CN100438103C - 半导体发光元件安装件以及使用它的半导体发光装置 - Google Patents
半导体发光元件安装件以及使用它的半导体发光装置 Download PDFInfo
- Publication number
- CN100438103C CN100438103C CNB2005800111056A CN200580011105A CN100438103C CN 100438103 C CN100438103 C CN 100438103C CN B2005800111056 A CNB2005800111056 A CN B2005800111056A CN 200580011105 A CN200580011105 A CN 200580011105A CN 100438103 C CN100438103 C CN 100438103C
- Authority
- CN
- China
- Prior art keywords
- semiconductor light
- metal film
- emitting elements
- base material
- installed part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 116
- 229910052751 metal Inorganic materials 0.000 claims abstract description 144
- 239000002184 metal Substances 0.000 claims abstract description 144
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 74
- 239000000956 alloy Substances 0.000 claims abstract description 23
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 23
- 229910052709 silver Inorganic materials 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 113
- 230000004888 barrier function Effects 0.000 claims description 44
- 150000002739 metals Chemical class 0.000 claims description 30
- 239000013078 crystal Substances 0.000 claims description 28
- 229910052719 titanium Inorganic materials 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 abstract description 14
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 60
- 239000004411 aluminium Substances 0.000 description 59
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 59
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 49
- 238000000034 method Methods 0.000 description 36
- 229910052697 platinum Inorganic materials 0.000 description 33
- 238000001579 optical reflectometry Methods 0.000 description 31
- 230000015572 biosynthetic process Effects 0.000 description 22
- 239000010936 titanium Substances 0.000 description 21
- 238000005259 measurement Methods 0.000 description 19
- 238000005240 physical vapour deposition Methods 0.000 description 18
- 239000012528 membrane Substances 0.000 description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 16
- 150000003057 platinum Chemical class 0.000 description 16
- 238000005266 casting Methods 0.000 description 14
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 13
- 238000005538 encapsulation Methods 0.000 description 13
- 229910017083 AlN Inorganic materials 0.000 description 11
- 238000007740 vapor deposition Methods 0.000 description 11
- 229910010271 silicon carbide Inorganic materials 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 239000002131 composite material Substances 0.000 description 7
- 238000009434 installation Methods 0.000 description 6
- 230000001788 irregular Effects 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 239000013081 microcrystal Substances 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000008719 thickening Effects 0.000 description 2
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004117180A JP4228303B2 (ja) | 2004-04-12 | 2004-04-12 | 半導体発光素子搭載部材と、それを用いた半導体発光装置 |
JP117180/2004 | 2004-04-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1943045A CN1943045A (zh) | 2007-04-04 |
CN100438103C true CN100438103C (zh) | 2008-11-26 |
Family
ID=35150266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800111056A Expired - Fee Related CN100438103C (zh) | 2004-04-12 | 2005-02-22 | 半导体发光元件安装件以及使用它的半导体发光装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7897990B2 (fr) |
EP (1) | EP1744374B1 (fr) |
JP (1) | JP4228303B2 (fr) |
KR (1) | KR101166742B1 (fr) |
CN (1) | CN100438103C (fr) |
WO (1) | WO2005101533A1 (fr) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1597777B1 (fr) | 2003-02-26 | 2013-04-24 | Cree, Inc. | Source de lumiere blanche composite et son procede d'obtention |
JP2006525682A (ja) | 2003-04-30 | 2006-11-09 | クリー インコーポレイテッド | 高出力固体発光素子パッケージ |
US20060237735A1 (en) * | 2005-04-22 | 2006-10-26 | Jean-Yves Naulin | High-efficiency light extraction structures and methods for solid-state lighting |
JP5226323B2 (ja) * | 2006-01-19 | 2013-07-03 | 株式会社東芝 | 発光モジュールとそれを用いたバックライトおよび液晶表示装置 |
TWI321857B (en) * | 2006-07-21 | 2010-03-11 | Epistar Corp | A light emitting device |
JP5122098B2 (ja) * | 2006-08-11 | 2013-01-16 | 株式会社トクヤマ | メタライズ基板、半導体装置 |
JP2008147203A (ja) * | 2006-12-05 | 2008-06-26 | Sanken Electric Co Ltd | 半導体発光装置 |
US9178121B2 (en) * | 2006-12-15 | 2015-11-03 | Cree, Inc. | Reflective mounting substrates for light emitting diodes |
JP4836769B2 (ja) * | 2006-12-18 | 2011-12-14 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
US20090008671A1 (en) * | 2007-07-06 | 2009-01-08 | Lustrous Technology Ltd. | LED packaging structure with aluminum board and an LED lamp with said LED packaging structure |
US20090026619A1 (en) * | 2007-07-24 | 2009-01-29 | Northrop Grumman Space & Mission Systems Corp. | Method for Backside Metallization for Semiconductor Substrate |
US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
US9024327B2 (en) * | 2007-12-14 | 2015-05-05 | Cree, Inc. | Metallization structure for high power microelectronic devices |
US8067782B2 (en) * | 2008-04-08 | 2011-11-29 | Advanced Optoelectric Technology, Inc. | LED package and light source device using same |
JP2009267274A (ja) * | 2008-04-30 | 2009-11-12 | Ngk Spark Plug Co Ltd | 発光素子実装用配線基板 |
US8044427B2 (en) | 2008-06-24 | 2011-10-25 | Dicon Fiberoptics, Inc. | Light emitting diode submount with high thermal conductivity for high power operation |
JP5773649B2 (ja) * | 2008-07-17 | 2015-09-02 | 株式会社東芝 | 発光装置とそれを用いたバックライト、液晶表示装置および照明装置 |
JP2010267694A (ja) * | 2009-05-13 | 2010-11-25 | Sony Corp | 半導体発光素子およびその製造方法ならびに半導体素子およびその製造方法 |
JP2011040668A (ja) * | 2009-08-18 | 2011-02-24 | Shin-Etsu Chemical Co Ltd | 光半導体装置 |
JP5258707B2 (ja) * | 2009-08-26 | 2013-08-07 | 株式会社東芝 | 半導体発光素子 |
TW201205882A (en) * | 2010-07-16 | 2012-02-01 | Foxsemicon Integrated Tech Inc | Manufacturing method for LED light emitting device |
JP5857355B2 (ja) * | 2010-09-16 | 2016-02-10 | Shマテリアル株式会社 | 半導体発光素子搭載用基板、及びそれを用いた半導体発光装置 |
US8846421B2 (en) * | 2011-03-10 | 2014-09-30 | Mds Co. Ltd. | Method of manufacturing lead frame for light-emitting device package and light-emitting device package |
JP5796480B2 (ja) * | 2011-12-15 | 2015-10-21 | 日亜化学工業株式会社 | 半導体装置 |
CN102584034A (zh) * | 2012-03-19 | 2012-07-18 | 山东力诺新材料有限公司 | 一种用于太阳能高温集热管的低辐射膜及其成型工艺 |
JP5949140B2 (ja) * | 2012-05-21 | 2016-07-06 | 日亜化学工業株式会社 | 半導体発光素子 |
KR102071424B1 (ko) * | 2013-01-08 | 2020-01-30 | 엘지이노텍 주식회사 | 발광소자 패키지 |
EP2980870B1 (fr) | 2013-03-28 | 2018-01-17 | Toshiba Hokuto Electronics Corporation | Dispositif électroluminescent, son procédé de fabrication et dispositif utilisant le dispositif électroluminescent |
CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
JP2016533030A (ja) * | 2013-07-24 | 2016-10-20 | クーレッジ ライティング インコーポレイテッド | 波長変換材料を組み込む発光ダイおよび関連方法 |
KR102311677B1 (ko) * | 2014-08-13 | 2021-10-12 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
US9379298B2 (en) | 2014-10-03 | 2016-06-28 | Henkel IP & Holding GmbH | Laminate sub-mounts for LED surface mount package |
JP5983836B2 (ja) * | 2015-07-31 | 2016-09-06 | 日亜化学工業株式会社 | 半導体装置 |
US9478587B1 (en) | 2015-12-22 | 2016-10-25 | Dicon Fiberoptics Inc. | Multi-layer circuit board for mounting multi-color LED chips into a uniform light emitter |
WO2017217221A1 (fr) * | 2016-06-16 | 2017-12-21 | 三菱電機株式会社 | Plaque de base à rayonnement pour montage de semiconducteur et son procédé de production |
KR102415343B1 (ko) * | 2017-09-25 | 2022-06-30 | 엘지전자 주식회사 | 디스플레이 디바이스 |
JP7054704B2 (ja) * | 2017-09-26 | 2022-04-14 | 京セラ株式会社 | 配線基板及び発光装置 |
CN108305959B (zh) * | 2018-01-25 | 2020-07-31 | 武汉华星光电半导体显示技术有限公司 | Oled阳极及其制造方法、oled基板的制造方法 |
US10775658B2 (en) * | 2018-03-29 | 2020-09-15 | Sharp Kabushiki Kaisha | Liquid crystal display device and method for manufacturing liquid crystal display device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0617226A (ja) * | 1992-05-07 | 1994-01-25 | Nkk Corp | 加工性および耐疵つき性に優れた鏡面反射板 |
JPH07243027A (ja) * | 1994-03-01 | 1995-09-19 | Kobe Steel Ltd | 反射部品用材料 |
JP2003209286A (ja) * | 2001-11-08 | 2003-07-25 | Nichia Chem Ind Ltd | 発光装置およびその製造方法 |
JP2004079750A (ja) * | 2002-08-16 | 2004-03-11 | Fuji Photo Film Co Ltd | 発光装置 |
JP2004111616A (ja) * | 2002-09-18 | 2004-04-08 | Toyoda Gosei Co Ltd | 発光装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09293904A (ja) | 1996-04-26 | 1997-11-11 | Nichia Chem Ind Ltd | Ledパッケージ |
US6486499B1 (en) | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
JP4248173B2 (ja) * | 2000-12-04 | 2009-04-02 | 株式会社東芝 | 窒化アルミニウム基板およびそれを用いた薄膜基板 |
JP2002217456A (ja) | 2001-01-19 | 2002-08-02 | Ngk Insulators Ltd | 半導体発光素子 |
JP4737842B2 (ja) | 2001-01-30 | 2011-08-03 | 京セラ株式会社 | 発光素子収納用パッケージの製造方法 |
TW518775B (en) * | 2002-01-29 | 2003-01-21 | Chi-Hsing Hsu | Immersion cooling type light emitting diode and its packaging method |
JP3982284B2 (ja) * | 2002-03-06 | 2007-09-26 | 住友電気工業株式会社 | サブマウントおよび半導体装置 |
JP3509809B2 (ja) | 2002-04-30 | 2004-03-22 | 住友電気工業株式会社 | サブマウントおよび半導体装置 |
JP4239509B2 (ja) * | 2002-08-02 | 2009-03-18 | 日亜化学工業株式会社 | 発光ダイオード |
TW554553B (en) * | 2002-08-09 | 2003-09-21 | United Epitaxy Co Ltd | Sub-mount for high power light emitting diode |
JP2004111618A (ja) | 2002-09-18 | 2004-04-08 | Seiko Epson Corp | 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器 |
JP4001169B2 (ja) | 2003-03-14 | 2007-10-31 | 住友電気工業株式会社 | 半導体装置 |
CN100459188C (zh) * | 2003-03-18 | 2009-02-04 | 住友电气工业株式会社 | 发光元件安装用构件以及使用该构件的半导体装置 |
JP3914887B2 (ja) * | 2003-03-27 | 2007-05-16 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
JP2005039194A (ja) * | 2003-06-26 | 2005-02-10 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置ならびに照明装置 |
-
2004
- 2004-04-12 JP JP2004117180A patent/JP4228303B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-22 US US10/599,036 patent/US7897990B2/en not_active Expired - Fee Related
- 2005-02-22 CN CNB2005800111056A patent/CN100438103C/zh not_active Expired - Fee Related
- 2005-02-22 KR KR1020067021211A patent/KR101166742B1/ko active IP Right Grant
- 2005-02-22 WO PCT/JP2005/002758 patent/WO2005101533A1/fr not_active Application Discontinuation
- 2005-02-22 EP EP05710489.5A patent/EP1744374B1/fr not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0617226A (ja) * | 1992-05-07 | 1994-01-25 | Nkk Corp | 加工性および耐疵つき性に優れた鏡面反射板 |
JPH07243027A (ja) * | 1994-03-01 | 1995-09-19 | Kobe Steel Ltd | 反射部品用材料 |
JP2003209286A (ja) * | 2001-11-08 | 2003-07-25 | Nichia Chem Ind Ltd | 発光装置およびその製造方法 |
JP2004079750A (ja) * | 2002-08-16 | 2004-03-11 | Fuji Photo Film Co Ltd | 発光装置 |
JP2004111616A (ja) * | 2002-09-18 | 2004-04-08 | Toyoda Gosei Co Ltd | 発光装置 |
Also Published As
Publication number | Publication date |
---|---|
EP1744374A4 (fr) | 2009-05-20 |
US7897990B2 (en) | 2011-03-01 |
JP4228303B2 (ja) | 2009-02-25 |
JP2005303012A (ja) | 2005-10-27 |
EP1744374B1 (fr) | 2014-04-02 |
WO2005101533A1 (fr) | 2005-10-27 |
CN1943045A (zh) | 2007-04-04 |
US20070215895A1 (en) | 2007-09-20 |
EP1744374A1 (fr) | 2007-01-17 |
KR101166742B1 (ko) | 2012-07-19 |
KR20070007138A (ko) | 2007-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100438103C (zh) | 半导体发光元件安装件以及使用它的半导体发光装置 | |
TWI501432B (zh) | Led晶片接合體、led封裝、及led封裝之製造方法 | |
CN105684170B (zh) | 发光装置 | |
US8692281B2 (en) | Light emitting diode submount with high thermal conductivity for high power operation | |
US7504671B2 (en) | Semiconductor device | |
US8459840B2 (en) | Semiconductor light emitting apparatus and light source apparatus using the same | |
US9491812B2 (en) | Light emitting device | |
JP4926481B2 (ja) | 発光ダイオード用パッケージ及び発光ダイオード | |
US9857059B2 (en) | Light emitting device, illuminating device and method of manufacturing light emitting device | |
US8759855B2 (en) | Light emitting device including support member and bonding member | |
US20050093116A1 (en) | Surface mount package for a high power light emitting diode | |
WO2010092972A1 (fr) | Substrat composite pour élément électroluminescent à del, son procédé de fabrication et élément électroluminescent à del | |
JP2010510650A (ja) | 発光セラミック及び光散乱材料を含む発光装置 | |
KR20070112411A (ko) | 반사 부재, 이것을 이용한 발광 장치 및 조명 장치 | |
KR20080049011A (ko) | 반도체 발광장치 | |
JP2019519118A (ja) | 発光ダイオードパッケージ | |
JP4172770B2 (ja) | 発光素子収納用パッケージおよび発光装置 | |
JP2008263248A (ja) | 半導体発光素子搭載部材およびその製造方法 | |
JP2005136123A (ja) | 発光素子収納用パッケージおよび発光装置 | |
JP2008147511A (ja) | 半導体発光装置およびその製造方法 | |
JP5077282B2 (ja) | 発光素子搭載用パッケージおよび発光装置 | |
JP2008153421A (ja) | 半導体発光装置およびその製造方法 | |
JP2009194241A (ja) | 半導体素子搭載基板とそれを用いた半導体装置 | |
JP2012044000A (ja) | 発光素子搭載用基体 | |
JP7147138B2 (ja) | 発光装置、照明装置、画像表示装置及び車両表示灯 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081126 |