CH670914A5 - - Google Patents

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Publication number
CH670914A5
CH670914A5 CH3647/86A CH364786A CH670914A5 CH 670914 A5 CH670914 A5 CH 670914A5 CH 3647/86 A CH3647/86 A CH 3647/86A CH 364786 A CH364786 A CH 364786A CH 670914 A5 CH670914 A5 CH 670914A5
Authority
CH
Switzerland
Prior art keywords
membrane
memory
memory according
substrate
states
Prior art date
Application number
CH3647/86A
Other languages
German (de)
English (en)
Inventor
Radivoje Popovic
Katalin Solt
Heinz Lienhard
Original Assignee
Landis & Gyr Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Landis & Gyr Ag filed Critical Landis & Gyr Ag
Priority to CH3647/86A priority Critical patent/CH670914A5/de
Priority to AT87111361T priority patent/ATE72075T1/de
Priority to EP87111361A priority patent/EP0259614B1/de
Priority to DE8787111361T priority patent/DE3776237D1/de
Priority to JP62218110A priority patent/JPS6373554A/ja
Priority to YU01667/87A priority patent/YU166787A/xx
Priority to NO873761A priority patent/NO873761L/no
Publication of CH670914A5 publication Critical patent/CH670914A5/de
Priority to US07/417,338 priority patent/US4979149A/en
Priority to GR920400471T priority patent/GR3004073T3/el

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/04—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using capacitive elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Credit Cards Or The Like (AREA)
  • Measuring Fluid Pressure (AREA)
  • Signal Processing For Digital Recording And Reproducing (AREA)
CH3647/86A 1986-09-08 1986-09-10 CH670914A5 (US06653308-20031125-C00197.png)

Priority Applications (9)

Application Number Priority Date Filing Date Title
CH3647/86A CH670914A5 (US06653308-20031125-C00197.png) 1986-09-10 1986-09-10
AT87111361T ATE72075T1 (de) 1986-09-10 1987-08-06 Speicher fuer digitale elektronische signale.
EP87111361A EP0259614B1 (de) 1986-09-10 1987-08-06 Speicher für digitale elektronische Signale
DE8787111361T DE3776237D1 (de) 1986-09-10 1987-08-06 Speicher fuer digitale elektronische signale.
JP62218110A JPS6373554A (ja) 1986-09-10 1987-09-02 デジタル信号記憶装置
YU01667/87A YU166787A (en) 1986-09-08 1987-09-08 Memory for digital electronic signals process for preparing derivatives 2,3,4,5,6,7-hexahydro-2,7-methano-1,5-benzoxazinone
NO873761A NO873761L (no) 1986-09-10 1987-09-09 Lager for digitale elektroniske signaler.
US07/417,338 US4979149A (en) 1986-09-10 1989-10-05 Non-volatile memory device including a micro-mechanical storage element
GR920400471T GR3004073T3 (US06653308-20031125-C00197.png) 1986-09-10 1992-03-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH3647/86A CH670914A5 (US06653308-20031125-C00197.png) 1986-09-10 1986-09-10

Publications (1)

Publication Number Publication Date
CH670914A5 true CH670914A5 (US06653308-20031125-C00197.png) 1989-07-14

Family

ID=4260485

Family Applications (1)

Application Number Title Priority Date Filing Date
CH3647/86A CH670914A5 (US06653308-20031125-C00197.png) 1986-09-08 1986-09-10

Country Status (8)

Country Link
US (1) US4979149A (US06653308-20031125-C00197.png)
EP (1) EP0259614B1 (US06653308-20031125-C00197.png)
JP (1) JPS6373554A (US06653308-20031125-C00197.png)
AT (1) ATE72075T1 (US06653308-20031125-C00197.png)
CH (1) CH670914A5 (US06653308-20031125-C00197.png)
DE (1) DE3776237D1 (US06653308-20031125-C00197.png)
GR (1) GR3004073T3 (US06653308-20031125-C00197.png)
NO (1) NO873761L (US06653308-20031125-C00197.png)

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5538753A (en) * 1991-10-14 1996-07-23 Landis & Gyr Betriebs Ag Security element
EP0537439B2 (de) * 1991-10-14 2003-07-09 OVD Kinegram AG Sicherheitselement
GB9309327D0 (en) * 1993-05-06 1993-06-23 Smith Charles G Bi-stable memory element
US6100109A (en) * 1994-11-02 2000-08-08 Siemens Aktiengesellschaft Method for producing a memory device
DE59509883D1 (de) * 1995-08-09 2002-01-10 Infineon Technologies Ag Speichervorrichtung und Herstellungsverfahren
US5638946A (en) * 1996-01-11 1997-06-17 Northeastern University Micromechanical switch with insulated switch contact
US6168395B1 (en) 1996-02-10 2001-01-02 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Bistable microactuator with coupled membranes
US6237590B1 (en) * 1997-09-18 2001-05-29 Delsys Pharmaceutical Corporation Dry powder delivery system apparatus
US6188301B1 (en) * 1998-11-13 2001-02-13 General Electric Company Switching structure and method of fabrication
US6525483B1 (en) * 1998-12-22 2003-02-25 Koninklijke Philips Electronics N.V. Display device comprising a light guide with electrode voltages dependent on previously applied electrode voltages
US6211580B1 (en) * 1998-12-29 2001-04-03 Honeywell International Inc. Twin configuration for increased life time in touch mode electrostatic actuators
US6054745A (en) * 1999-01-04 2000-04-25 International Business Machines Corporation Nonvolatile memory cell using microelectromechanical device
US6509605B1 (en) * 1999-03-18 2003-01-21 Cavendish Kinetics Limited Flash memory cell having a flexible element
EP2239794A3 (en) * 1999-07-02 2011-03-23 President and Fellows of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
JP2001102597A (ja) 1999-09-30 2001-04-13 Fuji Electric Co Ltd 半導体構造およびその製造方法
US6716657B1 (en) * 2000-05-26 2004-04-06 Agere Systems Inc Method for interconnecting arrays of micromechanical devices
US6473361B1 (en) 2000-11-10 2002-10-29 Xerox Corporation Electromechanical memory cell
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US7563711B1 (en) * 2001-07-25 2009-07-21 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6911682B2 (en) * 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US7566478B2 (en) 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6574130B2 (en) * 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6924538B2 (en) 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7176505B2 (en) 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US20060182389A1 (en) * 2002-03-26 2006-08-17 Duine Peter A Display device comprising a light transmitting first plate and light-absorbing means
US7335395B2 (en) 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
CN1929067B (zh) * 2002-07-26 2010-05-26 松下电器产业株式会社 开关
JP4186727B2 (ja) * 2002-07-26 2008-11-26 松下電器産業株式会社 スイッチ
US6972881B1 (en) 2002-11-21 2005-12-06 Nuelight Corp. Micro-electro-mechanical switch (MEMS) display panel with on-glass column multiplexers using MEMS as mux elements
US7560136B2 (en) 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
FR2852441A1 (fr) * 2003-03-14 2004-09-17 St Microelectronics Sa Dispositif de memoire
WO2005031299A2 (en) 2003-05-14 2005-04-07 Nantero, Inc. Sensor platform using a non-horizontally oriented nanotube element
US7199498B2 (en) 2003-06-02 2007-04-03 Ambient Systems, Inc. Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same
US7211854B2 (en) * 2003-06-09 2007-05-01 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
US7274064B2 (en) 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
FR2858459B1 (fr) * 2003-08-01 2006-03-10 Commissariat Energie Atomique Commutateur micro-mecanique bistable, methode d'actionnement et procede de realisation correspondant
WO2005017967A2 (en) * 2003-08-13 2005-02-24 Nantero, Inc. Nanotube device structure and methods of fabrication
CA2535634A1 (en) 2003-08-13 2005-05-26 Nantero, Inc Nanotube-based switching elements with multiple controls and circuits made from same
US7115960B2 (en) * 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
US7289357B2 (en) * 2003-08-13 2007-10-30 Nantero, Inc. Isolation structure for deflectable nanotube elements
CN101562049B (zh) * 2003-08-13 2012-09-05 南泰若股份有限公司 具有多个控件的基于纳米管的开关元件及由其制成的电路
US7416993B2 (en) * 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
US7215229B2 (en) * 2003-09-17 2007-05-08 Schneider Electric Industries Sas Laminated relays with multiple flexible contacts
JP4626142B2 (ja) * 2003-11-18 2011-02-02 株式会社日立製作所 装置およびそれを用いたデータ処理方法
US7528437B2 (en) * 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
JP2008502143A (ja) * 2004-05-24 2008-01-24 トラスティーズ オブ ボストン ユニバーシティ 制御可能なナノメカニカルメモリ素子
US7709880B2 (en) * 2004-06-09 2010-05-04 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
US7329931B2 (en) 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and transistors
US7288970B2 (en) 2004-06-18 2007-10-30 Nantero, Inc. Integrated nanotube and field effect switching device
US7330709B2 (en) * 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and logic
US7164744B2 (en) * 2004-06-18 2007-01-16 Nantero, Inc. Nanotube-based logic driver circuits
US7161403B2 (en) 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US7167026B2 (en) * 2004-06-18 2007-01-23 Nantero, Inc. Tri-state circuit using nanotube switching elements
WO2007024204A2 (en) * 2004-07-19 2007-03-01 Ambient Systems, Inc. Nanometer-scale electrostatic and electromagnetic motors and generators
TWI399864B (zh) 2004-09-16 2013-06-21 Nantero Inc 使用奈米管之發光體及其製造方法
WO2006137876A2 (en) 2004-09-22 2006-12-28 Nantero, Inc. Random access memory including nanotube switching elements
ATE547766T1 (de) * 2004-10-15 2012-03-15 Nxp Bv Verfahren zum betrieb eines rfid-systems
US7046539B1 (en) 2004-11-02 2006-05-16 Sandia Corporation Mechanical memory
US7598544B2 (en) * 2005-01-14 2009-10-06 Nanotero, Inc. Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
US8362525B2 (en) 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same
US7579618B2 (en) 2005-03-02 2009-08-25 Northrop Grumman Corporation Carbon nanotube resonator transistor and method of making same
US7835170B2 (en) 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
TWI324773B (en) 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
US7394687B2 (en) * 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
US7782650B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8013363B2 (en) * 2005-05-09 2011-09-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9196615B2 (en) 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8513768B2 (en) 2005-05-09 2013-08-20 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8217490B2 (en) 2005-05-09 2012-07-10 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7781862B2 (en) 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US7928521B1 (en) 2005-05-31 2011-04-19 Nantero, Inc. Non-tensioned carbon nanotube switch design and process for making same
US7915122B2 (en) * 2005-06-08 2011-03-29 Nantero, Inc. Self-aligned cell integration scheme
JP5054936B2 (ja) * 2005-06-22 2012-10-24 パナソニック株式会社 電気機械メモリ、それを用いた電気回路及び電気機械メモリの駆動方法
US7349236B2 (en) * 2005-06-24 2008-03-25 Xerox Corporation Electromechanical memory cell with torsional movement
US7538040B2 (en) * 2005-06-30 2009-05-26 Nantero, Inc. Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
GB0515980D0 (en) * 2005-08-03 2005-09-07 Cavendish Kinetics Ltd Memory cell for a circuit and method of operation therefor
CN101287698A (zh) 2005-09-06 2008-10-15 诺华丝国际股份有限公司 含有甲硫氨酸的羟基类似物以及衍生物的罐装和干法涂布的抗微生物组合物
WO2007038558A2 (en) * 2005-09-27 2007-04-05 Cornell Research Foundation, Inc. Shape memory device
GB0525025D0 (en) * 2005-12-08 2006-01-18 Cavendish Kinetics Ltd memory Cell and Array
US7336527B1 (en) 2005-12-14 2008-02-26 International Business Machines Corporation Electromechanical storage device
KR100827705B1 (ko) * 2006-10-23 2008-05-07 삼성전자주식회사 비 휘발성 메모리 소자 및 그의 제조방법
KR100834829B1 (ko) * 2006-12-19 2008-06-03 삼성전자주식회사 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법
FR2910706B1 (fr) * 2006-12-21 2009-03-20 Commissariat Energie Atomique Element d'interconnexion a base de nanotubes de carbone
WO2008124084A2 (en) 2007-04-03 2008-10-16 Pinkerton Joseph F Nanoelectromechanical systems and methods for making the same
WO2009008929A2 (en) 2007-04-09 2009-01-15 Northeastern University Bistable nanoswitch
JP5026144B2 (ja) * 2007-05-18 2012-09-12 日本電信電話株式会社 記憶素子
WO2009005908A2 (en) * 2007-05-22 2009-01-08 Nantero, Inc. Triodes using nanofabric articles and methods of making the same
US8134220B2 (en) * 2007-06-22 2012-03-13 Nantero Inc. Two-terminal nanotube devices including a nanotube bridge and methods of making same
US8704314B2 (en) 2007-12-06 2014-04-22 Massachusetts Institute Of Technology Mechanical memory transistor
US9263126B1 (en) 2010-09-01 2016-02-16 Nantero Inc. Method for dynamically accessing and programming resistive change element arrays
US8253171B1 (en) 2009-08-27 2012-08-28 Lockheed Martin Corporation Two terminal nanotube switch, memory array incorporating the same and method of making
US20130113810A1 (en) * 2011-11-04 2013-05-09 Qualcomm Mems Technologies, Inc. Sidewall spacers along conductive lines
ITTO20120224A1 (it) 2012-03-15 2013-09-16 St Microelectronics Srl Elemento di memoria elettromeccanico integrato e memoria elettronica comprendente il medesimo
KR101928344B1 (ko) * 2012-10-24 2018-12-13 삼성전자주식회사 나노 공진 장치 및 방법
FR3085786B1 (fr) * 2018-09-11 2021-02-19 Commissariat Energie Atomique Cellule de memorisation en logique capacitive

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4087810A (en) * 1976-06-30 1978-05-02 International Business Machines Corporation Membrane deformographic display, and method of making
FR2376549A1 (fr) * 1977-01-04 1978-07-28 Thomson Csf Systeme bistable a electrets
US4113360A (en) * 1977-03-28 1978-09-12 Siemens Aktiengesellschaft Indicating device for illustrating symbols of all kinds
US4229732A (en) * 1978-12-11 1980-10-21 International Business Machines Corporation Micromechanical display logic and array
EP0046873A1 (en) * 1980-09-02 1982-03-10 Texas Instruments Incorporated Deformable mirror light modulator
US4441791A (en) * 1980-09-02 1984-04-10 Texas Instruments Incorporated Deformable mirror light modulator
US4356730A (en) * 1981-01-08 1982-11-02 International Business Machines Corporation Electrostatically deformographic switches
US4543457A (en) * 1984-01-25 1985-09-24 Transensory Devices, Inc. Microminiature force-sensitive switch
US4736202A (en) * 1984-08-21 1988-04-05 Bos-Knox, Ltd. Electrostatic binary switching and memory devices
US4704707A (en) * 1984-08-21 1987-11-03 Bos-Knox, Ltd. Electrostatic random access memory
US4570139A (en) * 1984-12-14 1986-02-11 Eaton Corporation Thin-film magnetically operated micromechanical electric switching device
EP0205450A1 (en) * 1984-12-19 1986-12-30 SIMPSON, George, R. Electrostatic binary switching and memory devices

Also Published As

Publication number Publication date
EP0259614B1 (de) 1992-01-22
NO873761D0 (no) 1987-09-09
JPS6373554A (ja) 1988-04-04
ATE72075T1 (de) 1992-02-15
GR3004073T3 (US06653308-20031125-C00197.png) 1993-03-31
NO873761L (no) 1988-03-11
DE3776237D1 (de) 1992-03-05
US4979149A (en) 1990-12-18
EP0259614A1 (de) 1988-03-16

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