CL2014002921A1 - Sistema de tratamiento de plasma y recubrimiento al vacio y tratamiento de superficies, comprende un mecanismo de plasma, un catado de magnetrón, un ánodos, una descarga de arco remoto, una cubierta de cátodos, una cubierta de ánodos, un sistema magnético, un suministro de energía de cátodo, y un suministro de energía de descarga de arco; método para recubrir un sustrato. - Google Patents
Sistema de tratamiento de plasma y recubrimiento al vacio y tratamiento de superficies, comprende un mecanismo de plasma, un catado de magnetrón, un ánodos, una descarga de arco remoto, una cubierta de cátodos, una cubierta de ánodos, un sistema magnético, un suministro de energía de cátodo, y un suministro de energía de descarga de arco; método para recubrir un sustrato.Info
- Publication number
- CL2014002921A1 CL2014002921A1 CL2014002921A CL2014002921A CL2014002921A1 CL 2014002921 A1 CL2014002921 A1 CL 2014002921A1 CL 2014002921 A CL2014002921 A CL 2014002921A CL 2014002921 A CL2014002921 A CL 2014002921A CL 2014002921 A1 CL2014002921 A1 CL 2014002921A1
- Authority
- CL
- Chile
- Prior art keywords
- arc discharge
- cathode
- cover
- plasma
- supply
- Prior art date
Links
- 238000010891 electric arc Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
- 238000009832 plasma treatment Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 238000004381 surface treatment Methods 0.000 title 1
- 238000001771 vacuum deposition Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32587—Triode systems
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
- H01J37/3233—Discharge generated by other radiation using charged particles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/87—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/88—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by patterning layers, e.g. by etching conductive layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/064,617 US9793098B2 (en) | 2012-09-14 | 2013-10-28 | Low pressure arc plasma immersion coating vapor deposition and ion treatment |
Publications (1)
Publication Number | Publication Date |
---|---|
CL2014002921A1 true CL2014002921A1 (es) | 2015-01-16 |
Family
ID=51795571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CL2014002921A CL2014002921A1 (es) | 2013-10-28 | 2014-10-28 | Sistema de tratamiento de plasma y recubrimiento al vacio y tratamiento de superficies, comprende un mecanismo de plasma, un catado de magnetrón, un ánodos, una descarga de arco remoto, una cubierta de cátodos, una cubierta de ánodos, un sistema magnético, un suministro de energía de cátodo, y un suministro de energía de descarga de arco; método para recubrir un sustrato. |
Country Status (10)
Country | Link |
---|---|
EP (1) | EP2866246B1 (es) |
JP (1) | JP6408862B2 (es) |
CN (1) | CN104561916B (es) |
AR (1) | AR098225A1 (es) |
BR (1) | BR102014026946A2 (es) |
CA (1) | CA2867451C (es) |
CL (1) | CL2014002921A1 (es) |
ES (1) | ES2792911T3 (es) |
PL (1) | PL2866246T3 (es) |
RU (1) | RU2695685C2 (es) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201713385D0 (en) * | 2017-08-21 | 2017-10-04 | Gencoa Ltd | Ion-enhanced deposition |
WO2019158225A1 (en) * | 2018-02-13 | 2019-08-22 | Evatec Ag | Methods of and apparatus for magnetron sputtering |
CN113169025A (zh) * | 2018-12-21 | 2021-07-23 | 瑞士艾发科技 | 用于真空等离子体处理至少一个衬底或用于制造衬底的真空处理设备和方法 |
SE542881C2 (en) * | 2018-12-27 | 2020-08-04 | Nils Brenning | Ion thruster and method for providing thrust |
US11534755B2 (en) * | 2019-04-16 | 2022-12-27 | Boe Technology Group Co., Ltd. | Micro-channel device and manufacturing method thereof and micro-fluidic system |
US11255016B2 (en) * | 2019-10-04 | 2022-02-22 | Mks Instruments, Inc. | Microwave magnetron with constant anodic impedance and systems using the same |
RU2752334C1 (ru) * | 2020-05-08 | 2021-07-26 | Федеральное государственное бюджетное учреждение науки Институт физического материаловедения Сибирского отделения Российской академии наук | Газоразрядное распылительное устройство на основе планарного магнетрона с ионным источником |
CN112251725A (zh) * | 2020-09-22 | 2021-01-22 | 安徽英力电子科技股份有限公司 | 一种电脑塑壳双层电磁屏蔽层溅镀工艺 |
WO2022117130A1 (en) * | 2020-12-03 | 2022-06-09 | Univerzita Palackého v Olomouci | Device for deposition of dielectric optical thin films by the help of sputtering plasma sources and sources of energy ions |
RU2763357C1 (ru) * | 2021-04-13 | 2021-12-28 | Александр Васильевич Вахрушев | Способ получения высококачественных пленок методом механической вибрации подложки |
CN113442247A (zh) * | 2021-06-01 | 2021-09-28 | 周顺田 | 一种竹木制玩具用防腐剂有效利用的防腐设备 |
JPWO2023053171A1 (es) * | 2021-09-28 | 2023-04-06 | ||
US20230197425A1 (en) * | 2021-12-17 | 2023-06-22 | Vapor Technologies, Inc. | Multi racetrack cathodic arc |
CN114540761A (zh) * | 2022-01-12 | 2022-05-27 | 苏州市彩衣真空科技有限公司 | 超薄pet膜表面非晶四面体碳结构的涂层工艺 |
CN114632949B (zh) * | 2022-04-18 | 2022-12-16 | 东南大学 | 一种增材制造金属零件表面防腐防污复合处理方法 |
JP7369411B1 (ja) | 2023-02-28 | 2023-10-26 | 株式会社アドバンスト・スパッタテック | スパッタリング成膜源および成膜装置 |
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US4448799A (en) * | 1983-04-21 | 1984-05-15 | Multi-Arc Vacuum Systems Inc. | Arc-initiating trigger apparatus and method for electric arc vapor deposition coating systems |
DD219354A1 (de) * | 1983-07-20 | 1985-02-27 | Hochvakuum Dresden Veb | Verfahren zur regelung der plasmaparameter in vakuumbeschichtungseinrichtungen mit bogenentladungen |
EP0306612B2 (de) * | 1987-08-26 | 1996-02-28 | Balzers Aktiengesellschaft | Verfahren zur Aufbringung von Schichten auf Substraten |
JPH0273964A (ja) * | 1988-09-09 | 1990-03-13 | Asahi Glass Co Ltd | 回転カソードを用いた薄膜形成装置 |
JPH0344463A (ja) * | 1989-07-13 | 1991-02-26 | Asahi Glass Co Ltd | シートプラズマを利用した薄膜形成方法 |
US5269898A (en) | 1991-03-20 | 1993-12-14 | Vapor Technologies, Inc. | Apparatus and method for coating a substrate using vacuum arc evaporation |
CA2065581C (en) * | 1991-04-22 | 2002-03-12 | Andal Corp. | Plasma enhancement apparatus and method for physical vapor deposition |
DE4235199C1 (es) * | 1992-10-19 | 1993-04-22 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | |
US5328712A (en) * | 1993-02-24 | 1994-07-12 | Stevison Ham Company | Method of making a bone-in meat product |
RU2138094C1 (ru) * | 1997-02-04 | 1999-09-20 | Научно-исследовательский институт ядерной физики при Томском политехническом университете | Установка для нанесения тонкослойных покрытий |
DE19853943B4 (de) | 1997-11-26 | 2006-04-20 | Vapor Technologies, Inc. (Delaware Corporation), Longmont | Katode zur Zerstäubung oder Bogenaufdampfung sowie Vorrichtung zur Beschichtung oder Ionenimplantation mit einer solchen Katode |
RU2131492C1 (ru) * | 1998-02-10 | 1999-06-10 | Закрытое акционерное общество Научно-производственный центр информационных и транспортных систем (НПЦ ИНФОТРАНС) | Способ выгрузки-укладки рельсовых плетей |
US6238537B1 (en) * | 1998-08-06 | 2001-05-29 | Kaufman & Robinson, Inc. | Ion assisted deposition source |
US6929727B2 (en) * | 1999-04-12 | 2005-08-16 | G & H Technologies, Llc | Rectangular cathodic arc source and method of steering an arc spot |
CA2305938C (en) * | 2000-04-10 | 2007-07-03 | Vladimir I. Gorokhovsky | Filtered cathodic arc deposition method and apparatus |
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CN201762438U (zh) * | 2010-08-04 | 2011-03-16 | 中国科学院金属研究所 | 电弧离子镀膜装置 |
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CL2014000626A1 (es) * | 2013-03-15 | 2014-10-03 | Vapor Technologies Inc | Un sistema de revestimiento que comprende una camara de vacio y un ensamble de revestimiento que incluye, una fuente de vapor, un soporte de sustrato, un anodo remoto, un ensamblaje de cámara de catodos, una fuente de energia principal y otra secundaria; y metodo asociado. |
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2014
- 2014-10-10 CA CA2867451A patent/CA2867451C/en not_active Expired - Fee Related
- 2014-10-27 RU RU2014143206A patent/RU2695685C2/ru active
- 2014-10-27 JP JP2014217893A patent/JP6408862B2/ja not_active Expired - Fee Related
- 2014-10-28 EP EP14190737.8A patent/EP2866246B1/en active Active
- 2014-10-28 BR BR102014026946A patent/BR102014026946A2/pt not_active Application Discontinuation
- 2014-10-28 CN CN201410592209.1A patent/CN104561916B/zh active Active
- 2014-10-28 ES ES14190737T patent/ES2792911T3/es active Active
- 2014-10-28 CL CL2014002921A patent/CL2014002921A1/es unknown
- 2014-10-28 PL PL14190737T patent/PL2866246T3/pl unknown
- 2014-10-28 AR ARP140104054A patent/AR098225A1/es unknown
Also Published As
Publication number | Publication date |
---|---|
ES2792911T3 (es) | 2020-11-12 |
RU2014143206A3 (es) | 2018-08-31 |
CN104561916B (zh) | 2018-09-18 |
RU2014143206A (ru) | 2016-05-20 |
EP2866246B1 (en) | 2020-02-26 |
CN104561916A (zh) | 2015-04-29 |
AR098225A1 (es) | 2016-05-18 |
BR102014026946A2 (pt) | 2015-09-15 |
CA2867451C (en) | 2021-06-29 |
JP2015086471A (ja) | 2015-05-07 |
RU2695685C2 (ru) | 2019-07-25 |
JP6408862B2 (ja) | 2018-10-17 |
EP2866246A1 (en) | 2015-04-29 |
PL2866246T3 (pl) | 2020-08-24 |
CA2867451A1 (en) | 2015-04-28 |
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