CN100397734C - 激光器组件 - Google Patents

激光器组件 Download PDF

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Publication number
CN100397734C
CN100397734C CNB038104059A CN03810405A CN100397734C CN 100397734 C CN100397734 C CN 100397734C CN B038104059 A CNB038104059 A CN B038104059A CN 03810405 A CN03810405 A CN 03810405A CN 100397734 C CN100397734 C CN 100397734C
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CN
China
Prior art keywords
layer
laser assembly
semiconductor laser
laser
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB038104059A
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English (en)
Chinese (zh)
Other versions
CN1653659A (zh
Inventor
早水尚树
大木泰
青柳秀雄
小矶武
山形友二
室清文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of CN1653659A publication Critical patent/CN1653659A/zh
Application granted granted Critical
Publication of CN100397734C publication Critical patent/CN100397734C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/146—External cavity lasers using a fiber as external cavity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092—Multi-wavelength lasing
    • H01S5/1096—Multi-wavelength lasing in a single cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
CNB038104059A 2002-05-08 2003-05-08 激光器组件 Expired - Lifetime CN100397734C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP133219/2002 2002-05-08
JP2002133219A JP2003332680A (ja) 2002-05-08 2002-05-08 レーザモジュール

Publications (2)

Publication Number Publication Date
CN1653659A CN1653659A (zh) 2005-08-10
CN100397734C true CN100397734C (zh) 2008-06-25

Family

ID=29561163

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038104059A Expired - Lifetime CN100397734C (zh) 2002-05-08 2003-05-08 激光器组件

Country Status (5)

Country Link
EP (1) EP1503467B1 (de)
JP (1) JP2003332680A (de)
CN (1) CN100397734C (de)
DE (1) DE60328278D1 (de)
WO (1) WO2003100930A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2077606A4 (de) * 2006-10-20 2012-06-20 Ntt Electronics Corp Halbleiterlaseranordnung und verfahren zu ihrer ansteuerung
JP2013229638A (ja) * 2013-08-12 2013-11-07 Toshiba Corp 半導体発光素子および発光装置
CN105429004A (zh) * 2015-12-30 2016-03-23 中国科学院半导体研究所 多有源区外延结构、采用其的半导体激光器及其制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5438583A (en) * 1992-12-15 1995-08-01 Sony Corporation Semiconductor laser with optimum resonator
JPH10200195A (ja) * 1997-01-13 1998-07-31 Sony Corp 半導体レーザ
JP2000223780A (ja) * 1999-02-01 2000-08-11 Sharp Corp 半導体レーザ素子
EP1076388A1 (de) * 1999-02-26 2001-02-14 The Furukawa Electric Co., Ltd. Lichtemittierendes halbleiterbauelement
JP2001068789A (ja) * 1999-08-26 2001-03-16 Fuji Photo Film Co Ltd 半導体レーザ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6205161B1 (en) * 1996-03-01 2001-03-20 Agfa-Gevaert Aktiengesellschaft Method and device for operating a laser diode
JP4329978B2 (ja) * 2001-02-06 2009-09-09 古河電気工業株式会社 半導体レーザモジュールと、光帰還機能を有する半導体レーザ素子
DE60222450T2 (de) * 2001-09-28 2008-06-12 The Furukawa Electric Co., Ltd. Halbleiterlaserelement und lasermodul mit diesem element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5438583A (en) * 1992-12-15 1995-08-01 Sony Corporation Semiconductor laser with optimum resonator
JPH10200195A (ja) * 1997-01-13 1998-07-31 Sony Corp 半導体レーザ
JP2000223780A (ja) * 1999-02-01 2000-08-11 Sharp Corp 半導体レーザ素子
EP1076388A1 (de) * 1999-02-26 2001-02-14 The Furukawa Electric Co., Ltd. Lichtemittierendes halbleiterbauelement
JP2001068789A (ja) * 1999-08-26 2001-03-16 Fuji Photo Film Co Ltd 半導体レーザ

Also Published As

Publication number Publication date
EP1503467A1 (de) 2005-02-02
CN1653659A (zh) 2005-08-10
EP1503467B1 (de) 2009-07-08
JP2003332680A (ja) 2003-11-21
DE60328278D1 (de) 2009-08-20
WO2003100930A1 (fr) 2003-12-04
EP1503467A4 (de) 2005-12-07

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: THE FURUKAWA ELECTRIC CO., LTD.

Free format text: FORMER OWNER: THE FURUKAWA ELECTRIC CO., LTD.; APPLICANT

Effective date: 20070803

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20070803

Address after: Tokyo, Japan

Applicant after: FURUKAWA ELECTRIC Co.,Ltd.

Address before: Tokyo, Japan

Applicant before: FURUKAWA ELECTRIC Co.,Ltd.

Co-applicant before: MITSUI CHEMICALS, Inc.

C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20080625