MX360902B - Proceso y dispositivo para generar un plasma energizado mediante una energia de microondas en el campo de una resonancia ciclotronica electronica (rce) para ejecutar un tratamiento de superficie o aplicar un recubrimiento alrededor de un componente filiforme. - Google Patents
Proceso y dispositivo para generar un plasma energizado mediante una energia de microondas en el campo de una resonancia ciclotronica electronica (rce) para ejecutar un tratamiento de superficie o aplicar un recubrimiento alrededor de un componente filiforme.Info
- Publication number
- MX360902B MX360902B MX2016012991A MX2016012991A MX360902B MX 360902 B MX360902 B MX 360902B MX 2016012991 A MX2016012991 A MX 2016012991A MX 2016012991 A MX2016012991 A MX 2016012991A MX 360902 B MX360902 B MX 360902B
- Authority
- MX
- Mexico
- Prior art keywords
- microwave energy
- ecr
- domain
- generating
- produce
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 238000004381 surface treatment Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/461—Microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Cleaning In General (AREA)
Abstract
Proceso y dispositivo para generar un plasma energizado mediante una energía de microondas en el campo de una resonancia ciclotrónica electrónica (RCE) para ejecutar un tratamiento de superficie o aplicar un recubrimiento alrededor de un componente filiforme (F). De acuerdo con el proceso: - el componente filiforme se mueve continuamente de forma lineal a través de dipolos magnéticos dispuestos de forma opuesta entre sí y alrededor de un tubo que constituye una cámara de tratamiento, - la energía de microondas se introduce entre por lo menos dos dipolos magnéticos.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1453000A FR3019708B1 (fr) | 2014-04-04 | 2014-04-04 | Procede et dispositif pour generer un plasma excite par une energie micro-onde dans le domaine de la resonnance cyclonique electronique (rce), pour realiser un traitement de surface ou revetement autour d'un element filiforme. |
PCT/FR2015/050765 WO2015150665A1 (fr) | 2014-04-04 | 2015-03-26 | Procédé et dispositif pour générer un plasma excite par une énergie micro-onde dans le domaine de la résonnance cyclonique électronique (rce), pour réaliser un traitement de surface ou revêtement autour d'un élément filiforme. |
Publications (2)
Publication Number | Publication Date |
---|---|
MX2016012991A MX2016012991A (es) | 2017-05-01 |
MX360902B true MX360902B (es) | 2018-11-21 |
Family
ID=51014483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2016012991A MX360902B (es) | 2014-04-04 | 2015-03-26 | Proceso y dispositivo para generar un plasma energizado mediante una energia de microondas en el campo de una resonancia ciclotronica electronica (rce) para ejecutar un tratamiento de superficie o aplicar un recubrimiento alrededor de un componente filiforme. |
Country Status (12)
Country | Link |
---|---|
US (1) | US10283322B2 (es) |
EP (1) | EP3127137B1 (es) |
JP (2) | JP2017517638A (es) |
KR (1) | KR102270445B1 (es) |
CN (1) | CN106416430B (es) |
BR (1) | BR112016023061B1 (es) |
CA (1) | CA2944274C (es) |
FR (1) | FR3019708B1 (es) |
MX (1) | MX360902B (es) |
RU (1) | RU2663211C2 (es) |
TW (1) | TWI646572B (es) |
WO (1) | WO2015150665A1 (es) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11037764B2 (en) * | 2017-05-06 | 2021-06-15 | Applied Materials, Inc. | Modular microwave source with local Lorentz force |
US10504699B2 (en) | 2018-04-20 | 2019-12-10 | Applied Materials, Inc. | Phased array modular high-frequency source |
KR102164479B1 (ko) * | 2019-02-14 | 2020-10-13 | 주식회사 쌤빛 | 2개의 독립적인 마이크로파 제너레이터를 이용한 선형 ecr 플라즈마 발생 장치 |
CN112063996B (zh) * | 2020-09-18 | 2021-04-20 | 上海征世科技有限公司 | 一种微波等离子体反应室及其容置基座 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6283469A (ja) * | 1985-10-08 | 1987-04-16 | Sumitomo Heavy Ind Ltd | ストリツプ用連続プラズマ照射装置 |
US5053244A (en) * | 1987-02-21 | 1991-10-01 | Leybold Aktiengesellschaft | Process for depositing silicon oxide on a substrate |
DE3843098A1 (de) * | 1988-12-21 | 1990-06-28 | Technics Plasma Gmbh | Verfahren und vorrichtung zur kunststoffbeschichtung von strangprofilen |
DE4003904A1 (de) * | 1990-02-09 | 1991-08-14 | Bosch Gmbh Robert | Vorrichtung zum behandeln von substraten in einem durch mikrowellen erzeugten, gasgestuetzten plasma |
FR2667616B1 (fr) | 1990-10-05 | 1993-01-15 | Aerospatiale | Procede et installation de metallisation en continu d'une meche de fibres etalee. |
JP2714247B2 (ja) * | 1990-10-29 | 1998-02-16 | キヤノン株式会社 | マイクロ波プラズマcvd法による大面積の機能性堆積膜を連続的に形成する方法及び装置 |
RU2078847C1 (ru) * | 1993-07-22 | 1997-05-10 | Николай Васильевич Плешивцев | Способ ионной обработки деталей машин и инструментов и устройство для его осуществления |
US5595793A (en) | 1995-04-24 | 1997-01-21 | Ceram Optec Industries, Inc. | Surface-plasma-wave coating technique for dielectric filaments |
DE19600223A1 (de) * | 1996-01-05 | 1997-07-17 | Ralf Dr Dipl Phys Spitzl | Vorrichtung zur Erzeugung von Plasmen mittels Mikrowellen |
DE19929184A1 (de) * | 1998-06-26 | 1999-12-30 | Mclaughlin James A | Vorrichtung und Verfahren für das Aufbringen von diamantartigem Kohlenstoff (DLC) oder anderen im Vakuum abscheidbaren Materialien auf ein Substrat |
FR2797372B1 (fr) | 1999-08-04 | 2002-10-25 | Metal Process | Procede de production de plasmas elementaires en vue de creer un plasma uniforme pour une surface d'utilisation et dispositif de production d'un tel plasma |
US20030000619A1 (en) | 2000-04-28 | 2003-01-02 | Masaaki Nakamura | Rubber-reinforcing fiber, process for producing the same, and rubber product and pneumatic tire each made with the same |
JP4822378B2 (ja) | 2001-02-06 | 2011-11-24 | 株式会社ブリヂストン | 成膜装置および成膜方法 |
KR100399019B1 (ko) * | 2001-04-23 | 2003-09-19 | 한국과학기술연구원 | 상온 화학 증착 시스템 및 이를 이용한 복합 금속막 제조 방법 |
US20020172780A1 (en) * | 2001-05-04 | 2002-11-21 | Halverson Ward Dean | Method and apparatus for treating surfaces with a plasma generated by electron cyclotron resonance |
US20070202248A1 (en) | 2004-03-31 | 2007-08-30 | Federico Pavan | Process for producing a metal wire coated by means of a plasma deposition technique |
CN1977067B (zh) | 2004-06-30 | 2012-04-18 | 倍耐力轮胎股份公司 | 生产涂覆有黄铜层的金属线的方法 |
FR2904178B1 (fr) * | 2006-07-21 | 2008-11-07 | Centre Nat Rech Scient | Dispositif et procede de production et/ou de confinement d'un plasma |
EP1923483A1 (en) * | 2006-11-02 | 2008-05-21 | Dow Corning Corporation | Deposition of amorphous silicon films by electron cyclotron resonance |
JP4214213B1 (ja) * | 2007-08-03 | 2009-01-28 | 国立大学法人佐賀大学 | プラズマ滅菌装置及び方法 |
FR2922358B1 (fr) * | 2007-10-16 | 2013-02-01 | Hydromecanique & Frottement | Procede de traitement de surface d'au moins une piece au moyen de sources elementaires de plasma par resonance cyclotronique electronique |
WO2009123243A1 (ja) * | 2008-03-31 | 2009-10-08 | 国立大学法人琉球大学 | プラズマ生成装置及び方法 |
US8317970B2 (en) * | 2008-06-03 | 2012-11-27 | Applied Materials, Inc. | Ceiling electrode with process gas dispersers housing plural inductive RF power applicators extending into the plasma |
US20100174245A1 (en) * | 2009-01-08 | 2010-07-08 | Ward Dean Halverson | System for pretreating the lumen of a catheter |
US7999479B2 (en) * | 2009-04-16 | 2011-08-16 | Varian Semiconductor Equipment Associates, Inc. | Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control |
TWI434624B (zh) * | 2010-07-02 | 2014-04-11 | Ind Tech Res Inst | 電子迴旋共振磁性模組與電子迴旋共振裝置 |
-
2014
- 2014-04-04 FR FR1453000A patent/FR3019708B1/fr active Active
-
2015
- 2015-03-26 US US15/301,001 patent/US10283322B2/en active Active
- 2015-03-26 EP EP15725704.9A patent/EP3127137B1/fr active Active
- 2015-03-26 CA CA2944274A patent/CA2944274C/fr active Active
- 2015-03-26 JP JP2017503078A patent/JP2017517638A/ja active Pending
- 2015-03-26 WO PCT/FR2015/050765 patent/WO2015150665A1/fr active Application Filing
- 2015-03-26 KR KR1020167030791A patent/KR102270445B1/ko active IP Right Grant
- 2015-03-26 BR BR112016023061-2A patent/BR112016023061B1/pt active IP Right Grant
- 2015-03-26 MX MX2016012991A patent/MX360902B/es active IP Right Grant
- 2015-03-26 RU RU2016138745A patent/RU2663211C2/ru active
- 2015-03-26 CN CN201580017996.XA patent/CN106416430B/zh active Active
- 2015-03-31 TW TW104110457A patent/TWI646572B/zh active
-
2019
- 2019-04-09 JP JP2019074048A patent/JP6771064B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
EP3127137B1 (fr) | 2020-08-12 |
FR3019708A1 (fr) | 2015-10-09 |
RU2016138745A (ru) | 2018-04-02 |
CA2944274C (fr) | 2022-10-18 |
JP2019135327A (ja) | 2019-08-15 |
CN106416430B (zh) | 2020-03-06 |
JP2017517638A (ja) | 2017-06-29 |
MX2016012991A (es) | 2017-05-01 |
JP6771064B2 (ja) | 2020-10-21 |
TWI646572B (zh) | 2019-01-01 |
WO2015150665A1 (fr) | 2015-10-08 |
EP3127137A1 (fr) | 2017-02-08 |
FR3019708B1 (fr) | 2016-05-06 |
US20170032939A1 (en) | 2017-02-02 |
RU2663211C2 (ru) | 2018-08-02 |
KR20160147798A (ko) | 2016-12-23 |
CN106416430A (zh) | 2017-02-15 |
KR102270445B1 (ko) | 2021-06-29 |
BR112016023061A2 (pt) | 2021-08-24 |
US10283322B2 (en) | 2019-05-07 |
RU2016138745A3 (es) | 2018-06-25 |
BR112016023061B1 (pt) | 2022-08-16 |
TW201601189A (zh) | 2016-01-01 |
CA2944274A1 (fr) | 2015-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MX2019012614A (es) | Sistema de generacion de gas reactivo y metodo de tratamiento mediante el uso de gas reactivo. | |
WO2014110446A3 (en) | Method and system for graphene formation | |
SG10201900327YA (en) | A method of cvd plasma processing with a toroidal plasma processing apparatus | |
TW201615063A (en) | Antenna for plasma generation and plasma processing device having the same | |
WO2011063146A3 (en) | Plasma source design | |
SG196762A1 (en) | High pressure, high power plasma activated conformal film deposition | |
WO2012169747A3 (ko) | 벨트형 자석을 포함한 플라즈마 발생원 및 이를 이용한 박막 증착 시스템 | |
JP2015505421A5 (es) | ||
PL2866246T3 (pl) | System powlekania próżniowego i obróbki plazmowej oraz metoda powlekania podłoża | |
MX360902B (es) | Proceso y dispositivo para generar un plasma energizado mediante una energia de microondas en el campo de una resonancia ciclotronica electronica (rce) para ejecutar un tratamiento de superficie o aplicar un recubrimiento alrededor de un componente filiforme. | |
TWI561123B (en) | Plasma chamber and apparatus for treating substrate | |
GB2540314A (en) | Etch rate enhancement for a silicon etch process through etch chamber pretreatment | |
JP2016092342A5 (es) | ||
EP3338299A4 (en) | TREATMENT-SPECIFIC SEMICONDUCTOR WAFER SUPPORT CORRECTION FOR ENHANCED THERMAL UNIFORMITY IN CHEMICAL VAPOR DEPOSITION SYSTEMS AND METHODS | |
MX2017013713A (es) | Proceso continuo de tratamiento previo de bobinas. | |
MX2019014731A (es) | Sistemas y metodos para reducir las corrientes parasitas no deseadas. | |
MY197365A (en) | Apparatus and method for the plasma treatment of wafers | |
MX342253B (es) | Dispositivo para la generacion de plasma que tiene un intervalo alto a lo largo de un eje por la resonancia ciclotronica de electrones (ecr) de un medio gaseoso. | |
WO2012087919A3 (en) | Methods and apparatus for gas delivery into plasma processing chambers | |
HK1215286A1 (zh) | 用於在多等離子中利用過程氣體循環來進行等離子過程化的裝置 | |
TW201614759A (en) | Plasma processing apparatus | |
TW201612944A (en) | Plasma processing apparatus | |
TW201614732A (en) | Method for increasing oxide etch selectivity | |
MX2015014529A (es) | Aparato para el tratamiento por plasma de superficies y metodo para el tratamiento de superficies con plasma. | |
JP2016082180A5 (es) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG | Grant or registration |