CN100407363C - 在综合处理系统中用于等离子搀杂和离子注入的方法和装置 - Google Patents

在综合处理系统中用于等离子搀杂和离子注入的方法和装置 Download PDF

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Publication number
CN100407363C
CN100407363C CN028233220A CN02823322A CN100407363C CN 100407363 C CN100407363 C CN 100407363C CN 028233220 A CN028233220 A CN 028233220A CN 02823322 A CN02823322 A CN 02823322A CN 100407363 C CN100407363 C CN 100407363C
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China
Prior art keywords
plasma
chamber
mixes
wafer
platen
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Expired - Fee Related
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CN028233220A
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Chinese (zh)
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CN1592944A (zh
Inventor
史蒂文·R·沃尔特
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN028233220A 2001-10-26 2002-10-17 在综合处理系统中用于等离子搀杂和离子注入的方法和装置 Expired - Fee Related CN100407363C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/007,530 US6716727B2 (en) 2001-10-26 2001-10-26 Methods and apparatus for plasma doping and ion implantation in an integrated processing system
US10/007,530 2001-10-26

Publications (2)

Publication Number Publication Date
CN1592944A CN1592944A (zh) 2005-03-09
CN100407363C true CN100407363C (zh) 2008-07-30

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CN028233220A Expired - Fee Related CN100407363C (zh) 2001-10-26 2002-10-17 在综合处理系统中用于等离子搀杂和离子注入的方法和装置

Country Status (10)

Country Link
US (1) US6716727B2 (es)
EP (1) EP1438734B1 (es)
JP (1) JP4587364B2 (es)
KR (1) KR100876049B1 (es)
CN (1) CN100407363C (es)
AT (1) ATE445226T1 (es)
DE (1) DE60233956D1 (es)
ES (1) ES2333782T3 (es)
TW (1) TW582061B (es)
WO (1) WO2003038879A2 (es)

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KR100475122B1 (ko) * 2002-12-20 2005-03-10 삼성전자주식회사 실리콘 접촉저항을 개선할 수 있는 반도체 소자 형성방법
US7126808B2 (en) * 2003-04-01 2006-10-24 Varian Semiconductor Equipment Associates, Inc. Wafer platen equipped with electrostatic clamp, wafer backside gas cooling, and high voltage operation capability for plasma doping
US7748344B2 (en) * 2003-11-06 2010-07-06 Axcelis Technologies, Inc. Segmented resonant antenna for radio frequency inductively coupled plasmas
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US7741621B2 (en) * 2004-07-14 2010-06-22 City University Of Hong Kong Apparatus and method for focused electric field enhanced plasma-based ion implantation
US20060205192A1 (en) * 2005-03-09 2006-09-14 Varian Semiconductor Equipment Associates, Inc. Shallow-junction fabrication in semiconductor devices via plasma implantation and deposition
US20060236931A1 (en) * 2005-04-25 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Tilted Plasma Doping
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US20070170867A1 (en) * 2006-01-24 2007-07-26 Varian Semiconductor Equipment Associates, Inc. Plasma Immersion Ion Source With Low Effective Antenna Voltage
KR101346081B1 (ko) * 2006-06-20 2013-12-31 참엔지니어링(주) 플라스마 에칭 챔버
US20080121821A1 (en) * 2006-11-27 2008-05-29 Varian Semiconductor Equipment Associates Inc. Techniques for low-temperature ion implantation
US20080132046A1 (en) * 2006-12-04 2008-06-05 Varian Semiconductor Equipment Associates, Inc. Plasma Doping With Electronically Controllable Implant Angle
US20080169183A1 (en) * 2007-01-16 2008-07-17 Varian Semiconductor Equipment Associates, Inc. Plasma Source with Liner for Reducing Metal Contamination
US7820533B2 (en) * 2007-02-16 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Multi-step plasma doping with improved dose control
KR100855002B1 (ko) * 2007-05-23 2008-08-28 삼성전자주식회사 플라즈마 이온 주입시스템
US8071964B2 (en) * 2008-05-01 2011-12-06 Axcelis Technologies, Inc. System and method of performing uniform dose implantation under adverse conditions
US20100155600A1 (en) * 2008-12-23 2010-06-24 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for plasma dose measurement
US20120060353A1 (en) * 2010-09-14 2012-03-15 Varian Semiconductor Equipment Associates, Inc. Mechanism and method for ensuring alignment of a workpiece to a mask
US8361856B2 (en) 2010-11-01 2013-01-29 Micron Technology, Inc. Memory cells, arrays of memory cells, and methods of forming memory cells
US8329567B2 (en) 2010-11-03 2012-12-11 Micron Technology, Inc. Methods of forming doped regions in semiconductor substrates
US8450175B2 (en) 2011-02-22 2013-05-28 Micron Technology, Inc. Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith
US8569831B2 (en) 2011-05-27 2013-10-29 Micron Technology, Inc. Integrated circuit arrays and semiconductor constructions
US20120315734A1 (en) * 2011-06-09 2012-12-13 Chan-Lon Yang Method for fabricating semiconductor device
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CN103137413B (zh) * 2011-11-30 2016-06-01 中国科学院微电子研究所 离子注入机控制系统
US9036391B2 (en) 2012-03-06 2015-05-19 Micron Technology, Inc. Arrays of vertically-oriented transistors, memory arrays including vertically-oriented transistors, and memory cells
US9006060B2 (en) 2012-08-21 2015-04-14 Micron Technology, Inc. N-type field effect transistors, arrays comprising N-type vertically-oriented transistors, methods of forming an N-type field effect transistor, and methods of forming an array comprising vertically-oriented N-type transistors
US9129896B2 (en) 2012-08-21 2015-09-08 Micron Technology, Inc. Arrays comprising vertically-oriented transistors, integrated circuitry comprising a conductive line buried in silicon-comprising semiconductor material, methods of forming a plurality of conductive lines buried in silicon-comprising semiconductor material, and methods of forming an array comprising vertically-oriented transistors
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JP6143440B2 (ja) * 2012-11-22 2017-06-07 住重試験検査株式会社 半導体装置の製造方法及び基板処理システム
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US9190248B2 (en) 2013-09-07 2015-11-17 Varian Semiconductor Equipment Associates, Inc. Dynamic electrode plasma system
US9287085B2 (en) * 2014-05-12 2016-03-15 Varian Semiconductor Equipment Associates, Inc. Processing apparatus and method of treating a substrate
US9899193B1 (en) * 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
US11069511B2 (en) 2018-06-22 2021-07-20 Varian Semiconductor Equipment Associates, Inc. System and methods using an inline surface engineering source
US10699871B2 (en) 2018-11-09 2020-06-30 Applied Materials, Inc. System and method for spatially resolved optical metrology of an ion beam
US11728187B2 (en) * 2018-12-21 2023-08-15 Axcelis Technologies, Inc. Method for decreasing cool down time with heated system for semiconductor manufacturing equipment
TWI838493B (zh) * 2019-03-25 2024-04-11 日商亞多納富有限公司 氣體分析裝置
US20200411342A1 (en) * 2019-06-27 2020-12-31 Applied Materials, Inc. Beamline architecture with integrated plasma processing
US20240249908A1 (en) * 2023-01-25 2024-07-25 Applied Materials, Inc. Dose Cup Assembly for an Ion Implanter
US20240274404A1 (en) * 2023-02-09 2024-08-15 Applied Materials, Inc. System and Method for Reducing Particle Formation in a Process Chamber of an Ion Implanter

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US5558718A (en) * 1994-04-08 1996-09-24 The Regents, University Of California Pulsed source ion implantation apparatus and method
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US6153524A (en) * 1997-07-29 2000-11-28 Silicon Genesis Corporation Cluster tool method using plasma immersion ion implantation

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US5558718A (en) * 1994-04-08 1996-09-24 The Regents, University Of California Pulsed source ion implantation apparatus and method
US6153524A (en) * 1997-07-29 2000-11-28 Silicon Genesis Corporation Cluster tool method using plasma immersion ion implantation
CN1233668A (zh) * 1998-03-11 1999-11-03 易通公司 用发射光谱法对等离子体成分的监控

Also Published As

Publication number Publication date
JP4587364B2 (ja) 2010-11-24
WO2003038879A2 (en) 2003-05-08
ES2333782T3 (es) 2010-03-01
ATE445226T1 (de) 2009-10-15
JP2005508088A (ja) 2005-03-24
US6716727B2 (en) 2004-04-06
US20030082891A1 (en) 2003-05-01
CN1592944A (zh) 2005-03-09
KR20040054745A (ko) 2004-06-25
DE60233956D1 (de) 2009-11-19
WO2003038879A3 (en) 2003-12-11
EP1438734B1 (en) 2009-10-07
TW582061B (en) 2004-04-01
KR100876049B1 (ko) 2008-12-26
EP1438734A2 (en) 2004-07-21

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