CN102364700A - 太阳能电池rie工艺温度补偿方法 - Google Patents
太阳能电池rie工艺温度补偿方法 Download PDFInfo
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- CN102364700A CN102364700A CN2011103294427A CN201110329442A CN102364700A CN 102364700 A CN102364700 A CN 102364700A CN 2011103294427 A CN2011103294427 A CN 2011103294427A CN 201110329442 A CN201110329442 A CN 201110329442A CN 102364700 A CN102364700 A CN 102364700A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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CN2011103294427A CN102364700B (zh) | 2011-10-26 | 2011-10-26 | 太阳能电池rie工艺温度补偿方法 |
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CN2011103294427A CN102364700B (zh) | 2011-10-26 | 2011-10-26 | 太阳能电池rie工艺温度补偿方法 |
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CN102364700A true CN102364700A (zh) | 2012-02-29 |
CN102364700B CN102364700B (zh) | 2013-03-27 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102903796A (zh) * | 2012-10-22 | 2013-01-30 | 山东力诺太阳能电力股份有限公司 | 一种晶体硅太阳能电池rie制绒装置 |
WO2023123629A1 (zh) * | 2021-12-30 | 2023-07-06 | 拉普拉斯(无锡)半导体科技有限公司 | 一种高温硅片间接控温方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01161868A (ja) * | 1987-12-18 | 1989-06-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH06104209A (ja) * | 1992-09-18 | 1994-04-15 | Hitachi Ltd | プラズマ処理装置 |
JPH1161868A (ja) * | 1997-08-13 | 1999-03-05 | Kobe Steel Ltd | 繊維強化樹脂製マンホール蓋 |
US6156629A (en) * | 1998-10-01 | 2000-12-05 | Taiwan Semiconductor Manufacturing Company | Method for patterning a polysilicon gate in deep submicron technology |
CN1873914A (zh) * | 2005-06-02 | 2006-12-06 | 东京毅力科创株式会社 | 基板处理方法、基板处理程序及存储介质 |
WO2009158552A1 (en) * | 2008-06-26 | 2009-12-30 | Carben Semicon Limited | Patterned integrated circuit and method of production thereof |
US20110046916A1 (en) * | 2009-08-21 | 2011-02-24 | First Solar, Inc. | Pyrometer |
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2011
- 2011-10-26 CN CN2011103294427A patent/CN102364700B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01161868A (ja) * | 1987-12-18 | 1989-06-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH06104209A (ja) * | 1992-09-18 | 1994-04-15 | Hitachi Ltd | プラズマ処理装置 |
JPH1161868A (ja) * | 1997-08-13 | 1999-03-05 | Kobe Steel Ltd | 繊維強化樹脂製マンホール蓋 |
US6156629A (en) * | 1998-10-01 | 2000-12-05 | Taiwan Semiconductor Manufacturing Company | Method for patterning a polysilicon gate in deep submicron technology |
CN1873914A (zh) * | 2005-06-02 | 2006-12-06 | 东京毅力科创株式会社 | 基板处理方法、基板处理程序及存储介质 |
WO2009158552A1 (en) * | 2008-06-26 | 2009-12-30 | Carben Semicon Limited | Patterned integrated circuit and method of production thereof |
US20110046916A1 (en) * | 2009-08-21 | 2011-02-24 | First Solar, Inc. | Pyrometer |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102903796A (zh) * | 2012-10-22 | 2013-01-30 | 山东力诺太阳能电力股份有限公司 | 一种晶体硅太阳能电池rie制绒装置 |
CN102903796B (zh) * | 2012-10-22 | 2015-05-20 | 山东力诺太阳能电力股份有限公司 | 一种晶体硅太阳能电池rie制绒装置 |
WO2023123629A1 (zh) * | 2021-12-30 | 2023-07-06 | 拉普拉斯(无锡)半导体科技有限公司 | 一种高温硅片间接控温方法 |
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Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINA SOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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