JPH0997766A - Horizontal thermal treatment device - Google Patents
Horizontal thermal treatment deviceInfo
- Publication number
- JPH0997766A JPH0997766A JP25163395A JP25163395A JPH0997766A JP H0997766 A JPH0997766 A JP H0997766A JP 25163395 A JP25163395 A JP 25163395A JP 25163395 A JP25163395 A JP 25163395A JP H0997766 A JPH0997766 A JP H0997766A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- processing container
- processing
- heat treatment
- gas introduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体ウェハ等に熱
処理を施す熱処理装置に関し、特に処理容器を水平方向
に設置した横型熱処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus for heat-treating semiconductor wafers and the like, and more particularly to a horizontal heat treatment apparatus in which a processing container is installed horizontally.
【０００２】[0002]
【従来の技術及び解決しようとする課題】半導体ウェハ
の表面に例えば酸化膜を形成したり、半導体ウェハ内に
不純物を拡散させる場合、熱処理装置が用いられる。こ
のような熱処理装置としては、半導体ウェハの搬入搬出
が容易で量産に適した横型熱処理装置と半導体ウェハの
回転が容易で大口径の半導体ウェハの処理に適した縦型
熱処理装置がある。2. Description of the Related Art A heat treatment apparatus is used when, for example, an oxide film is formed on the surface of a semiconductor wafer or impurities are diffused in the semiconductor wafer. As such a heat treatment apparatus, there are a horizontal heat treatment apparatus which is easy to carry in and out of a semiconductor wafer and suitable for mass production, and a vertical heat treatment apparatus which is easy to rotate the semiconductor wafer and suitable for processing a large-diameter semiconductor wafer.
【０００３】このうち横型熱処理装置は、図３に示すよ
うに、石英製の処理容器２１を水平方向に設置したもの
である。処理容器２１の一方端にはガス導入口２１ａが
設けられ、他方端にはキャップ２２とこのキャップ２２
に形成された排気口２２ａが設けられている。また、処
理容器２１の外周部には、処理容器２１内を所定温度に
加熱するためのヒータ２３が設けられている。処理容器
２１内には、ボート２４が収容され、このボート２４上
に被処理体である半導体ウェハ２５などが起立して載置
されている。Among them, the horizontal heat treatment apparatus is one in which a quartz processing container 21 is installed horizontally as shown in FIG. A gas inlet 21a is provided at one end of the processing container 21, and a cap 22 and the cap 22 are provided at the other end.
The exhaust port 22a formed in the above is provided. A heater 23 for heating the inside of the processing container 21 to a predetermined temperature is provided on the outer peripheral portion of the processing container 21. A boat 24 is housed in the processing container 21, and a semiconductor wafer 25, which is a target object, is erected on the boat 24.
【０００４】このような横型熱処理装置では、ヒータ２
３で加熱しながら、例えばＰＯＣｌ 3 などをガス導入口
２１ａ側からガス排気口２２ａ側へ流すことによって、
半導体ウェハ等の被処理体２５にリン（Ｐ）を拡散させ
るなどの熱処理を行うために用いる。In such a horizontal heat treatment apparatus, the heater 2
While heating at 3, for example POCl ThreeGas inlet
By flowing from the 21a side to the gas exhaust port 22a side,
Diffusing phosphorus (P) into the processing target 25 such as a semiconductor wafer
It is used for heat treatment such as heat treatment.
【０００５】ところが、この従来の横型熱処理装置で
は、被処理体２５におけるガス導入側とガス排気側にお
けるガス濃度の差が大きく、被処理体２５における熱処
理の面間均一性が悪いという問題があった。特に希薄処
理ガスを使用した場合に、下流側における処理ガスの回
り込みが悪く、全体にわたって良好な熱処理を行うこと
ができないという問題があった。However, this conventional horizontal heat treatment apparatus has a problem that the difference in gas concentration between the gas introduction side and the gas exhaust side of the object to be processed 25 is large, and the surface uniformity of the heat treatment in the object to be processed 25 is poor. It was In particular, when a dilute process gas is used, there is a problem that the process gas does not circulate on the downstream side and a good heat treatment cannot be performed on the whole.
【０００６】このような問題を解決するために、特開平
７−５８０４５号公報では、図４に示すように、被処理
体２５に対して斜め上方又は斜め下方に向けられた多数
のガス噴出孔２６ａを有する処理ガス導入ノズル２６
を、処理容器２１の長さ方向に沿って処理容器２１の側
部近傍に設けることが提案されている。In order to solve such a problem, in Japanese Patent Laid-Open No. 7-58045, as shown in FIG. 4, a large number of gas ejection holes directed obliquely upward or downward relative to the object 25 to be processed. Processing gas introduction nozzle 26 having 26a
Is provided near the side portion of the processing container 21 along the length direction of the processing container 21.
【０００７】ところが、この従来の横型熱処理装置で
は、処理容器２１の長さ方向に沿って多数のガス噴出孔
２６ａを有する処理ガス導入ノズル２６を設けているも
のの、この処理ガス導入ノズル２６は、処理容器２１の
側部近傍に一本しか設けていないことから、被処理体２
５における熱処理装置の面内均一性がかえって悪くなる
という問題があった。However, in this conventional horizontal heat treatment apparatus, although the processing gas introducing nozzle 26 having a large number of gas ejection holes 26a is provided along the length direction of the processing container 21, the processing gas introducing nozzle 26 is Since only one is provided in the vicinity of the side of the processing container 21, the object to be processed 2
There was a problem that the in-plane uniformity of the heat treatment apparatus in No. 5 was rather deteriorated.
【０００８】すなわち、この種の熱処理装置において
は、被処理体２５の面間均一性および面内均一性の双方
が良好なものであることが要求されるが、上述のように
処理容器２１の長さ方向に沿って処理ガス導入ノズル２
６を設けたとしても、面内均一性しか向上せず、ガス噴
出孔２６ａ近傍におけるガス流れの乱れによって面内均
一性は却って悪くなる。特に被処理体２５が大口径のウ
ェハになるとこの傾向は顕著になる。That is, in this type of heat treatment apparatus, it is required that both the in-plane uniformity and the in-plane uniformity of the object to be processed 25 are good. Processing gas introduction nozzle 2 along the length direction
Even if 6 is provided, only the in-plane uniformity is improved, and the in-plane uniformity is rather deteriorated due to the turbulence of the gas flow in the vicinity of the gas ejection holes 26a. This tendency becomes remarkable especially when the object to be processed 25 is a large-diameter wafer.
【０００９】本発明は、このような従来装置の問題点に
鑑みて発明されたものであり、被処理体における面間均
一性又は面内均一性が低下することを解消した熱処理装
置を提供することを目的とする。The present invention has been invented in view of the above problems of the conventional apparatus, and provides a heat treatment apparatus in which the decrease of the in-plane uniformity or the in-plane uniformity of the object to be processed is resolved. The purpose is to
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係る横型熱処理装置では、水平方向に設置
された処理容器内のボート上に被処理体を載置し、前記
処理容器内に処理ガスを導入しながら前記被処理体を熱
処理する横型熱処理装置において、前記処理容器内に、
多数のガス噴出孔を有する処理ガス導入ノズルを前記処
理容器の長さ方向に沿って複数設けると共に、各処理ガ
ス導入ノズル毎にガス流量制御装置を設けた。In order to achieve the above object, in a horizontal heat treatment apparatus according to the present invention, an object to be processed is placed on a boat in a processing container installed in a horizontal direction, In a horizontal heat treatment apparatus for heat treating the object to be treated while introducing a treatment gas into the treatment container,
A plurality of processing gas introduction nozzles having a large number of gas ejection holes were provided along the length direction of the processing container, and a gas flow rate control device was provided for each processing gas introduction nozzle.
【００１１】[0011]
【発明の実施の形態】以下、本発明に係る横型熱処理装
置の実施形態を添付図面に基づき詳細に説明する。図１
は、本発明に係る横型熱処理装置の一実施形態を示す図
であり、同図（ａ）は処理容器の長さ方向における断面
図、同図（ｂ）は同図（ａ）のＡ−Ａ線断面図であり、
１は処理容器、２はヒータ、３は処理ガス導入ノズル、
３ｇはガス噴出孔、４はボート、５は被処理体である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a horizontal heat treatment apparatus according to the present invention will be described below in detail with reference to the accompanying drawings. FIG.
FIG. 1 is a diagram showing an embodiment of a horizontal heat treatment apparatus according to the present invention, in which FIG. 1 (a) is a cross-sectional view in the length direction of a processing container, and FIG. 1 (b) is A-A in FIG. It is a line sectional view,
1 is a processing container, 2 is a heater, 3 is a processing gas introduction nozzle,
3 g is a gas ejection hole, 4 is a boat, and 5 is an object to be treated.
【００１２】処理容器１は、例えば石英などから成る耐
熱材料で形成されており、一端部が閉塞されて他端部が
開放された円筒状に形成されている。この処理容器１は
水平方向に横置きされる。この処理容器１内には、石英
から成るボート４が収容されており、このボート４上に
は半導体ウェハなどの被処理体５が多数枚起立して載置
されている。上記処理容器１の外周には、ヒータ２が処
理容器１と同軸上に設けられており、処理容器１内の全
体を加熱するように構成されている。The processing container 1 is made of a heat-resistant material such as quartz, and has a cylindrical shape with one end closed and the other end open. The processing container 1 is horizontally placed horizontally. A boat 4 made of quartz is housed in the processing container 1, and a large number of objects 5 to be processed such as semiconductor wafers are erected on the boat 4. A heater 2 is provided on the outer periphery of the processing container 1 coaxially with the processing container 1, and is configured to heat the entire inside of the processing container 1.
【００１３】上記処理容器１の開放端は、例えば石英な
どから成るキャップ７で閉塞され、このキャップ７には
ガス排気孔７ａが設けられている。また上記処理容器１
には、閉塞端を貫通して複数のガス導入ノズル（３ａ〜
３ｆ）が設けられている。図１に示す例では、処理容器
１内の上下部分に各１本（３ａ、３ｄ）、下方側部に２
本（３ｃ、３ｅ）、上方側部に２本（３ｂ、３ｆ）の計
６本が設けられている。また、各ガス導入ノズル３（３
ａ〜３ｆ）には、多数のガス噴出孔３ｇが設けられてい
ると共に、それぞれの処理ガス導入ノズル３には、ガス
発生源８からガスが供給される。この処理ガス導入ノズ
ル３の直径は約１０ｍｍに設定されると共に、ガス噴出
孔３ｇのピッチは被処理体５の配列ピッチと略同一にな
るように設定することが望ましい。The open end of the processing container 1 is closed by a cap 7 made of, for example, quartz, and the cap 7 is provided with a gas exhaust hole 7a. In addition, the processing container 1
Includes a plurality of gas introduction nozzles (3a-
3f) is provided. In the example shown in FIG. 1, one (3a, 3d) is provided in each of the upper and lower parts of the processing container 1, and two are provided in the lower part.
A total of six (3c, 3e) and two (3b, 3f) on the upper side are provided. In addition, each gas introduction nozzle 3 (3
a to 3f) are provided with a large number of gas ejection holes 3g, and a gas is supplied from a gas generation source 8 to each of the processing gas introduction nozzles 3. It is desirable that the diameter of the processing gas introduction nozzle 3 is set to about 10 mm, and the pitch of the gas ejection holes 3g is set to be substantially the same as the arrangement pitch of the objects 5 to be processed.
【００１４】図２に図１中のガス発生源を示す。このガ
ス発生源８は、窒素（Ｎ2 ）ガス源９、酸素（Ｏ2 ）ガ
ス源１０、バブリング槽１１で主として構成される。窒
素ガス源９部分にはマスフローコントローラ１２と電磁
バルブ１５が設けられ、酸素ガス源１０部分にはマスフ
ローコントローラ１３と電磁バルブ１６が設けられる。
また窒素ガス源９とバブリング槽１１間には、マスフロ
ーコントローラ１４と電磁弁１７が設けられる。バブリ
ング槽１１と処理ガス導入ノズル３との間には、電磁バ
ルブ１８、２１が設けられる。マスフローコントローラ
１４と電磁バルブ１７の間から分岐して電磁バルブ１９
が設けられ、電磁バルブ１８と電磁バルブ２１との間か
ら分岐して電磁バルブ２０が設けられる。さらに、バブ
リング槽１１には、恒温維持装置２２が設けられる。マ
スフローコントローラ１２、１３、１４で流量制御装置
６が構成される。なお、マスフローコントローラ１２、
１３、１４に代えて、流量計を用いてもよい。FIG. 2 shows the gas generating source in FIG. The gas generating source 8 is mainly composed of a nitrogen (N 2 ) gas source 9, an oxygen (O 2 ) gas source 10, and a bubbling tank 11. A mass flow controller 12 and an electromagnetic valve 15 are provided in the nitrogen gas source 9 portion, and a mass flow controller 13 and an electromagnetic valve 16 are provided in the oxygen gas source 10 portion.
A mass flow controller 14 and a solenoid valve 17 are provided between the nitrogen gas source 9 and the bubbling tank 11. Electromagnetic valves 18 and 21 are provided between the bubbling tank 11 and the processing gas introduction nozzle 3. The electromagnetic valve 19 branches off from between the mass flow controller 14 and the electromagnetic valve 17.
Is provided, and the electromagnetic valve 20 is provided branching from between the electromagnetic valve 18 and the electromagnetic valve 21. Further, the bubbling tank 11 is provided with a constant temperature maintaining device 22. The mass flow controllers 12, 13, 14 constitute the flow rate control device 6. The mass flow controller 12,
A flow meter may be used in place of 13, 14.
【００１５】このようなガス発生源では、電磁バルブ１
９、２０以外の全ての電磁バルブを開き、バブリング槽
１１に例えば液体のＰＯＣｌ3 を導入して、マスフロー
コントローラ１２、１３、１４を開く。すると窒素ガス
および酸素ガスは直接処理ガス導入ノズル３に送られる
と共に、一部の窒素ガスはバブリング装置１１に送られ
て液体のＰＯＣｌ3 をバブリングして気体のＰＯＣｌ3
が処理ガス導入ノズル３に送られることになる。この場
合、マスフローコントローラ１２、１３、１４で窒素ガ
ス９および酸素ガス１０の流量を調整できることから、
処理ガス導入ノズル３からのガス噴出量を調整できる。In such a gas generating source, the electromagnetic valve 1
All the electromagnetic valves other than 9 and 20 are opened, liquid POCl 3 is introduced into the bubbling tank 11, and the mass flow controllers 12, 13 and 14 are opened. Then, the nitrogen gas and the oxygen gas are directly sent to the process gas introduction nozzle 3, and a part of the nitrogen gas is sent to the bubbling device 11 to bubble the liquid POCl 3 to make the gaseous POCl 3.
Will be sent to the process gas introduction nozzle 3. In this case, since the mass flow controllers 12, 13 and 14 can adjust the flow rates of the nitrogen gas 9 and the oxygen gas 10,
The amount of gas ejected from the processing gas introduction nozzle 3 can be adjusted.
【００１６】図１に示すように、処理ガス導入ノズル３
を処理容器１内に挿入して設けると、処理容器１内の長
さ方向におけるガス濃度差を抑制でき、面間分布の均一
性が図れるばかりでなく、本発明ではそれぞれの処理ガ
ス導入ノズル３にガス流量制御装置８を設けていること
から、それぞれの処理ガス導入ノズル３に供給されるガ
ス流量を調整しながら処理容器１にガスを導入すること
ができ、被処理体５における面内分布の均一性も向上さ
せることができる。As shown in FIG. 1, the processing gas introducing nozzle 3
When the gas is inserted into the processing container 1, the gas concentration difference in the length direction in the processing container 1 can be suppressed, and not only the uniformity of the inter-plane distribution can be achieved. Since the gas flow rate control device 8 is provided in each of the processing gas introduction nozzles 3, the gas can be introduced into the processing container 1 while adjusting the flow rate of the gas supplied to each processing gas introduction nozzle 3, and the in-plane distribution of the object 5 to be processed can be adjusted. The uniformity can be improved.
【００１７】上述のように構成した熱処理装置の動作を
説明する。まず、処理容器１のキャップ７を取り外し
て、被処理体５を処理容器１内に搬入した後に、キャッ
プ７で覆蓋する。次に、ヒータ２を駆動することによっ
て、処理容器１内を所定の温度、例えば９００℃になる
まで加熱して安定させる。次に、処理容器１内に処理ガ
ス導入ノズル３から処理ガスを導入しつつ、常圧で熱処
理、例えばリン拡散を行う。The operation of the heat treatment apparatus configured as described above will be described. First, the cap 7 of the processing container 1 is removed, the object 5 to be processed is loaded into the processing container 1, and then covered with the cap 7. Next, by driving the heater 2, the inside of the processing container 1 is heated to a predetermined temperature, for example, 900 ° C., and is stabilized. Next, while introducing the processing gas from the processing gas introduction nozzle 3 into the processing container 1, heat treatment such as phosphorus diffusion is performed at normal pressure.
【００１８】ここで処理ガスを発生させるためには、ガ
ス発生源８のバブリング槽１１内に貯めた液体ＰＯＣｌ
3 を加熱しつつ窒素ガスによりバブリングしてＰＯＣｌ
3 を気化させて、ガス導入ノズル３へ供給される。この
気化したＰＯＣｌ3 はガス導入ノズル３内を流れなが
ら、各ガス噴出孔３ａから噴出される。Here, in order to generate the processing gas, the liquid POCl stored in the bubbling tank 11 of the gas generation source 8 is used.
Bubbling with nitrogen gas while heating 3 POCl
3 is vaporized and supplied to the gas introduction nozzle 3. The vaporized POCl 3 flows through the gas introduction nozzle 3 and is ejected from each gas ejection hole 3a.
【００１９】例えば半導体ウェハにリンを拡散させる場
合、液体ＰＯＣｌ3 を窒素ガスでバブリングして窒素ガ
ス及び酸素ガスと共に流し、ボロンを拡散する場合には
液体のＢＢｒ3 上に窒素ガスを流して窒素ガス及び酸素
ガスと共に処理容器１内へ流す。この場合、ＰＯＣｌ3
やＢＢｒ3 は比重が大きく、処理容器１の下側に溜まり
やすくなる。これによって、半導体ウェハ内の面内に拡
散の不均一性が発生するが、本発明では複数のガス導入
ノズルごとにガス流量やガス濃度を変えることができ、
比重の大きいガスが処理容器１の下側に溜まることを防
止できる。For example, when diffusing phosphorus into a semiconductor wafer, liquid POCl 3 is bubbled with nitrogen gas and made to flow together with nitrogen gas and oxygen gas, and when diffusing boron, nitrogen gas is made to flow over liquid BBr 3 by flowing nitrogen gas. Flow into the processing container 1 together with gas and oxygen gas. In this case, POCl 3
Since BBr 3 and BBr 3 have a large specific gravity, they tend to accumulate in the lower side of the processing container 1. This causes non-uniform diffusion in the surface of the semiconductor wafer, but in the present invention, the gas flow rate and the gas concentration can be changed for each of the plurality of gas introduction nozzles.
It is possible to prevent the gas having a large specific gravity from accumulating below the processing container 1.
【００２０】また、半導体ウェハ内へリンを拡散する場
合、通常、処理容器１内に窒素ガスを流す前処理、液体
ＰＯＣｌ3 を窒素ガスでバブリングして窒素ガス及び酸
素ガスと共に処理容器１に流す拡散処理、及び処理容器
１内に窒素ガスを流す後処理の順番で行われる。前処理
から拡散処理に切り替わるとき、従来の処理容器１であ
ると処理容器１の下側からＰＯＣｌ3 を含んだガスが溜
まる。また拡散処理から後処理へ切り替わる場合はＰＯ
Ｃｌ3 を含んだガスが処理容器１の下側に残る。そこ
で、前処理から拡散処理へ切り替わるときには、処理容
器１の上部にあるものから順に、また拡散処理から後処
理へ切り替わるときには、下部にあるものから順に切り
換えればこの面内均一性を向上させることができる。When phosphorus is diffused into the semiconductor wafer, usually, a pretreatment is carried out in which nitrogen gas is flown into the processing container 1, liquid POCl 3 is bubbled with nitrogen gas, and the liquid POCl 3 is flown into the processing container 1 together with nitrogen gas and oxygen gas. The diffusion process and the post-process of flowing nitrogen gas into the process container 1 are performed in this order. When switching from the pretreatment to the diffusion treatment, in the case of the conventional processing container 1, the gas containing POCl 3 accumulates from the lower side of the processing container 1. Also, when switching from diffusion processing to post-processing, PO
The gas containing Cl 3 remains below the processing container 1. Therefore, when switching from the pretreatment to the diffusion treatment, the treatment is performed from the top of the processing container 1 in order, and when the diffusion treatment is changed to the posttreatment, the treatment from the bottom is changed in order to improve the in-plane uniformity. You can
【００２１】また、ノズルに形成したガス噴出孔３ａの
向きを調整することによってガス流れをつくり、縦型炉
で半導体ウェハを回転させるのと同様の効果が得られる
と共に、各々の処理ガス導入ノズル３ごとにガス噴出孔
３ｇの位置と吸気と排気を切り換え可能にしておけば処
理容器１内のガスの流れを自由に作ることが可能にな
る。Further, by adjusting the direction of the gas ejection holes 3a formed in the nozzle, a gas flow is created, and the same effect as that of rotating a semiconductor wafer in a vertical furnace can be obtained, and each processing gas introduction nozzle If the position of the gas ejection hole 3g and the intake and the exhaust can be switched for each unit 3, the flow of gas in the processing container 1 can be freely created.
【００２２】[0022]
【発明の効果】以上のように、本発明に係る横型熱処理
装置によれば、処理容器内に多数のガス噴出孔を有する
処理ガス導入ノズルを前記処理容器の長さ方向に沿って
複数設けると共に、各処理ガス導入ノズル毎に処理ガス
の流量制御装置を設けたことから、被処理体における面
間均一性および面内均一性の双方を向上させることがで
きると共に、大口径の被処理体でも面内均一性を向上さ
せることができ、縦型炉と横型炉の双方の特徴を具備し
た横型熱処理装置となる。As described above, according to the horizontal heat treatment apparatus of the present invention, a plurality of processing gas introduction nozzles having a large number of gas ejection holes are provided in the processing container along the length direction of the processing container. Since the processing gas flow rate control device is provided for each processing gas introduction nozzle, it is possible to improve both the in-plane uniformity and the in-plane uniformity of the object to be processed, and also to the object having a large diameter. The horizontal heat treatment apparatus can improve the in-plane uniformity and has the characteristics of both the vertical furnace and the horizontal furnace.
【図１】本発明に係る横型熱処理装置の一実施形態を示
す図であり、同図（ａ）は長さ方向における断面図、同
図（ｂ）は同図（ａ）のＡ−Ａ線断面図である。FIG. 1 is a diagram showing an embodiment of a horizontal heat treatment apparatus according to the present invention, in which FIG. 1 (a) is a cross-sectional view in the longitudinal direction and FIG. 1 (b) is a line AA in FIG. 1 (a). FIG.
【図２】本発明に係る横型熱処理装置のガス発生源部分
を示す図である。FIG. 2 is a diagram showing a gas generation source portion of a horizontal heat treatment apparatus according to the present invention.
【図３】従来の横型熱処理装置を示す図である。FIG. 3 is a diagram showing a conventional horizontal heat treatment apparatus.
【図４】従来の他の横型熱処理装置を示す図である。FIG. 4 is a diagram showing another conventional horizontal heat treatment apparatus.
１・・・処理容器、２・・・ヒータ、３・・・処理ガス
導入ノズル、３ａ・・・ガス噴出孔、４・・・ボート、
５・・・被処理体、６・・・ガス流量制御装置1 ... Processing container, 2 ... Heater, 3 ... Processing gas introducing nozzle, 3a ... Gas ejection hole, 4 ... Boat,
5 ... Object to be treated, 6 ... Gas flow rate control device
───────────────────────────────────────────────────── フロントページの続き (72)発明者 白沢 勝彦 滋賀県八日市市蛇溝町長谷野1166番地の６ 京セラ株式会社滋賀工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Katsuhiko Shirasawa 6 16-1166 Haseno, Jamizo Town, Yokaichi City, Shiga Prefecture Kyocera Corporation Shiga Factory
Claims (1)
ト上に被処理体を載置し、前記処理容器内に処理ガスを
導入しながら前記被処理体を熱処理する横型熱処理装置
において、前記処理容器内に、多数のガス噴出孔を有す
る処理ガス導入ノズルを前記処理容器の長さ方向に沿っ
て複数設けると共に、各処理ガス導入ノズル毎にガス流
量制御装置を設けたことを特徴とする横型熱処理装置。1. A horizontal heat treatment apparatus in which an object to be processed is placed on a boat in a processing container installed in a horizontal direction, and the object to be processed is heat-treated while introducing a processing gas into the processing container. In the processing container, a plurality of processing gas introduction nozzles having a large number of gas ejection holes are provided along the length direction of the processing container, and a gas flow rate control device is provided for each processing gas introduction nozzle. Horizontal heat treatment equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25163395A JP3359474B2 (en) | 1995-09-28 | 1995-09-28 | Horizontal heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25163395A JP3359474B2 (en) | 1995-09-28 | 1995-09-28 | Horizontal heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0997766A true JPH0997766A (en) | 1997-04-08 |
| JP3359474B2 JP3359474B2 (en) | 2002-12-24 |
Family
ID=17225733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25163395A Expired - Fee Related JP3359474B2 (en) | 1995-09-28 | 1995-09-28 | Horizontal heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3359474B2 (en) |
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|---|---|---|---|---|
| JP2011003771A (en) * | 2009-06-19 | 2011-01-06 | Shin-Etsu Chemical Co Ltd | Semiconductor-substrate diffusion furnace |
| JP2012119453A (en) * | 2010-11-30 | 2012-06-21 | Mitsubishi Electric Corp | Impurity diffusion apparatus |
| US8277891B2 (en) | 2006-05-23 | 2012-10-02 | Tokyo Electron Limited | Method for suppressing particle generation during semiconductor manufacturing |
| JP2015188095A (en) * | 2015-05-20 | 2015-10-29 | 光洋サーモシステム株式会社 | Continuous diffusion processing apparatus |
| JP2015201650A (en) * | 2015-05-20 | 2015-11-12 | 光洋サーモシステム株式会社 | Continuous diffusion processing apparatus |
| JP2020017729A (en) * | 2018-07-24 | 2020-01-30 | エルジー エレクトロニクス インコーポレイティド | Vapor deposition equipment for solar cell and deposition method using the same |
| KR20200036595A (en) * | 2018-09-28 | 2020-04-07 | 엘지전자 주식회사 | Silicon layer deposition equipment of solar cell |
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1995
- 1995-09-28 JP JP25163395A patent/JP3359474B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8277891B2 (en) | 2006-05-23 | 2012-10-02 | Tokyo Electron Limited | Method for suppressing particle generation during semiconductor manufacturing |
| JP2011003771A (en) * | 2009-06-19 | 2011-01-06 | Shin-Etsu Chemical Co Ltd | Semiconductor-substrate diffusion furnace |
| JP2012119453A (en) * | 2010-11-30 | 2012-06-21 | Mitsubishi Electric Corp | Impurity diffusion apparatus |
| JP2015188095A (en) * | 2015-05-20 | 2015-10-29 | 光洋サーモシステム株式会社 | Continuous diffusion processing apparatus |
| JP2015201650A (en) * | 2015-05-20 | 2015-11-12 | 光洋サーモシステム株式会社 | Continuous diffusion processing apparatus |
| JP2020017729A (en) * | 2018-07-24 | 2020-01-30 | エルジー エレクトロニクス インコーポレイティド | Vapor deposition equipment for solar cell and deposition method using the same |
| US10971646B2 (en) | 2018-07-24 | 2021-04-06 | Lg Electronics Inc. | Chemical vapor deposition equipment for solar cell and deposition method thereof |
| KR20200036595A (en) * | 2018-09-28 | 2020-04-07 | 엘지전자 주식회사 | Silicon layer deposition equipment of solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3359474B2 (en) | 2002-12-24 |
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