PL2778254T3 - Osadzanie z fazy gazowej powłoki w plazmie niskociśnieniowego wyładowania łukowego i obróbka jonowa - Google Patents

Osadzanie z fazy gazowej powłoki w plazmie niskociśnieniowego wyładowania łukowego i obróbka jonowa

Info

Publication number
PL2778254T3
PL2778254T3 PL14160153T PL14160153T PL2778254T3 PL 2778254 T3 PL2778254 T3 PL 2778254T3 PL 14160153 T PL14160153 T PL 14160153T PL 14160153 T PL14160153 T PL 14160153T PL 2778254 T3 PL2778254 T3 PL 2778254T3
Authority
PL
Poland
Prior art keywords
vapor deposition
low pressure
arc plasma
plasma immersion
immersion coating
Prior art date
Application number
PL14160153T
Other languages
English (en)
Inventor
Vladimir Gorokhovsky
William Grant
Edward Taylor
Original Assignee
Vapor Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/840,305 external-priority patent/US10056237B2/en
Application filed by Vapor Technologies Inc filed Critical Vapor Technologies Inc
Publication of PL2778254T3 publication Critical patent/PL2778254T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32587—Triode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
PL14160153T 2013-03-15 2014-03-14 Osadzanie z fazy gazowej powłoki w plazmie niskociśnieniowego wyładowania łukowego i obróbka jonowa PL2778254T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/840,305 US10056237B2 (en) 2012-09-14 2013-03-15 Low pressure arc plasma immersion coating vapor deposition and ion treatment
EP14160153.4A EP2778254B1 (en) 2013-03-15 2014-03-14 Low pressure arc plasma immersion coating vapor deposition and ion treatment

Publications (1)

Publication Number Publication Date
PL2778254T3 true PL2778254T3 (pl) 2016-07-29

Family

ID=50277123

Family Applications (1)

Application Number Title Priority Date Filing Date
PL14160153T PL2778254T3 (pl) 2013-03-15 2014-03-14 Osadzanie z fazy gazowej powłoki w plazmie niskociśnieniowego wyładowania łukowego i obróbka jonowa

Country Status (10)

Country Link
EP (1) EP2778254B1 (pl)
JP (1) JP6625793B2 (pl)
CN (1) CN104046943B (pl)
AR (1) AR095602A1 (pl)
BR (1) BR102014006170A2 (pl)
CA (1) CA2846177C (pl)
CL (1) CL2014000626A1 (pl)
ES (1) ES2563862T3 (pl)
PL (1) PL2778254T3 (pl)
RU (1) RU2662912C2 (pl)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9412569B2 (en) 2012-09-14 2016-08-09 Vapor Technologies, Inc. Remote arc discharge plasma assisted processes
US9793098B2 (en) 2012-09-14 2017-10-17 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US10056237B2 (en) 2012-09-14 2018-08-21 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
CA2867451C (en) * 2013-10-28 2021-06-29 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
RU2016117814A (ru) * 2015-05-07 2017-11-14 Вейпор Текнолоджиз Инк. Процессы с использованием удаленной плазмы дугового разряда
JP6577804B2 (ja) * 2015-09-30 2019-09-18 神港精機株式会社 マグネトロンスパッタ法による成膜装置および成膜方法
FR3044023B1 (fr) 2015-11-19 2017-12-22 Herakles Dispositif pour le revetement d'un ou plusieurs fils par un procede de depot en phase vapeur
CN106893987B (zh) * 2017-04-20 2023-09-05 上海应用技术大学 一种物理气相沉积Ta-C涂层的制备方法及Ta-C涂层
CN109943801B (zh) * 2019-04-30 2023-11-14 泰安东大新材表面技术有限公司 一种气体弧光放电装置、与真空腔体的耦合系统及离子渗氮工艺
RU201611U1 (ru) * 2019-12-06 2020-12-23 Федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В.И. Ульянова (Ленина) Распыляемый блок магнетрона для осаждения твердых композиционных пленок
RU2765222C1 (ru) * 2020-12-30 2022-01-26 Тхе Баттериес Сп. з о.о. Способ формирования пленки LiCoO2 и устройство для его реализации
WO2022187444A2 (en) * 2021-03-04 2022-09-09 Yeti Coolers, Llc Surface coating of drinkware
CN113481478A (zh) * 2021-06-23 2021-10-08 合肥联顿恪智能科技有限公司 一种溅射镀膜装置及成膜方法
CN114231905A (zh) * 2021-12-17 2022-03-25 无锡极电光能科技有限公司 反应溅射法制备钙钛矿层的装置、系统装置、制备方法和用途
CN114481071B (zh) * 2022-02-11 2023-10-27 松山湖材料实验室 一种镀膜装置及dlc镀膜工艺
CN116497322B (zh) * 2023-03-30 2024-03-29 江阴市天马电源制造有限公司 高效节能高可靠真空多弧离子镀电源

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US3583899A (en) * 1968-12-18 1971-06-08 Norton Co Sputtering apparatus
CH551498A (de) * 1972-05-09 1974-07-15 Balzers Patent Beteilig Ag Anordnung zur aufstaeubung von stoffen auf unterlagen mittels einer elektrischen niederspannungsentladung.
DD219354A1 (de) * 1983-07-20 1985-02-27 Hochvakuum Dresden Veb Verfahren zur regelung der plasmaparameter in vakuumbeschichtungseinrichtungen mit bogenentladungen
ES2022946T5 (es) * 1987-08-26 1996-04-16 Balzers Hochvakuum Procedimiento para la aportacion de capas sobre sustratos.
DE3880135T2 (de) * 1988-09-08 1993-09-16 Asahi Glass Co Ltd Zerstaeubungsverfahren mittels eines bandfoermigen plasmaflusses und geraet zur handhabung dieses verfahrens.
JPH0273964A (ja) * 1988-09-09 1990-03-13 Asahi Glass Co Ltd 回転カソードを用いた薄膜形成装置
JPH03126865A (ja) * 1989-10-13 1991-05-30 Toshiba Corp 電子ビーム蒸発装置
US5269898A (en) 1991-03-20 1993-12-14 Vapor Technologies, Inc. Apparatus and method for coating a substrate using vacuum arc evaporation
US5346600A (en) * 1992-08-14 1994-09-13 Hughes Aircraft Company Plasma-enhanced magnetron-sputtered deposition of materials
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RU2138094C1 (ru) * 1997-02-04 1999-09-20 Научно-исследовательский институт ядерной физики при Томском политехническом университете Установка для нанесения тонкослойных покрытий
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CA2305938C (en) * 2000-04-10 2007-07-03 Vladimir I. Gorokhovsky Filtered cathodic arc deposition method and apparatus
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Also Published As

Publication number Publication date
CA2846177A1 (en) 2014-09-15
RU2014109915A (ru) 2015-09-20
CL2014000626A1 (es) 2014-10-03
AR095602A1 (es) 2015-10-28
EP2778254B1 (en) 2015-12-30
JP6625793B2 (ja) 2019-12-25
EP2778254A1 (en) 2014-09-17
BR102014006170A2 (pt) 2017-11-28
JP2014181406A (ja) 2014-09-29
CN104046943B (zh) 2018-06-05
CN104046943A (zh) 2014-09-17
CA2846177C (en) 2019-09-17
RU2662912C2 (ru) 2018-07-31
ES2563862T3 (es) 2016-03-16

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