 1對應於D M D 4 2 對互相垂直的2方向以一定節距(以下稱為「照 以ΡI排列成Μ列Ν行,光照射領域61之排列 描方向傾斜而D M D 4 2被設成在頭部4 0内傾斜。 如圖3所示,對光照射領域群之主掃描方向 光照射領域群之2個排列方向中,對大致沿著 的方向(和主掃描方向所成角度較小的方向)在 2個光照射領域6 1中,副掃描方向(X方向)之 L 1和描晝單位圖案胞6 2 0的描晝節距P W (副掃 接之描晝單位圖案胞6 2 0的中心間距離)成為相 描方向(Υ方向)的中心間距離L 2成為描晝節距 而傾斜。以下之說明,大致沿著Υ方向之方向 稱為行方向,而大致沿著X方向之另一方向稱 在圖4中如附加平行斜線所示者,正確地沿著 排列之2個光照射領域6 1在行方向距離照射旬 倍,在列方向距離照射節距Ρ I。 312ΧΡ/發明說明書(補件)/94-08/94112212 Ρ*描方向)及 下,稱「描 依對應之描 照射以光照 降號6 2 1 )作 照射之光照 正方形之領 之微小鏡而 射節距」。) 方向對主掃 之傾斜,在 主掃描方向 互相隣接之 中心間距離 描方向所隣 丨同,且主掃 PW之4倍 在DMD42中 為列方向。 主掃描方向 5距Ρ I之4 12200540577 Part of domain 61. Draw a unit pattern cell 6 2 0 in the X direction (sub-system Y direction (main scanning direction) in Fig. 3, each with a fixed pitch (in order to draw the pitch)) PW rectangular exposure area, Unit pattern cell data (data written in DM D42) The center of the light emission area 6 1 is drawn. Unit pattern cell 6 2 0 (Additional. Implemented as a center. The reflected light of each micromirror of DMD 4 2 emits light. 6 1 corresponds to the shape of the micromirror and becomes approximately a domain. As shown in FIG. 4, the light irradiation area 6 1 corresponds to DMD 4 2 with a certain pitch in 2 directions perpendicular to each other (hereinafter referred to as “photos arranged in PI Column M, row N, the arrangement direction of the light irradiation area 61 is inclined and DMD 4 2 is set to be inclined within the head 40. As shown in FIG. 3, the main scanning direction of the light irradiation area group is 2 Among the two alignment directions, the direction of the general scanning direction (the direction that forms a small angle with the main scanning direction) in the two light irradiation areas 61, L 1 in the sub-scanning direction (X direction), and the unit of tracing day pattern 6 2 0 tracing pitch PW (Middle of the tracing diurnal unit pattern cell 6 2 0 Intercardiac distance) becomes the phase-tracing direction () direction), and the center distance L 2 becomes inclined as the tracing pitch. In the following description, the direction substantially along the Υ direction is called the row direction, and the other along the X direction is substantially One direction is called as shown by an additional parallel oblique line in FIG. 4, and it is correctly aligned along the two light irradiation fields 6 1 arranged in the row direction, and is irradiated by ten times the distance in the row direction, and the irradiation pitch PI is distanced in the column direction. (Supplement) / 94-08 / 94112212 (P * direction), and below, it is called "tracing according to the corresponding tracing and irradiating with the light drop 6 2 1) as the irradiating tiny mirror of the square collar and shooting pitch". ) The tilt of the direction to the main scan is the same as the distance between the centers adjacent to each other in the main scan direction, and 4 times the PW of the main scan is the column direction in DMD42. Main scanning direction

200540577 其次參照圖5說明圖案描晝裝置1對基板 實施圖案描畫時之動作。以下在說明圖案描 作中,對描晝單位圖案胞光照射領域群為在 副掃描方向移動。 首先,描晝開始時,朝對應描畫單位圖案 最初的光照射領域6 1之位置(例如,圖3中 領域6 1的中央附加符號6 2 1之描晝單位圖] 位圖案胞資料被自控制部5發送至所對應之 小鏡之記憶元(步驟 S 1 1 )。其次,開始光照 掃描(步驟 S 1 2 ),對描晝單位圖案胞群光照 描晝開始位置時(步驟S 1 3 ),控制部5則藉 衝至 DMD4 2,而各微小鏡變成因應於記憶 勢,而對最初的描晝單位圖案胞6 2 1實施曝 又,正確者為,上述曝光是指控制光照射的 作,其雖然包含未照射光之情形,但是在以 有關曝光之控制僅稱為「曝光」。 被發送重設脈衝後,立刻發送對應於次一 案胞 6 2 0 (在本實施形態為在圖 3中之各描 6 2 1之(-Y )側僅離開4描晝節距之描晝單位 描晝單位圖案胞資料至各微小鏡之記憶元, 元寫入資料(步驟S 1 6 )。重設脈衝對D M D 4 2 和工作台移動機構3 1使工作台2在向主掃描 的動作同步實施,自第1次重設脈衝起描晝 對主掃描方向僅移動描畫節距Ρ的4倍距離 312XP/發明說明書(補件)/94-08/94112212 9上的光阻膜 晝裝置1之動 主掃描方向及 胞6 2 0之中之 位於各光照射 营胞)的描晝單 D M D 4 2的各微 射領域群之主 射領域群到達 由發送重設脈 元的資料之姿 fc (步驟 S 1 4 )。 0N/0FF之動 下之說明中, 個描晝單位圖 晝單位圖案胞 圖案胞6 2 2 )之 而實施對記憶 之發送為,在 方向連續移動 單位圖案胞群 之時點而下一 13 200540577 個重設脈衝對D M D 4 2發送(步驟S 1 7、S 1 4 ),各微小鏡則變 成隨從描晝單位圖案胞資料的姿勢。因此,最初的重設脈 衝後對各光照射領域之光照射的 0 N / 0 F F狀態則被維持在 描畫單位圖案胞群於描晝節距的4倍距離之間移動。 控制部 5藉工作台移動機構 3 1和光照射領域群的掃描 同步對光照射領域群各別控制光照射之 0 N / 0 F F而反覆以 上的曝光時,在第1 8次的重設脈衝(包含最初之重設脈衝) 以最初實施曝光之描晝單位圖案胞 6 2 1為中心而實施第2 次曝光。在第 1 8次重設脈衝之正前的狀態(亦即,第 17 次重設脈衝後之狀態),自最初被實施曝光之描晝單位圖案 胞朝(-Y )方向以各別並列1 7個描晝單位圖案胞(包含最初 之描晝單位圖案胞)為中心而成僅實施1次曝光之階段。關 於上述描晝動作,茲參照圖6至圖9詳細說明之。200540577 Next, the operation of the pattern drawing device 1 when performing pattern drawing on a substrate will be described with reference to FIG. 5. In the following description of the pattern drawing, the light irradiation area group of the daylight unit pattern cell is moved in the sub-scanning direction. First, at the beginning of the day, the light corresponding to the initial drawing of the unit pattern is irradiated to the area 61 (for example, the daytime unit map with the central symbol 6 2 1 in the area 61 in FIG. 3). The bit pattern cell data is self-controlled. The unit 5 sends to the corresponding memory element of the small mirror (step S 1 1). Secondly, the light scanning is started (step S 1 2), and when the daylight scanning unit pattern cell group is illuminated, the daylight scanning start position (step S 1 3) The control unit 5 then rushes to DMD4 2, and each micromirror becomes exposed to the memory potential, and exposes the original daylight unit pattern cell 6 2 1. The correct one is that the above-mentioned exposure refers to the action of controlling light irradiation. Although it includes the case where the light is not irradiated, it is only called "exposure" in the control of exposure. After the reset pulse is sent, it corresponds to the next case cell 6 2 0 (in this embodiment, it is shown in the figure). The (-Y) side of each of the strokes 6 2 1 in 3 is only separated from the stroke unit of 4 strokes of the day pitch to trace the data of the day unit patterns to the memory cells of each micromirror, and the data is written into the data (step S 1 6). Reset pulse to DMD 4 2 and table moving mechanism 3 1 The main scanning action is implemented synchronously. Since the first reset pulse, the tracer has moved only 4 times the pitch P in the main scanning direction. 312XP / Invention Manual (Supplement) / 94-08 / 94112212 9 Photoresist The main scanning field direction of the membrane day device 1 and the light irradiation cells in the cell 6 2 0) are located in each of the micro-radiation field groups of the tracing single DMD 4 2 and arrive by sending the reset pulse. The position fc of the data (step S 1 4). In the description under the action of 0N / 0FF, the sending of the memory is performed by drawing the day unit map, the day unit pattern, the cell pattern, and the cell 6 2 2). At the point of the pattern cell group, the next 13 200540577 reset pulses are sent to DMD 4 2 (steps S 1 7 and S 1 4), and each micromirror becomes a posture that follows the pattern cell data of the unit of the day. Therefore, the 0 N / 0 F F state of the light irradiated to each light irradiation area after the initial reset pulse is maintained to move between the drawing unit pattern cell group and the distance of 4 times the drawing day pitch. When the control unit 5 controls the 0 N / 0 FF of the light irradiation to the light irradiation field group by synchronizing with the scanning of the light irradiation field group 31 and the scanning of the light irradiation field group, the reset pulse is repeated at the eighteenth time ( Including the first reset pulse) The second exposure is performed centering on the daylight unit pattern cell 6 2 1 where the first exposure is performed. In the state immediately before the 18th reset pulse (that is, the state after the 17th reset pulse), the day-by-day unit pattern cells exposed from the first exposure are juxtaposed in a (-Y) direction by 1 There are 7 astronomical unit pattern cells (including the first astronomical unit pattern cell) as the center, and only one exposure is performed. The above-mentioned day-to-day operation will be described in detail with reference to FIGS. 6 to 9.

圖6表示描晝單位圖案胞群和光照射領域群之圖,以塗 黑之描晝單位圖案胞 6 2 0 (附加符號 6 2 a )作為中心在最初 之重設脈衝時實施曝光。圖6中,在對描畫單位圖案胞6 2 a 位於(+ Y )側的光照射領域6 1,亦即,在行方向4照射節距 且僅在列方向1照射間距互相分離之複數個的光照射領域 6 1則附加平行斜線,從(-Y )側之順序被附力口 6 1 a、6 1 b、 61c、 61d、 61eo 以下之說明為在重設脈衝時位於光照射領域6 1 a〜6 1 e的 中央之描晝單位圖案胞被附加符號 6 2 a〜6 2 e。又,為了輔 助理解起見,使用座標表現最初的曝光時位於光照射領域 6 1 a的中心之描晝單位圖案胞6 2 a的位置以C ( 0,0 )表示, 14 312XP/發明說明書(補件)/94-08/94112212 200540577 .)表示隣接在描畫單位圖案胞6 2 a之(-Y )側的 案胞之位置。又,光照射領域6 1 a〜6 1 e之位置 行方向的座標表現而各自以R ( 0,0 )、R ( 1 , 4 )、 (3,12)" R ( 4,1 6 )來表示。此些座標表現在 當地附力π之。Fig. 6 is a diagram showing a daylight unit pattern cell group and a light irradiation field group. The blackened daylight unit pattern cell 6 2 0 (symbol 6 2 a) is used as the center to perform exposure during the initial reset pulse. In FIG. 6, in the light irradiation area 61 of the drawing unit pattern cell 6 2 a located on the (+ Y) side, that is, a plurality of light irradiation pitches in the row direction 4 and separation distances in the column direction 1 only. The light irradiation area 6 1 is attached with a parallel oblique line, and is sequentially attached from the (-Y) side to the opening 6 1 a, 6 1 b, 61c, 61d, 61eo. The following description is located in the light irradiation area 6 1 when the pulse is reset. The daytime unit pattern cells in the center of a to 6 1 e are assigned the symbols 6 2 a to 6 2 e. In addition, for the sake of understanding, the position of the daytime unit pattern cell 6 2 a located at the center of the light irradiation field 6 1 a at the time of the initial exposure is expressed using coordinates (C (0,0)). 14 312XP / Invention Specification ( (Supplement) / 94-08 / 94112212 200540577.) Indicates the position of the case cell adjacent to the (-Y) side of the drawing unit pattern cell 6 2 a. In addition, the coordinates of the position in the row direction of the light irradiation area 6 1 a to 6 1 e are represented by R (0,0), R (1, 4), (3,12) " R (4,1 6) To represent. These coordinates are represented by the local auxiliary force π.

而以c ( ο,] 描畫單位圖 也使用列及 R ( 2, 8 ) 、 R 說明中被適 圖7表不 單位圖案胞 後,光照射 倍距離之間 ON 或 OFF ), 單位圖案胞 距的 4倍距 實施曝光。 側的描晝單 域 6 1 a實方 • 62a(C( 0, 0 胞 62b(C ( 0 施曝光。此 距離時在光 僅離開3描 曝光。 - 圖9表示 狀態的圖。 晝單位圖案 第2次的重設脈衝被發送1彳D M D 4 2時點之描畫 群和光照射領域群之圖。在第1次的重設脈衝 領域群對描畫單位圖案胞群移動描晝節距的 4 ,對各光照射領域被維持曝光狀態(光照射之 而在第2次的重設脈衝之時點,自最初的描畫 6 2 a ( C ( 0,0 ))起在(-Y )方向以僅離開描晝節 離之描晝單位圖案胞6 2 a ( C ( 0,4 ))為中心而 圖8表示第6次的重設脈衝時之情況,以(-Y ) 位圖案胞6 2 a ( C ( 0,2 0 ))為中心而對光照射領 色曝光,同時,自最(+ Y )側之描畫單位圖案胞 ))以僅離開3描畫節距(-Y )側的描畫單位圖案 ,3 ))為中心對光照射領域6 1 b ( R ( 1,4 ))亦實 後,光照射領域群在每次移動描畫節距的4倍 照射領域6 1 b中自一個描畫單位圖案胞6 2 a以 晝節距(-Y )側之描畫單位圖案胞為中心而實施 第1 8次的重設脈衝剛被發送到 D M D 4 2之後之 如圖9所示,光照射領域群對(-Υ )方向和對描 胞群相對的移動時,藉最(-Υ )側的光照射領域 15 3 ] 2ΧΡ/發明說明書(補件)/94-08/941 ] 2212 200540577When drawing the unit diagram with c (ο,], the columns and R (2, 8) and R are used as shown in Figure 7. After the unit pattern cells are shown in FIG. 7, the light irradiation times are ON or OFF. The unit pattern cell distance is 4 times the distance of exposure. The single day field of the side is 6 1 a square • 62a (C (0, 0 cell 62b (C (0 exposure). At this distance, the light leaves only 3 exposures.-Figure 9 shows the state. Day unit pattern The second reset pulse is sent 1 彳 DMD 4 at 2 o'clock, the drawing group and the light irradiation field group. In the first reset pulse field group, the unit pattern cell group is moved to trace the day pitch of 4, and Each light irradiation area is maintained in an exposure state (at the time of the second reset pulse at the time of light irradiation, from the initial drawing 6 2 a (C (0,0)) in the (-Y) direction so as to leave only the drawing The description of the diurnal diurnal unit pattern cell 6 2 a (C (0,4)) is the center, and FIG. 8 shows the case of the sixth reset pulse, with the (-Y) bit pattern cell 6 2 a (C (0, 2 0)) as the center to irradiate the light with the collar color exposure, and at the same time, the drawing unit pattern from the most (+ Y) side drawing unit pattern)) is drawn only 3 away from the drawing unit (-Y) side of the drawing unit pattern, 3)) After the light irradiation area 6 1 b (R (1, 4)) is also taken as the center, the light irradiation area group draws a unit pattern cell from the irradiation area 6 1 b at each time the drawing pitch is 4 times. 6 2 a As shown in FIG. 9 after the eighteenth reset pulse is performed centering on the drawing unit pattern cell on the day pitch (-Y) side, as shown in FIG. 9, the light irradiation field group pair (-Υ) Direction and relative movement of the tracing cell group, irradiate the field with the light at the most (-Υ) side 15 3] 2XP / Invention Specification (Supplement) / 94-08 / 941] 2212 200540577

6 1 a而成為曝光的中心之複數個描畫單位圖案胞6 2 a之間 的描晝單位圖案胞作為中心而藉光照射領域6 1 b〜6 1 d實施 曝光。結果,如注視圖9中之描畫單位圖案胞群的最(-X ) 側之行的(+ Y )側之部份時,藉光照射領域6 1 a、6 1 d、6 1 c、 61b而實施曝光之4個描晝單位圖案胞62a、62d、62c、62d 則變成朝(-Y )方向順序排列,在第 1 8次之重設脈衝之正 前,成為自最初被實施曝光的描晝單位圖案胞6 2 a ( C( 0,0 )) 起朝(_ Y )方向排列的1 7個描晝單位圖案胞(包含最初之描 晝單位圖案胞)之各個為中心而僅實施1次曝光之階段。 又,和第 1 8次的重設脈衝同步而最(+ Y )側的描畫單位 圖案胞 6 2 a ( C ( 0,0 ))作為中心而向光照射領域 6 1 e ( R (4,1 6 ))實施曝光。以後,和重置脈衝同步,藉存在於比 圖9所示之光照射領域更(+ Y )側的光照射領域,而以同一 之描晝單位圖案胞作為中心順序實施第2次的曝光,進一 步,對同一的描晝單位圖案胞也實施第3次以後的曝光。 重複曝光的周期則成為第1 7次重置脈衝。 如使用座標表現說明上述重複曝光之情況時,在重設脈 衝時C ( 0,4 K )( K為0以上的整數)之描晝單位圖案胞6 2 0 為位於 R ( m,4 m ) ( m = 0、4、8、1 2 · · · · 4 4 )的光照射領域 6 1之中心,C( 0,4 K + 1 )之描晝單位圖案胞6 2 0則位在(m,4 m ) (m = 3、7、1 1、1 5 · · · · 4 7 )的光照射領域 6 1之中心,C (0,4K + 2)的描晝單位圖案胞620為位在R( m,4m)(m = 2、 6、1 0、1 4 · · · · 4 6 )的光照射領域6 1之中心,C ( 0,4 K + 3 ) 的描晝單位圖案胞6 2 0則位在R ( m,4 m ) ( m = 1、5、9、1 3 · 16 312XP/發明說明書(補件)/94-08/94112212 200540577 •••45)的光照射領域61之中心。6 1 a is a plurality of drawing unit pattern cells which become the center of exposure. Daylight unit pattern cells between 6 2 a are used as the center, and exposure is performed by light irradiating the area 6 1 b to 6 1 d. As a result, when the part on the (+ X) side of the most (-X) side row of the unit pattern cell group is drawn as shown in View 9, the area 6 1 a, 6 1 d, 6 1 c, 61b is irradiated with light. On the other hand, the four daytime unit pattern cells 62a, 62d, 62c, and 62d that are exposed are sequentially arranged in the direction of (-Y), and they are the scans that have been exposed since the 18th reset pulse. Day unit pattern cells 6 2 a (C (0,0)) from the 17 drawing unit pattern cells (including the first day pattern unit cells) arranged in the direction of (_ Y). Only 1 is implemented. Stage of exposure. In addition, in synchronization with the 18th reset pulse, the drawing unit pattern cell 6 2 a (C (0,0)) on the most (+ Y) side is used as the center to irradiate the area 6 1 e (R (4, 1 6)) Perform exposure. Later, in synchronization with the reset pulse, the second exposure is performed sequentially with the same daylight unit pattern cell as the center by using a light irradiation area that is more on the (+ Y) side than the light irradiation area shown in FIG. 9, Furthermore, the third and subsequent exposures are performed on the same daylight unit pattern cells. The cycle of repeated exposure becomes the 17th reset pulse. For example, when using the coordinate expression to explain the above-mentioned repeated exposure, when resetting the pulse, C (0,4 K) (where K is an integer of 0 or more), the unit of drawing day unit 6 2 0 is located at R (m, 4 m) (m = 0, 4, 8, 1 2 · · · · 4 4) irradiates the center of the field 6 1, and C (0,4 K + 1) traces the unit pattern cell 6 2 0 at (m , 4 m) (m = 3, 7, 1 1, 1 5 · · · · 4 7) irradiates the center of the field 6 1, and the C (0,4K + 2) tracing unit pattern cell 620 is located at R (m, 4m) (m = 2, 6, 1 0, 1 4 · · · · 4 6) irradiates the center of the field 6 1, and C (0, 4 K + 3) traces the unit pattern cell 6 2 0 is in the light irradiation field of R (m, 4 m) (m = 1, 5, 9, 1 3 · 16 312XP / Invention Specification (Supplement) / 94-08 / 94112212 200540577 ••• 45) 61 Center.

藉反覆以上的動作,而在圖案描畫裝置1使用具有Μ列 之微小鏡(m i c r 〇 m i r r 〇 r )的D M D 4 2時,藉工作台移動機構 3 1對基板9上的各描晝單位圖案胞6 2 0使複數的光照射領 域6 1相對的通過則可作重複(Μ / 1 6 )次之曝光動作,而以各 描畫單位圖案胞6 2 0作為中心控制(Μ / 1 6 )等級(g r a d a t i ο η ) 的光量。實際上M為1 9 2,而可實施1 2次的重複曝光的控 制。如圖3所示,1個光照射領域61可覆蓋複數個描晝單 位圖案胞6 2 0之大小,進一步,由於在2個重設脈衝間一 面維持曝光狀態一面描晝單位圖案胞群會在描晝節距的 4 倍距離移動,因此,其不能正確實施(Μ / 1 6 )等級之光照射。 但是,被描晝的圖案的最小線寬(亦即,圖案分解能力)為 比線寬的最小控制單位(亦即,線寬精確度)更大許多,由 於對連續存在的幾個描晝單位圖案胞6 2 0實施光照射,而 對連續存在之其他幾個描晝單位圖案胞6 2 0則不實施光照 射之動作,因此,實用上不會發生問題。例如,圖案中之 線寬或所隣接的線之間的間隔寬度成為2 0 μ m,而線寬或空 間的寬度之最小控制單位則為2 μ m。 當光照射領域群之1次的主掃描之間所實施之描晝終了 時(圖5 ··步驟S 1 5 ),則停止主掃描(步驟S1 6 )。又,在實 施其他的主掃描時則藉頭部移動機構 3 2而光照射領域群 在 X方向被副掃描而返回步驟S 1 1,其藉工作台移動機構 31使工作台2朝逆方向((-Y)方向)移動而一方面實施次 一個描晝。 17 312XP/發明說明書(補件)/94-08/94112212By repeating the above operations, when the pattern drawing device 1 uses DMD 4 2 with micromirrors (micr 0mirr 0r) of M rows, the table moving mechanism 3 1 is used to trace each pattern unit on the substrate 9 6 2 0 Passing a plurality of light irradiated areas 61 1 through can make repeated (M / 16) exposure operations, and each drawing unit pattern cell 6 2 0 as the central control (M / 16) level ( gradati ο η). Actually, M is 192, and the control of the repeated exposure can be performed 12 times. As shown in FIG. 3, one light irradiation area 61 can cover a plurality of daylight unit pattern cells 6 2 0. Further, since the exposure state is maintained between the two reset pulses, the group of daylight unit pattern cells will be in The tracing pitch moves at a distance of 4 times, so it cannot correctly perform (M / 16) level light irradiation. However, the minimum line width of the traced pattern (that is, the pattern resolution ability) is much larger than the minimum control unit of the line width (that is, the line width accuracy). The pattern cell 6 2 0 is irradiated with light, and the pattern cells 6 2 0 that are continuously present are not irradiated with light. Therefore, practically no problem occurs. For example, the line width or the space between adjacent lines in a pattern becomes 20 μm, and the minimum control unit for line width or space width is 2 μm. When the scan performed between the main scans of the light irradiation field group once is over (Fig. 5 ··· Step S 1 5), the main scan is stopped (Step S 1 6). When performing another main scan, the head movement mechanism 32 is used, and the light irradiation field group is sub-scanned in the X direction, and the process returns to step S1. The table movement mechanism 31 is used to make the table 2 in the reverse direction ( (-Y) direction) while performing one trace at a time. 17 312XP / Invention Manual (Supplement) / 94-08 / 94112212

200540577 如上,圖案描畫裝置 1,因為重設脈衝間使描畫單 案胞群僅移動描晝節距之4倍的距離,因此,其比在 脈衝間只將描畫單位圖案胞群移動描晝節距之情形, 4 倍的速度實施描畫(以下將此一動作稱為「4倍速 晝」。)。藉此,其可一面控制圖案之線寬而一面高速 實施描晝。 但是如圖9所示,為了使僅分開描晝節距4倍的2 晝單位圖案胞 6 2 a (塗黑之部份)之間的各描晝單位圖 作為中心之光照射領域6 1 b〜6 1 d而可更確實地實施曝 換言之,為了以各描晝單位圖案胞作為中心而實施曝 光照射領域 61間的描晝節距數和重設脈衝間描晝單 案胞群移動距離之描晝節距數必須互為素數(雙方之 公約數為1 )。在圖9之情形,光照射領域61間之描 距數為1 7,在重設脈衝間描畫單位圖案胞群移動距離 晝節距數為4,雙方互為素數。又,由於光照射領域i 之描晝節距數為1 7,因此,光照射領域6 1之列數充 時,可任意地變更描晝速度為2倍數至1 6倍數之間< 圖1 0至圖1 3表示光照射領域群之傾斜和光照射領 的大小關係之圖。圖1 0表示沿著掃描方向排列之2個 射領域6 1,在行方向離開照射節距PI的2倍,在列 只離開照射節距PI之狀態,圖1 1、1 2、1 3表示沿著 方向所排列之2個光照射領域6 1,在行方向各自分開 節距PI的3、4、5倍,在列方向僅分開照射節距PI 態。在圖1 0至圖1 3,光照射領域6 1及描晝單位圖案胞 312XP/發明說明書(補件)/94-08/94112212 位圖 重設 可以 度描 度地 個描 案胞 光, 光, 位圖 最大 晝節 之描 61間 份大 ) 域61 光照 方向 掃描 照射 之狀 620 18 200540577 為正方形,在光照射領域群之2個排列方向中之大致沿著 掃描方向之方向(行方向)互相所隣接之光照射領域 61 中,對在掃描方向垂直之中心間的距離和描畫節距PW為相 等,而對掃描方向之中心間的距離則成為描畫節距 PW之 2、3、4、5倍(以下稱為「a倍」。但是,a為2以上之整數)。200540577 As above, the pattern drawing device 1 resets the drawing unit cell so that the drawing unit cell moves only 4 times the distance of the daytime pitch. Therefore, the pattern drawing device 1 moves only the drawing unit pattern cell group between the pulses and moves the daytime pitch. In this case, drawing is performed at a speed of 4 times (hereinafter, this action is referred to as "4 times speed day".). Thereby, it is possible to perform the tracing at a high speed while controlling the line width of the pattern. However, as shown in FIG. 9, in order to separate the drawing unit maps between 2 day unit pattern cells 6 2 a (blackened part) that are only 4 times the day pitch, the light irradiation area 6 1 b is the center. ~ 6 1 d can be carried out more reliably. In other words, in order to perform the centering of each patterning unit pattern cell as the center, the number of tracing pitches in the 61 exposure areas and the moving distance of the resetting pulse tracing unit group are reset. The number of day-to-day pitches must be prime numbers (the common divisor of the two parties is 1). In the case of FIG. 9, the number of traces between 61 areas of light irradiation is 17 and the unit pattern cell group moving distance is drawn between reset pulses. The number of day-to-day pitches is 4, and both sides are prime numbers. In addition, since the number of tracing pitches in the light irradiation area i is 17, the number of columns in the light irradiating area 61 can be changed, and the tracing speed can be arbitrarily changed between 2 times and 16 times < FIG. 1 0 to 13 are diagrams showing the relationship between the tilt of the light irradiation field group and the size of the light irradiation collar. Fig. 10 shows the two shot areas 61 arranged along the scanning direction, leaving the irradiation pitch PI twice in the row direction and leaving only the irradiation pitch PI in the column. Fig. 1, 1, 2, 1 3 shows The two light irradiation areas 61 arranged along the direction are separated by 3, 4, and 5 times the pitch PI in the row direction, and are irradiated only by the pitch PI state in the column direction. In Fig. 10 to Fig. 13, the light irradiation area 61 and the daylight unit pattern cell 312XP / Invention Specification (Supplement) / 94-08 / 94112212 reset the bitmap to describe each cell light, light. , The largest day of the bitmap is 61, and the area is 61. The scanning direction of the illumination direction is 620 18 200540577. It is a square, and it is roughly along the scanning direction (row direction) in the two alignment directions of the light irradiation field group. In the adjacent light irradiation areas 61, the distance between the centers perpendicular to the scanning direction and the drawing pitch PW are equal, and the distance between the centers to the scanning direction is equal to 2, 3, 4, or 5 times (hereinafter referred to as "a times". However, a is an integer of 2 or more).

一邊,在圖1 0至圖1 3中,正確沿著掃描方向並列之2 個光照射領域6 1間之距離則成為描畫節距P W之5、1 0、 17、26倍(一般為(a2 + l)倍)。因此,圖10至圖13中, 在各個5、1 0、1 7、2 6之間以互為素數之正的整倍數之速 度而實施描晝,圖1 0之情形為2、3、4倍數之描晝,在圖 1 1之情形為3、5、7、9倍數之描晝,圖1 2之情形為2、3、 4、5 · · · ·倍數之描晝,圖1 3之情形為以3、5、7、9 · · ·之 倍數而可描畫。亦即,(a 2 +1 )和η互為素數時,控制部5 在使光照射領域群相對的僅移動描晝節距P W之η倍的距離 時則可適當地作一次光照射的 0 Ν / 0 F F控制而實施高解像 度之η倍速描晝。 此時,在每(a 2 +1 )次的重設脈衝,各描晝單位圖案胞 6 2 0使其通過在行方向照射節距P I之(a X η )倍,在列方向 照射節距 ΡI之 η倍的分離之各別的光照射領域 61之中 心。因此,光照射領域群為Μ列,亦即,被配列在大致沿 者主掃描方向的光照射領域6 1的數為Μ時,如Μ為(axn) 的整數倍時,在光照射領域群相對的通過描晝單位圖案胞 群時,則成為實施相等於在行方向並列之各描晝單位圖案 胞6 2 0之次數之重複曝光(但是,光照射領域群的(± X )側 19 312XP/發明說明書(補件)/94-08/94112212 200540577 之端部通過之描畫單位圖案胞除外。)。 又,超過倍數而實施描晝時η成為3以上的整數,而向 基板上的光阻膜描晝時,如考慮材料特性或光照射領域6 1 的大小等時較佳的η值可舉出4。On the other hand, in Figure 10 to Figure 13, the distance between the two light irradiation areas 61, which are juxtaposed along the scanning direction, becomes 5, 10, 17, 26 times the drawing pitch PW (generally (a2 + l) times). Therefore, in FIG. 10 to FIG. 13, the tracing is performed between 5, 10, 17, 7, and 6 at a speed that is an integral multiple of a prime number that is mutually positive. The situation in FIG. 10 is 2, 3, Days with multiples of 4 are in the case of Figure 11 as multiples of 3, 5, 7, 9 times, and cases in Figure 12 are 2, 3, 4, 5 · · · · Figures with multiple times are shown in Figure 1 3 It can be drawn in multiples of 3, 5, 7, 9 ···. That is, when (a 2 +1) and η are prime numbers to each other, the control unit 5 can appropriately perform a single light irradiation when the light irradiation field group is relatively moved by a distance of η times the tracing pitch PW. 0 Ν / 0 FF control to perform high-resolution η-speed tracing. At this time, at each (a 2 +1) reset pulse, each day unit pattern cell 6 2 0 is made to pass (a X η) times the pitch PI in the row direction and the pitch in the column direction. The center of the separate light irradiated field 61 that is n times the PI. Therefore, the light irradiation area group is an M column, that is, when the number of light irradiation areas 61 arranged substantially along the main scanning direction of the person is M, for example, when M is an integer multiple of (axn), the light irradiation area group is When the cell group passing the daylight unit pattern is passed, the exposure is repeated as many times as the number of daytime unit cell cells that are juxtaposed in the row direction is 6 2 0 (however, the (± X) side of the light irradiation field group is 19 312XP. / Invention specification (Supplement) / 94-08 / 94112212 200540577 Except for the drawing unit pattern cell passing through the end.). In addition, in the case where the number of times of scanning is exceeded when multiples are performed, η becomes an integer of 3 or more. When daylighting is performed on a photoresist film on a substrate, a suitable value of η can be given in consideration of material characteristics and the size of the light irradiation area 6 1 4.

又,實施η倍速描晝時,重複曝光次數成為(M /( a X η ))(捨 去小數點以下),相對的,描晝單位圖案胞群在各個描畫節 距P W移動時,重設脈衝發送到D M D 4 2以1倍速描畫時則可 (M/a)次重複曝光。實際上,由於大體上其不須要(M/a)次 重複曝光,因此,η倍速曝光可說是具有 DMD42而儘量利 用所具有的多數個微小鏡以最小限必要的重複曝光次數而 可向速地實施描晝之技術。 但是,如圖1 0至圖1 3所示,使自光照射領域群的行方 向之主掃描方向的傾斜構成愈小時,對描晝單位圖案胞 6 2 0則光照射領域6 1會相對的變大。相反的,光照射領域 6 1的大小一定時,可將自光照射領域群的行方向之主掃描 方向起的傾斜構成更小而設定較小的描晝單位圖案胞 6 2 0。光照射領域 6 1之一邊的長度則變成描畫節距PW之 (a 2 + 1 )的平方根倍,例如,a為4而實施4倍速描晝時 在重設脈衝間對1個光照射領域61實施光照射時,在圖 1 4中的線6 3 1、6 3 2上之累積光量則成線6 4 1、6 4 2所示之 分佈。亦即,對描畫單位圖案胞6 2 0的大小以廣範圍的光 照射,特別是在主掃描方向以廣範圍之光照射。又,藉光 照射之0 N / 0 F F則如圖1 4所示之光量分佈的疊合而變成在 基板9上之感光材料蓄積的光能量之分佈,藉此一分佈則 20 312XP/發明說明書(補件)/94-08/94112212Moreover, when performing η double-speed tracing day, the number of repeated exposures is (M / (a X η)) (rounded off the decimal point). In contrast, when the tracing unit pattern cell group moves at each drawing pitch PW, it is reset. When the pulse is sent to DMD 4 2 to draw at 1x speed, the exposure can be repeated (M / a) times. In fact, since it generally does not require (M / a) repeated exposures, the η-speed exposure can be said to have DMD42 and use the majority of the micro mirrors to minimize the number of necessary repeated exposures to speed up To implement the technique of tracing the day. However, as shown in FIG. 10 to FIG. 13, the smaller the inclination of the main scanning direction in the row direction of the light irradiation field group is, the smaller the light irradiation field 6 1 is when the unit pattern cell 6 2 0 is drawn. Get bigger. Conversely, when the size of the light irradiation area 61 is constant, the tilt from the main scanning direction in the row direction of the light irradiation area group can be made smaller and a smaller unit of daylight unit 620 can be set. The length of one side of the light irradiation area 6 1 becomes the square root multiple of (a 2 + 1) of the drawing pitch PW. For example, when a is 4 and the speed is 4 times, one light irradiation area is reset between reset pulses. When light irradiation is performed, the accumulated light amount on the lines 6 3 1 and 6 3 2 in FIG. 14 becomes the distribution shown by the lines 6 4 1 and 6 4 2. That is, the size of the drawing unit pattern cell 6 2 0 is irradiated with a wide range of light, and particularly the main scanning direction is irradiated with a wide range of light. In addition, the 0 N / 0 FF irradiated by light is superimposed on the light amount distribution shown in FIG. 14 and becomes a distribution of light energy accumulated on the photosensitive material on the substrate 9. With this, a distribution is 20 312XP / Invention Specification (Supplement) / 94-08 / 94112212

200540577 可實施圖案之描畫。 圖1 5 A表示光照射領域群在每1描畫節距移動時對 射領域6 1之光照射交互予以0 N及0 F F時在主掃描方 累積光量之圖。圖1 5 B〜圖1 5 G表示各個光照射領域群 個描畫節距的2、3、4、5、6、8倍移動時交互以0N及 作光照射時之累積光量。0N或OFF的距離愈長時,功 在副掃描方向描晝延伸線時其線寬則愈大,而可看出 光量分佈之頂點變高,而凹谷則變深。又,由於感光 為被照射一定量以上的光而感光,因此,即使藉控制 (光功率)也可控制圖案之線寬。 但是,感光材料係必須照射充份的光,在此情況下 一方面調整來自光源的光之強度,同時,藉調整光照 0 N及0 F F的時機而描晝既定的線寬之圖案。例如,在 排版器(image setter)中在銀鹽(siliver salt)等的 材料上描晝圖案時,藉著使感光材料感光而達成圖案 之目的,因此只要在感光材料上照射感光必要之最小 光即足。相對的,在半導體等之基板上的光阻劑上描 案時,為了在後工程之蝕刻時剝離光阻劑而不會過度 則必須照射使光阻劑感光以上之量的光。200540577 The drawing of patterns can be implemented. Fig. 15A is a graph showing the amount of light accumulated on the main scanning side when the light irradiation area group alternately applies 0 N and 0 F F to the light irradiation area 6 in the drawing area every 1 drawing pitch movement. Figs. 15B to 15G show the cumulative light quantity when the light is irradiated at 2N, 3, 4, 5, 6, and 8 times when the drawing pitch of each light irradiation group is shifted. The longer the distance of 0N or OFF is, the larger the line width of the work is when the daytime extension line is drawn in the sub-scanning direction, and it can be seen that the apex of the light quantity distribution becomes higher and the valley becomes deeper. In addition, since the light is irradiated with light of a certain amount or more, the line width of the pattern can be controlled even by controlling (optical power). However, the photosensitive material must emit sufficient light. In this case, the intensity of the light from the light source is adjusted, and at the same time, the pattern of the predetermined line width is drawn by adjusting the timing of the illumination of 0 N and 0 F F. For example, when drawing a day pattern on a material such as silver salt in an image setter, the purpose of the pattern is achieved by sensitizing the photosensitive material. Therefore, as long as the photosensitive material is irradiated with the minimum light necessary for photosensitivity That is enough. In contrast, when patterning on a photoresist on a substrate such as a semiconductor, it is necessary to irradiate the photoresist with an amount of light that is more than the photoresist in order to peel off the photoresist during the post-process etching without causing excessive photoresist.

在此情況下,如圖1 6所示,藉使8描晝節距光照射 而使8描晝節距0 F F如此所得到之以細線7 1 1所表示 積光量之分佈賦予感光材料,即使可以界 (t h r e s h ο 1 d ) T Η作為界限以線寬W而可感光時,將光 提高以6描晝節距光照射0 Ν,而使1 0描晝節距0 F F 312XP/發明說明書(補件)/94-08/94112212 光照 向的 在每 OFF 即 , 累積 材料 光量 ,可 射之 影像 感光 描晝 限的 晝圖 除去 0N, 的累 [艮值 強度 時, 21In this case, as shown in FIG. 16, by illuminating 8 strokes of day pitch light and 8 strokes of day pitch 0 FF thus obtained, the distribution of the amount of accumulated light represented by the thin line 7 1 1 is given to the photosensitive material, even if When (thresh ο 1 d) T Η can be used as a limit to be sensitive with a line width of W, the light is increased to illuminate 0 Ν with 6 strokes of daytime light, and 10 strokes of daytime 0 FF 312XP / Invention Specification ( (Supplement) / 94-08 / 94112212 When the light direction is OFF every time, that is, the accumulated material light quantity, the image of the image that can be shot, and the daytime map of daylight limit are removed by 0N, [the value of the intensity, 21

200540577 所得到之以粗線 7 1 2 表示的累積光量之分佈賦予感 料,即可得到具有充份被光照射之線寬W的圖案。 此處,圖案描畫裝置1之情形為,利用如上述比描 位圖案胞6 2 0更大的光照射領域6 1,使分佈光量在主 方向及副掃描方向某程度廣佈。又,藉實施高速描畫 圖1 4所示光量分佈則在主掃描方向可更加延伸。被描 圖案的線寬充份大時,在主掃描方向之線寬雖可藉上 強度及0 N / 0 F F控制之組合而維持精確度,但可描晝之 線寬,亦即,解像度其比副掃描方向在主掃描方向則 避免會降低。 因此,圖案描晝裝置1被構成在描晝單位圖案胞群 動η描晝節距的途中使光源之L E D 4 1 1可瞬間熄燈之ί 實施L E D 4 1 1之0 Ν / 0 F F控制(亦即,調變)時,在圖5 之圖案描畫裝置1的動作中在步驟S 1 4和步驟S 1 5之 被實施圖17所示之步驟S21〜S23。在實施LED411之 時,以步驟 S1 4 使各微小鏡的姿勢更新後,立 L E D 4 1 1 (步驟 S 2 1 )點燈,當描畫單位圖案胞群僅移動 節距P W時(步驟S 2 2 ),則使L E D 4 1 1熄燈(步驟S 2 3 )。$ 在記憶元上寫入下一個描晝資料(步驟 S 1 6 ),當從前 重設脈衝使描晝單位圖案胞僅移動描晝節距P W之η倍 時(步驟S 1 7 ),則回至步驟S 1 4。 藉以上之動作,對光照射領域6 1之光照射自0 Ν至 為止之間,光照射領域群僅相對移動描畫節距PW,對 射領域 61的光照射被限制於重設脈衝的間’隔之 1 / η 312XP/發明說明書(補件)/94-08/941 ] 2212 光材 畫單 掃描 ,如 畫之 述光 最小 無法 僅移 £制。 所示 間可 調變 刻使 描畫 I後, 面的 距離 OFF 光照 。結 22 200540577 果,可實現一面將在主掃描方向光照射擴展抑制成和副掃 描方向相同程度而一面實施高速描晝。 當使用 L E D或L D作為光源時,以D M D 4 2之調變界限速 度的1 / 1 0以下的時間可0 Ν / 0 F F控制光源。因此,例如, 即使是8倍速描晝(η = 8 )也可一面抑制主掃描方向之解像 度之降低而一面容易實施描晝。在此情況下,由於在重設 脈衝間賦予感光材料之光能量減少至 1 / 8,因此,自光源 之光強度可被提高,而可被使用具有高感度之感光材料。200540577 The distribution of the accumulated light amount represented by the thick line 7 1 2 is given to the sensor, and a pattern having a line width W sufficiently illuminated by light can be obtained. Here, the case of the pattern drawing device 1 is to irradiate the area 61 with light larger than the pattern cell 6 2 0 as described above, so that the amount of distributed light is widely distributed in the main direction and the sub-scanning direction to some extent. In addition, by performing high-speed drawing, the light quantity distribution shown in FIG. 14 can be further extended in the main scanning direction. When the line width of the traced pattern is sufficiently large, although the line width in the main scanning direction can be maintained by the combination of intensity and 0 N / 0 FF control, the line width of the day can be traced, that is, the resolution is It is lower than the main scanning direction than the sub scanning direction. Therefore, the pattern tracer device 1 is configured to make the LED 4 1 1 of the light source instantaneously turn off the light while the pattern cell of the unit of the tracer moves η to trace the pitch. The LED 4 1 1 0 NR / 0 FF control (also That is, in the case of modulation, steps S21 to S23 shown in FIG. 17 are performed in steps S 1 4 and S 1 5 during the operation of the pattern drawing device 1 in FIG. 5. When the LED411 is implemented, after the postures of the micro mirrors are updated in step S1 4, the LED 4 1 1 (step S 2 1) is turned on, and when the drawing unit pattern cell group moves only by the pitch PW (step S 2 2 ), The LED 4 1 1 is turned off (step S 2 3). $ Write the next daylighting data on the memory cell (step S 1 6). When the pulse is reset previously to make the daylighting unit pattern cell move only η times the daylighting pitch PW (step S 1 7), it returns Go to step S 1 4. With the above actions, the light irradiation area 61 is irradiated with light from 0 Ν to so far, the light irradiation area group is relatively moved to draw the pitch PW, and the light irradiation area 61 is limited to the interval between reset pulses. Every 1 / η 312XP / Invention Specification (Supplement) / 94-08 / 941] 2212 Scanning of light painting picture, the light can not be moved only as described in the picture. The distance between the faces can be adjusted to adjust the distance of the surface after drawing I, and the light is off. As a result, it is possible to perform high-speed scanning while suppressing the spread of light irradiation in the main scanning direction to the same degree as that in the sub-scanning direction. When L E D or L D is used as the light source, the light source can be controlled by 0 Ν / 0 F F for a time below 1/10 of the modulation limit speed of D M D 4 2. Therefore, for example, even when it is 8 times the scanning speed (η = 8), it is possible to easily perform the scanning while suppressing the decrease in the resolution in the main scanning direction. In this case, since the light energy imparted to the photosensitive material between the reset pulses is reduced to 1/8, the light intensity from the light source can be increased, and a photosensitive material with high sensitivity can be used.

以上,雖然已說明本發明之實施形態,但本發明並不限 於上述實施形態,其可有各種的變形。 被設在圖案描晝裝置1之空間光調變裝置,並不限於上 述實施形態所使用之 DMD42,例如,也可使用液晶快門 (liquid crystal shutter)等之空間光調變裝置。又,也 可2次元排列作為光源之複數個發光二極管等,對應於發 光二極管群之光照射領域群的排列方向對掃描方向以成傾 φ 斜之狀態,而藉將各發光二極管之0 N / 0 F F控制成和光照射 領域的相對移動同步,如此實施圖案描晝亦可。又,在未 實施光源之 0 N / 0 F F控制時,使用超高壓水銀作為光源亦 可 。 在圖1 7所示之光源的0 N / 0 F F控制中,光源並不一定在 光照射領域群作 1描晝節距 PW移動之時點成為 OFF,例 • 如,在須要有充份之累積光量時,使在描晝節距 PW之 2 倍距離移動之時點才使其成為OFF亦可。亦即,對光照射 領域6 1之光的照射於0 N後,在光照射領域群之描晝節距 23 312XP/發明說明書(補件)/94_08/941 ] 22 ] 2 200540577 P W之η倍距離的相對移動終了前只要對光照射領域6 1的 光照射成為0 F F則0 F F之時機被適當地設定,如此亦可。 又,如藉光源以外的元件使得比空間光調變裝置之控制更 快的光照射成為OFF,如此亦可。 工作台2和頭部 4 0對主掃描方向及副掃描方向之相對 移動(亦即,基板9上之描晝單位圖案胞群和光照射領域群 之相對移動)僅藉工作台2或頭部4 0之任一者的移動而實As mentioned above, although the embodiment of this invention was described, this invention is not limited to the said embodiment, It can have various deformation | transformation. The spatial light modulation device provided in the pattern drawing device 1 is not limited to the DMD 42 used in the above embodiment. For example, a spatial light modulation device such as a liquid crystal shutter may be used. In addition, a plurality of light emitting diodes as a light source may be arranged in a two-dimensional array, corresponding to the arrangement direction of the light irradiation field group of the light emitting diode group is inclined to the scanning direction by φ, and the 0 N / The 0 FF control is synchronized with the relative movement in the light irradiation field, so that pattern drawing can be performed in this way. When 0 N / 0 F F control of the light source is not implemented, ultra-high pressure mercury may be used as the light source. In the 0 N / 0 FF control of the light source shown in Fig. 17, the light source does not necessarily turn off at the time when the day-to-day pitch PW moves in the light irradiation area group. For example, if sufficient accumulation is required In the case of light intensity, it may be turned off at the time when the tracing pitch is twice as long as the pitch PW. That is, after irradiating the light in the light irradiation field 61 with 0 N, the day-to-day pitch in the light irradiation field group is 23 312XP / Invention Specification (Supplement) / 94_08 / 941] 22] 2 200540577 η times the PW Before the relative movement of the distance is ended, as long as the light irradiation in the light irradiation area 61 becomes 0 FF, the timing of 0 FF is appropriately set, and this may be the case. It is also possible to use an element other than the light source to turn off the light irradiation faster than the control of the spatial light modulation device. The relative movement of the worktable 2 and the head 40 to the main scanning direction and the sub-scanning direction (that is, the relative movement of the tracing unit pattern cell group and the light irradiation field group on the substrate 9) are only borrowed from the worktable 2 or the head 4 Any move of 0 is true

行,如此亦可。 進一步,在上述實施形態中雖然未提及對位於光照射領 域群中之副掃描方向的端部之光照射領域 6 1 (例如,圖 4 中之(-X )側且(+ Y )側的光照射領域6 1 )的光照射控制, 但為了可簡單地實施控制,其也可不必對此等光照射領域 6 1實施光照射,又如一面考慮副掃描後之描晝而對此等光 照光照射領域6 1控制光照射,如此亦可。 雖然上面已詳細說明本發明之敘述,但以上之說明僅為 φ 例示性者其並非限制性者。因此,只要在不脫離本發明之 範圍,其可作多數的變形或態樣。 【圖式簡單說明】 圖1表示圖案描畫裝置之構成圖。 圖2表示DMD之圖。 圖3表示光照射領域及描晝單位圖案胞之圖。 • 圖4表示光照射領域群全體及描晝單位圖案胞群之圖。 ^ 圖5表示圖案描晝之流程圖。 圖6至圖9表示描晝途中之光照射領域及描畫單位圖案 24 312ΧΡ/發明說明書(補件)/94-08/94112212 200540577 胞之圖。 圖1 0至圖1 3表示光照射領域群之傾斜和光照射領域的 大小關係之圖。 圖14表示累積光量之圖。 圖1 5 A表示每1描晝節距之0 N / 0 F F的累積光量之圖。 圖1 5 B表示每2描晝節距之0 N / 0 F F的累積光量之圖。 圖1 5 C表示每3描晝節距之0 N / 0 F F的累積光量之圖。 圖15D表示每4描畫節距之0N/0FF的累積光量之圖。 圖1 5 E表示每5描晝節距之0 N / 0 F F的累積光量之圖。 圖1 5 F表示每6描晝節距之0 N / 0 F F的累積光量之圖。 圖1 5 G表示每8描晝節距之0 N / 0 F F的累積光量之圖。 圖1 6表示光強度在不同時之累積光量的圖。 圖1 7表示光源之0 N / 0 F F控制的流程圖。 【主要元件符號說明】Yes, that's fine. Furthermore, although the light irradiation area 6 1 (for example, the (-X) side and (+ Y) side in FIG. 4) is not mentioned in the embodiment described above, the light irradiation area 6 1 is located at the end in the sub-scanning direction in the light irradiation area group. Light irradiation control in the light irradiation area 6 1), but in order to easily perform the control, it may not be necessary to perform light irradiation in the light irradiation area 61, and the light is also irradiated on the side of the day after the sub-scan. Light Irradiation Field 61 1 Controlling light irradiation is also possible. Although the description of the present invention has been described in detail above, the above description is merely exemplary and is not restrictive. Therefore, as long as it does not depart from the scope of the present invention, it can be modified or changed in many ways. [Brief Description of the Drawings] FIG. 1 shows a configuration diagram of a pattern drawing device. Figure 2 shows a diagram of DMD. FIG. 3 is a diagram illustrating a light irradiation area and a pattern cell depicting a day unit. • Figure 4 shows the entire light irradiation area group and the cell group depicting the daytime unit pattern. ^ Figure 5 shows the flow chart of pattern drawing. Figures 6 to 9 show the areas of light irradiation and the pattern of the unit during the day. 24 312XP / Invention Specification (Supplement) / 94-08 / 94112212 200540577 Cells. Fig. 10 to Fig. 13 are graphs showing the relationship between the tilt of the light irradiation area group and the size of the light irradiation area group. FIG. 14 is a graph showing the amount of accumulated light. FIG. 15A is a graph showing the cumulative light amount of 0 N / 0 F F per daytime pitch. FIG. 15B is a graph showing the cumulative light quantity of 0 N / 0 F F every two day pitches. Fig. 1 5C shows a graph of the cumulative light quantity of 0 N / 0 F F every 3 days. FIG. 15D is a graph showing the cumulative light quantity of 0N / 0FF for every 4 drawing pitches. FIG. 1E shows the cumulative light quantity of 0 N / 0 F F every 5 days. Fig. 1 5 F is a graph showing the cumulative light quantity of 0 N / 0 F F every 6 daytime pitches. Fig. 15G is a graph showing the cumulative light quantity of 0 N / 0 F F every 8 daytime pitches. FIG. 16 is a graph showing cumulative light amounts at different light intensities. Figure 17 shows a flowchart of 0 N / 0 F F control of the light source. [Description of main component symbols]

1 圖 案 描 晝 裝 置 2 工 作 台 4 光 照 射 部 5 控 制 部 9 基 板 31 工 作 台 移 動 機構 32 頭 部 移 動 機 構 40 頭 部 4 1 光 源 單 元 42 DMD 312XP/發明說明書(補件)/94-08/941122121 Schematic drawing device 2 Workbench 4 Light irradiation section 5 Control section 9 Base plate 31 Workbench moving mechanism 32 Head movement mechanism 40 Head section 4 1 Light source unit 42 DMD 312XP / Invention manual (Supplement) / 94-08 / 94112212

25 200540577 群25 200540577 group

分器 光線分割器 距透鏡 鏡Splitter beam splitter distance lens mirror

4 3 照 明 光 44 投 影 光 61、 6 1 a 〜6 1 e 光 照 射 62a〜 62e 描 晝 單 4 11 LED 4 12 透 鏡 群 4 13 光 纖 422 微 小 鏡 433 標 尺 積 434 透 鏡 4 3 5 > 436 鏡 44 1 立 方 形 4 4 2 > 437 可 變 焦 4 4 2 a 、4 4 3 a 致 動 器 4 4 3、 449 投 影 透 451 半 透 明 452 雷 射 二 453 感 測 器 6 2 0、 621、 622 631、 6 3 2、 64 1 、 642 7 11 細 線 7 12 粗 線 學系統 學系統 領域 位圖案胞 鏡 極管 描晝單位圖案胞 線 , 26 312XP/發明說明書(補件)/94-08/941122124 3 Illumination light 44 Projection light 61, 6 1 a to 6 1 e Light irradiation 62a to 62e Trace day 4 11 LED 4 12 Lens group 4 13 Optical fiber 422 Micro-mirror 433 Scale product 434 Lens 4 3 5 > 436 Mirror 44 1 Cube 4 4 2 > 437 Zoom 4 4 2 a, 4 4 3 a Actuator 4 4 3, 449 Projection through 451 Translucent 452 Laser II 453 Sensor 6 2 0, 621, 622 631, 6 3 2, 64 1, 642 7 11 thin line 7 12 thick line system system system field bit pattern cytoscopy polar tube tracing unit pattern cell line, 26 312XP / Invention Specification (Supplement) / 94-08 / 94112212

Claims (1)

200540577 十、申請專利範圍: 1 . 一種圖案描晝裝置,係在感光材料上照射光而描晝圖 案之圖案描畫裝置,其具備有: 在感光材料上之互相垂直的2個排列方向對各別以一定 的節距所排列之光照射領域群照射被調變的光之光照射 部;及, 在感光材料上對前述光照射領域群以對排列方向傾斜 之掃描方向予以掃描,在前述掃描方向及和前述掃描方向 垂直方向以一定的描晝節距對各別被固定排列在前述感光 材料上的描晝領域群使複數個光照射領域相對通過的掃描 機構;及, 和前述光照射領域群之掃描同步而對前述光照射領域 群各別控制光照射之0 N / 0 F F,並控制照射在感光材料上之 各描晝領域之光量的控制部;如此所成,200540577 10. Scope of patent application: 1. A pattern drawing device, which is a pattern drawing device that irradiates light on a photosensitive material to draw a day pattern. The device is provided with: two mutually perpendicular arrangement directions on the photosensitive material. Irradiating a modulated light irradiated portion with a group of light irradiated areas arranged at a certain pitch; and, scanning the light irradiated area group on a photosensitive material in a scanning direction inclined to the arrangement direction, and scanning in the scanning direction And a scanning mechanism that passes through a plurality of light irradiation fields with a plurality of light irradiation fields that are fixedly arranged on the photosensitive material, respectively, with a certain tracing pitch perpendicular to the scanning direction; and, and the light irradiation field groups The control unit that controls the 0 N / 0 FF of the light irradiation and controls the light amount of each of the daylight areas irradiated on the photosensitive material for the aforementioned light irradiation field groups in synchronization with the scanning; 在前述光照射領域群之2個排列方向之中大致沿著前述 掃描方向之方向的互相隣接的光照射領域中,對前述掃描 方向垂直方向之中心間的距離為等於前述描晝節距,而對 前述掃描方向之中心間的距離為前述描晝節距之 a倍(但 是,a為2以上之整數),前述控制部僅在前述光照射領域 群在相對移動其距離為前述描晝節距之η倍(但是,η為3 以上之整數)之間作一次前述光照射之 0 Ν / 0 F F控制,而 (a 2 + 1 )和η互為素數。 2.如申請專利範圍第1項之圖案描晝裝置,其中, 在前述光照射領域群中之前述2個排列方向中在大致沿 27 312ΧΡ/發明說明書(補件)/94-08/94112212 200540577 著前述掃描方向所排列的光照射領域之數目為Μ,而Μ為 (axn)之整數倍。 3 .如申請專利範圍第1項之圖案描畫裝置,其中, 對光照射領域之光照射在成為 0N後,於前述光照射領 域群之前述描晝節距的η倍距離之相對移動終了之前使前 述光照射領域之光照射成為OFF。 4.如申請專利範圍第3項之圖案描畫裝置,其中, 自對前述光照射領域之光照射在成為0N起至OFF為止In the two light arranging directions of the light irradiating field group, which are adjacent to each other in the direction substantially along the scanning direction, the distance between the centers perpendicular to the scanning direction is equal to the tracing pitch, and The distance between the centers in the scanning direction is a times the aforesaid tracing pitch (however, a is an integer of 2 or more), and the control section moves relative to the light irradiating group only at a distance equal to the tracing pitch. Η times (however, η is an integer of 3 or more), the aforementioned 0 N / 0 FF control of light irradiation is performed once, and (a 2 + 1) and η are prime numbers to each other. 2. The pattern tracing device according to item 1 of the scope of patent application, wherein, in the aforementioned two arrangement directions in the aforementioned light irradiation field group, it is approximately along 27 312XP / Invention Specification (Supplement) / 94-08 / 94112212 200540577 The number of light irradiation areas arranged in the foregoing scanning direction is M, and M is an integer multiple of (axn). 3. The pattern drawing device according to item 1 of the scope of patent application, wherein after the light irradiation in the light irradiation area becomes 0N, the relative movement of the distance n times the aforementioned drawing pitch in the light irradiation area group is completed before The light irradiation in the light irradiation area is turned off. 4. The pattern drawing device according to item 3 of the scope of patent application, wherein the light irradiation in the aforementioned light irradiation area is from 0N to OFF. 之間,前述光照射領域群僅相對移動前述描晝節距。 5 .如申請專利範圍第3項之圖案描畫裝置,其中, 前述光照射部具有: 可ON/OFF控制之光源;及, 可將自前述光源來的光空間調變之空間光調變裝置。 6 . —種圖案描晝方法,在感光材料上照射光而描晝圖案 之圖案描晝方法,其具備有: 在感光材料上之互相垂直的2個排列方向對各別以一定 的節距所排列之光照射領域群照射被調變的光,對前述光 照射領域群於排列方向傾斜之掃描方向予以掃描,在前述 掃描方向及前述掃描方向之垂直方向以一定的描畫節距對 各別被固定排列在前述感光材料上的描晝領域群使複數之 光照射領域相對通過的掃描步驟;及, 和前述光照射領域群之掃描同步藉一面對前述光照射 領域群各別控制光照射之0 N / 0 F F,而一面控制照射在感光 材料上之各描晝領域之光量的控制步驟, 28 312XP/發明說明書(補件)/94-08/94112212 200540577 在前述光照射領域群之前述2個排列方向之中大致沿著 前述掃描方向之方向的互相隣接的光照射領域中,對前述 掃描方向垂直方向之中心間的距離為等於前述描晝節距, 而對前述掃描方向之中心間的距離成為前述描畫節距之 a 倍(但是,a為2以上之整數),前述控制步驟中僅在前述 光照射領域群在相對移動其距離為前述描晝節距之 η倍 (但是,η為3以上之整數)之間作一次前述光照射之0 Ν / 0 F F 控制,而(a 2 +1 )和η互為素數。In the meantime, the aforementioned light irradiation field group only relatively moves the aforementioned tracing pitch. 5. The pattern drawing device according to item 3 of the scope of patent application, wherein the light irradiating unit includes: a light source that can be controlled on / off; and a spatial light modulation device that can spatially modulate light from the light source. 6. A pattern-tracing method, a pattern-tracing method for tracing a day pattern by irradiating light on a photosensitive material, comprising: two mutually perpendicular arrangement directions on the photosensitive material, each of which is arranged at a certain pitch. The arrayed light irradiating field group irradiates modulated light, and scans the scanning direction in which the light irradiating field group is tilted in the arrangement direction, and the respective scanning directions are perpendicular to the scanning direction and the scanning direction is perpendicular to the scanning direction. A scanning step in which the daylight field group fixedly arranged on the photosensitive material passes a plurality of light irradiation fields; and, in synchronization with the scanning of the light irradiation field group, the light irradiation field group controls the light irradiation 0 N / 0 FF, while controlling the amount of light in each daylight field irradiated on the photosensitive material, 28 312XP / Invention Manual (Supplement) / 94-08 / 94112212 200540577 The distance between the centers of the two adjacent light irradiation areas adjacent to each other in a direction substantially perpendicular to the scanning direction among the alignment directions In order to be equal to the above-mentioned drawing pitch, and the distance between the centers of the scanning direction becomes a times of the above-mentioned drawing pitch (however, a is an integer of 2 or more), in the foregoing control step, only the light irradiation area group is relatively Move it at a distance of η times the aforementioned tracing pitch (however, η is an integer of 3 or more) to make a 0 NR / 0 FF control of the aforementioned light irradiation once, and (a 2 +1) and η are prime numbers to each other . 7 .如申請專利範圍第6項之圖案描晝方法,其中, 在前述光照射領域群中之前述2個排列方向中在大致沿 著前述掃描方向所排列的光照射領域之數目為 Μ,而Μ為 (axn)之整數倍。 8 .如申請專利範圍第6項之圖案描晝方法,其中, 對光照射領域之光照射在成為 0N後,在前述光照射領 域群之前述描畫節距的η倍距離之相對移動終了之前使前 述光照射領域之光照射成為OFF。 9 .如申請專利範圍第8項之圖案描晝方法,其中, 自對前述光照射領域之光照射在成為0N起至OFF為止 之間,前述光照射領域群僅相對移動前述描晝節距。 1 0 .如申請專利範圍第8項之圖案描晝方法,其中, 使來自0N/0FF可控制之光源的光藉空間光調變裝置被 空間調變而導至前述光照射領域群。 29 312XP/發明說明書(補件)/94-08/941122127. The pattern tracing method according to item 6 of the scope of patent application, wherein the number of light irradiation areas arranged along the scanning direction out of the two alignment directions in the light irradiation area group is M, and M is an integer multiple of (axn). 8. The pattern tracing method according to item 6 of the patent application scope, wherein after the light irradiation in the light irradiation field becomes 0N, the relative movement of the distance n times the drawing pitch of the light irradiation field group is terminated before The light irradiation in the light irradiation area is turned off. 9. The pattern tracing method according to item 8 of the scope of patent application, wherein the light irradiating area group only moves the tracing pitch relative to the light irradiating area group since the light is irradiated from 0N to OFF. 10. The pattern tracing method according to item 8 of the scope of patent application, wherein the light from the ON / 0FF controllable light source is spatially modulated by the spatial light modulation device to the aforementioned light irradiation field group. 29 312XP / Invention Manual (Supplement) / 94-08 / 94112212
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