CN100448008C - 半导体器件和用于制造半导体器件的方法 - Google Patents

半导体器件和用于制造半导体器件的方法 Download PDF

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Publication number
CN100448008C
CN100448008C CNB2006100066428A CN200610006642A CN100448008C CN 100448008 C CN100448008 C CN 100448008C CN B2006100066428 A CNB2006100066428 A CN B2006100066428A CN 200610006642 A CN200610006642 A CN 200610006642A CN 100448008 C CN100448008 C CN 100448008C
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CN
China
Prior art keywords
gate electrode
gate
insulating film
semiconductor substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CNB2006100066428A
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English (en)
Chinese (zh)
Other versions
CN1819200A (zh
Inventor
木下敦宽
土屋义规
古贺淳二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japanese Businessman Panjaya Co ltd
Kioxia Corp
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Toshiba Corp
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Publication date
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Publication of CN1819200A publication Critical patent/CN1819200A/zh
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Publication of CN100448008C publication Critical patent/CN100448008C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01322—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor contacting the insulator having a lateral variation in doping, composition or deposition steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01318—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN
    • H10D64/0132—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN the conductor being a metallic silicide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0179—Manufacturing their gate conductors the gate conductors having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0278—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline channels on wafers after forming insulating device isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/30—Diffusion for doping of conductive or resistive layers
    • H10P32/302—Doping polycrystalline silicon or amorphous silicon layers

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CNB2006100066428A 2005-01-27 2006-01-27 半导体器件和用于制造半导体器件的方法 Expired - Lifetime CN100448008C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005019293 2005-01-27
JP2005019293A JP4473741B2 (ja) 2005-01-27 2005-01-27 半導体装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN1819200A CN1819200A (zh) 2006-08-16
CN100448008C true CN100448008C (zh) 2008-12-31

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CNB2006100066428A Expired - Lifetime CN100448008C (zh) 2005-01-27 2006-01-27 半导体器件和用于制造半导体器件的方法

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Country Link
US (3) US20060163662A1 (https=)
JP (1) JP4473741B2 (https=)
CN (1) CN100448008C (https=)

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Publication number Priority date Publication date Assignee Title
JP4440080B2 (ja) * 2004-11-12 2010-03-24 株式会社東芝 半導体装置およびその製造方法
JP2007081249A (ja) * 2005-09-15 2007-03-29 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
CN1945852A (zh) * 2005-10-06 2007-04-11 松下电器产业株式会社 半导体装置及其制造方法
US20070090417A1 (en) * 2005-10-26 2007-04-26 Chiaki Kudo Semiconductor device and method for fabricating the same
JP2007173347A (ja) * 2005-12-20 2007-07-05 Renesas Technology Corp 半導体装置及びその製造方法
US20080093682A1 (en) * 2006-10-18 2008-04-24 Liang-Gi Yao Polysilicon levels for silicided structures including MOSFET gate electrodes and 3D devices
US20080237743A1 (en) * 2007-03-30 2008-10-02 Texas Instruments Incorporated Integration Scheme for Dual Work Function Metal Gates
US7482270B2 (en) * 2006-12-05 2009-01-27 International Business Machines Corporation Fully and uniformly silicided gate structure and method for forming same
US7550808B2 (en) * 2007-01-18 2009-06-23 International Business Machines Corporation Fully siliciding regions to improve performance
US20080173950A1 (en) * 2007-01-18 2008-07-24 International Business Machines Corporation Structure and Method of Fabricating Electrical Structure Having Improved Charge Mobility
WO2009101763A1 (ja) * 2008-02-12 2009-08-20 Panasonic Corporation 半導体装置及びその製造方法
US9934976B2 (en) * 2008-12-18 2018-04-03 Intel Corporation Methods of forming low interface resistance rare earth metal contacts and structures formed thereby
JP2010258124A (ja) * 2009-04-23 2010-11-11 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
US8642371B2 (en) * 2011-04-06 2014-02-04 Shamsoddin Mohajerzadeh Method and system for fabricating ion-selective field-effect transistor (ISFET)
CN104094383A (zh) * 2011-08-22 2014-10-08 1366科技公司 用于硅晶片的湿法酸化学蚀刻的制剂
US8629512B2 (en) * 2012-03-28 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Gate stack of fin field effect transistor with slanted sidewalls
US9111783B2 (en) * 2012-04-13 2015-08-18 Renesas Electronics Corporation Semiconductor devices with self-aligned source drain contacts and methods for making the same
US8921178B2 (en) * 2012-05-16 2014-12-30 Renesas Electronics Corporation Semiconductor devices with self-aligned source drain contacts and methods for making the same
CN103854980B (zh) * 2012-11-29 2016-05-11 中国科学院微电子研究所 形成半导体器件替代栅的方法以及制造半导体器件的方法
KR20160055784A (ko) * 2013-09-27 2016-05-18 인텔 코포레이션 공통 기판 상의 상이한 일함수를 가지는 비-평면 ｉ／ｏ 및 논리 반도체 디바이스들
US9520500B1 (en) * 2015-12-07 2016-12-13 International Business Machines Corporation Self heating reduction for analog radio frequency (RF) device
US10096596B2 (en) * 2015-12-15 2018-10-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure having a plurality of gate structures
KR102890787B1 (ko) * 2020-04-07 2025-11-26 삼성전자주식회사 게이트 스페이서를 갖는 반도체 소자들
US12490510B2 (en) * 2020-08-12 2025-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US20230187535A1 (en) * 2021-12-14 2023-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure with modified spacer and method for forming the same

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US20020052086A1 (en) * 2000-10-31 2002-05-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing same
WO2004057659A1 (en) * 2002-12-20 2004-07-08 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

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KR100495023B1 (ko) * 2000-12-28 2005-06-14 가부시끼가이샤 도시바 반도체 장치 및 그 제조 방법
US6372640B1 (en) * 2001-07-31 2002-04-16 Macronix International Co., Ltd. Method of locally forming metal silicide layers

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US20020052086A1 (en) * 2000-10-31 2002-05-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing same
WO2004057659A1 (en) * 2002-12-20 2004-07-08 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Totally Silicided (CoSi2) Polysilicon: a novel approach to verylow-resistive gate without metal CMP nor etching. B. Tavel, T. Skotnicki, et al.IEEE,IEDM 01. 2001
Totally Silicided (CoSi2) Polysilicon: a novel approach to verylow-resistive gate without metal CMP nor etching. B. Tavel, T. Skotnicki, et al.IEEE,IEDM 01. 2001 *

Also Published As

Publication number Publication date
JP2006210555A (ja) 2006-08-10
US20080308877A1 (en) 2008-12-18
CN1819200A (zh) 2006-08-16
US8357580B2 (en) 2013-01-22
US20060163662A1 (en) 2006-07-27
US20100062575A1 (en) 2010-03-11
JP4473741B2 (ja) 2010-06-02

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Patentee after: TOSHIBA MEMORY Corp.

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Patentee before: Japanese businessman Panjaya Co.,Ltd.

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Granted publication date: 20081231