CN100419953C - 基板处理装置和基板处理方法 - Google Patents

基板处理装置和基板处理方法 Download PDF

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Publication number
CN100419953C
CN100419953C CNB2006100885369A CN200610088536A CN100419953C CN 100419953 C CN100419953 C CN 100419953C CN B2006100885369 A CNB2006100885369 A CN B2006100885369A CN 200610088536 A CN200610088536 A CN 200610088536A CN 100419953 C CN100419953 C CN 100419953C
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China
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heat
substrate
conducting gas
loading stage
pressure
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Expired - Fee Related
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CNB2006100885369A
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English (en)
Chinese (zh)
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CN1873914A (zh
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中村博
贝瀬精一
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CNB2006100885369A 2005-06-02 2006-06-02 基板处理装置和基板处理方法 Expired - Fee Related CN100419953C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005163263A JP4594800B2 (ja) 2005-06-02 2005-06-02 基板処理方法、基板処理プログラム及び記憶媒体
JP2005163263 2005-06-02
JP2005-163263 2005-06-02

Publications (2)

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CN1873914A CN1873914A (zh) 2006-12-06
CN100419953C true CN100419953C (zh) 2008-09-17

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CNB2006100885369A Expired - Fee Related CN100419953C (zh) 2005-06-02 2006-06-02 基板处理装置和基板处理方法

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JP (1) JP4594800B2 (enrdf_load_stackoverflow)
CN (1) CN100419953C (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4985031B2 (ja) * 2007-03-29 2012-07-25 東京エレクトロン株式会社 真空処理装置、真空処理装置の運転方法及び記憶媒体
US8705010B2 (en) 2007-07-13 2014-04-22 Mapper Lithography Ip B.V. Lithography system, method of clamping and wafer table
TWI514090B (zh) 2007-07-13 2015-12-21 Mapper Lithography Ip Bv 微影系統及用於支撐晶圓的晶圓台
JP5238224B2 (ja) * 2007-11-06 2013-07-17 東京エレクトロン株式会社 逆止弁およびそれを用いた基板処理装置
CN102364700B (zh) * 2011-10-26 2013-03-27 常州天合光能有限公司 太阳能电池rie工艺温度补偿方法
JP6063803B2 (ja) * 2013-04-15 2017-01-18 東京エレクトロン株式会社 真空装置及びバルブ制御方法
US10359769B2 (en) * 2017-09-15 2019-07-23 Applied Materials, Inc. Substrate routing and throughput modeling
CN109755163B (zh) * 2017-11-06 2021-01-29 北京北方华创微电子装备有限公司 腔室装卸载基片的方法
WO2019199641A1 (en) * 2018-04-12 2019-10-17 Lam Research Corporation Determining and controlling substrate temperature during substrate processing
CN110571118B (zh) * 2018-06-06 2022-03-22 北京北方华创微电子装备有限公司 流量阈值的确定方法、控制装置及半导体加工设备
JP7232651B2 (ja) * 2019-01-25 2023-03-03 東京エレクトロン株式会社 熱媒体の制御方法および熱媒体制御装置
JP7546364B2 (ja) * 2020-02-19 2024-09-06 東京エレクトロン株式会社 基板処理方法、ガス流評価用基板及び基板処理装置
CN116475025B (zh) * 2023-06-21 2023-08-18 深圳德森精密设备有限公司 一种加工轨迹的制定方法、加工系统、处理器和存储介质

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010016302A1 (en) * 1999-12-28 2001-08-23 Nikon Corporation Wafer chucks allowing controlled reduction of substrate heating and rapid substrate exchange
US6320736B1 (en) * 1999-05-17 2001-11-20 Applied Materials, Inc. Chuck having pressurized zones of heat transfer gas
US6532796B1 (en) * 1997-02-21 2003-03-18 Anelva Corporation Method of substrate temperature control and method of assessing substrate temperature controllability

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000232098A (ja) * 2000-01-25 2000-08-22 Hitachi Ltd 試料温度制御方法及び真空処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6532796B1 (en) * 1997-02-21 2003-03-18 Anelva Corporation Method of substrate temperature control and method of assessing substrate temperature controllability
US6320736B1 (en) * 1999-05-17 2001-11-20 Applied Materials, Inc. Chuck having pressurized zones of heat transfer gas
US20010016302A1 (en) * 1999-12-28 2001-08-23 Nikon Corporation Wafer chucks allowing controlled reduction of substrate heating and rapid substrate exchange

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Publication number Publication date
CN1873914A (zh) 2006-12-06
JP4594800B2 (ja) 2010-12-08
JP2006339457A (ja) 2006-12-14

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