CN100419501C - Apparatus and method for processing substrate - Google Patents
Apparatus and method for processing substrate Download PDFInfo
- Publication number
- CN100419501C CN100419501C CNB2004100640625A CN200410064062A CN100419501C CN 100419501 C CN100419501 C CN 100419501C CN B2004100640625 A CNB2004100640625 A CN B2004100640625A CN 200410064062 A CN200410064062 A CN 200410064062A CN 100419501 C CN100419501 C CN 100419501C
- Authority
- CN
- China
- Prior art keywords
- substrate
- nozzle
- treating fluid
- short transverse
- upright state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/54—Arrangements for reducing warping-twist
Abstract
Provided is a treatment apparatus with which a substrate to be conveyed in an erected state can be treated with a treating liquid. The treatment apparatus is provided with a conveying means for conveying the substrate in the erected state in a predetermined direction and an etching treatment part 18 for jetting the treating liquid toward the substrate to be conveyed in the erected state by the conveying means. The etching treatment part 18 is provided with a plurality of nozzles 21a-21d for jetting the treating liquid toward the surface of the substrate. The nozzles 21a-21d are arranged at the predetermined intervals in the height direction of the substrate so that the nozzle positioned on the upper part in the height direction is positioned at the back of the nozzle positioned on the lower part in the substrate conveying direction.
Description
Technical field
The present invention relates to the treating apparatus and the disposal route of substrate suitable under the situation of utilizing the treating fluid treatment substrate.
Background technology
Form circuitous pattern on the substrate of the glass in being used in liquid crystal indicator.To on substrate, form circuitous pattern, just adopt imprint lithography.Lithography (lithography) technology applies resist as known on aforesaid substrate, on this resist by the mask that has formed circuitous pattern irradiates light.
Then, remove the part that does not have irradiates light of resist or the part of having shone light, the part of having removed resist of etching substrates after the etching, is removed a series of operation of resist etc. by repeated multiple times, just forms circuitous pattern on aforesaid substrate.
In such imprint lithography, need after utilizing developer solution, etching solution or etching on the aforesaid substrate, remove the operation of the treating fluid treatment substrates such as stripper of resist, also have to utilize operation that the cleaning fluid as treating fluid cleans etc. in addition, also need adhere to the drying process that remains in the cleaning fluid on the substrate removing after the cleaning.
In the prior art, substrate is being carried out under the situation of above-mentioned a series of processing, aforesaid substrate is under horizontality, utilize the carrying roller of horizontal arrangement axis, be moved to successively in the container handling separately, then, utilize treating fluid to handle, perhaps spray pressure gas and carry out dried.
But the substrate that is used in the glass of liquid crystal indicator recently is tending towards maximizing and slimming.Therefore, if horizontal carrying substrate, it is big that the deflection of the substrate between the carrying roller just becomes, so produced the situation that can not carry out the processing in each container handling equably on the whole plate face of substrate.
Substrate is if maximize, and the carrying axle that is provided with the carrying roller of carrying this substrate is just elongated.And substrate maximizes, and the amount that supplies to the treating fluid on the substrate just increases, and the load that is applied on the above-mentioned carrying axle according to the amount of the treating fluid on the substrate just becomes big, so the deflection of carrying axle just increases.Therefore, substrate generation deflection just can not be handled sometimes uniformly owing to carry shaft flexing.
Therefore, when utilizing the treating fluid treatment substrate, in order to prevent the weight deflection of aforesaid substrate because for the treatment of fluid, just consider to make substrate erect the angle of regulation, for example the angle of 70 degree is carried.If carry under the upright state that substrate is erected, treating fluid just is not trapped on the plate face of substrate, just can successfully flow to the below from the top, so can prevent the weight substrate deflection because for the treatment of fluid.
Supplying with to the substrate of upright state under the situation for the treatment of fluid, for example, considering to utilize nozzle, respectively from a plurality of local treating fluids of supplying with of the above-below direction of substrate.But, utilizing a plurality of nozzles only to supply with in the treating fluid, after the treating fluid that supplies to substrate top has been handled the top of substrate to the plate face of substrate, mix with the treating fluid that supplies to the substrate bottom, reactive variation, therefore, the processing of substrate bottom is poorer than top sometimes.And the substrate top of flowing through is different because of difference in height with the speed of the treating fluid of bottom, therefore, has just produced because of its velocity contrast problem of the upper and lower of treatment substrate equably.
Summary of the invention
The purpose of this invention is to provide a kind for the treatment of apparatus, under the situation about under upright state, handling with treating fluid behind the carrying substrate, can integral body all roughly handle this substrate equably.
In order to solve the problems of the technologies described above, the treating apparatus of a kind of substrate of the present invention utilizes the treating fluid treatment substrate, it is characterized in that having:
Handling device is carried aforesaid substrate to prescribed direction under upright state;
Handling part, to the substrate inject process liquid that utilizes this Handling device under upright state, to carry,
Above-mentioned handling part has a plurality of nozzles to the plate face inject process liquid of aforesaid substrate, these a plurality of nozzles in accordance with regulations arranged spaced on the short transverse of substrate, and the nozzle that is positioned at the short transverse top is in the rear of the carrying direction of aforesaid substrate than the nozzle that is positioned at the below.
The treating apparatus of a kind of substrate of the present invention utilizes the treating fluid treatment substrate, it is characterized in that having:
Handling device is carried aforesaid substrate to prescribed direction under upright state;
A plurality of nozzles, to the plate face inject process liquid of the substrate that utilizes this Handling device under upright state, to carry,
Above-mentioned a plurality of nozzle arrangement are become, and along the short transverse of aforesaid substrate, and spacing is along with become big downwards successively from the short transverse top.
The treating apparatus of a kind of substrate of the present invention utilizes the treating fluid treatment substrate, it is characterized in that having:
Handling device is carried aforesaid substrate to prescribed direction under upright state;
A plurality of nozzles, to the plate face inject process liquid of the substrate that utilizes this Handling device under upright state, to carry,
Above-mentioned a plurality of nozzle arrangement are become,, and be supplied in the pressure of the treating fluid in the nozzle of short transverse top, set highly than the pressure of the treating fluid in the nozzle that is supplied in the below along the short transverse of aforesaid substrate arranged spaced in accordance with regulations.
The treating apparatus of a kind of substrate of the present invention utilizes the treating fluid treatment substrate, it is characterized in that having:
Handling device is carried aforesaid substrate to prescribed direction under upright state;
A plurality of nozzles, to the plate face inject process liquid of the substrate that utilizes this Handling device under upright state, to carry,
Above-mentioned a plurality of nozzle arrangement are become,, and be supplied in the flow of the treating fluid in the nozzle of short transverse top, get greatly than the flow set of the treating fluid in the nozzle that is supplied in the below along the short transverse of aforesaid substrate arranged spaced in accordance with regulations.
The disposal route of a kind of substrate of the present invention disposes a plurality of nozzles along the short transverse of substrate, from these nozzle ejection treating fluid treatment substrates, it is characterized in that having:
The carrying operation is carried aforesaid substrate to prescribed direction under upright state;
Jeting process, the substrate inject process liquid of under upright state, carrying from a plurality of nozzles, and make after each nozzle ejection the zone of the treating fluid separately under the plate surface current of substrate not overlapping.
The disposal route of a kind of substrate of the present invention disposes a plurality of nozzles along the short transverse of substrate, from these nozzle ejection treating fluid treatment substrates, it is characterized in that having:
The carrying operation is carried aforesaid substrate to prescribed direction under upright state;
Jeting process, the substrate inject process liquid of under upright state, carrying from above-mentioned a plurality of nozzles, and make treating fluid in the nozzle on the short transverse top that is supplied in aforesaid substrate, bigger than the pressure and at least one side in the flow of the treating fluid in the nozzle that is supplied in the bottom.
The effect of invention is as follows:
According to the present invention, because the treating fluid on from each nozzle ejection to substrate can not mix and flow to the bottom from the top of substrate, therefore, from the treating fluid of separately nozzle ejection, do not mix the treating fluid of other nozzle ejection, reactivity is variation not.Therefore, just can utilize treating fluid, roughly handle the substrate of under upright state, carrying equably from a plurality of nozzle ejection.
According to the present invention because the upper and lower inject process liquid of the substrate that can roughly under upright state, carry equably, therefore, just can be roughly the upper and lower of treatment substrate equably.
Description of drawings
Fig. 1 is the oblique view that the schematic configuration of the treating apparatus that first embodiment of the present invention relates to is shown.
Fig. 2 is the outboard profile of configuration status that the nozzle of etch processes portion is shown.
Fig. 3 is the front view (FV) of configuration status that the nozzle of etch processes portion is shown.
Fig. 4 shows the chart of the distance that the etching solution in the transporting velocity of substrate and the substrate bottom different corresponding to the height and position of nozzle moves to the board carrying direction.
Fig. 5 shows the supply height for etching solution, and the speed of the etching solution of substrate bottom and etching solution arrive the chart of the time relation of substrate bottom.
The figure in the zone that the etching solution that goes out from each nozzle ejection when Fig. 6 shows board carrying speed and is 2000m/sec is flowed through.
The figure in the zone that the etching solution that goes out from each nozzle ejection when Fig. 7 shows board carrying speed and is 4000m/sec is flowed through.
The figure in the zone that the etching solution that goes out from each nozzle ejection when Fig. 8 shows board carrying speed and is 6000m/sec is flowed through.
Fig. 9 is the outboard profile that the relation of substrate that second embodiment of the present invention relates to and nozzle is shown.
Figure 10 is the outboard profile that the relation of substrate that the 3rd embodiment of the present invention relates to and nozzle is shown.
Figure 11 is the outboard profile that the relation of substrate that the 4th embodiment of the present invention relates to and nozzle is shown.
Figure 12 is the outboard profile that the relation of substrate that the 5th embodiment of the present invention relates to and nozzle is shown.
Figure 13 is the front view (FV) that the relation of substrate shown in Figure 12 and nozzle is shown.
Figure 14 is the outboard profile that the relation of substrate that the 6th embodiment of the present invention relates to and nozzle is shown.
Figure 15 is the outboard profile that the relation of substrate that the 7th embodiment of the present invention relates to and nozzle is shown.
Figure 16 illustrates the key diagram of drawing the relation for the treatment of fluid that para-curve sprays and substrate from nozzle.
Embodiment
Below, with reference to description of drawings an embodiment of the invention.
Fig. 1 to Fig. 8 illustrates first embodiment of the present invention.Treating apparatus shown in Fig. 1 has base station 1.At this vertical end above base station 1, lateral separation is being provided with loading part 2 and unloading portion 3.Described loading part 2 and unloading portion 3 have the support unit 4 of rectangular plate shape, and this support unit 4 as fulcrum, can drive the bottom along the lateral shake of the base station shown in the arrow 1.
In the bottom of loading part 2 with a side (loading part 2 only is shown among the figure) of unloading portion 3, at interval a plurality of lower support rollers 5 are being set in accordance with regulations, a plurality of upper support rollers 6 are being set in accordance with regulations at interval in the upper end.Drive lower support roller 5 by not shown drive source rotation.
In upright state, never illustrated supply unit is supplied with untreated substrate W to above-mentioned loading part 2.The substrate W lower end that has supplied to the portion of adorning 2 combines support with lower support roller 5, and the upper end combines support with upper support roller 6.Then, by driving lower support roller 5, untreated substrate W is supplied in the treating stations described later to the prescribed direction rotation.
Substrate W after handling in above-mentioned treating stations is taken out of in the above-mentioned unloading portion 3.The substrate W lower end of taking out of in the unloading portion 3 combines support with lower support roller 5, and the upper end combines support with upper support roller 6.
By the part that is covered with above-mentioned base station 1 with the lid shown in the dot-and-dash line 7 except loading part 2 and unloading portion 3.In this lid 7, along base station 1 vertically, single file is being provided with as the fixed station 8 for the treatment of stations with equally as the turning base 9 for the treatment of stations successively.
On a side and other sides of said fixing station 8 and turning base 9, Handling device 10 is being set respectively.This Handling device 10 has the driven roller 13 that transversely is provided with at interval in accordance with regulations in the bottom at each station 8,9.Drive this driven roller 13 by drive source 12 rotations.Above each driven roller 13, a plurality of backing rolls 14 that are provided with at interval in accordance with regulations along above-below direction respectively are being set, be 3 in the present embodiment.
Above-mentioned driven roller 13 no detailed diagrams, but on outer peripheral face, formed in the V ditch, rotation flatly is being set, above-mentioned backing roll 14 vertically is being provided with rotation.
Be positioned at 3 backing rolls 14 of above-below direction, be separately positioned on the outstanding point that is arranged on the installing component 15 on 8,9 the side of respectively standing.To set for along 3 backing rolls 14 of above-below direction setting, the outstanding distance of the side at distance station 8,9 is along with diminishing upward.
Like this, supply to the substrate W on the side at said fixing station 8 from above-mentioned loading part 2, the lower end combines with the V ditch of driven roller 13, by a lateral bolster is held on the above-mentioned backing roll 14, become the upper end than the state of lower end, carry by above-mentioned driven roller 13 to the side inclination predetermined angular at each station 8,9.
Respectively the stand outstanding distance of 8,9 side of the distance that setting is positioned at 3 backing rolls 14 of above-below direction makes the lower end be supported in substrate W on the driven roller 13 by the angle tilt ground maintenances of for example 70～85 degree.If make the angle tilt of substrate W, just can not swing to the direction opposite, and under stable status, carry with vergence direction by 70～85 degree.And, prevent that substrate W is crooked because of deadweight under the situation of level carrying.In the present embodiment, aforesaid substrate W is by the angle tilt carrying of 75 degree.
From above-mentioned loading part 2 under the situation of the Handling device 10 supplying substrate W of a side of fixed station 8, support unit 4 by making loading part 2 according to remain on fixed station 8 on the identical angle tilt in angle of inclination of substrate W, just can successfully join substrate W to a side of fixed station 8 from loading part 2.
Similarly, taking out of substrate W under the situation of unloading portion 3 from other sides of fixed station 8, if the support unit 4 that makes this unloading portion 3 is according to the angle tilt identical with substrate W, just can be successfully join substrate W to above-mentioned unloading portion 3 from other sides at said fixing station 8.
On a side at said fixing station 8, as treating apparatus, setting gradually brush cleaning part 17 respectively, as the etch processes portion 18 and the pure water cleaning part 19 of handling part, on a side and other sides of above-mentioned turning base 9, the dried portion 20 (side only is shown among the figure) as treating apparatus is being set respectively.
Above-mentioned brush cleaning part 17 no detailed diagrams, but constitute endless, brush is faced put, disposed a pair of belt that moves for no reason along the above-below direction of substrate W.Then, by carrying aforesaid substrate W between the brush face of these a pair of belts, a pair of plate face that has cleaned substrate W with regard to brush is the surface and the back side.
In the surface and the back side of substrate W after being cleaned by above-mentioned brush cleaning part 17, etch processes is carried out by above-mentioned etch processes portion 18 in the surface.As shown in Figures 2 and 3, this etch processes portion 18 has a plurality of nozzles, has first to fourth nozzle 21a～21d in the present embodiment.
Arranged spaced is on short transverse in accordance with regulations for first to fourth nozzle 21a～21d, and simultaneously, for the carrying direction of substrate W, the nozzle that is configured to be arranged in the top is in than the nozzle below being positioned on the position at carrying direction rear of the substrate W shown in Fig. 3 arrow.Like this, connect the carrying direction cant angle theta angle of the straight line L of a plurality of nozzle 21a～21d for substrate W.
Set the interval of the short transverse of first to fourth nozzle 21a～21d according to the height dimension of substrate W,, set along the configuration of the carrying direction of substrate W, the i.e. interval of adjacent nozzles in the carrying direction of substrate W according to the transporting velocity of substrate W.
For example, be under the situation of 1800mm at the height dimension of substrate W, as shown in Figure 3, with the height h of the first nozzle 21a
1Be configured on the height and position of 1800mm, with the height h of the second nozzle 21b
2Be configured on the height and position of 1350mm, with the height h of the 3rd nozzle 21c
3Be configured on the height and position of 900mm, with the height h of the 4th nozzle 21d
4Be configured on the height and position of 450mm.
As shown in Figure 2, first to fourth nozzle 21a～21d is connected with 4 take-off pipes 23 from main supply pipe 22 branches respectively.On each take-off pipe 23, flowrate control valve 24 is being set.Like this, surface that just can be from first to fourth nozzle 21a～21d towards substrate W, the flow according to setting based on flowrate control valve 24 separately sprays the etching solution as treating fluid.Have again, on above-mentioned main supply pipe 22, switching control pilot 25 is set,, supply with etching solution to each take-off pipe 23 by open this switching control pilot 25.
To set at interval along the nozzle of the carrying direction of substrate W, be ejected into the etching solution on the plate face of substrate W from each nozzle 21a～21d, not overlapping separately according to the transporting velocity of substrate W along the moving zone of the plate surface current of substrate W.
Fig. 4 is when the transporting velocity of substrate W is 2000mm/min, 4000mm/min and 6000mm/min, utilize experiment, obtain the flow through chart in zone of plate face of substrate W of the etching solution that sprays from the first to fourth nozzle 21a～21d that is configured on above-mentioned each height and position.In the figure, curve X
1～X
4The transporting velocity that is substrate W is the situation of 2000mm/min, curve Y
1～Y
4The transporting velocity that is substrate W is the situation of 4000mm/min, curve Z
1～Z
4The transporting velocity that is substrate W is the situation of 6000mm/min.
For example, from being configured in the highly etching solution of the locational first nozzle 21a injection of 1800mm, when the transporting velocity of substrate W is 2000mm/min, as curve X
1Shown in, from the etching solution that the first nozzle 21a sprays, the scope under the vertical direction about 20mm of the carrying direction skew zone of direction substrate W of flowing through.When transporting velocity is 4000mm/min, as curve Y
1Shown in, the scope under the vertical direction about 40mm of the carrying direction skew zone of direction substrate W of flowing through.When transporting velocity is 6000mm/min, as curve Z
1Shown in, the scope under the vertical direction about 60mm of the carrying direction skew zone of direction substrate W of flowing through.
Fig. 6 to Fig. 8 shows based on the experiment shown in Fig. 4, when the transporting velocity of substrate W is 2000mm/min, 4000mm/min and 6000mm/min, make from the configuration status of nonoverlapping separately above-mentioned first～the 4th nozzle 21a～21d in zone of the etching solution of the plate face of the substrate W that flows through after first～the 4th nozzle 21a～21d sprays and after each nozzle ejection along the zone of the moving etching solution of the plate surface current of substrate W.
In Fig. 5, curve A shows from first～the 4th nozzle 21a～21d and is ejected into the speed the bottom of substrate W that back on the plate face of substrate W flows to the etching solution of below, and curve B shows from each nozzle 21a～21d and is ejected into the time that etching solution on the plate face of substrate W arrives the bottom of substrate W.
From this chart as can be known, longer from the etching solution that spray the high position of substrate W than the time that the etching solution that sprays from lower position arrives the bottom, but the velocity ratio in the bottom of substrate W is fast from the etching solution that lower position sprays.
For example, the time that the etching solution that sprays from the 3rd nozzle 21c of height 900mm position arrives the bottom is 0.44sec, so from the time that highly is positioned in the calculating that etching solution that the locational first nozzle 21a of 2 times 1800mm sprays arrives the bottom be its 0.88sec of 2 times, but measured value is 0.62sec.That is, in the bottom of substrate W, because the etching solution that falls from the high position is bigger than the etching solution acceleration that falls from lower position, so obtain measurement result as shown in Figure 5.
Above-mentioned pure water cleaning part 19 utilizes pure water to clean the plate face of the substrate W after the etching in above-mentioned etching cleaning part 18.The detailed structure of pure water cleaning part 19 is not shown, but a plurality of slot-shaped nozzle that for example forms from the carrying direction inclination predetermined angular for substrate W can roughly be ejected into pure water on the whole tow sides of substrate W equably.Like this, by through above-mentioned pure water cleaning part 19, etch processes in above-mentioned etch processes portion 18 and residual etching solution is just washed off.
Above-mentioned dried portion 20 removes to adhere to and remains in the pure water on the cleaned substrate W in the above-mentioned pure water handling part 19.Dried portion 20 is by using the air knife than the pressure gas of higher cleanings such as pressure injection inert gas to constitute, spray pressure gas by tow sides, adhere to the pure water that remains on this plate face with regard to having removed cleaning treatment in above-mentioned pure water handling part 19 to the substrate W that carries.
Substrate W one carries out dried in dried portion 20, the turning base 9 that is provided with this dried portion 20 is with regard to 180 degree rotations, with the substrate W after the dried towards unloading portion 3 sides.Under this state,, give above-mentioned unloading portion 3 from Handling device 10 handing-over towards the 3 carrying substrate W of unloading portion.
According to the treating apparatus of said structure, by Handling device 10 substrate W is carried to prescribed direction, after in brush cleaning part 17, cleaning, arrive etch processes portion 18, at this, the surface of etch processes substrate W.Under the situation of etch processes substrate W, to shown in Figure 8,, disposing first to fourth nozzle 21a～21d of etch processes portion 18 according to height dimension and the transporting velocity of substrate W as Fig. 6.
That is,, setting the interval of above-mentioned first to fourth nozzle 21a～21d, making to be ejected into back on the substrate W plate face respectively from first to fourth nozzle 21a～21d to flow to each zone of etching solution of below not overlapping according to the transporting velocity of substrate W.
For example, under the situation of pressing 6000mm/sec transporting velocity carrying substrate W, as shown in Figure 8, if the zone that will flow towards the below from the etching solution that first to fourth nozzle 21a～21d sprays is made as first to fourth region R
1～R
4, then on the above-below direction total length of substrate W, these each region R
1～R
4Not overlapping with other adjacent zones.
Therefore, etching the first area R of substrate W
1After etching solution not with etching second area R
2Etching solution mix, similarly, etch processes the 3rd, the 4th region R
3, R
4After etching solution in etching solution behind other zones of not mixed etch processes.
For example, if etching first area R
1After etching solution and etching second area R
2After etching solution mix, then the reactivity of etching solution is with regard to variation.But as mentioned above, the etching solution that sprays from first to fourth nozzle 21a～21d does not mix, and separately the region R of flowing through
1～R
4
Therefore, utilize the reactive etching solution that does not have variation, the related region R of etching solution of etch processes substrate W from each nozzle 21a～21d injection
1～R
4, just can on the whole surface of substrate W, carry out this etch processes equably.
As shown in Figure 8, if according to the configuration height of first to fourth nozzle 21a～21d, the short transverse of substrate W is divided into first to fourth height section H
1～H
4, then first the height section H
1First area R is just only flowed through
1The etching solution etching, but second the height section H
2By first, second region R of being flowed through
1, R
2The etching solution etching.Similarly, the 3rd height section H
3By first to the 3rd region R of being flowed through
1～R
3The etching solution etching, the 4th the height section H
4By first to fourth region R of being flowed through
1～R
4The etching solution etching.
Illustrate by each height section H of etching solution etching with oblique line among Fig. 8
1～H
4Area.The 4th height section H
4Because by the etching solution etching of spraying from first to fourth nozzle 21a～21d, thus maximum become, if the area of this part is made as " 1 ", then only by from the etching solution of first nozzle etched first section H highly
1Area just equal 0.016.Similarly, the second height part equals 0.125, the three height part and equals 0.422.
If will flow to the 4th height section H
4The flow of etching solution be made as " 1 ", then to first to the 3rd height section H
1～H
3The flow of the etching solution that setting is sprayed from first to fourth nozzle 21a～21d makes it and the reciprocal corresponding flow of above-mentioned area ratio.
For example, according to the first height section H
4With the first height section H
1The area ratio be 1: 0.016, just set throughput ratio and be 1: 62.5 of its inverse quantity delivered from the etching solution of the first nozzle 21a.Similarly, with the first height section H
4With the second height section H
2Throughput ratio be set at 1: 8.0, with the 4th the height section H
4With the 3rd height section H
3Throughput ratio be set at 1: 2.4.
In this wise, as if the quantity delivered of setting according to the inverse of area ratio from the etching solution of each nozzle, each height part of substrate W is just roughly the same from the etch processes amount (processing area * etching liquid measure) of the time per unit that etching solution is accepted, therefore, just can be roughly the whole surface of etch processes substrate W equably.
Fig. 9 illustrates second embodiment of the present invention.This embodiment is along the short transverse of the substrate W that carries under upright state, disposing a plurality of nozzles from the top of substrate W along the below single file, for example 5 nozzles 21.Set a plurality of nozzles 21, make the spacing P of these nozzles 21
1～P
4Along with becoming big successively to the below from direction on the short transverse of substrate W.
Have again, the flowrate control valve 24 identical with first embodiment is being set having connected on each take-off pipe 23 of nozzle 21, on main supply pipe 22, switching control pilot 25 is being set.
Spray the etching solution of supplying with from nozzle 21 to the short transverse top of substrate W, bigger than the speed that falls downwards of spraying the etching solution of supplying with to the bottom.Therefore, uniformly-spaced disposed in the structure of a plurality of nozzles 21 in the short transverse along substrate W, the etch processes amount of the time per unit that the top of substrate W is accepted is just little than the bottom.
But as described above, the disposition interval that makes a plurality of nozzles 21 than lower dense, just can make the etch processes amount of the time per unit that substrate W accepts roughly the same on the top of substrate W on the short transverse total length of substrate W.Like this, just can carry out the etch processes of substrate W on the whole equably.
Figure 10 illustrates the 3rd embodiment of the present invention.This embodiment roughly equally spaced disposes a plurality of nozzles along the short transverse of the substrate W that carries under upright state, for example 4 nozzles 21.Each nozzle 21 and first embodiment similarly by take-off pipe 23, are connected with main supply pipe 22.
Pressure is set respectively on each take-off pipe 23 sets valve 31, just can utilize this pressure to set valve 31, set from the pressure of the etching solution of each nozzle 21 injection.In this embodiment, be supplied in the pressure of the etching solution in the nozzle 21 of short transverse top, set highly than the pressure in the nozzle 21 that is supplied in the below.
Like this, owing to can supply with the etching solution of Duoing, therefore, just can on the short transverse total length of substrate W, carry out roughly etching uniformly to the short transverse top of the substrate W that under upright state, carries than the bottom.
In the 3rd embodiment shown in Figure 10, also can replace pressure and set valve 31, on each take-off pipe 23, flow rate regulating valve is set.Like this, can adjust from the flow of the etching solution of each nozzle 21 injections.For example, utilize each flow rate regulating valve, with being supplied in the amount of the etching solution in the nozzle 21 of short transverse top, more than the amount of supplying with to the nozzle 21 that is positioned at the below.
Like this, because can be to the short transverse top of the substrate W that under upright state, carries, supply is than the etching solution of bottom volume, therefore, even the etching solution that supplies to substrate W top is faster than the speed that the etching solution that supplies to the bottom flows to the below, also can be roughly the total length of the short transverse of etching substrates W equably.
Figure 11 illustrates the 4th embodiment of the present invention.This embodiment and first embodiment are similar, but utilize 6 nozzle 21a～21f of first to the 6th, substrate W is sprayed supply with treating fluid.
First, second nozzle 21a, 21b are arranged on the first collector pipe 35a, and the 3rd, the 4th nozzle 21c, 21d are arranged on the second collector pipe 35b, and the 5th, the 6th nozzle 21e, 21f are arranged on the 3rd collector pipe 35c.Each collector pipe 35a～35c is the take-off pipe 23 by being provided with flowrate control valve 24 respectively, is connected with the main supply pipe 22 that is provided with switching control pilot 25.
The first collector pipe 35a is configured in epimere, and the second collector pipe 35b is configured in the stage casing, and the 3rd collector pipe 35c is configured in hypomere.Like this, the first nozzle 21a is in the extreme higher position, and second to the 6th nozzle 21b～21f reduces level configurations successively.In addition, first to the 6th nozzle 21a～21f and first embodiment similarly, the nozzle that is configured to be positioned at the short transverse top is in than the nozzle below being positioned on the position at carrying direction rear of substrate W.
In this wise, by on first to the 3rd collector pipe 35a～35c, respectively being provided with 2 nozzles, if it is identical to be arranged on the bore of 2 nozzles on each collector pipe 35a～35c, just can be by identical flow inject process liquid.Wanting to change under the situation of the flow of the treating fluid that is arranged on 2 nozzle ejection on the collector pipe, can change the bore of 2 nozzles.Can utilize the flowrate control valve 24 that is arranged on each take-off pipe 23, adjust the flow that supplies to 3 treating fluids among collector pipe 35a～35c.
Thereby, in such structure, also can be with the amount of the treating fluid that sprays from 6 nozzle 21a～21f, it is bigger than the amount of the nozzle below being positioned to set the nozzle that is positioned at the short transverse top for.
Figure 12 and Figure 13 illustrate the 5th embodiment of the present invention.In the respective embodiments described above, as nozzle, the injection section of having enumerated flat type and tapered etc. treating fluid is circular nozzle, but in the present embodiment, uses the nozzle of the slot type that linearity sprays.
In the 5th embodiment, on the short transverse of substrate W, arranged spaced first to the 5th nozzle 121a～121e of slot type in accordance with regulations, and makes the nozzle be positioned at the short transverse top be in than the nozzle below being positioned on the position at carrying direction rear of substrate W.Each nozzle 121a～121e is disposing the injection direction for the treatment of fluid towards the vertical direction below.
By using the nozzle 121a～121e of slot type, can be evenly and promptly to whole the inject process liquid of substrate W, therefore, just can utilize the processing for the treatment of fluid on the whole equably at the plate face.
In addition, because the nozzle of slot type is not the atomized spray treating fluid, so rare heavy fog.Therefore, handle under the situation of spraying pure water in the back at soup, the heavy fog that can prevent pure water is attached on the part of also not spraying pure water of substrate W and the reaction of the soup situation different with other parts.Its result, treatment substrate W is all equably just can to utilize soup.
In the present embodiment, the treating fluid of supplying with to each nozzle 121a～121e is identical with first embodiment, on main supply pipe 22, switching control pilot 25 is set, from these 5 take-off pipes 23 of main supply pipe 22 branches, by flowrate control valve 24, be connected each take-off pipe 23 respectively with each nozzle 121a～121e.Thereby, can control quantity delivered by adjusting the aperture of each flowrate control valve 24 to the treating fluid of each nozzle 121a～121e.
Figure 14 illustrates the 6th embodiment of the present invention.The identical point of this embodiment and the 5th embodiment is to use 5 nozzle 121a～121e of slot type, but each nozzle of plate face almost parallel ground configuration of the substrate W that carries for angle tilt slit face in accordance with regulations.That is, be, disposing the injection direction for the treatment of fluid towards direction for the plate face quadrature of substrate W with the difference of the 5th embodiment.
Have again, in the 6th embodiment, first to the 6th nozzle 121a～121e and above-mentioned the 5th embodiment similarly, the nozzle that is configured to be positioned at the short transverse top is in than the nozzle below being positioned on the position at carrying direction rear of substrate W.
In such structure, with the 5th embodiment similarly, can be evenly and promptly go up inject process liquid to whole of substrate W, so can utilize the processing for the treatment of fluid on the whole equably at the plate face.
Figure 15 and Figure 16 are the 7th embodiments of the present invention.The 7th embodiment is the variation of the 6th embodiment shown in Figure 14.That is, on nozzle, use 5 nozzle 121a～121e of slot type.Each nozzle 121a～121e is on the short transverse of substrate W, and the arranged spaced nozzle that becomes to be positioned at the short transverse top is in than the nozzle below being positioned on the position at carrying direction rear of substrate W in accordance with regulations.
Each nozzle 121a～121e is disposing injection direction towards the top shown in arrow among Fig. 5, make to draw para-curve P from the treating fluid of eject slot.In addition, as shown in figure 16, each nozzle 121a～121e is configured to touch from the part of the summit T of the para-curve P of the treating fluid of eject slot the plate face of substrate W.
In this wise, if the plate face of substrate W is disposed each nozzle 121a～121e, treating fluid just contacts with the plate face of substrate W under flow velocity approaches 0 state slowly, at this plate face upper reaches downwards.Therefore, prevent that treating fluid from recoiling on the plate face of substrate W.
For example, utilized in the pure water rinsing that is used as treating fluid under the situation of the substrate that soup etc. handled as treating fluid, if pure water recoils after touching the plate face of substrate W powerfully, sometimes the pure water that comprises soup is just attached on the part in the residence of a high official of the not rinsing of substrate W, the reaction of this part was different with other parts after soup was diluted, and the treatment state of substrate W is just inhomogeneous.
But, become parabolic shape by spraying rinsing liquid from each nozzle 121a～121e, the part of this parabolical summit T is contacted, just recoil hardly on the plate face of substrate W of rinsing liquid with the plate face of substrate W.Therefore, therefore the situation of reacting on the part after handling attached to the rinsing of substrate W with regard to the rinsing liquid that do not comprise soup, can prevent to take place in the treatment state of substrate W when rinsing from handling uneven.
Having, in the 7th embodiment, as treating fluid, be not limited to rinsing liquid, also can be soup.Under the situation of having used soup, identical with the situation of having used rinsing liquid, because not recoil and on attached to other parts, on the plate face of substrate W of soup so can prevent to utilize the uneven situation of processing of the substrate W of soup.
In addition, as nozzle, being not limited to slot type, also can be the nozzle of flat type and other types such as tapered.
The present invention is not limited to the respective embodiments described above, can do various distortion in the scope that does not break away from purport.For example, the treating fluid as supplying in handling part on the substrate is not limited to etching solution, can be other soups, for example developer solution, stripper, aquae hydrogenii dioxidi, ammoniacal liquor of treatment substrate etc.In addition, the present invention also goes in the pure water cleaning part, in this case, by supplying with pure water from nozzle, just can carry out the rinsing of substrate equably and handle on whole.
Claims (9)
1. the treating apparatus of a substrate utilizes the treating fluid treatment substrate, it is characterized in that having:
Handling device is carried aforesaid substrate to prescribed direction under upright state; And
Handling part is to the substrate inject process liquid that utilizes this Handling device to carry under upright state;
Above-mentioned handling part has a plurality of nozzles to the plate face inject process liquid of aforesaid substrate, these a plurality of nozzles in accordance with regulations arranged spaced on the short transverse of aforesaid substrate, and the nozzle that is positioned at the short transverse top is in the rear of the carrying direction of aforesaid substrate than the nozzle that is positioned at the below.
2. the treating apparatus of substrate as claimed in claim 1 is characterized in that, is spaced apart setting in the carrying direction adjacent nozzles of aforesaid substrate, makes after the nozzle ejection separately not overlapping along the zone of the moving treating fluid of the plate surface current of substrate.
3. the treating apparatus of substrate as claimed in claim 1 is characterized in that, is positioned at the nozzle of short transverse top, sets greatly than the emitted dose of the treating fluid of the nozzle that is positioned at the below.
4. the treating apparatus of substrate as claimed in claim 1, it is characterized in that, said nozzle be configured in injection direction obliquely the side so that injected treating fluid draw on the position of the plate face that the parabolical apex portion of para-curve and treating fluid touches substrate.
5. the treating apparatus of a substrate utilizes the treating fluid treatment substrate, it is characterized in that having:
Handling device is carried aforesaid substrate to prescribed direction under upright state; And
A plurality of nozzles are to the plate face inject process liquid of the substrate that utilizes this Handling device to carry under upright state;
Above-mentioned a plurality of nozzle arrangement are become, and along the short transverse of aforesaid substrate, and spacing is along with become big downwards successively from the short transverse top.
6. the treating apparatus of a substrate utilizes the treating fluid treatment substrate, it is characterized in that having:
Handling device is carried aforesaid substrate to prescribed direction under upright state; And
A plurality of nozzles are to the plate face inject process liquid of the substrate that utilizes this Handling device to carry under upright state;
Above-mentioned a plurality of nozzle arrangement are become,, and be supplied in the pressure of the treating fluid in the nozzle of short transverse top, set highly than the pressure of the treating fluid in the nozzle that is supplied in the below along the short transverse of aforesaid substrate arranged spaced in accordance with regulations.
7. the treating apparatus of a substrate utilizes the treating fluid treatment substrate, it is characterized in that having:
Handling device is carried aforesaid substrate to prescribed direction under upright state; And
A plurality of nozzles are to the plate face inject process liquid of the substrate that utilizes this Handling device to carry under upright state;
Above-mentioned a plurality of nozzle arrangement are become,, and be supplied in the flow of the treating fluid in the nozzle of short transverse top, get greatly than the flow set of the treating fluid in the nozzle that is supplied in the below along the short transverse of aforesaid substrate arranged spaced in accordance with regulations.
8. the disposal route of a substrate disposes a plurality of nozzles along the short transverse of substrate, comes treatment substrate from these nozzle ejection treating fluids, it is characterized in that having following operation:
The carrying operation is carried aforesaid substrate to prescribed direction under upright state; And
Jeting process, the substrate inject process liquid of under upright state, carrying from a plurality of nozzles, and make after each nozzle ejection the zone of the treating fluid separately under the plate surface current of substrate not overlapping.
9. the disposal route of a substrate disposes a plurality of nozzles along the short transverse of substrate, comes treatment substrate from these nozzle ejection treating fluids, it is characterized in that having following operation:
The carrying operation is carried aforesaid substrate to prescribed direction under upright state; And
Jeting process, the substrate inject process liquid of under upright state, carrying from above-mentioned a plurality of nozzles, and make treating fluid in the nozzle on the short transverse top that is supplied in aforesaid substrate, bigger than the pressure and at least one side in the flow of the treating fluid in the nozzle that is supplied in the bottom.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003199087 | 2003-07-18 | ||
| JP199087/2003 | 2003-07-18 | ||
| JP2004191134A JP4421956B2 (en) | 2003-07-18 | 2004-06-29 | Substrate processing apparatus and processing method |
| JP191134/2004 | 2004-06-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1576961A CN1576961A (en) | 2005-02-09 |
| CN100419501C true CN100419501C (en) | 2008-09-17 |
Family
ID=34379735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100640625A Expired - Fee Related CN100419501C (en) | 2003-07-18 | 2004-07-16 | Apparatus and method for processing substrate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4421956B2 (en) |
| KR (1) | KR101055247B1 (en) |
| CN (1) | CN100419501C (en) |
| TW (1) | TWI347629B (en) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4627681B2 (en) * | 2005-04-20 | 2011-02-09 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and processing method |
| TWI319213B (en) * | 2005-11-28 | 2010-01-01 | Hitachi High Tech Corp | A substrate processing device, a substrate processing method and a production method for a substrate |
| JP4557872B2 (en) * | 2005-11-28 | 2010-10-06 | 株式会社日立ハイテクノロジーズ | Substrate processing apparatus, substrate processing method, and substrate manufacturing method |
| JP4685618B2 (en) * | 2005-12-13 | 2011-05-18 | 芝浦メカトロニクス株式会社 | Substrate processing equipment |
| KR100835745B1 (en) * | 2006-12-29 | 2008-06-09 | 최찬규 | Method for slimming glass |
| JP2008277556A (en) * | 2007-04-27 | 2008-11-13 | Shibaura Mechatronics Corp | Processing apparatus for substrate |
| JP4575932B2 (en) * | 2007-05-29 | 2010-11-04 | 化研テック株式会社 | Pallet cleaning device and pallet cleaning method |
| KR100865475B1 (en) * | 2007-08-30 | 2008-10-27 | 세메스 주식회사 | Nozzle assembly, apparatus for supplying a processing liquid having the same and method of supplying a processing liquid using the same |
| JP5362623B2 (en) * | 2010-03-03 | 2013-12-11 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
| DE102010013909A1 (en) * | 2010-04-01 | 2011-10-06 | Lp Vermarktungs Gmbh & Co. Kg | Apparatus and method for spraying a surface of a substrate |
| CN102094199A (en) * | 2010-11-23 | 2011-06-15 | 黄佳佳 | Etching equipment of electronic soft label |
| US8458842B2 (en) * | 2011-05-10 | 2013-06-11 | Nanya Technology Corp. | Post-CMP wafer cleaning apparatus |
| KR101342616B1 (en) * | 2013-04-26 | 2013-12-20 | 창성 주식회사 | Vertical substrate detachment system |
| KR102223764B1 (en) * | 2013-12-27 | 2021-03-05 | 세메스 주식회사 | Apparatus and Method for treating substrate |
| CN105158829B (en) * | 2015-07-30 | 2019-06-04 | 京东方科技集团股份有限公司 | Substrate, colored filter mould group, the method and display device for forming substrate mould group |
| JP6667241B2 (en) * | 2015-09-28 | 2020-03-18 | 株式会社Ｓｃｒｅｅｎホールディングス | Processing liquid supply device, substrate processing system and processing liquid supply method |
| CN106992136B (en) * | 2017-04-20 | 2020-04-07 | 武汉华星光电技术有限公司 | Wet etching equipment and wet etching method |
| KR102433317B1 (en) * | 2017-10-11 | 2022-08-17 | 삼성디스플레이 주식회사 | Apparatus for wet etchng |
| CN111006262A (en) * | 2019-12-31 | 2020-04-14 | 美埃（中国）环境净化有限公司 | Washing type oil fume removal purification device and washing control method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001343632A (en) * | 2000-06-02 | 2001-12-14 | Sharp Corp | Method for manufacturing liquid crystal display device |
| JP2002350054A (en) * | 2001-05-30 | 2002-12-04 | Tokyo Electron Ltd | Base plate processing apparatus and base plate processing method |
| CN1398425A (en) * | 2000-12-11 | 2003-02-19 | 住友精密工业株式会社 | Transfer type substrate treating device |
| CN1398424A (en) * | 2000-12-12 | 2003-02-19 | 住友精密工业株式会社 | Oscillating shower transfer type substrate treatment device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10118583A (en) | 1996-10-24 | 1998-05-12 | Nippon Electric Glass Co Ltd | Cleaning device for planar matter |
| JP3550277B2 (en) * | 1997-07-24 | 2004-08-04 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
| KR100343044B1 (en) * | 1997-08-28 | 2002-10-25 | 다이닛뽕스크린 세이조오 가부시키가이샤 | Substrate Processing Equipment and Processing Method |
| JP3556110B2 (en) * | 1998-12-22 | 2004-08-18 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
-
2004
- 2004-06-29 JP JP2004191134A patent/JP4421956B2/en not_active Expired - Fee Related
- 2004-07-14 TW TW093120984A patent/TWI347629B/en not_active IP Right Cessation
- 2004-07-16 KR KR1020040055566A patent/KR101055247B1/en active IP Right Grant
- 2004-07-16 CN CNB2004100640625A patent/CN100419501C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001343632A (en) * | 2000-06-02 | 2001-12-14 | Sharp Corp | Method for manufacturing liquid crystal display device |
| CN1398425A (en) * | 2000-12-11 | 2003-02-19 | 住友精密工业株式会社 | Transfer type substrate treating device |
| CN1398424A (en) * | 2000-12-12 | 2003-02-19 | 住友精密工业株式会社 | Oscillating shower transfer type substrate treatment device |
| JP2002350054A (en) * | 2001-05-30 | 2002-12-04 | Tokyo Electron Ltd | Base plate processing apparatus and base plate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101055247B1 (en) | 2011-08-08 |
| JP4421956B2 (en) | 2010-02-24 |
| TWI347629B (en) | 2011-08-21 |
| TW200507038A (en) | 2005-02-16 |
| KR20050009695A (en) | 2005-01-25 |
| CN1576961A (en) | 2005-02-09 |
| JP2005052825A (en) | 2005-03-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100419501C (en) | Apparatus and method for processing substrate | |
| CN102194657B (en) | Device for cleaning and treating substrate | |
| EP0820351B1 (en) | Fluid delivery apparatus and method | |
| JP2002172369A (en) | Multi-functional cleaning module for plate display production apparatus and cleaning apparatus using the module | |
| CN101814424B (en) | Substrate disposing device and method thereof | |
| KR101069600B1 (en) | Inline type substrate coater apparatus and method thereof | |
| CN100377297C (en) | Substrate processor | |
| KR101218449B1 (en) | Substrate processing apparatus | |
| KR101703212B1 (en) | Washing apparatus for cleaning system of float glass | |
| CN100358115C (en) | Oscillating shower transfer type substrate treatment device | |
| CN1330432C (en) | Chemical applying method and its applying device | |
| KR100764683B1 (en) | Substrate processing apparatus | |
| JP2000254605A (en) | Cleaning device for flexible substrate | |
| KR101150022B1 (en) | Apparatus for etching | |
| JPH09276773A (en) | Substrate treating device | |
| KR20140134378A (en) | Apparatus for jetting fluid and apparatus for cleaning a substrate having the same | |
| KR101904027B1 (en) | Apparatus for processing a substrate | |
| KR101650439B1 (en) | Washing apparatus for cleaning system of float glass | |
| KR101308136B1 (en) | Apparatus for treating substrate | |
| KR101965297B1 (en) | The nozzle and Apparatus for treating substrate with the nozzle | |
| TWI603421B (en) | Wet chemistry process apparatus | |
| JPH07204547A (en) | Liquid treating device for thin plate member | |
| KR102351696B1 (en) | Substrate cleaning apparatus | |
| KR102056857B1 (en) | shuttle and Apparatus for treating substrate with the shuttle | |
| KR20080062350A (en) | Apparatus for cleaning substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080917 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |