DE60232356D1 - - Google Patents
Info
- Publication number
- DE60232356D1 DE60232356D1 DE60232356T DE60232356T DE60232356D1 DE 60232356 D1 DE60232356 D1 DE 60232356D1 DE 60232356 T DE60232356 T DE 60232356T DE 60232356 T DE60232356 T DE 60232356T DE 60232356 D1 DE60232356 D1 DE 60232356D1
- Authority
- DE
- Germany
- Prior art keywords
- boric acid
- polishing system
- chemical
- conjugate base
- mechanical polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004327 boric acid Substances 0.000 abstract 3
- 238000005498 polishing Methods 0.000 abstract 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 125000005619 boric acid group Chemical group 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000006174 pH buffer Substances 0.000 abstract 1
- 238000007517 polishing process Methods 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1002—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
- Y10T156/1051—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina by folding
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/033,152 US6705926B2 (en) | 2001-10-24 | 2001-10-24 | Boron-containing polishing system and method |
PCT/US2002/031945 WO2003035782A1 (en) | 2001-10-24 | 2002-09-24 | Boron-containing polishing system and method |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60232356D1 true DE60232356D1 (de) | 2009-06-25 |
Family
ID=21868825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60232356T Expired - Lifetime DE60232356D1 (de) | 2001-10-24 | 2002-09-24 |
Country Status (8)
Country | Link |
---|---|
US (2) | US6705926B2 (de) |
EP (1) | EP1448736B1 (de) |
JP (1) | JP2005507165A (de) |
CN (1) | CN100425666C (de) |
AT (1) | ATE431388T1 (de) |
DE (1) | DE60232356D1 (de) |
TW (1) | TWI232234B (de) |
WO (1) | WO2003035782A1 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7112121B2 (en) * | 2000-08-30 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
US7153195B2 (en) * | 2000-08-30 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatus for selectively removing conductive material from a microelectronic substrate |
US7220166B2 (en) * | 2000-08-30 | 2007-05-22 | Micron Technology, Inc. | Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate |
US7129160B2 (en) * | 2002-08-29 | 2006-10-31 | Micron Technology, Inc. | Method for simultaneously removing multiple conductive materials from microelectronic substrates |
US7192335B2 (en) * | 2002-08-29 | 2007-03-20 | Micron Technology, Inc. | Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates |
US7078308B2 (en) | 2002-08-29 | 2006-07-18 | Micron Technology, Inc. | Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate |
TW591089B (en) * | 2001-08-09 | 2004-06-11 | Cheil Ind Inc | Slurry composition for use in chemical mechanical polishing of metal wiring |
US6953389B2 (en) * | 2001-08-09 | 2005-10-11 | Cheil Industries, Inc. | Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching |
US7077880B2 (en) * | 2004-01-16 | 2006-07-18 | Dupont Air Products Nanomaterials Llc | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization |
US7316603B2 (en) * | 2002-01-22 | 2008-01-08 | Cabot Microelectronics Corporation | Compositions and methods for tantalum CMP |
KR20060024775A (ko) * | 2003-05-12 | 2006-03-17 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 제2단계 구리 라이너 및 관련된 물질을 위한 cmp조성물및 그 이용방법 |
US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
US7112122B2 (en) * | 2003-09-17 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for removing conductive material from a microelectronic substrate |
US7419911B2 (en) * | 2003-11-10 | 2008-09-02 | Ekc Technology, Inc. | Compositions and methods for rapidly removing overfilled substrates |
US7153777B2 (en) * | 2004-02-20 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatuses for electrochemical-mechanical polishing |
US7253111B2 (en) * | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
US7566391B2 (en) | 2004-09-01 | 2009-07-28 | Micron Technology, Inc. | Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media |
US20060110923A1 (en) * | 2004-11-24 | 2006-05-25 | Zhendong Liu | Barrier polishing solution |
US7998335B2 (en) * | 2005-06-13 | 2011-08-16 | Cabot Microelectronics Corporation | Controlled electrochemical polishing method |
US7678702B2 (en) * | 2005-08-31 | 2010-03-16 | Air Products And Chemicals, Inc. | CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use |
US7803203B2 (en) | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
US20070075042A1 (en) * | 2005-10-05 | 2007-04-05 | Siddiqui Junaid A | Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method |
US20070218692A1 (en) * | 2006-01-31 | 2007-09-20 | Nissan Chemical Industries, Ltd. | Copper-based metal polishing compositions and polishing processes |
JP5529736B2 (ja) * | 2007-07-26 | 2014-06-25 | キャボット マイクロエレクトロニクス コーポレイション | 相変化材料を化学的機械的に研磨するための組成物及び方法 |
US7915071B2 (en) * | 2007-08-30 | 2011-03-29 | Dupont Air Products Nanomaterials, Llc | Method for chemical mechanical planarization of chalcogenide materials |
US20090124173A1 (en) * | 2007-11-09 | 2009-05-14 | Cabot Microelectronics Corporation | Compositions and methods for ruthenium and tantalum barrier cmp |
CA2796759C (en) * | 2010-04-19 | 2022-10-04 | The University Of Toledo | Aldose-ketose transformation for separation and/or chemical conversion of c6 and c5 sugars from biomass materials |
RU2589482C2 (ru) * | 2010-10-07 | 2016-07-10 | Басф Се | Водная полирующая композиция и способ химико-механического полирования подложек, имеющих структурированные или неструктурированные диэлектрические слои с низкой диэлектрической постоянной |
TWI502065B (zh) * | 2010-10-13 | 2015-10-01 | Entegris Inc | 抑制氮化鈦腐蝕之組成物及方法 |
US8546617B1 (en) | 2012-03-23 | 2013-10-01 | Empire Technology Development Llc | Dioxaborinanes and uses thereof |
US9073177B2 (en) * | 2012-07-31 | 2015-07-07 | Saint-Gobain Abrasives, Inc. | Abrasive article comprising abrasive particles of a composite composition |
IN2015DN00805A (de) * | 2012-07-31 | 2015-07-03 | Empire Technology Dev Llc | |
US9120938B2 (en) | 2012-07-31 | 2015-09-01 | Empire Technology Development Llc | Polymerizable organoboron alkyd resin anti fouling coatings |
WO2014143037A1 (en) * | 2013-03-15 | 2014-09-18 | William Brenden Carlson | Boron containing compounds and uses thereof |
CN103497128B (zh) * | 2013-09-04 | 2016-06-08 | 常州大学 | 一种合成对称二芳基二硫醚的方法 |
US10414947B2 (en) * | 2015-03-05 | 2019-09-17 | Cabot Microelectronics Corporation | Polishing composition containing ceria particles and method of use |
JP6564624B2 (ja) * | 2015-06-10 | 2019-08-21 | 株式会社ディスコ | 研削砥石 |
CN113412324B (zh) | 2018-12-03 | 2022-12-02 | 富士胶片电子材料美国有限公司 | 蚀刻组合物 |
CN109913133B (zh) * | 2019-03-29 | 2020-09-29 | 大连理工大学 | 一种钇铝石榴石晶体的高效高质量化学机械抛光液 |
US11499072B2 (en) | 2019-08-30 | 2022-11-15 | Saint-Gobain Ceramics & Plastics, Inc. | Composition and method for conducting a material removing operation |
CN114286846B (zh) | 2019-08-30 | 2023-06-06 | 圣戈本陶瓷及塑料股份有限公司 | 用于进行材料去除操作的流体组合物及方法 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB923580A (en) * | 1959-06-18 | 1963-04-10 | Standard Oil Co | Telomerization of unsaturated hydrocarbons with alkylene glycol borates and telomeric products obtained thereby |
FR2624519A1 (fr) * | 1987-12-09 | 1989-06-16 | Rhone Poulenc Chimie | Composition de polissage perfectionnee a base de cerium et son procede de preparation |
JP2586319B2 (ja) * | 1993-12-15 | 1997-02-26 | 日本電気株式会社 | 半導体基板の研磨方法 |
JP2600600B2 (ja) * | 1993-12-21 | 1997-04-16 | 日本電気株式会社 | 研磨剤とその製法及びそれを用いた半導体装置の製造方法 |
US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
US5840629A (en) * | 1995-12-14 | 1998-11-24 | Sematech, Inc. | Copper chemical mechanical polishing slurry utilizing a chromate oxidant |
US5700383A (en) * | 1995-12-21 | 1997-12-23 | Intel Corporation | Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide |
US5780358A (en) * | 1996-04-08 | 1998-07-14 | Chartered Semiconductor Manufacturing Ltd. | Method for chemical-mechanical polish (CMP) planarizing of cooper containing conductor layers |
US5840132A (en) * | 1996-04-24 | 1998-11-24 | Arch Development Corporation | Lubricated boride surfaces |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
MY133700A (en) * | 1996-05-15 | 2007-11-30 | Kobe Steel Ltd | Polishing fluid composition and polishing method |
TW416987B (en) * | 1996-06-05 | 2001-01-01 | Wako Pure Chem Ind Ltd | A composition for cleaning the semiconductor substrate surface |
US5827781A (en) * | 1996-07-17 | 1998-10-27 | Micron Technology, Inc. | Planarization slurry including a dispersant and method of using same |
US5916819A (en) * | 1996-07-17 | 1999-06-29 | Micron Technology, Inc. | Planarization fluid composition chelating agents and planarization method using same |
JP3507628B2 (ja) * | 1996-08-06 | 2004-03-15 | 昭和電工株式会社 | 化学的機械研磨用研磨組成物 |
US5692950A (en) * | 1996-08-08 | 1997-12-02 | Minnesota Mining And Manufacturing Company | Abrasive construction for semiconductor wafer modification |
US5783489A (en) * | 1996-09-24 | 1998-07-21 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US5738800A (en) * | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
SG54606A1 (en) | 1996-12-05 | 1998-11-16 | Fujimi Inc | Polishing composition |
US5954997A (en) * | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
US5756398A (en) * | 1997-03-17 | 1998-05-26 | Rodel, Inc. | Composition and method for polishing a composite comprising titanium |
US6194317B1 (en) | 1998-04-30 | 2001-02-27 | 3M Innovative Properties Company | Method of planarizing the upper surface of a semiconductor wafer |
US5770103A (en) * | 1997-07-08 | 1998-06-23 | Rodel, Inc. | Composition and method for polishing a composite comprising titanium |
US6190237B1 (en) | 1997-11-06 | 2001-02-20 | International Business Machines Corporation | pH-buffered slurry and use thereof for polishing |
US6174227B1 (en) * | 1997-11-07 | 2001-01-16 | Nikon Corporation | Polishing pad and polishing apparatus using the same |
JP2000013675A (ja) * | 1998-06-24 | 2000-01-14 | Seiko Epson Corp | デジタルカメラ |
JP4163788B2 (ja) | 1998-06-25 | 2008-10-08 | スピードファム株式会社 | 研磨用組成物及び研磨加工方法 |
TW455626B (en) * | 1998-07-23 | 2001-09-21 | Eternal Chemical Co Ltd | Chemical mechanical abrasive composition for use in semiconductor processing |
JP2000136375A (ja) | 1998-10-30 | 2000-05-16 | Okamoto Machine Tool Works Ltd | 研磨剤スラリ− |
US6276996B1 (en) * | 1998-11-10 | 2001-08-21 | Micron Technology, Inc. | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
US6169034B1 (en) | 1998-11-25 | 2001-01-02 | Advanced Micro Devices, Inc. | Chemically removable Cu CMP slurry abrasive |
US6083840A (en) * | 1998-11-25 | 2000-07-04 | Arch Specialty Chemicals, Inc. | Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys |
US6238592B1 (en) | 1999-03-10 | 2001-05-29 | 3M Innovative Properties Company | Working liquids and methods for modifying structured wafers suited for semiconductor fabrication |
-
2001
- 2001-10-24 US US10/033,152 patent/US6705926B2/en not_active Expired - Lifetime
-
2002
- 2002-09-24 WO PCT/US2002/031945 patent/WO2003035782A1/en active Application Filing
- 2002-09-24 AT AT02776164T patent/ATE431388T1/de not_active IP Right Cessation
- 2002-09-24 CN CNB028212541A patent/CN100425666C/zh not_active Expired - Fee Related
- 2002-09-24 EP EP02776164A patent/EP1448736B1/de not_active Expired - Lifetime
- 2002-09-24 JP JP2003538287A patent/JP2005507165A/ja active Pending
- 2002-09-24 DE DE60232356T patent/DE60232356D1/de not_active Expired - Lifetime
- 2002-10-24 TW TW091124689A patent/TWI232234B/zh not_active IP Right Cessation
-
2004
- 2004-03-16 US US10/801,316 patent/US7001253B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20040180612A1 (en) | 2004-09-16 |
US7001253B2 (en) | 2006-02-21 |
WO2003035782A1 (en) | 2003-05-01 |
ATE431388T1 (de) | 2009-05-15 |
EP1448736A1 (de) | 2004-08-25 |
CN1575325A (zh) | 2005-02-02 |
JP2005507165A (ja) | 2005-03-10 |
CN100425666C (zh) | 2008-10-15 |
US6705926B2 (en) | 2004-03-16 |
US20030077985A1 (en) | 2003-04-24 |
EP1448736B1 (de) | 2009-05-13 |
TWI232234B (en) | 2005-05-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60232356D1 (de) | ||
MY120573A (en) | Slurry comprising a ligand or chelating agent for polishing a surface. | |
TW200635704A (en) | Composition and method for polishing a sapphire surface | |
ATE214418T1 (de) | Pufferlösungen für suspensionen, verwendbar zum chemisch-mechanischen polieren | |
MY131030A (en) | Polishing pad with oriented pore structure | |
AU2002319814A1 (en) | Substituted 1h-dihydropyrazoles, their preparation and use | |
WO2000028586A3 (en) | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad | |
IL165462A0 (en) | Aqueous solution of non-colloidal silicic acid an d boric acid | |
WO2004072199A3 (en) | Mixed-abrasive polishing composition and method for using the same | |
WO2004076574A3 (en) | Cmp composition comprising a sulfonic acid and a method for polishing noble metals | |
IL155856A0 (en) | Abrasive article having a window system for polishing wafers, and methods | |
MY105865A (en) | Fine polishing compound for wafer | |
AU6379500A (en) | Chemical mechanical polishing systems and methods for their use | |
WO2002026757A3 (en) | Modulation of immunostimulatory activity of immunostimulatory oligonucleotide analogs by positional chemical changes | |
MY153685A (en) | Composition and method to polish silicon nitride | |
HK1078850A1 (en) | Novel alkoxypyridine-derivatives | |
EP1211024A3 (de) | Polierverfahren | |
TW200617151A (en) | Polishing composition and polishing method using the same | |
EP1080839A3 (de) | Polier- und Abrichtvorrichtung | |
TW200621960A (en) | Polishing composition and polishing method using the same | |
WO2003059916A8 (en) | Methods for the preparation of alkyl diaryl borinates and complexed diarylborinic acids | |
MY138857A (en) | High selectivity colloidal silica slurry | |
SG168401A1 (en) | Catalyst and use thereof | |
IL164606A0 (en) | Novel compounds | |
PL336996A1 (en) | Guanidilating compounds |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |