CN100425666C - 含硼抛光系统及方法 - Google Patents
含硼抛光系统及方法 Download PDFInfo
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- CN100425666C CN100425666C CNB028212541A CN02821254A CN100425666C CN 100425666 C CN100425666 C CN 100425666C CN B028212541 A CNB028212541 A CN B028212541A CN 02821254 A CN02821254 A CN 02821254A CN 100425666 C CN100425666 C CN 100425666C
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- Prior art keywords
- chemical
- mechanical polishing
- polishing
- abrasive
- containing compound
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- 238000005498 polishing Methods 0.000 title claims abstract description 179
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims description 23
- 150000001875 compounds Chemical class 0.000 claims abstract description 34
- 239000004327 boric acid Substances 0.000 claims abstract description 26
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims abstract description 25
- 150000003839 salts Chemical class 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000003795 chemical substances by application Substances 0.000 claims description 14
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- 239000008365 aqueous carrier Substances 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- 125000003118 aryl group Chemical group 0.000 claims description 8
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- UYANAUSDHIFLFQ-UHFFFAOYSA-N borinic acid Chemical compound OB UYANAUSDHIFLFQ-UHFFFAOYSA-N 0.000 claims description 6
- 239000008139 complexing agent Substances 0.000 claims description 6
- 125000006649 (C2-C20) alkynyl group Chemical group 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- ZDQWVKDDJDIVAL-UHFFFAOYSA-N catecholborane Chemical compound C1=CC=C2O[B]OC2=C1 ZDQWVKDDJDIVAL-UHFFFAOYSA-N 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
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- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
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- 239000000395 magnesium oxide Substances 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- OJURWUUOVGOHJZ-UHFFFAOYSA-N methyl 2-[(2-acetyloxyphenyl)methyl-[2-[(2-acetyloxyphenyl)methyl-(2-methoxy-2-oxoethyl)amino]ethyl]amino]acetate Chemical compound C=1C=CC=C(OC(C)=O)C=1CN(CC(=O)OC)CCN(CC(=O)OC)CC1=CC=CC=C1OC(C)=O OJURWUUOVGOHJZ-UHFFFAOYSA-N 0.000 claims 2
- 125000001511 cyclopentyl group Chemical class [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 claims 1
- LMBFAGIMSUYTBN-MPZNNTNKSA-N teixobactin Chemical compound C([C@H](C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CO)C(=O)N[C@H](CCC(N)=O)C(=O)N[C@H]([C@@H](C)CC)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CO)C(=O)N[C@H]1C(N[C@@H](C)C(=O)N[C@@H](C[C@@H]2NC(=N)NC2)C(=O)N[C@H](C(=O)O[C@H]1C)[C@@H](C)CC)=O)NC)C1=CC=CC=C1 LMBFAGIMSUYTBN-MPZNNTNKSA-N 0.000 claims 1
- 239000006174 pH buffer Substances 0.000 abstract description 4
- 125000005619 boric acid group Chemical group 0.000 abstract 1
- 238000007517 polishing process Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 51
- 239000002585 base Substances 0.000 description 38
- 239000002253 acid Substances 0.000 description 27
- -1 R 13 Chemical compound 0.000 description 20
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- 229910000431 copper oxide Inorganic materials 0.000 description 8
- 229910001936 tantalum oxide Inorganic materials 0.000 description 8
- 238000009413 insulation Methods 0.000 description 7
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 150000002148 esters Chemical class 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 239000003153 chemical reaction reagent Substances 0.000 description 5
- 239000003352 sequestering agent Substances 0.000 description 5
- 150000001768 cations Chemical class 0.000 description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 4
- 230000009897 systematic effect Effects 0.000 description 4
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
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- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
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- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 description 2
- 239000012736 aqueous medium Substances 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 229910000085 borane Inorganic materials 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 2
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 2
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- 239000000126 substance Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- ANQSYQOHGAJRKN-UHFFFAOYSA-N 1,1'-biphenyl;boric acid Chemical compound OB(O)O.C1=CC=CC=C1C1=CC=CC=C1 ANQSYQOHGAJRKN-UHFFFAOYSA-N 0.000 description 1
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 description 1
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- XDVOLDOITVSJGL-UHFFFAOYSA-N 3,7-dihydroxy-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound O1B(O)OB2OB(O)OB1O2 XDVOLDOITVSJGL-UHFFFAOYSA-N 0.000 description 1
- GDTSJMKGXGJFGQ-UHFFFAOYSA-N 3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound O1B([O-])OB2OB([O-])OB1O2 GDTSJMKGXGJFGQ-UHFFFAOYSA-N 0.000 description 1
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- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
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- 239000001263 FEMA 3042 Substances 0.000 description 1
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- 125000005843 halogen group Chemical group 0.000 description 1
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- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
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- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical class CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 1
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- HXITXNWTGFUOAU-UHFFFAOYSA-N phenylboronic acid Chemical compound OB(O)C1=CC=CC=C1 HXITXNWTGFUOAU-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 1
- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 235000019394 potassium persulphate Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 150000003852 triazoles Chemical group 0.000 description 1
- BYGOPQKDHGXNCD-UHFFFAOYSA-N tripotassium;iron(3+);hexacyanide Chemical compound [K+].[K+].[K+].[Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] BYGOPQKDHGXNCD-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical group [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1002—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
- Y10T156/1051—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina by folding
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本发明提供一种化学-机械抛光系统,包括研磨剂、载体及硼酸或其共轭碱,其中硼酸及共轭碱不同时以作为pH缓冲剂的足够量存在于抛光系统中,或水可溶含硼化合物或其盐,所述含硼化合物不是硼酸;及提供一种使用该化学-机械抛光系统使基材抛光的方法。
Description
发明领域
本发明有关一种含硼的抛光系统及其用于使基材化学-机械抛光(“CMP”)的方法。
发明背景
使基材表面平坦化或抛光的组合物及方法为本技术领域众所周知的。抛光组合物(亦称为抛光浆液)一般为含研磨剂的水溶液且通过使表面与以该浆液组合物饱和的抛光垫接触而施加至表面上。典型的研磨剂包含二氧化硅、氧化铈、氧化铝、氧化锆及氧化锡。例如USP 5,527,423描述一种通过使表面与包括高纯度细金属氧化物颗粒在水性介质中的抛光浆液接触而使金属层化学-机械抛光之方法。此外,研磨剂可混入抛光垫中。USP5,489,233揭示具有表面纹理或图形的抛光垫的用途,及USP 5,958,794揭示一种固定之研磨抛光垫。
通用的抛光系统及抛光方法在使半导体晶片平坦化方面一般未全然令人满意。尤其,抛光组合物及抛光垫可能具有小于所需抛光速率,且其在半导体表面上的化学-机械抛光的应用导致不良的表面品质。由于半导体晶片性能与其表面平坦度直接相关,因此使用可导致高抛光效率、均匀度及移除率且以最小表面缺陷留下高品质抛光的抛光组合物及方法是重要的。
产生半导体晶片的有效抛光系统的困难处在于半导体晶片的复杂性。半导体晶片典型地由基材所构成,其上形成数个晶体管。积成电路通过基材上的图形化区域及基材上的层而化学及物理地连接至基材中。为了产生可操作的半导体晶片及使产量、性能及晶片可靠性最大,宜抛光晶片的选择表面而不会对底下结构或拓朴图形有不利影响。事实上,若加工步骤未在适当平坦化的晶片表面上进行,则可能发生半导体制造的各种问题。
化学-机械抛光组合物中使用酸为本技术领域已知。例如USP 5,858,813描述包括水性介质、研磨剂、氧化剂及有机酸的抛光组合物,其适当地增进金属对氧化物抛光速率的选择性。USP 5,800,577描述一种以碱金属调整pH至5及9之间的抛光组合物,包括羧酸、氧化剂及水。USP 5,733,819描述一种抛光组合物,其包括氮化硅细粉末、水及酸。USP 6,048,789描述一种抛光组合物,包括硝酸及氢氟酸用于蚀刻氧化硅。
酸缓冲剂用以控制抛光组合物的pH且因此维持抛光组合物的经时抛光效率及均匀度。USP 6,190,237描述两步骤抛光系统,包括以酸性(pH=1至6)抛光组合物抛光的第一步骤接着以包括研磨剂及pH缓冲成分(亦即酸或其与碱的盐)的中性抛光组合物抛光的第二步骤,其适当地维持第二组合物的所需pH,尽管存在有第一步骤的残留酸性抛光组合物,因此可避免抛光性能丧失。USP 6,238,592描述一种抛光组合物,其包括氧化剂、钝化剂、螯合剂、任选的研磨剂及离子性缓冲剂以控制pH(如酸与其共轭碱盐的组合),用于半导体抛光。
酸亦可在完成CMP后用于清洗半导体表面。例如,USP 6,169,034描述一种在CMP之后使用稀酸溶液自半导体表面移除研麻颗粒的方法,而不使用缓冲或洗涤。USP 6,143,705描述使用包括具有羧基的有机酸及具有螯合能力的络合剂的清洁剂。
然而,仍持续需要在基材抛光及平坦化期间可展现所需平坦化效率、均匀度及移除率的抛光系统及抛光方法,而使缺陷最小,如在抛光及平坦化期间的表面缺陷及对底下结构及拓朴图形的损害。
本发明寻求提供此化学-机械抛光系统及方法。本发明这些及其他优点将可由本文提供对本发明的说明变得显而易见。
发明概述
本发明提供一种化学-机械抛光系统,包括研磨剂、硼酸或其共轭碱及水性载体,其中硼酸及共轭碱不同时以作为pH缓冲剂的足够量存在于抛光系统中。本发明亦提供一种化学-机械抛光系统,包括研磨剂、水性载体及水可溶含硼化合物,其非本文所述的式I-VII的硼酸。本发明又提供一种使基材抛光的方法,包括使基材与本文所述的化学-机械抛光系统之一接触,及研磨至少部分基材而使基材抛光。
发明详细说明
本发明涉及一种化学-机械抛光系统,包括研磨剂及/或抛光垫、水性载体及硼酸或其共轭碱,其中硼酸及共轭碱不同时以作为pH缓冲剂的足够量存在于抛光系统中。本发明还涉及一种化学-机械抛光系统,包括研磨剂及/或抛光垫、水性载体及式I-VII的水可溶含硼化合物或其盐,所述含硼化合物不是硼酸:
其中,
R1、R2、R3、R5、R6、R9、R14、R18、R19、R22、R23及R24独立选自H、C1-20烷基、C6-30芳基,包含多环芳基、环(C3-20)烷基、杂(C6-30)芳基包含多环杂芳基、C3-20杂环基、C2-20烯基及C2-20炔基,
R4、R7、R8、R10、R11、R12、R13、R15、R16、R17、R20、R21及R25独立选自H、卤素、C1-20烷基、C6-30芳基,包含多环芳基、环(C3-20)烷基、杂(C6-30)芳基包含多环杂芳基、C3-20杂环基、C2-20烯基及C2-20炔基,
式中任意两个R取代基可经由选自C、N、O及S的1-16个原子键联而形成环状环,及
R1-R25任选经1-5个独立选自下列的取代基取代:卤素、C1-20烷基、C1-20烷氧基、硫代(C1-20)烷基、C6-30芳基,包含多环芳基、C6-30芳(C1-20)烷基、C6-30芳(C1-20)烷氧基、硫代(C6-30)芳基、环(C3-20)烷基、环(C3-20)烷氧基、杂(C6-30)芳基,包含多环杂芳基、C3-20杂环基、杂环(C3-20)芳氧基、C2-20烯基、C2-20炔基、B(OH)(C1-20烷基)、B(OH)(环(C3-20)烷基、B(OH)(C6-30芳基)、B(OH)(C6-30)杂芳基)、B(OH)2、硫醇基、羟基、卤代(C1-20)烷基、卤代(C1-20)烷氧基、硝基、氨基、C1-20烷氨基、二(C1-20)烷氨基、氨基(C1-20)烷基、C1-20烷氨基(C1-20)烷基、基、氰基、羰基、C1-20烷基羰基、羧基、羧基(C1-20)烷基、甲硅烷基及甲硅烷氧基。
研磨剂(当存在且悬浮于水性载体中)及硼酸或其共轭碱、或上述式I-VII的水可溶含硼化合物或其盐以及任何其他成分悬浮于液体载体中,形成CMP系统的抛光组合物。
该化学-机械抛光系统包括研磨剂、抛光垫,或两者。优选,该CMP系统包括研磨剂及抛光垫两者。研磨剂可为任何适当研磨剂。研磨剂可固定在抛光垫上及/或可呈颗粒状且悬浮于水性载体中。该抛光垫可为任何适当抛光垫。
该研磨剂可为任何适当研磨剂,其许多为本技术领域已知。例如,研磨剂颗粒可为天然或合成的且包含钻石(如多晶钻石)、石榴石、玻璃、金刚砂、金属氧化物(如氧化硅、热解法氧化铝、陶瓷氧化铝、氧化铬及氧化铁)等。该研磨颗粒可为包衣颗粒研磨剂。该研磨剂优选为金属氧化物研磨剂且更优选选自氧化铝、氧化硅、氧化钛、氧化铈、氧化锆、氧化锗、氧化镁、其共同形成的产物、及其组合。最优选,该研磨剂为氧化铝或氧化硅。
当研磨剂存在于CMP系统中且悬浮于液体载体(亦即当研磨剂为抛光组合物的成分)时,任何适当量的研磨剂可存在于抛光组合物中。典型地,抛光组合物中存在0.1wt.%或以上(如0.5wt.%或以上)研磨剂。更典型地,抛光组合物中可存在1wt.%或以上研磨剂。抛光组合物中研磨剂量一般不超过30wt.%,更典型不超过20wt.%(如不超过10wt.%)。
水性载体用以促进研磨剂(当存在时)及硼酸或其共轭碱、或水可溶含硼化合物或其盐涂布至欲抛光或欲平坦化的适当基材表面。该水性载体可仅为水,可包括水及适当水可溶混溶剂或可为乳液。适当的水可溶混溶剂包含醇如甲醇、乙醇等。优选,水性载体系由水所构成,更优选由去离子水组成。
本发明的化学-机械抛光系统的pH维持在适于其所欲终用途的范围内。该CMP系统优选pH在约2至约12的范围,取决于欲抛光基材种类。该抛光系统的pH可小于约7(如小于6、2至5、或3至4.5)或pH大于7(如8至14、9至13、或10至12)。当抛光系统使用于使包含铜的基材层抛光时,pH优选4至8。当抛光系统用以使包括钽的基材层抛光时,pH优选8至11。当钽抛光的抛光系统还包括氧化剂时,pH优选4至7。当抛光系统用于使包括钨的基材层抛光时,pH优选1.5至5。
本发明一个实施方案中,该硼酸或其共轭碱存在量为在化学-机械抛光系统的条件下不起部分pH缓冲系统的作用。当弱酸与其共轭碱组合时发生缓冲作用。例如,硼酸与相同摩尔量的四硼酸铵组合构成缓冲溶液时,其pH可通过导入少量强酸或强碱而维持集中在pKa范围中,本发明的化学-机械抛光系统不含有硼酸与相同摩尔量的其共轭碱亦即四硼酸盐组合,其在一起时会缓冲化学-机械抛光系统的pH。共轭碱(四硼酸盐离子摩尔量小于硼酸摩尔量的20%(如小于10%,或小于5%)(即当pH<pKa 1时),或者硼酸摩尔量小于四硼酸盐离子摩尔量的20%(如小于10%,或小于5%)(即当pKa 1<pH<pKa 2时)。
本发明另一实施方案中,上述式I-VII的水可溶含硼化合物或其盐存在于化学-机械抛光系统中,条件是水可溶含硼化合物并非硼酸或其盐。当水可溶含硼化合物为盐时,抗衡离子可为任何适当抗衡阳离子。例如,抗衡阳离子可为铵、烷基铵、二-、三-及四-烷基铵、钾、铯等。抗衡阳离子的选择取决于欲抛光的基材的类型及于液体载体中的溶解度。式I-VII化合物包含例如硼酸三烷基酯、硼酸三芳基酯、单烃基硼酸(boronic acid)、diboronic酸、单烃基硼酸酯(boronic ester)、二烃基硼酸(borinic acid)、diborinic酸、二烃基硼酸酯(borinic ester)、四烷基硼酸盐及四芳基硼酸盐。优选,该水可溶的含硼化合物为硼酸三烷基酯(如硼酸三甲基酯)、二烃基硼酸酸酯(如二苯基硼酸酸二乙醇胺酯)、单烃基硼酸(如苯基硼酸酸)、单烃基硼酸酯(如芳基硼酸-频哪醇酯)或四芳基硼酸盐(如四丁基铵四苯基硼酸盐)。更优选该水可溶含硼化合物为苯并二氧硼杂环戊烷(benzodioxaborole)化合物。最优选,水可溶含硼化合物为B-溴儿茶酚硼烷。本发明的水可溶含硼化合物可就地产生,如使硼酸与适当醇、二醇、羧酸或二羧酸结合或使二硼酸酯(如二硼酸频哪醇酯或二硼酸儿茶酚酯)与适当有机化合物(如芳基卤化物)结合。
该化学-机械抛光系统任选还包括氧化剂。氧化剂可为任何氧化剂。适当氧化剂包含无机及有机过氧化合物、溴酸盐、氯酸盐、硝酸盐、铬酸盐、碘酸盐、铁盐(如硝酸盐、硫酸盐、EDTA及柠檬酸盐)、碱土金属及过渡金属氧化物(如四氧化锇)、铁氰化钾、重铬酸钾、碘酸等。过氧化合物(如Hawley′s简明化学辞典所定义)为含至少一个过氧基(-O-O-)的化合物或含最高氧化态元素的化合物。含至少一个过氧基的化合物实例包含但不限于过氧化氢及其加合物如尿素过氧化氢及过碳酸盐、有机过氧化物如过氧苯甲酰、过乙酸及二叔丁基过氧化物、单过硫酸盐(SO5 2-)、二过硫酸盐(S2O8 2-)及过氧化钠。含最高氧化态元素的化合物实例包含但不限于高碘酸、高碘酸盐、高溴酸、高溴酸盐、高氯酸、高氯酸盐、过硼酸、过硼酸盐、及高锰酸盐。氧化剂优选为过氧化物或过硫酸盐。
该化学-机械抛光系统任选还包括膜形成剂。该膜形成剂可为任何膜形成剂。典型地,膜形成剂为含至少一个含杂原子(N、O或S)官能基的有机化合物。例如,膜形成剂可为含至少一个5-或6-员杂环作为活性官能基的杂环有机化合物,其中该杂环含有至少一个氮原子(如唑类(azoles))。优选该膜形成剂为三唑,更优选1,2,4-三唑或苯并三唑。
该化学-机械抛光系统任选还包括螯合剂或络合剂。适宜螯合剂或络合剂可包含例如羰基化合物(如乙酰丙酮酸盐等)、单羧酸盐(如乙酸盐、芳基羧酸盐等)、含一或多个羟基的羧酸盐(如乙醇酸盐、乳酸盐、葡糖酸盐、培酸及其盐等)、二-、三-及多-羧酸盐(如草酸盐、邻苯二甲酸盐、柠檬酸盐、琥珀酸盐、酒石酸盐、马来酸盐、乙二胺四乙酸盐(如EDTA二钾)、其混合物等)、含一或多个磺酸及/或磷酸基的羧酸盐等。适当螯合剂或络合剂亦可包含例如二-、三-或多元醇(如乙二醇、焦儿茶酚、焦培醇、丹宁酸等)及含氨基化合物(如氨、氨基酸、氨基醇、二-、三-及多胺等)。优选,该络合剂为羧酸盐,更优选为草酸盐。
应理解许多前述化合物可以盐(如金属盐、铵盐等)、酸、或以部分盐形式存在。例如柠檬酸包含柠檬酸以及其单-、二-及三-盐;邻苯二甲酸包含邻苯二甲酸以及其单盐(如邻苯二甲酸氢钾)及二-盐;高氯酸包含对应酸(亦即高氯酸)以及其盐。再者,某些化合物或试剂可有一种以上的作用。例如,有些化合物可起螯合剂及氧化剂两者的作用(如某些硝酸铁等)。
该化学-机械抛光系统任选还包括界面活性剂。适当界面活性剂可包含例如阳离子界面活性剂、阴离子界面活性剂、非离子界面活性剂、两性界面活性剂、其混合物等。优选界面活性剂为Triton DF-6。
该化学-机械抛光系统优选包括0.5wt%或以上的载体悬浮研磨剂颗粒、0.01wt%或以上的硼酸、其共物碱、或上述的水可溶含硼化合物或其盐及水。
本文所述的化学-机械抛光系统可用以使基材抛光。使基材抛光的方法包括(i)使基材与化学-机械抛光系统接触,及(ii)研磨至少部分基材而使基材抛光。该化学-机械抛光系统优选用于使包括至少一个金属层及任选之绝缘层的基材抛光的方法,因而该基材与该化学-机械抛光系统接触且基材的至少部分金属层或绝缘层(若存在)予以研磨使得该金属层或绝缘层被抛光。该基材可为任何适宜基材(如积成电路、存储盘或硬盘、金属、ILD层、半导体、微电子-机械系统、铁电、磁头、聚合物薄膜及低与高介电常数薄膜)且可含任何适当绝缘、金属或金属合金层(如金属导电层)。该绝缘层可为金属氧化物、多孔金属氧化物、玻璃、有机聚合物、氟化有机聚合物或任何其他适当高或低-k绝缘层。该绝缘层优选为硅基金属氧化物。该金属层优选包括铜、钨、钽或钛。
本发明的CMP系统可以相当高速率、在基材抛光或平坦化期间以所需的平坦化效率、均匀度、移除率及低缺陷而使基材平坦化或抛光。
下列实例进一步说明本发明当然不以任何方式限制本发明。
实例1
此实例证明添加硼酸至化学-机械抛光组合物中对金属氧化物及金属层抛光速率的影响。
包括铜、钽及氧化硅层的类似基材以两种不同化学-机械抛光系统抛光,各包括相同抛光垫配合不同抛光组合物(抛光组合物1A及1B)。抛光组合物1A(对照)包括3wt%氧化铝、0.7wt%草酸铵、2.5wt%过氧化氢、水及无硼酸且pH以KOH调整至7.7。抛光组合物1B(本发明)与抛光组合物1A(对照组)相同,但其还包括2wt%硼酸。对各化学-机械抛光系统测量基材的铜、钽及氧化硅层移除速率。
关于使用抛光组合物1A(对照)的化学-机械抛光系统,铜、钽及氧化硅层移除速率分别测定为9085、160及135埃/分钟。关于使用抛光组合物1B(本发明)的化学-机械抛光系统,铜、钽及氧化硅层移除速率分别测定为5140、497及132埃/分钟。因此,对铜的移除速率实质上降低,而对钽移除率实质上增加。氧化硅的移除率实质上不变。
这些结果说明通过使用本发明的化学-机械抛光系统,钽比铜的抛光选择性实质上增加(约0.02至约0.1Ta/Cu)。显著地,与对照的化学-机械抛光系统比较,本发明的化学-机械抛光系统所观察的实质上较高的钽抛光率并未伴随增加对金属氧化层的抛光率。
实例2
此实例说明添加硼酸至化学-机械抛光组合物中对金属氧化物及金属层抛光速率的影响。
包括铜、钽及氧化硅层的类似基材以两种不同化学-机械抛光系统抛光,各包括相同抛光垫配合不同抛光组合物(抛光组合物2A及2B)。抛光组合物2A(对照)包括7.2wt%氧化硅、0.3wt苯并三唑、20ppm Triton DF-16界面活性剂、0.37wt%过硫酸钾、水及无硼酸且pH以KOH调整至6。抛光组合物2B(本发明)与抛光组合物2A(对照)相同,但其还包括2wt%硼酸。对各化学-机械抛光系统测量基材的铜、钽及氧化硅层移除速率。
关于使用抛光组合物2A(对照)的化学-机械抛光系统,对铜、钽及氧化硅层移除速率分别测定为1360、356及43埃/分钟。关于使用抛光组合物2B(本发明)的化学-机械抛光系统,对铜、钽及氧化硅层移除速率分别测定为62、75及510埃/分钟。因此,对铜及钽的移除速率实质上降低,而对氧化硅移除率实质上增加。
这些结果说明通过使用本发明的包括硼酸的化学-机械抛光系统,氧化硅比钽及铜的抛光选择性实质上增加。
实例3
此实例说明添加水可溶含硼化合物至化学-机械抛光组合物中对金属氧化物及金属层抛光速率的影响。
包括铜的相同基材以两种不同化学-机械抛光系统抛光,各包括相同抛光垫配合不同抛光组合物(抛光组合物3A及3B)。抛光组合物3A(对照)包括3wt%氧化铝、0.7wt%草酸铵、2.5wt%过氧化氢、水及无含硼化合物且pH以KOH调整至7.7。抛光组合物3B(本发明)与抛光组合物3A(对照)相同,但其还包括1wt%B-溴儿茶酚硼烷。对各化学-机械抛光系统测量基材的铜层移除速率。
关于使用抛光组合物3A(对照)的化学-机械抛光系统,对铜层移除速率测定为9085埃/分钟及19%内部-晶片-非-均匀度(WIWNU)。该WIWNU为使移除速率标准偏差除以基材上平均移除速率并乘以100所计算的百分比。关于使用抛光组合物3B(本发明)的化学-机械抛光系统,移除速率测定为12150埃/分钟而仅7%WIWNU。因此,对铜的移除速率实质上增加而无任何抛光均匀度损失。事实上,抛光均匀度确实因水可溶含硼化合物的存在而改良。
此实例说明通过使用本发明的包括水可溶含硼化合物的化学-机械抛光系统,金属层的抛光速率实质上增加。
引用的所有参考文献,包含公报、专利申请案及专利列入本说明书作参考,好象各参考文献个别及特别指出时均列入本文供参考。
于说明书(尤其下列权利要求)描述中使用措词“一”及“该”及类似参考表示用以涵盖单一及数个,除非另有说明或与说明书中明显抵触。本文陈述的范围值仅用以作为个别表示落于该范围内的个别值的速记方法,除非另外说明,且个别值在其个别陈述时并入该说明书中。本文描述的所有方法可以任何适当顺序进行,除非另有说明或与说明书明显抵触。使用任何及所有实施例或例举的语言(例如“如”)仅用以更佳说明本发明而不用以限制本发明的范围,除非有所说明。说明书中无任何语言表示任何非要求构件作为实施本发明的必要构件。
本文描述本发明优选实施方案,包含本发明者已知实施本发明的最佳方式。当然。这些优选实施方案的变化对本技术领域技术熟练的人员在阅读前面描述后可变得显而易见。本发明者预期技术熟练的专业人员可适当利用此变化,且本发明者期望本发明可在本文所述以外的方式实施。据此,本发明包含权利要求中所述主题的所有改进及等同物,这是适用的法律允许的。再者,其所有可能变化中上述构件的任何组合均被本发明涵盖,除非另有说明。
Claims (22)
2.如权利要求1所述的化学-机械抛光系统,其中该水可溶含硼化合物为单烃基硼酸、或单烃基硼酸二甲酯。
3.如权利要求1所述的化学-机械抛光系统,其中该水可溶含硼化合物为苯并二氧硼杂环戊烷化合物。
4.如权利要求3所述的化学-机械抛光系统,其中该水可溶含硼化合物为B-溴儿茶酚硼烷。
5.如权利要求1所述的化学-机械抛光系统,其中该水可溶含硼化合物是就地产生的。
6.如权利要求1所述的化学-机械抛光系统,其中该研磨剂为金属氧化物。
7.如权利要求6所述的化学-机械抛光系统,其中该研磨剂选自氧化铝、氧化硅、氧化钛、氧化铈、氧化锆、氧化锗、氧化镁、其共同形成的产物、或其组合。
8.如权利要求7所述的化学-机械抛光系统,其中该研磨剂为氧化铝或氧化硅。
9.如权利要求1所述的化学-机械抛光系统,其中该研磨剂固定在抛光垫上。
10.如权利要求1所述的化学-机械抛光系统,其中该研磨剂为颗粒状且悬浮于载体中。
11.如权利要求1所述的化学-机械抛光系统,其中该载体为水。
12.如权利要求1所述的化学-机械抛光系统,其中该系统还包括氧化剂。
13.如权利要求12所述的化学-机械抛光系统,其中该氧化剂为过氧化物。
14.如权利要求12所述的化学-机械抛光系统,其中该氧化剂为过硫酸盐。
15.如权利要求1所述的化学-机械抛光系统,其中该系统还包括膜形成剂。
16.如权利要求15所述的化学-机械抛光系统,其中该膜形成剂为唑类。
17.如权利要求1所述的化学-机械抛光系统,其中该系统包括0.5wt%或以上的载体悬浮的研磨颗粒、0.01wt%或以上的水可溶含硼化合物或其盐、及水。
18.如权利要求17所述的化学-机械抛光系统,其中该研磨剂颗粒为氧化铝或氧化硅颗粒,及水可溶含硼化合物为单烃基硼酸、或单烃基硼酸二甲酯。
19.如权利要求1所述的化学-机械抛光系统,其中该系统还包括络合剂。
20.一种抛光基材的方法,包括:
(i)使基材与根据权利要求1-19中任一项的化学-机械抛光系统接触;
(ii)研磨至少部分该基材而使该基材抛光。
21.如权利要求20所述的方法,其中该基材包括金属氧化物层及金属层。
22.如权利要求21所述的方法,其中该金属层包括铜、钨、钽或钛。
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US10/033,152 US6705926B2 (en) | 2001-10-24 | 2001-10-24 | Boron-containing polishing system and method |
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CN100425666C true CN100425666C (zh) | 2008-10-15 |
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CNB028212541A Expired - Fee Related CN100425666C (zh) | 2001-10-24 | 2002-09-24 | 含硼抛光系统及方法 |
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Country | Link |
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US (2) | US6705926B2 (zh) |
EP (1) | EP1448736B1 (zh) |
JP (1) | JP2005507165A (zh) |
CN (1) | CN100425666C (zh) |
AT (1) | ATE431388T1 (zh) |
DE (1) | DE60232356D1 (zh) |
TW (1) | TWI232234B (zh) |
WO (1) | WO2003035782A1 (zh) |
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- 2002-09-24 CN CNB028212541A patent/CN100425666C/zh not_active Expired - Fee Related
- 2002-09-24 WO PCT/US2002/031945 patent/WO2003035782A1/en active Application Filing
- 2002-09-24 AT AT02776164T patent/ATE431388T1/de not_active IP Right Cessation
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US11499072B2 (en) | 2019-08-30 | 2022-11-15 | Saint-Gobain Ceramics & Plastics, Inc. | Composition and method for conducting a material removing operation |
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Also Published As
Publication number | Publication date |
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TWI232234B (en) | 2005-05-11 |
DE60232356D1 (zh) | 2009-06-25 |
JP2005507165A (ja) | 2005-03-10 |
WO2003035782A1 (en) | 2003-05-01 |
ATE431388T1 (de) | 2009-05-15 |
US6705926B2 (en) | 2004-03-16 |
CN1575325A (zh) | 2005-02-02 |
US7001253B2 (en) | 2006-02-21 |
EP1448736B1 (en) | 2009-05-13 |
US20040180612A1 (en) | 2004-09-16 |
US20030077985A1 (en) | 2003-04-24 |
EP1448736A1 (en) | 2004-08-25 |
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