CN100416824C - 低电压nmos基静电放电箝位电路 - Google Patents

低电压nmos基静电放电箝位电路 Download PDF

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Publication number
CN100416824C
CN100416824C CNB2004800038357A CN200480003835A CN100416824C CN 100416824 C CN100416824 C CN 100416824C CN B2004800038357 A CNB2004800038357 A CN B2004800038357A CN 200480003835 A CN200480003835 A CN 200480003835A CN 100416824 C CN100416824 C CN 100416824C
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China
Prior art keywords
transistor
resistance
type trap
doped region
coupled
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Expired - Lifetime
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CNB2004800038357A
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English (en)
Chinese (zh)
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CN1748309A (zh
Inventor
迈克尔·贝尔德
理查德·T·艾达
詹姆斯·D·怀特菲尔德
许洪忠
索潘·乔施
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN1748309A publication Critical patent/CN1748309A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/813—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements specially adapted to provide an electrical current path other than the field-effect induced current path
    • H10D89/815—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements specially adapted to provide an electrical current path other than the field-effect induced current path involving a parasitic bipolar transistor triggered by the local electrical biasing of the layer acting as base region of said parasitic bipolar transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
CNB2004800038357A 2003-02-10 2004-02-04 低电压nmos基静电放电箝位电路 Expired - Lifetime CN100416824C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/361,469 US6844597B2 (en) 2003-02-10 2003-02-10 Low voltage NMOS-based electrostatic discharge clamp
US10/361,469 2003-02-10

Publications (2)

Publication Number Publication Date
CN1748309A CN1748309A (zh) 2006-03-15
CN100416824C true CN100416824C (zh) 2008-09-03

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Family Applications (1)

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CNB2004800038357A Expired - Lifetime CN100416824C (zh) 2003-02-10 2004-02-04 低电压nmos基静电放电箝位电路

Country Status (7)

Country Link
US (2) US6844597B2 (enExample)
EP (1) EP1595277A2 (enExample)
JP (1) JP4402109B2 (enExample)
KR (1) KR101006827B1 (enExample)
CN (1) CN100416824C (enExample)
TW (1) TWI322501B (enExample)
WO (1) WO2004073023A2 (enExample)

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JP2005311134A (ja) * 2004-04-22 2005-11-04 Nec Electronics Corp 静電気放電保護素子
KR20060010979A (ko) * 2004-07-29 2006-02-03 현대자동차주식회사 차량의 원격 감시 및 제어장치와 그것의 제어방법
US7122867B2 (en) * 2004-11-19 2006-10-17 United Microelectronics Corp. Triple well structure and method for manufacturing the same
DE102005000801A1 (de) * 2005-01-05 2006-07-13 Infineon Technologies Ag Vorrichtung, Anordnung und System zum ESD-Schutz
US7508038B1 (en) 2005-04-29 2009-03-24 Zilog, Inc. ESD protection transistor
US7394133B1 (en) * 2005-08-31 2008-07-01 National Semiconductor Corporation Dual direction ESD clamp based on snapback NMOS cell with embedded SCR
US7268613B2 (en) * 2005-10-31 2007-09-11 International Business Machines Corporation Transistor switch with integral body connection to prevent latchup
JP2008218564A (ja) * 2007-03-01 2008-09-18 Matsushita Electric Ind Co Ltd 半導体装置
WO2008132561A1 (en) * 2007-04-27 2008-11-06 Freescale Semiconductor, Inc. Integrated circuit, electronic device and esd protection therefor
CN101373770B (zh) * 2007-08-20 2011-10-05 天津南大强芯半导体芯片设计有限公司 一种芯片衬底电位隔离电路及其应用和应用方法
US8279566B2 (en) * 2008-04-30 2012-10-02 Freescale Semiconductor, Inc. Multi-voltage electrostatic discharge protection
US20100067155A1 (en) * 2008-09-15 2010-03-18 Altera Corporation Method and apparatus for enhancing the triggering of an electrostatic discharge protection device
US8194370B2 (en) * 2008-11-25 2012-06-05 Nuvoton Technology Corporation Electrostatic discharge protection circuit and device
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
DE102011109596B4 (de) 2011-08-05 2018-05-09 Austriamicrosystems Ag Schaltungsanordnung zum Schutz gegen elektrostatische Entladungen
CN102646601B (zh) * 2012-04-19 2016-09-28 北京燕东微电子有限公司 一种半导体结构及其制造方法
US9257463B2 (en) * 2012-05-31 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned implantation process for forming junction isolation regions
CN103280458B (zh) * 2013-05-17 2015-07-29 电子科技大学 一种集成电路芯片esd防护用mos器件
CN103887194A (zh) * 2013-05-23 2014-06-25 上海华力微电子有限公司 并行测试器件
KR101847227B1 (ko) 2013-05-31 2018-04-10 매그나칩 반도체 유한회사 Esd 트랜지스터
KR101975608B1 (ko) 2013-06-12 2019-05-08 매그나칩 반도체 유한회사 고전압용 esd 트랜지스터 및 그 정전기 보호 회로
KR102098663B1 (ko) 2013-10-11 2020-04-08 삼성전자주식회사 정전기 방전 보호 소자
JP6349217B2 (ja) * 2014-09-29 2018-06-27 日立オートモティブシステムズ株式会社 電子制御装置
CN104392995B (zh) * 2014-10-30 2017-09-22 京东方科技集团股份有限公司 一种晶体管、驱动电路及其驱动方法、显示装置
US9997510B2 (en) * 2015-09-09 2018-06-12 Vanguard International Semiconductor Corporation Semiconductor device layout structure
US10680435B2 (en) * 2016-04-26 2020-06-09 Intersil Americas LLC Enhanced electrostatic discharge (ESD) clamp
US20200066709A1 (en) * 2018-08-21 2020-02-27 Mediatek Inc. Semiconductor device having noise isolation between power regulator circuit and electrostatic discharge clamp circuit
US10896953B2 (en) * 2019-04-12 2021-01-19 Globalfoundries Inc. Diode structures
JP7455016B2 (ja) * 2020-07-15 2024-03-25 ルネサスエレクトロニクス株式会社 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1162842A (zh) * 1997-04-14 1997-10-22 世界先进积体电路股份有限公司 半导体装置的静电保护电路及其结构
US5686751A (en) * 1996-06-28 1997-11-11 Winbond Electronics Corp. Electrostatic discharge protection circuit triggered by capacitive-coupling
US6291862B1 (en) * 1998-01-07 2001-09-18 Micron Technology, Inc. Supply voltage reduction circuit for integrated circuit
US6329691B1 (en) * 1999-12-13 2001-12-11 Tower Semiconductor Ltd. Device for protection of sensitive gate dielectrics of advanced non-volatile memory devices from damage due to plasma charging

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0723429B1 (en) * 1992-09-30 2002-04-10 FEINGOLD, Vladimir Intraocular lens insertion system
US5563525A (en) * 1995-02-13 1996-10-08 Taiwan Semiconductor Manufacturing Company Ltd ESD protection device with FET circuit
US6329692B1 (en) * 1998-11-30 2001-12-11 Motorola Inc. Circuit and method for reducing parasitic bipolar effects during eletrostatic discharges

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5686751A (en) * 1996-06-28 1997-11-11 Winbond Electronics Corp. Electrostatic discharge protection circuit triggered by capacitive-coupling
CN1162842A (zh) * 1997-04-14 1997-10-22 世界先进积体电路股份有限公司 半导体装置的静电保护电路及其结构
US6291862B1 (en) * 1998-01-07 2001-09-18 Micron Technology, Inc. Supply voltage reduction circuit for integrated circuit
US6329691B1 (en) * 1999-12-13 2001-12-11 Tower Semiconductor Ltd. Device for protection of sensitive gate dielectrics of advanced non-volatile memory devices from damage due to plasma charging

Also Published As

Publication number Publication date
TWI322501B (en) 2010-03-21
US6844597B2 (en) 2005-01-18
JP2006517350A (ja) 2006-07-20
EP1595277A2 (en) 2005-11-16
US20050093073A1 (en) 2005-05-05
US7288820B2 (en) 2007-10-30
JP4402109B2 (ja) 2010-01-20
WO2004073023A3 (en) 2004-12-23
CN1748309A (zh) 2006-03-15
KR20050107753A (ko) 2005-11-15
KR101006827B1 (ko) 2011-01-12
WO2004073023A2 (en) 2004-08-26
US20040155300A1 (en) 2004-08-12
TW200417022A (en) 2004-09-01

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Address after: Texas in the United States

Patentee after: NXP USA, Inc.

Address before: Texas in the United States

Patentee before: FREESCALE SEMICONDUCTOR, Inc.

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Granted publication date: 20080903

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