CN100339944C - 非晶质硅膜的结晶方法 - Google Patents
非晶质硅膜的结晶方法 Download PDFInfo
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- CN100339944C CN100339944C CNB2004100577655A CN200410057765A CN100339944C CN 100339944 C CN100339944 C CN 100339944C CN B2004100577655 A CNB2004100577655 A CN B2004100577655A CN 200410057765 A CN200410057765 A CN 200410057765A CN 100339944 C CN100339944 C CN 100339944C
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000013078 crystal Substances 0.000 claims description 129
- 238000002425 crystallisation Methods 0.000 claims description 66
- 230000008025 crystallization Effects 0.000 claims description 66
- 230000000873 masking effect Effects 0.000 claims description 23
- 239000004973 liquid crystal related substance Substances 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 11
- 230000033228 biological regulation Effects 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 46
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 36
- 239000011521 glass Substances 0.000 abstract description 18
- 230000001678 irradiating effect Effects 0.000 abstract description 6
- 239000004033 plastic Substances 0.000 abstract description 3
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 230000005855 radiation Effects 0.000 description 75
- 239000010408 film Substances 0.000 description 58
- 230000014509 gene expression Effects 0.000 description 11
- 230000008018 melting Effects 0.000 description 11
- 238000002844 melting Methods 0.000 description 11
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- 239000000047 product Substances 0.000 description 8
- 238000013461 design Methods 0.000 description 5
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- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
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- 239000012535 impurity Substances 0.000 description 1
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- 239000000155 melt Substances 0.000 description 1
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- 239000011148 porous material Substances 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
- H01L21/0268—Shape of mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR84317/03 | 2003-11-26 | ||
KR84317/2003 | 2003-11-26 | ||
KR1020030084317A KR100707026B1 (ko) | 2003-11-26 | 2003-11-26 | 비정질실리콘막의 결정화 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1622280A CN1622280A (zh) | 2005-06-01 |
CN100339944C true CN100339944C (zh) | 2007-09-26 |
Family
ID=34588070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100577655A Active CN100339944C (zh) | 2003-11-26 | 2004-08-17 | 非晶质硅膜的结晶方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7033915B2 (zh) |
JP (1) | JP4691331B2 (zh) |
KR (1) | KR100707026B1 (zh) |
CN (1) | CN100339944C (zh) |
TW (1) | TWI284926B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100831227B1 (ko) * | 2001-12-17 | 2008-05-21 | 삼성전자주식회사 | 다결정 규소를 이용한 박막 트랜지스터의 제조 방법 |
JP4408667B2 (ja) * | 2003-08-22 | 2010-02-03 | 三菱電機株式会社 | 薄膜半導体の製造方法 |
KR101012789B1 (ko) | 2003-11-27 | 2011-02-08 | 삼성전자주식회사 | 규소 결정화 방법 |
JP2009289922A (ja) * | 2008-05-28 | 2009-12-10 | Sharp Corp | マスク、レーザ結晶化装置、レーザ結晶化方法、結晶材、および半導体素子 |
JP2009302251A (ja) * | 2008-06-12 | 2009-12-24 | Sharp Corp | レーザ結晶化装置、マスク、レーザ結晶化方法、結晶材、および半導体素子 |
CN103283006A (zh) * | 2011-11-07 | 2013-09-04 | 松下电器产业株式会社 | 薄膜晶体管器件的制造方法、薄膜晶体管器件以及显示装置 |
KR102014167B1 (ko) * | 2012-12-06 | 2019-10-22 | 삼성디스플레이 주식회사 | 다결정 실리콘층의 제조 방법, 상기 다결정 실리콘층의 제조 방법을 포함하는 유기 발광 표시 장치의 제조 방법, 및 그 제조 방법에 의해 제조된 유기 발광 표시 장치 |
TW201528379A (zh) * | 2013-12-20 | 2015-07-16 | Applied Materials Inc | 雙波長退火方法與設備 |
EP2899749A1 (en) * | 2014-01-24 | 2015-07-29 | Excico France | Method for forming polycrystalline silicon by laser irradiation |
JP6666426B2 (ja) * | 2016-03-04 | 2020-03-13 | 堺ディスプレイプロダクト株式会社 | レーザーアニール装置、マスク、及びレーザーアニール方法 |
KR20200120794A (ko) | 2019-04-11 | 2020-10-22 | 삼성디스플레이 주식회사 | 표시 모듈, 표시 모듈 제조 방법, 및 레이저 가공 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001057435A (ja) * | 1994-03-11 | 2001-02-27 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2002373898A (ja) * | 2001-06-13 | 2002-12-26 | Sony Corp | スイッチング素子およびその製造方法ならびに半導体装置およびその製造方法ならびに電気光学装置およびその製造方法ならびに固体撮像装置およびその製造方法 |
JP2003142401A (ja) * | 2001-10-30 | 2003-05-16 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6555449B1 (en) * | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
JP3204986B2 (ja) * | 1996-05-28 | 2001-09-04 | ザ トラスティース オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス |
US6326286B1 (en) * | 1998-06-09 | 2001-12-04 | Lg. Philips Lcd Co., Ltd. | Method for crystallizing amorphous silicon layer |
KR100296111B1 (ko) * | 1998-06-09 | 2001-10-26 | 구본준, 론 위라하디락사 | 실리콘박막을결정화하는방법과이를이용한박막트랜지스터제조방법 |
JP2000183358A (ja) * | 1998-07-17 | 2000-06-30 | Sony Corp | 薄膜半導体装置の製造方法 |
JP3491571B2 (ja) * | 1999-07-13 | 2004-01-26 | 日本電気株式会社 | 半導体薄膜の形成方法 |
US6368945B1 (en) * | 2000-03-16 | 2002-04-09 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification |
JP2001267240A (ja) * | 2000-03-22 | 2001-09-28 | Matsushita Electric Ind Co Ltd | 低温ポリシリコンtft装置の製造方法 |
US6746942B2 (en) * | 2000-09-05 | 2004-06-08 | Sony Corporation | Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device |
KR100379361B1 (ko) * | 2001-05-30 | 2003-04-07 | 엘지.필립스 엘시디 주식회사 | 실리콘막의 결정화 방법 |
US6767804B2 (en) * | 2001-11-08 | 2004-07-27 | Sharp Laboratories Of America, Inc. | 2N mask design and method of sequential lateral solidification |
US6660576B2 (en) * | 2002-03-11 | 2003-12-09 | Sharp Laboratories Of America, Inc. | Substrate and method for producing variable quality substrate material |
KR100534579B1 (ko) * | 2003-03-05 | 2005-12-07 | 삼성에스디아이 주식회사 | 다결정 실리콘 박막, 이의 제조 방법 및 이를 이용하여제조된 액티브 채널 방향 의존성이 없는 박막 트랜지스터 |
-
2003
- 2003-11-26 KR KR1020030084317A patent/KR100707026B1/ko active IP Right Grant
-
2004
- 2004-06-29 TW TW093118913A patent/TWI284926B/zh active
- 2004-06-30 US US10/881,257 patent/US7033915B2/en active Active
- 2004-07-13 JP JP2004206357A patent/JP4691331B2/ja active Active
- 2004-08-17 CN CNB2004100577655A patent/CN100339944C/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001057435A (ja) * | 1994-03-11 | 2001-02-27 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2002373898A (ja) * | 2001-06-13 | 2002-12-26 | Sony Corp | スイッチング素子およびその製造方法ならびに半導体装置およびその製造方法ならびに電気光学装置およびその製造方法ならびに固体撮像装置およびその製造方法 |
JP2003142401A (ja) * | 2001-10-30 | 2003-05-16 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1622280A (zh) | 2005-06-01 |
US20050112809A1 (en) | 2005-05-26 |
KR100707026B1 (ko) | 2007-04-11 |
JP4691331B2 (ja) | 2011-06-01 |
KR20050050716A (ko) | 2005-06-01 |
JP2005159285A (ja) | 2005-06-16 |
TW200518196A (en) | 2005-06-01 |
TWI284926B (en) | 2007-08-01 |
US7033915B2 (en) | 2006-04-25 |
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