ATE431388T1 - Bor enthaltendes poliersystem und dessen verfahren - Google Patents
Bor enthaltendes poliersystem und dessen verfahrenInfo
- Publication number
- ATE431388T1 ATE431388T1 AT02776164T AT02776164T ATE431388T1 AT E431388 T1 ATE431388 T1 AT E431388T1 AT 02776164 T AT02776164 T AT 02776164T AT 02776164 T AT02776164 T AT 02776164T AT E431388 T1 ATE431388 T1 AT E431388T1
- Authority
- AT
- Austria
- Prior art keywords
- polishing system
- boric acid
- boron containing
- containing polishing
- chemical
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1002—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
- Y10T156/1051—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina by folding
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/033,152 US6705926B2 (en) | 2001-10-24 | 2001-10-24 | Boron-containing polishing system and method |
PCT/US2002/031945 WO2003035782A1 (en) | 2001-10-24 | 2002-09-24 | Boron-containing polishing system and method |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE431388T1 true ATE431388T1 (de) | 2009-05-15 |
Family
ID=21868825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02776164T ATE431388T1 (de) | 2001-10-24 | 2002-09-24 | Bor enthaltendes poliersystem und dessen verfahren |
Country Status (8)
Country | Link |
---|---|
US (2) | US6705926B2 (de) |
EP (1) | EP1448736B1 (de) |
JP (1) | JP2005507165A (de) |
CN (1) | CN100425666C (de) |
AT (1) | ATE431388T1 (de) |
DE (1) | DE60232356D1 (de) |
TW (1) | TWI232234B (de) |
WO (1) | WO2003035782A1 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7078308B2 (en) | 2002-08-29 | 2006-07-18 | Micron Technology, Inc. | Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate |
US7112121B2 (en) * | 2000-08-30 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
US7220166B2 (en) * | 2000-08-30 | 2007-05-22 | Micron Technology, Inc. | Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate |
US7153195B2 (en) * | 2000-08-30 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatus for selectively removing conductive material from a microelectronic substrate |
US7192335B2 (en) * | 2002-08-29 | 2007-03-20 | Micron Technology, Inc. | Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates |
US7129160B2 (en) * | 2002-08-29 | 2006-10-31 | Micron Technology, Inc. | Method for simultaneously removing multiple conductive materials from microelectronic substrates |
TW591089B (en) * | 2001-08-09 | 2004-06-11 | Cheil Ind Inc | Slurry composition for use in chemical mechanical polishing of metal wiring |
US6953389B2 (en) * | 2001-08-09 | 2005-10-11 | Cheil Industries, Inc. | Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching |
US7077880B2 (en) * | 2004-01-16 | 2006-07-18 | Dupont Air Products Nanomaterials Llc | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization |
US7316603B2 (en) * | 2002-01-22 | 2008-01-08 | Cabot Microelectronics Corporation | Compositions and methods for tantalum CMP |
KR20060024775A (ko) * | 2003-05-12 | 2006-03-17 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 제2단계 구리 라이너 및 관련된 물질을 위한 cmp조성물및 그 이용방법 |
US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
US7112122B2 (en) * | 2003-09-17 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for removing conductive material from a microelectronic substrate |
US7419911B2 (en) * | 2003-11-10 | 2008-09-02 | Ekc Technology, Inc. | Compositions and methods for rapidly removing overfilled substrates |
US7153777B2 (en) | 2004-02-20 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatuses for electrochemical-mechanical polishing |
US7253111B2 (en) * | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
US7566391B2 (en) * | 2004-09-01 | 2009-07-28 | Micron Technology, Inc. | Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media |
US20060110923A1 (en) * | 2004-11-24 | 2006-05-25 | Zhendong Liu | Barrier polishing solution |
US7998335B2 (en) * | 2005-06-13 | 2011-08-16 | Cabot Microelectronics Corporation | Controlled electrochemical polishing method |
US7678702B2 (en) * | 2005-08-31 | 2010-03-16 | Air Products And Chemicals, Inc. | CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use |
US7803203B2 (en) | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
US20070075042A1 (en) * | 2005-10-05 | 2007-04-05 | Siddiqui Junaid A | Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method |
US20070218692A1 (en) * | 2006-01-31 | 2007-09-20 | Nissan Chemical Industries, Ltd. | Copper-based metal polishing compositions and polishing processes |
US20100190339A1 (en) * | 2007-07-26 | 2010-07-29 | Zhan Chen | Compositions and methods for chemical-mechanical polishing of phase change materials |
US7915071B2 (en) * | 2007-08-30 | 2011-03-29 | Dupont Air Products Nanomaterials, Llc | Method for chemical mechanical planarization of chalcogenide materials |
US20090124173A1 (en) * | 2007-11-09 | 2009-05-14 | Cabot Microelectronics Corporation | Compositions and methods for ruthenium and tantalum barrier cmp |
WO2011133536A1 (en) * | 2010-04-19 | 2011-10-27 | The University Of Toledo | Aldose-ketose transformation for separation and/or chemical conversion of c6 and c5 sugars from biomass materials |
WO2012046179A1 (en) * | 2010-10-07 | 2012-04-12 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers |
US9416338B2 (en) * | 2010-10-13 | 2016-08-16 | Advanced Technology Materials, Inc. | Composition for and method of suppressing titanium nitride corrosion |
US8546617B1 (en) | 2012-03-23 | 2013-10-01 | Empire Technology Development Llc | Dioxaborinanes and uses thereof |
IN2015DN00805A (de) * | 2012-07-31 | 2015-07-03 | Empire Technology Dev Llc | |
US9073177B2 (en) * | 2012-07-31 | 2015-07-07 | Saint-Gobain Abrasives, Inc. | Abrasive article comprising abrasive particles of a composite composition |
US9120938B2 (en) | 2012-07-31 | 2015-09-01 | Empire Technology Development Llc | Polymerizable organoboron alkyd resin anti fouling coatings |
CN105209556B (zh) * | 2013-03-15 | 2017-11-14 | 英派尔科技开发有限公司 | 含硼化合物和其用途 |
CN103497128B (zh) * | 2013-09-04 | 2016-06-08 | 常州大学 | 一种合成对称二芳基二硫醚的方法 |
US10414947B2 (en) * | 2015-03-05 | 2019-09-17 | Cabot Microelectronics Corporation | Polishing composition containing ceria particles and method of use |
JP6564624B2 (ja) * | 2015-06-10 | 2019-08-21 | 株式会社ディスコ | 研削砥石 |
KR20210097749A (ko) | 2018-12-03 | 2021-08-09 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 에칭 조성물 |
CN109913133B (zh) * | 2019-03-29 | 2020-09-29 | 大连理工大学 | 一种钇铝石榴石晶体的高效高质量化学机械抛光液 |
JP7361204B2 (ja) | 2019-08-30 | 2023-10-13 | サン-ゴバン セラミックス アンド プラスティクス,インコーポレイティド | 材料除去作業を行うための流体組成物及び方法 |
EP4022001A4 (de) | 2019-08-30 | 2023-12-27 | Saint-Gobain Ceramics & Plastics Inc. | Zusammensetzung und verfahren zur durchführung eines materialentfernungsvorgangs |
Family Cites Families (34)
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GB923580A (en) * | 1959-06-18 | 1963-04-10 | Standard Oil Co | Telomerization of unsaturated hydrocarbons with alkylene glycol borates and telomeric products obtained thereby |
FR2624519A1 (fr) * | 1987-12-09 | 1989-06-16 | Rhone Poulenc Chimie | Composition de polissage perfectionnee a base de cerium et son procede de preparation |
JP2586319B2 (ja) * | 1993-12-15 | 1997-02-26 | 日本電気株式会社 | 半導体基板の研磨方法 |
JP2600600B2 (ja) * | 1993-12-21 | 1997-04-16 | 日本電気株式会社 | 研磨剤とその製法及びそれを用いた半導体装置の製造方法 |
US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
US5840629A (en) * | 1995-12-14 | 1998-11-24 | Sematech, Inc. | Copper chemical mechanical polishing slurry utilizing a chromate oxidant |
US5700383A (en) * | 1995-12-21 | 1997-12-23 | Intel Corporation | Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide |
US5780358A (en) * | 1996-04-08 | 1998-07-14 | Chartered Semiconductor Manufacturing Ltd. | Method for chemical-mechanical polish (CMP) planarizing of cooper containing conductor layers |
US5840132A (en) * | 1996-04-24 | 1998-11-24 | Arch Development Corporation | Lubricated boride surfaces |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
MY133700A (en) * | 1996-05-15 | 2007-11-30 | Kobe Steel Ltd | Polishing fluid composition and polishing method |
TW416987B (en) * | 1996-06-05 | 2001-01-01 | Wako Pure Chem Ind Ltd | A composition for cleaning the semiconductor substrate surface |
US5916819A (en) * | 1996-07-17 | 1999-06-29 | Micron Technology, Inc. | Planarization fluid composition chelating agents and planarization method using same |
US5827781A (en) * | 1996-07-17 | 1998-10-27 | Micron Technology, Inc. | Planarization slurry including a dispersant and method of using same |
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US5692950A (en) * | 1996-08-08 | 1997-12-02 | Minnesota Mining And Manufacturing Company | Abrasive construction for semiconductor wafer modification |
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US5738800A (en) * | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
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US5756398A (en) * | 1997-03-17 | 1998-05-26 | Rodel, Inc. | Composition and method for polishing a composite comprising titanium |
US6194317B1 (en) | 1998-04-30 | 2001-02-27 | 3M Innovative Properties Company | Method of planarizing the upper surface of a semiconductor wafer |
US5770103A (en) * | 1997-07-08 | 1998-06-23 | Rodel, Inc. | Composition and method for polishing a composite comprising titanium |
US6190237B1 (en) | 1997-11-06 | 2001-02-20 | International Business Machines Corporation | pH-buffered slurry and use thereof for polishing |
US6174227B1 (en) * | 1997-11-07 | 2001-01-16 | Nikon Corporation | Polishing pad and polishing apparatus using the same |
JP2000013675A (ja) * | 1998-06-24 | 2000-01-14 | Seiko Epson Corp | デジタルカメラ |
JP4163788B2 (ja) | 1998-06-25 | 2008-10-08 | スピードファム株式会社 | 研磨用組成物及び研磨加工方法 |
TW455626B (en) * | 1998-07-23 | 2001-09-21 | Eternal Chemical Co Ltd | Chemical mechanical abrasive composition for use in semiconductor processing |
JP2000136375A (ja) | 1998-10-30 | 2000-05-16 | Okamoto Machine Tool Works Ltd | 研磨剤スラリ− |
US6276996B1 (en) | 1998-11-10 | 2001-08-21 | Micron Technology, Inc. | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
US6083840A (en) * | 1998-11-25 | 2000-07-04 | Arch Specialty Chemicals, Inc. | Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys |
US6169034B1 (en) | 1998-11-25 | 2001-01-02 | Advanced Micro Devices, Inc. | Chemically removable Cu CMP slurry abrasive |
US6238592B1 (en) | 1999-03-10 | 2001-05-29 | 3M Innovative Properties Company | Working liquids and methods for modifying structured wafers suited for semiconductor fabrication |
-
2001
- 2001-10-24 US US10/033,152 patent/US6705926B2/en not_active Expired - Lifetime
-
2002
- 2002-09-24 AT AT02776164T patent/ATE431388T1/de not_active IP Right Cessation
- 2002-09-24 WO PCT/US2002/031945 patent/WO2003035782A1/en active Application Filing
- 2002-09-24 CN CNB028212541A patent/CN100425666C/zh not_active Expired - Fee Related
- 2002-09-24 EP EP02776164A patent/EP1448736B1/de not_active Expired - Lifetime
- 2002-09-24 JP JP2003538287A patent/JP2005507165A/ja active Pending
- 2002-09-24 DE DE60232356T patent/DE60232356D1/de not_active Expired - Lifetime
- 2002-10-24 TW TW091124689A patent/TWI232234B/zh not_active IP Right Cessation
-
2004
- 2004-03-16 US US10/801,316 patent/US7001253B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20040180612A1 (en) | 2004-09-16 |
CN1575325A (zh) | 2005-02-02 |
US6705926B2 (en) | 2004-03-16 |
JP2005507165A (ja) | 2005-03-10 |
TWI232234B (en) | 2005-05-11 |
CN100425666C (zh) | 2008-10-15 |
US20030077985A1 (en) | 2003-04-24 |
US7001253B2 (en) | 2006-02-21 |
EP1448736A1 (de) | 2004-08-25 |
WO2003035782A1 (en) | 2003-05-01 |
DE60232356D1 (de) | 2009-06-25 |
EP1448736B1 (de) | 2009-05-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |