CN100339989C - 二极管 - Google Patents
二极管 Download PDFInfo
- Publication number
- CN100339989C CN100339989C CNB2004100833399A CN200410083339A CN100339989C CN 100339989 C CN100339989 C CN 100339989C CN B2004100833399 A CNB2004100833399 A CN B2004100833399A CN 200410083339 A CN200410083339 A CN 200410083339A CN 100339989 C CN100339989 C CN 100339989C
- Authority
- CN
- China
- Prior art keywords
- diffusion
- diode
- diffusion zone
- zone
- diffusion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims abstract description 109
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 238000000926 separation method Methods 0.000 claims 1
- DCRGHMJXEBSRQG-UHFFFAOYSA-N 1-[1-(cyclooctylmethyl)-5-(hydroxymethyl)-3,6-dihydro-2H-pyridin-4-yl]-3-ethyl-2-benzimidazolone Chemical compound O=C1N(CC)C2=CC=CC=C2N1C(CC1)=C(CO)CN1CC1CCCCCCC1 DCRGHMJXEBSRQG-UHFFFAOYSA-N 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003340849A JP2005109163A (ja) | 2003-09-30 | 2003-09-30 | 半導体素子 |
JP340849/2003 | 2003-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1604318A CN1604318A (zh) | 2005-04-06 |
CN100339989C true CN100339989C (zh) | 2007-09-26 |
Family
ID=34373424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100833399A Expired - Fee Related CN100339989C (zh) | 2003-09-30 | 2004-09-30 | 二极管 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7402867B2 (zh) |
JP (1) | JP2005109163A (zh) |
CN (1) | CN100339989C (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100861294B1 (ko) * | 2006-02-24 | 2008-10-01 | 주식회사 하이닉스반도체 | 반도체 회로용 정전기 보호소자 |
JP2008091687A (ja) * | 2006-10-03 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置 |
JP5131814B2 (ja) * | 2007-02-27 | 2013-01-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5371274B2 (ja) * | 2008-03-27 | 2013-12-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
EP2501743B1 (en) * | 2009-11-20 | 2016-03-16 | E. I. du Pont de Nemours and Company | Wire wrap compositions and methods relating thereto |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1231066A (zh) * | 1996-07-26 | 1999-10-06 | 艾利森电话股份有限公司 | 具有线性电流电压特性的半导体元件 |
CN1279822A (zh) * | 1998-07-23 | 2001-01-10 | 三菱电机株式会社 | 半导体装置及其制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1587540A (en) * | 1977-12-20 | 1981-04-08 | Philips Electronic Associated | Gate turn-off diodes and arrangements including such diodes |
US4690714A (en) * | 1979-01-29 | 1987-09-01 | Li Chou H | Method of making active solid state devices |
JPS61263262A (ja) * | 1985-05-17 | 1986-11-21 | Nec Corp | 半導体集積回路装置 |
JP2579989B2 (ja) | 1988-02-23 | 1997-02-12 | 富士通株式会社 | 静電破壊保護装置 |
JPH0770740B2 (ja) * | 1991-04-18 | 1995-07-31 | 工業技術院長 | サージ防護デバイス |
JP3161508B2 (ja) * | 1996-07-25 | 2001-04-25 | 日本電気株式会社 | 半導体装置 |
DE19750992A1 (de) * | 1997-11-18 | 1999-06-02 | Bosch Gmbh Robert | Halbleiterbauelement |
JP3499140B2 (ja) * | 1998-09-18 | 2004-02-23 | 株式会社東芝 | 半導体装置 |
-
2003
- 2003-09-30 JP JP2003340849A patent/JP2005109163A/ja active Pending
-
2004
- 2004-09-30 CN CNB2004100833399A patent/CN100339989C/zh not_active Expired - Fee Related
- 2004-09-30 US US10/952,752 patent/US7402867B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1231066A (zh) * | 1996-07-26 | 1999-10-06 | 艾利森电话股份有限公司 | 具有线性电流电压特性的半导体元件 |
CN1279822A (zh) * | 1998-07-23 | 2001-01-10 | 三菱电机株式会社 | 半导体装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1604318A (zh) | 2005-04-06 |
US7402867B2 (en) | 2008-07-22 |
JP2005109163A (ja) | 2005-04-21 |
US20050067657A1 (en) | 2005-03-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: ACER COMPUTER (CHINA) CO., LTD. Free format text: FORMER OWNER: BEIDA FANGZHENG SCIENCE + TECHNOLOGY COMPUTER SYSTEM CO., LTD., SHANGHAI Effective date: 20101029 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100871 8/F, FANGZHENG BUILDING, ZHONGGUANCUN, NO.298, CHENGFU ROAD, HAIDIANDISTRICT, BEIJING TO: 200001 3/F, NO.168, XIZANG MIDDLE ROAD, HUANGPU DISTRICT, SHANGHAI |
|
TR01 | Transfer of patent right |
Effective date of registration: 20101103 Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070926 Termination date: 20140930 |
|
EXPY | Termination of patent right or utility model |