CN100365734C - 包括多个设置在存储阵列中的存储单元磁阻随机存储器排列 - Google Patents

包括多个设置在存储阵列中的存储单元磁阻随机存储器排列 Download PDF

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Publication number
CN100365734C
CN100365734C CNB028041763A CN02804176A CN100365734C CN 100365734 C CN100365734 C CN 100365734C CN B028041763 A CNB028041763 A CN B028041763A CN 02804176 A CN02804176 A CN 02804176A CN 100365734 C CN100365734 C CN 100365734C
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CN
China
Prior art keywords
mram
memory
selection
layer sequence
mtj layer
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Expired - Fee Related
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CNB028041763A
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English (en)
Chinese (zh)
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CN1489767A (zh
Inventor
M·弗雷塔格
T·罗赫
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Infineon Technologies AG
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Infineon Technologies AG
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Publication of CN1489767A publication Critical patent/CN1489767A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
CNB028041763A 2001-01-25 2002-01-23 包括多个设置在存储阵列中的存储单元磁阻随机存储器排列 Expired - Fee Related CN100365734C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10103313.3 2001-01-25
DE10103313A DE10103313A1 (de) 2001-01-25 2001-01-25 MRAM-Anordnung

Publications (2)

Publication Number Publication Date
CN1489767A CN1489767A (zh) 2004-04-14
CN100365734C true CN100365734C (zh) 2008-01-30

Family

ID=7671712

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028041763A Expired - Fee Related CN100365734C (zh) 2001-01-25 2002-01-23 包括多个设置在存储阵列中的存储单元磁阻随机存储器排列

Country Status (7)

Country Link
US (1) US6791871B2 (enExample)
EP (1) EP1354321B1 (enExample)
JP (1) JP2004517504A (enExample)
KR (1) KR20030072605A (enExample)
CN (1) CN100365734C (enExample)
DE (2) DE10103313A1 (enExample)
WO (1) WO2002059898A2 (enExample)

Cited By (1)

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US20220329244A1 (en) * 2017-09-12 2022-10-13 iCometrue Company Ltd. Logic drive with brain-like elasticity and integrality based on standard commodity fpga ic chips using non-volatile memory cells

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US6490194B2 (en) * 2001-01-24 2002-12-03 Infineon Technologies Ag Serial MRAM device
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6911682B2 (en) 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6924538B2 (en) 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US7566478B2 (en) 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
DE10149737A1 (de) * 2001-10-09 2003-04-24 Infineon Technologies Ag Halbleiterspeicher mit sich kreuzenden Wort- und Bitleitungen, an denen magnetoresistive Speicherzellen angeordnet sind
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7176505B2 (en) 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US7335395B2 (en) 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
KR20030089078A (ko) * 2002-05-16 2003-11-21 주식회사 하이닉스반도체 자기터널접합소자를 갖는 자기메모리셀
US6791867B2 (en) * 2002-11-18 2004-09-14 Hewlett-Packard Development Company, L.P. Selection of memory cells in data storage devices
US7560136B2 (en) 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
JP4415745B2 (ja) * 2004-04-22 2010-02-17 ソニー株式会社 固体メモリ装置
DE102004026003B3 (de) * 2004-05-27 2006-01-19 Infineon Technologies Ag Resistive Speicherzellen-Anordnung
DE602005005676T2 (de) * 2005-09-26 2009-04-23 Qimonda Ag Mikroelektronische Vorrichtung mit Speicherelementen und Verfahren zu ihrer Herstellung
US7423281B2 (en) * 2005-09-26 2008-09-09 Infineon Technologies Ag Microelectronic device with a plurality of storage elements in serial connection and method of producing the same
US7362644B2 (en) * 2005-12-20 2008-04-22 Magic Technologies, Inc. Configurable MRAM and method of configuration
JP2008159612A (ja) 2006-12-20 2008-07-10 Toshiba Corp 半導体記憶装置
US8211557B2 (en) 2007-01-31 2012-07-03 Carnegie Mellon University Binary anisotropy media
JP2008251059A (ja) * 2007-03-29 2008-10-16 Toshiba Corp 不揮発性半導体記憶装置およびそのデータ消去方法
US7826258B2 (en) * 2008-03-24 2010-11-02 Carnegie Mellon University Crossbar diode-switched magnetoresistive random access memory system
JP2012234884A (ja) * 2011-04-28 2012-11-29 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
JP2013026337A (ja) 2011-07-19 2013-02-04 Renesas Electronics Corp 半導体装置及び磁気ランダムアクセスメモリ
US8995180B2 (en) * 2012-11-29 2015-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetoresistive random access memory (MRAM) differential bit cell and method of use
US9653137B2 (en) * 2015-04-10 2017-05-16 Globalfoundries Singapore Pte. Ltd. STT-MRAM bitcell for embedded flash applications
US9647037B2 (en) 2015-08-25 2017-05-09 Qualcomm Incorporated Resistive random access memory device with resistance-based storage element and method of fabricating same
EP4207200A4 (en) * 2020-08-31 2023-12-13 Huawei Technologies Co., Ltd. MEMORY

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5894447A (en) * 1996-09-26 1999-04-13 Kabushiki Kaisha Toshiba Semiconductor memory device including a particular memory cell block structure

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US5734605A (en) * 1996-09-10 1998-03-31 Motorola, Inc. Multi-layer magnetic tunneling junction memory cells
US5940319A (en) * 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
JP2000132961A (ja) * 1998-10-23 2000-05-12 Canon Inc 磁気薄膜メモリ、磁気薄膜メモリの読出し方法、及び磁気薄膜メモリの書込み方法
US6153443A (en) * 1998-12-21 2000-11-28 Motorola, Inc. Method of fabricating a magnetic random access memory
US6165803A (en) * 1999-05-17 2000-12-26 Motorola, Inc. Magnetic random access memory and fabricating method thereof
US6272041B1 (en) * 2000-08-28 2001-08-07 Motorola, Inc. MTJ MRAM parallel-parallel architecture
US6331943B1 (en) * 2000-08-28 2001-12-18 Motorola, Inc. MTJ MRAM series-parallel architecture
US6490194B2 (en) * 2001-01-24 2002-12-03 Infineon Technologies Ag Serial MRAM device
US6512690B1 (en) * 2001-08-15 2003-01-28 Read-Rite Corporation High sensitivity common source amplifier MRAM cell, memory array and read/write scheme

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5894447A (en) * 1996-09-26 1999-04-13 Kabushiki Kaisha Toshiba Semiconductor memory device including a particular memory cell block structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220329244A1 (en) * 2017-09-12 2022-10-13 iCometrue Company Ltd. Logic drive with brain-like elasticity and integrality based on standard commodity fpga ic chips using non-volatile memory cells
US12176902B2 (en) * 2017-09-12 2024-12-24 iCometrue Company Ltd. Logic drive with brain-like elasticity and integrality based on standard commodity FPGA IC chips using non-volatile memory cells

Also Published As

Publication number Publication date
DE10103313A1 (de) 2002-08-22
JP2004517504A (ja) 2004-06-10
EP1354321B1 (de) 2007-05-09
EP1354321A2 (de) 2003-10-22
DE50210116D1 (de) 2007-06-21
US20040017706A1 (en) 2004-01-29
WO2002059898A3 (de) 2002-09-26
CN1489767A (zh) 2004-04-14
WO2002059898A2 (de) 2002-08-01
KR20030072605A (ko) 2003-09-15
US6791871B2 (en) 2004-09-14

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Granted publication date: 20080130

Termination date: 20100223