CN100413040C - 多晶硅薄膜晶体管的形成方法 - Google Patents

多晶硅薄膜晶体管的形成方法 Download PDF

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CN100413040C
CN100413040C CNB2005100672531A CN200510067253A CN100413040C CN 100413040 C CN100413040 C CN 100413040C CN B2005100672531 A CNB2005100672531 A CN B2005100672531A CN 200510067253 A CN200510067253 A CN 200510067253A CN 100413040 C CN100413040 C CN 100413040C
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孙暻锡
柳明官
朴宰徹
金亿洙
李俊昊
权世烈
任章淳
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Hydis Technologies Co Ltd
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Abstract

一种多晶硅薄膜晶体管的形成方法，其包括如下步骤：在玻璃基板上顺序形成缓冲膜和非晶硅膜；利用由晶粒碰撞产生突出部生成的结晶化方法使所述非晶硅膜结晶化，形成具有多个突出部的多晶硅膜；在有源图案上构图所述多晶硅膜，该有源图案仅具有两个突出部，所述突出部隔着栅电极形成区域离开配置；在所述构图的多晶硅膜上涂敷阻挡膜，不完全覆盖突出部；对所述基板结果物离子注入掺杂剂，在含有突出部的栅电极形成区域两侧的多晶硅膜部分分别形成源极和漏极；除去所述阻挡膜；在所述基板结果物上形成栅极绝缘膜；在所述源极及漏极之间的栅极绝缘膜部分上形成栅极。

Description

多晶硅薄膜晶体管的形成方法
技术领域
本发明涉及薄膜晶体管液晶显示装置的制造方法，特别涉及利用连续侧面结晶化(Sequential Lateral Solidification)方法的多晶硅薄膜晶体管的形成方法。
背景技术
对液晶显示装置或有机发光显示装置等来说作为开关元件使用的薄膜晶体管(Thin Film Transistor：下面称为TFT)是对所述平板显示装置的性能最重要的构成要素。在此，判断所述TFT性能的基准即迁移率(mobility)或泄漏电流等受电荷载体移动经路即有源层(活性層)具有怎样状态(state)或结构，即有源层材料即硅薄膜具有怎样状态或结构的影响很大。
现在常用的液晶显示装置中，TFT的有源层大部分是非晶硅(amorphoussilicon：下面称为a-Si)。但是，由于使用a-Si作为有源层的a-Si TFT的迁移率在0.5cm2/Vs左右，非常低，所以制造要装入液晶显示装置内的全部开关元件受到限制。这意味着，必须使液晶显示装置的周边电路用驱动元件以非常快的速度动作，但由于a-Si TFT不能满足周边电路用的驱动元件所要求的动作速度，在上述a-Si TFT中实质上难于实现周边电路用的驱动元件。
另一方面，由于使用多晶硅(polycrystalline silicon：以下称为poly-Si)作为有源层的poly-Si TFT的迁移率为数十至数百cm2/Vs，迁移率高，故可对应周边电路用驱动元件产生高的驱动速度。因此，若在玻璃基板上形成poly-Si膜，则不仅象素开关元件，周边电路用等的驱动部件也可实现。另外，周边电路的形成所需要的单独的模制工序，而且在形成图像的同时一并形成至周边电路的驱动部件，所以可期待周边电路用驱动部件费用的减少。
并且，由于所述poly-Si TFT具有高的迁移率故比a-Si TFT小，而且，由于可通过集成工序同时形成周边电路的驱动元件及象素区域的开关元件，故线宽微细化变得更容易，对得到TFT-LCD中难以实现的高分辨率是非常有利的。
另外，由于所述poly-Si TFT具有高的电流特性，故作为下一代平板显示装置的有机发光显示装置的驱动元件是合适的，因此，最近正在活跃地开发在玻璃基板上形成poly-Si膜制造TFT的poly-Si TFT的研究。
在此，在玻璃基板上形成poly-Si膜的方法例如a-Si膜蒸镀后进行热处理使a-Si膜结晶化的方法。但是，在采用该方法时，600℃以上的高温会使玻璃基板产生变形，因此，导致可靠性及成品率降低。
因此，作为可不给玻璃基板热造成损伤而使a-Si膜结晶化的方法提案有受激准分子激光器退火(Excimer Laser Annealing)的方法，还有连续侧面结晶化(Sequential Lateral Solidification：下面称为SLS)的方法。
所述SLS方法作为利用脉冲激光器(pulse laser)和具有选择性提供透过部的缝隙图案(slit pattem)的掩膜使a-Si膜在poly-Si膜中结晶化的方法，根据掩膜的形态和进行方法而结晶化形态大有不同。
详细地说，所述SLS方法中，使激光束通过由形成缝隙图案的透过部和其以外的非透过部构成的掩膜的所述透过部，在a-Si膜部分溶融后，随着经过的时间，溶融的a-Si在poly-Si膜侧面生长，该过程一边移动基板一边反复进行，这样a-Si膜整体在poly-Si膜中结晶化。这种SLS方法不仅不会给玻璃基板带来热损伤，还可仅选择a-Si膜进行结晶化，在a-Si膜的结晶化中适用非常有利。
但是，根据所述的SLS方法，在晶粒生长时，从激光扫描区域的左侧部开始生长的晶粒和从右侧开始生长的晶粒在激光扫描区域的中央碰撞，一边突出部(protrusion)，结晶生长一边停止，但所述突出部由于是方向(orientation)互不相同的两个晶粒碰撞生成而成故存在很多缺陷。由此，在通过利用所述SLS方法的a-Si膜结晶化形成poly-Si TFT时，若TFT的沟道区域含有突出部，则TFT驱动时电子和空穴的迁移率急剧降低，另外，在位于漏区域时，结果导致高的泄漏电流产生。这样，即使采用具有相同沟道长度和宽度的晶体管，根据是否含有突出部，TFT的特性变化也是显著的，结果，成为在整个基板上TFT特性不均匀的原因。
发明内容
因此，本发明为解决现有的问题点而开发的，其目的在于，提供一种在整个基板上具有均匀特性的poly-Si TFT的形成方法，利用SLS方法结晶生长，同时防止TFT驱动时导致电子及空穴的迁移率降低。
为实现所述这样的目的，本发明提供一种poly-Si TFT的形成方法，其包括如下步骤：在玻璃基板上顺序形成缓冲膜和a-Si膜；利用由晶粒碰撞而形成突出部的结晶化方法使所述a-Si膜结晶化，形成具有多个突出部的poly-Si膜；将所述poly-Si膜构图为有源图案(active pattern)，该有源图案仅具有两个突出部，所述突出部隔着栅电极形成区域离开配置；在所述构图的poly-Si膜上涂敷阻挡膜(バリア膜)，不完全覆盖突出部；对所述基板结果物离子注入掺杂剂，在栅电极形成区域两侧的形成的多晶硅膜的突出部的部分分别形成源极和漏极；除去所述阻挡膜；在所述基板结果物上形成栅极绝缘膜；在所述源极及漏极之间的栅极绝缘膜部分上形成栅极。
在此，所述poly-Si膜通过SLS方法进行。
所述阻挡膜涂敷成有机绝缘膜、有机树脂(resin)或光致抗蚀剂中任意一种。另外，所述阻挡膜以旋涂方式涂敷，此时，旋涂时通过调节旋转速度来调节突出部的露出高度及露出区域的范围。另外，所述阻挡膜以
Figure C20051006725300051
Figure C20051006725300052
的厚度涂敷。
所述掺杂离子注入中，调节加速电压，使其随距突出部变远，离子注入的掺杂剂的量逐渐变少。
本发明在利用SLS方法形成poly-Si TFT中，由于在TFT的沟道区域不含有突出部，所以可防止所述poly-Si TFT的特性降低。另外，本发明中，由于同时形成随着从突出部至沟道区域移动掺杂剂的浓度逐渐减小的LDD，故可抑制电场的急剧增加，不但可进一步提高TFT的特性，而且可以使其稳定。另外，由于基板整体的全部的TFT上不含有突出部，故可提高基板TFT特性的均一度。
由此，本发明可提高使用poly-Si TFT的液晶显示装置的品质。
附图说明
图1是说明本发明的多晶硅薄膜晶体管的形成方法的各工序剖面图；
图2和图1相同，是说明本发明的多晶硅薄膜晶体管的形成方法的各工序剖面图；
图3和图1相同，是说明本发明的多晶硅薄膜晶体管的形成方法的各工序剖面图。
符号说明
10    玻璃基板
11    缓冲膜
12    多晶硅膜
13    突出部
14    阻挡膜
15    掺杂剂
16    源极
17    漏极
18    栅极绝缘膜
19    栅极
20    多晶硅薄膜晶体管
具体实施方式
下面参照附图详细说明本发明的实施例。
首先说明本发明的技术原理。本发明中，利用SLS方法使a-Si膜在poly-Si中结晶化后，选择地向所述poly-Si膜的结晶化时生成的突出部进行高浓度的离子注入，将所述突出部制造成源极/漏极，使电子及空穴的移动通路即面板区域不包含所述突出部。
这样，TFT沟道区域不包含突出部，而仅以纯粹的poly-Si形成，但驱动TFT时不会导致电子及空穴的迁移率降低，因此，本发明可提供具有优良的特性的poly-Si TFT。
具体地说，图1～图3是用于说明本发明的poly-Si TFT的形成方法的工序剖面图，下面进行说明。
参照图1，在透明性绝缘基板例如玻璃基板10上形成缓冲膜11。所述缓冲膜11是为了在进行后续的结晶化工序时或进行高温热处理时防止从玻璃基板10向TFT内部流入杂质而形成的，其由SiOx及SiOxNy或SiNx等含有硅的氧化膜或氮化膜、或者含有Al、Cu、Ag、Ti及W这样的金属的金属氮化膜及金属氧化膜等形成。
其次，在所述缓冲膜11上形成a-Si膜后，使所述a-Si膜结晶化，形成poly-Si膜12。在此，所述a-Si膜的结晶化最好通过如下的SLS方法方法进行，即，使构图后的激光束通过掩膜，仅扫描a-Si膜的一部分，然后顺次移动基板。此时，根据SLS方法的结晶生长原理在结晶化的poly-Si膜12上存在多个突出部13。
其次，将poly-Si膜12构图成有源图案的形态。此时，所述poly-Si膜12的构图为如下形态，有源图案仅包括两个突出部13，所述突出部隔着栅极形成区域离开配置。
参照图2，在具有突出部的poly-Si膜12上以旋涂方式涂敷后述离子注入工序时的阻挡膜14。此时，所述阻挡膜14以不完全覆盖突出部的厚度例如
Figure C20051006725300071
的厚度涂敷，进行该旋涂时通过调节旋转速度调节突出部的露出高度及露出区域的范围。作为所述旋涂所涂敷的材料，只要是在离子注入时可实现停止层(stopper)的作用的材料即可，例如使用有机绝缘膜、有机树脂或光致抗蚀剂等。
其次，对基板结果物离子注入掺杂剂15，由此，在包括所述突出部的栅极形成区域两侧的poly-Si膜部分分别形成源极16和漏极17。此时，所述掺杂剂15的离子注入，通过加速电压的调节，使突出部周边区域的离子注入量的分布最好是，距突出部越远离子注入的掺杂剂的量越少。
这是由于，距突出部越远，poly-Si膜的厚度越薄，之后变为一定，所以相对地阻挡膜的厚度越接近突出部越薄，另外，离子注入时的掺杂剂形成高斯分布，因此，在调节所述离子注入时的加速电压时，在接近突出部的区域注入大量的掺杂剂，与突出部越远，其量越少，从而可抑制漏极区域的电场上升。即，LDD(Lightly Doped Drain)的形成可同时进行。
另一方面，如前所述，在离子注入掺杂剂15时，与以没有栅极绝缘膜的状态进行离子注入相关地从栅极绝缘膜流入poly-Si膜12的氧气及杂质的浓度减少。
参照图3，在除去阻挡膜后，利用公知的方法进行活性化工序。然后，在基板结果物的前面上蒸镀栅极绝缘膜18，然后，在所述栅极绝缘膜18上蒸镀栅极用金属膜，之后，对其构图，在源极16和漏极17之间的栅极绝缘膜部分形成栅极19，其结果形成共面(coplanar)结构的poly-Si TFT20。
在此，由于本发明的poly-Si TFT20是突出部配置于栅极19两侧的结构，即沟道区域不B包含突出部的结构，故在将其驱动时，不会导致电子及空穴的迁移率降低。这样，本发明可通过SLS方法实现poly-Si TFT，同时，改善其特征。
之后未图示，顺序进行保护膜形成工序、通孔(via hole)形成工序及象素电极形成工序等众所周知的一连串后续工序，制造具有poly-Si TFT的液晶显示装置的阵列基板。
另一方面，以上本发明对利用SLS方法使poly-Si膜结晶化的情况进行了说明，但在所述SLS方法之外的其它结晶化方法中，也可以适用于晶粒子的碰撞产生突出部的生成的方法。
以上通过实施例详细地说明了本发明，但本发明不限于实施例，本发明在所属的技术领域的具有通常的知识的技术人员可以在不脱离本发明的思想和精神的情况下对本发明进行修改或变更。

Claims (7)

1. 一种多晶硅薄膜晶体管的形成方法，其特征在于，包括如下步骤：
在玻璃基板上顺序形成缓冲膜和非晶硅膜；
利用由晶粒碰撞而形成突出部的结晶化方法使所述非晶硅膜结晶化，形成具有多个突出部的多晶硅膜；
将所述多晶硅膜构图为有源图案，该有源图案仅具有两个突出部，所述突出部隔着栅电极形成区域离开配置；
在所述构图的多晶硅膜上涂敷阻挡膜，不完全覆盖突出部；
对包括所述两个突出部和阻挡膜的整个表面离子注入掺杂剂，在栅电极形成区域两侧的形成的多晶硅膜的突出部的部分分别形成源极和漏极；
除去所述阻挡膜；
在包括所述源极、漏极和暴露的多晶硅膜的整个表面上形成栅极绝缘膜；
在所述源极及漏极之间的栅极绝缘膜部分上形成栅极。
2. 如权利要求1所述的多晶硅薄膜晶体管的形成方法，其特征在于，形成所述多晶硅膜的步骤利用连续侧面结晶化方法进行。
3. 如权利要求1所述的多晶硅薄膜晶体管的形成方法，其特征在于，所述阻挡膜由从有机绝缘膜、有机树脂及光致抗蚀剂构成的组中选择的任意一个涂敷而成。
4. 如权利要求1所述的多晶硅薄膜晶体管的形成方法，其特征在于，所述阻挡膜以旋涂方式涂敷。
5. 如权利要求4所述的多晶硅薄膜晶体管的形成方法，其特征在于，所述阻挡膜通过旋涂时调节旋转速度调节突出部的露出高度及露出区域的范围。
6. 如权利要求1所述的多晶硅薄膜晶体管的形成方法，其特征在于，所述阻挡膜以10～
Figure C2005100672530002C1
的厚度涂敷。
7. 如权利要求1所述的多晶硅薄膜晶体管的形成方法，其特征在于，所述掺杂离子注入中，调节加速电压，距突出部越远离子注入的掺杂剂的量越少。
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