JPS6423524A - Method and equipment for vertical-type low-pressure vapor growth - Google Patents

Abstract

PURPOSE:To form a uniform thin film on a wafer by using a reaction gas in a central direction of the wafer by a method wherein, while the wafer is turned, the gas flows horizontally to the water. CONSTITUTION:A number of silicon wafers 13 are supported horizontally on a boat 14 which is hung inside a reaction tube 11 in such a way that the boat can be turned freely. A gas introduction tube 17 is inserted inside the reaction tube; gas discharge holes 18 are bored in a face facing the wafers at the gas introduction tube 17. The inside is heated by using a resistance heating furnace 12; a gas introduced from the gas introduction tube 17 while the wafer boat 14 is turned flows inside the reaction tube horizontally on the individual wafers 13 as shown by arrows; the gas passes through a discharge route 20 from discharge holes 21 at a partition wall 19, and is discharged under a low-pressure state from a discharge part 16 at a lower end of the reaction tube. A shape of the holes 18, 21 made at the gas introduction tube 17 and the partititon wall 19 is not restricted especially. However, a size of the holes is to be selected in such a way that a flow speed of the gas flowing on all the wafers is definite. By this setup, it is possible to form a uniform thin film on the wafers.