MY197365A - Apparatus and method for the plasma treatment of wafers - Google Patents

Apparatus and method for the plasma treatment of wafers

Info

Publication number
MY197365A
MY197365A MYPI2017703686A MYPI2017703686A MY197365A MY 197365 A MY197365 A MY 197365A MY PI2017703686 A MYPI2017703686 A MY PI2017703686A MY PI2017703686 A MYPI2017703686 A MY PI2017703686A MY 197365 A MY197365 A MY 197365A
Authority
MY
Malaysia
Prior art keywords
gas
wafers
gas guiding
receiving space
process chamber
Prior art date
Application number
MYPI2017703686A
Inventor
Michael Klick
Ralf Rothe
Wilfried Lerch
Johannes Rehli
Original Assignee
Centrotherm Int Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Int Ag filed Critical Centrotherm Int Ag
Publication of MY197365A publication Critical patent/MY197365A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A plasma treatment apparatus (30) for substrates and a method for the plasma treatment of wafers, in particular semiconductor wafers for semiconductor or photovoltaic applications is described. The apparatus comprises an elongated process chamber (38) having a receiving space for a wafer boat (1, 100, 200, 300), which is configured to receive a plurality of wafers as well as at least one gas guiding tube (44, 46), which extends in the longitudinal direction of the process chamber (38) and is arranged on one side of the receiving space, and at least one gas guiding tube (44, 46), which extends in the longitudinal direction of the processing tube (38) and is arranged on the opposite side of the receiving space. The gas guiding tubes (44, 46) each have a plurality of passage openings (48) for the passage of gas, the passage openings (48) are spaced along the longitudinal extension of the gas guiding tubes (44, 46) and the passage openings (48) are formed in the sides of the gas guiding tubes facing the receiving space. Furthermore, at least one gas supply device (60) and at least one gas exhaust device (62) are provided, wherein the at least one gas supply device (60) is connectable to the at least one gas guiding tube (44, 46) and the at least one gas exhaust device (62) is connectable to the other gas guiding tube (44, 46). In the method, a plurality of wafers, in particular wafers for semiconductor or photovoltaic applications, loaded into a wafer boat (1, 100, 200, 300), is received in a process chamber (38) of a plasma treatment apparatus (30) of the above type and the method comprises adjusting a desired gas atmosphere in the process chamber (38) by injecting at least one gas via at least one of the gas guiding tubes (44, 46) over the full length of the water boat and applying a high frequency AC voltage to the wafer boat (1, 100, 200, 300) to generate a plasma between the wafers received in the wafer boat (1, 100, 200, 300) during a process phase.
MYPI2017703686A 2015-04-02 2016-03-31 Apparatus and method for the plasma treatment of wafers MY197365A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015004430.3A DE102015004430B4 (en) 2015-04-02 2015-04-02 Apparatus and method for plasma treatment of wafers
PCT/EP2016/057174 WO2016156552A1 (en) 2015-04-02 2016-03-31 Device and method for plasma-treating wafers

Publications (1)

Publication Number Publication Date
MY197365A true MY197365A (en) 2023-06-14

Family

ID=55699622

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2017703686A MY197365A (en) 2015-04-02 2016-03-31 Apparatus and method for the plasma treatment of wafers

Country Status (6)

Country Link
EP (1) EP3278356A1 (en)
KR (1) KR20170135901A (en)
CN (1) CN108028162B (en)
DE (1) DE102015004430B4 (en)
MY (1) MY197365A (en)
WO (1) WO2016156552A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017214687A1 (en) 2017-08-22 2019-02-28 centrotherm international AG Processing apparatus for substrates and method for operating such a treatment apparatus
KR102205200B1 (en) * 2018-09-20 2021-01-20 주식회사 엔씨디 A apparatus for depositing a thin layer on the substrate
DE102019002647A1 (en) * 2019-04-10 2020-10-15 Plasmetrex Gmbh Wafer boat and wafer processing device
CN111180362B (en) * 2020-01-02 2023-09-01 长江存储科技有限责任公司 Gas treatment furnace and method for improving uniformity of gas treatment on surface of wafer
DE102020214063A1 (en) 2020-03-13 2021-09-16 centrotherm international AG PROCESS AND SYSTEM FOR SELECTIVE EXHAUST GAS TREATMENT
DE102020112641A1 (en) 2020-05-11 2021-11-11 Hanwha Q Cells Gmbh Holding device and use of the holding device
CN115491662B (en) * 2022-09-29 2023-11-17 西实显示高新材料(沈阳)有限公司 ICP device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6423524A (en) * 1987-07-20 1989-01-26 Toyoko Kagaku Kk Method and equipment for vertical-type low-pressure vapor growth
US5356475A (en) * 1993-02-22 1994-10-18 Lsi Logic Corporation Ceramic spacer assembly for ASM PECVD boat
US5591268A (en) * 1994-10-14 1997-01-07 Fujitsu Limited Plasma process with radicals
DE19962896A1 (en) * 1999-10-13 2001-05-03 Univ Konstanz Method and device for producing solar cells
JP4983159B2 (en) * 2006-09-01 2012-07-25 東京エレクトロン株式会社 Process for oxidizing object, oxidation apparatus and storage medium
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
JP5058727B2 (en) * 2007-09-06 2012-10-24 東京エレクトロン株式会社 Top plate structure and plasma processing apparatus using the same
US9068263B2 (en) * 2009-02-27 2015-06-30 Sandvik Thermal Process, Inc. Apparatus for manufacture of solar cells
DE102010025483A1 (en) 2010-06-29 2011-12-29 Centrotherm Thermal Solutions Gmbh + Co. Kg Method and apparatus for calibrating a wafer transport robot
KR101313262B1 (en) * 2010-07-12 2013-09-30 삼성전자주식회사 Chemical Vapor Deposition Apparatus and Method of Forming Semiconductor Thin Film Using The Same
DE102011109444A1 (en) 2011-08-04 2013-02-07 Centrotherm Photovoltaics Ag Spacing element for clamping unit used in plates of wafer boat, has communication port that is extended along transverse direction to base portion through hole which is extended between front ends of base portion in length direction

Also Published As

Publication number Publication date
WO2016156552A1 (en) 2016-10-06
CN108028162A (en) 2018-05-11
EP3278356A1 (en) 2018-02-07
DE102015004430A1 (en) 2016-10-06
KR20170135901A (en) 2017-12-08
DE102015004430B4 (en) 2017-01-05
CN108028162B (en) 2020-09-01

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