CN102364700B - 太阳能电池rie工艺温度补偿方法 - Google Patents
太阳能电池rie工艺温度补偿方法 Download PDFInfo
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- CN102364700B CN102364700B CN2011103294427A CN201110329442A CN102364700B CN 102364700 B CN102364700 B CN 102364700B CN 2011103294427 A CN2011103294427 A CN 2011103294427A CN 201110329442 A CN201110329442 A CN 201110329442A CN 102364700 B CN102364700 B CN 102364700B
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- 238000000034 method Methods 0.000 title claims abstract description 83
- 238000001020 plasma etching Methods 0.000 title description 16
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000002310 reflectometry Methods 0.000 claims abstract description 9
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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CN2011103294427A CN102364700B (zh) | 2011-10-26 | 2011-10-26 | 太阳能电池rie工艺温度补偿方法 |
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CN2011103294427A CN102364700B (zh) | 2011-10-26 | 2011-10-26 | 太阳能电池rie工艺温度补偿方法 |
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CN102364700A CN102364700A (zh) | 2012-02-29 |
CN102364700B true CN102364700B (zh) | 2013-03-27 |
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Families Citing this family (2)
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CN102903796B (zh) * | 2012-10-22 | 2015-05-20 | 山东力诺太阳能电力股份有限公司 | 一种晶体硅太阳能电池rie制绒装置 |
CN115111929B (zh) * | 2021-12-30 | 2023-01-10 | 拉普拉斯(无锡)半导体科技有限公司 | 一种高温硅片间接控温方法 |
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JPH01161868A (ja) * | 1987-12-18 | 1989-06-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH06104209A (ja) * | 1992-09-18 | 1994-04-15 | Hitachi Ltd | プラズマ処理装置 |
JPH1161868A (ja) * | 1997-08-13 | 1999-03-05 | Kobe Steel Ltd | 繊維強化樹脂製マンホール蓋 |
US6156629A (en) * | 1998-10-01 | 2000-12-05 | Taiwan Semiconductor Manufacturing Company | Method for patterning a polysilicon gate in deep submicron technology |
JP4594800B2 (ja) * | 2005-06-02 | 2010-12-08 | 東京エレクトロン株式会社 | 基板処理方法、基板処理プログラム及び記憶媒体 |
WO2009158552A1 (en) * | 2008-06-26 | 2009-12-30 | Carben Semicon Limited | Patterned integrated circuit and method of production thereof |
WO2011022648A1 (en) * | 2009-08-21 | 2011-02-24 | First Solar, Inc. | Pyrometer |
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Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINASOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. |
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