CN100401481C - 等离子体处理方法和等离子体装置 - Google Patents

等离子体处理方法和等离子体装置 Download PDF

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Publication number
CN100401481C
CN100401481C CNB200510000398XA CN200510000398A CN100401481C CN 100401481 C CN100401481 C CN 100401481C CN B200510000398X A CNB200510000398X A CN B200510000398XA CN 200510000398 A CN200510000398 A CN 200510000398A CN 100401481 C CN100401481 C CN 100401481C
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CN
China
Prior art keywords
model
processing
plasma
measurement data
plasma processing
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Expired - Fee Related
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CNB200510000398XA
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English (en)
Chinese (zh)
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CN1641841A (zh
Inventor
友安昌幸
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN1641841A publication Critical patent/CN1641841A/zh
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Publication of CN100401481C publication Critical patent/CN100401481C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/32—Operator till task planning
    • G05B2219/32201—Build statistical model of past normal proces, compare with actual process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/45—Nc applications
    • G05B2219/45031—Manufacturing semiconductor wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CNB200510000398XA 2004-01-08 2005-01-10 等离子体处理方法和等离子体装置 Expired - Fee Related CN100401481C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004002883A JP4448335B2 (ja) 2004-01-08 2004-01-08 プラズマ処理方法及びプラズマ処理装置
JP20042883 2004-01-08

Publications (2)

Publication Number Publication Date
CN1641841A CN1641841A (zh) 2005-07-20
CN100401481C true CN100401481C (zh) 2008-07-09

Family

ID=34737130

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB200510000398XA Expired - Fee Related CN100401481C (zh) 2004-01-08 2005-01-10 等离子体处理方法和等离子体装置

Country Status (5)

Country Link
US (1) US7289866B2 (https=)
JP (1) JP4448335B2 (https=)
KR (1) KR100612736B1 (https=)
CN (1) CN100401481C (https=)
TW (1) TW200527256A (https=)

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US7596421B2 (en) * 2005-06-21 2009-09-29 Kabushik Kaisha Toshiba Process control system, process control method, and method of manufacturing electronic apparatus
US7833381B2 (en) * 2005-08-18 2010-11-16 David Johnson Optical emission interferometry for PECVD using a gas injection hole
JP4874678B2 (ja) 2006-03-07 2012-02-15 株式会社東芝 半導体製造装置の制御方法、および半導体製造装置の制御システム
JP4640828B2 (ja) * 2006-03-17 2011-03-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5107597B2 (ja) * 2006-03-29 2012-12-26 東京エレクトロン株式会社 プラズマ処理装置
US8070972B2 (en) * 2006-03-30 2011-12-06 Tokyo Electron Limited Etching method and etching apparatus
JP4914119B2 (ja) * 2006-05-31 2012-04-11 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
US7286948B1 (en) * 2006-06-16 2007-10-23 Applied Materials, Inc. Method for determining plasma characteristics
US7676790B1 (en) 2006-08-04 2010-03-09 Lam Research Corporation Plasma processing system component analysis software and methods and systems for creating the same
JP5105399B2 (ja) * 2006-08-08 2012-12-26 東京エレクトロン株式会社 データ収集方法，基板処理装置，基板処理システム
US7937178B2 (en) * 2006-08-28 2011-05-03 Tokyo Electron Limited Charging method for semiconductor device manufacturing apparatus, storage medium storing program for implementing the charging method, and semiconductor device manufacturing apparatus implementing the charging method
JP5312765B2 (ja) * 2007-01-26 2013-10-09 株式会社日立国際電気 基板処理方法及び半導体製造装置
US8158017B2 (en) * 2008-05-12 2012-04-17 Lam Research Corporation Detection of arcing events in wafer plasma processing through monitoring of trace gas concentrations
JP5102706B2 (ja) * 2008-06-23 2012-12-19 東京エレクトロン株式会社 バッフル板及び基板処理装置
JP2013511814A (ja) * 2009-11-19 2013-04-04 ラム リサーチ コーポレーション プラズマ処理システムを制御するための方法および装置
JP5397215B2 (ja) * 2009-12-25 2014-01-22 ソニー株式会社 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム
US20110297088A1 (en) * 2010-06-04 2011-12-08 Texas Instruments Incorporated Thin edge carrier ring
JP6033453B2 (ja) 2012-10-17 2016-11-30 東京エレクトロン株式会社 多変量解析を用いたプラズマエンドポイント検出
JP6312405B2 (ja) * 2013-11-05 2018-04-18 東京エレクトロン株式会社 プラズマ処理装置
JPWO2015125193A1 (ja) * 2014-02-21 2017-03-30 キヤノンアネルバ株式会社 処理装置
JP6388491B2 (ja) * 2014-05-02 2018-09-12 三菱重工業株式会社 計測装置を備えたプラズマ発生装置及びプラズマ推進器
JP6310866B2 (ja) * 2015-01-30 2018-04-11 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法並びに解析方法
US10269545B2 (en) * 2016-08-03 2019-04-23 Lam Research Corporation Methods for monitoring plasma processing systems for advanced process and tool control
JP6875224B2 (ja) * 2017-08-08 2021-05-19 株式会社日立ハイテク プラズマ処理装置及び半導体装置製造システム
JP6676020B2 (ja) * 2017-09-20 2020-04-08 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理装置状態予測方法
JP6914211B2 (ja) 2018-01-30 2021-08-04 株式会社日立ハイテク プラズマ処理装置及び状態予測装置
JP6990634B2 (ja) * 2018-08-21 2022-02-03 株式会社日立ハイテク 状態予測装置及び半導体製造装置
JP7154119B2 (ja) * 2018-12-06 2022-10-17 東京エレクトロン株式会社 制御方法及びプラズマ処理装置
CN111326387B (zh) * 2018-12-17 2023-04-21 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
JP7270489B2 (ja) * 2019-07-10 2023-05-10 東京エレクトロン株式会社 性能算出方法および処理装置
JP2021038452A (ja) * 2019-09-05 2021-03-11 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
JP7289992B1 (ja) 2021-07-13 2023-06-12 株式会社日立ハイテク 診断装置及び診断方法並びにプラズマ処理装置及び半導体装置製造システム
US12476094B2 (en) 2021-09-27 2025-11-18 Applied Materials, Inc. Model-based characterization of plasmas in semiconductor processing systems
JP7564334B2 (ja) 2022-03-24 2024-10-08 株式会社日立ハイテク 装置診断システム、装置診断装置、半導体装置製造システムおよび装置診断方法
CN120731498A (zh) * 2023-03-01 2025-09-30 东京毅力科创株式会社 基板处理系统以及基板处理方法
JP2024137176A (ja) * 2023-03-24 2024-10-07 株式会社Ｓｃｒｅｅｎホールディングス 分析装置、分析方法および分析プログラム
JP7667486B1 (ja) * 2023-12-13 2025-04-23 ダイキン工業株式会社 探索装置、プラズマ処理装置、および探索方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125660A (ja) * 1996-08-29 1998-05-15 Fujitsu Ltd プラズマ処理装置、プロセスモニタ方法及び半導体装置の製造方法
US6503364B1 (en) * 1999-09-03 2003-01-07 Hitachi, Ltd. Plasma processing apparatus

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US181299A (en) * 1876-08-22 Improvement in pumps
US6197116B1 (en) * 1996-08-29 2001-03-06 Fujitsu Limited Plasma processing system
KR100560886B1 (ko) * 1997-09-17 2006-03-13 동경 엘렉트론 주식회사 가스 플라즈마 프로세스를 감시 및 제어하기 위한 시스템및 방법
US6151532A (en) * 1998-03-03 2000-11-21 Lam Research Corporation Method and apparatus for predicting plasma-process surface profiles
JP4776783B2 (ja) * 1999-05-07 2011-09-21 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US6725121B1 (en) * 2001-05-24 2004-04-20 Advanced Micro Devices, Inc. Method and apparatus for using a dynamic control model to compensate for a process interrupt
JP3639268B2 (ja) * 2002-06-14 2005-04-20 株式会社日立製作所 エッチング処理方法
JP4317701B2 (ja) * 2003-03-12 2009-08-19 東京エレクトロン株式会社 処理結果の予測方法及び予測装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125660A (ja) * 1996-08-29 1998-05-15 Fujitsu Ltd プラズマ処理装置、プロセスモニタ方法及び半導体装置の製造方法
US6503364B1 (en) * 1999-09-03 2003-01-07 Hitachi, Ltd. Plasma processing apparatus

Also Published As

Publication number Publication date
TWI356322B (https=) 2012-01-11
TW200527256A (en) 2005-08-16
JP4448335B2 (ja) 2010-04-07
JP2005197503A (ja) 2005-07-21
US20050154482A1 (en) 2005-07-14
KR100612736B1 (ko) 2006-08-21
CN1641841A (zh) 2005-07-20
US7289866B2 (en) 2007-10-30
KR20050073414A (ko) 2005-07-13

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SE01 Entry into force of request for substantive examination
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Granted publication date: 20080709

Termination date: 20210110