CH619073A5 - - Google Patents

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Publication number
CH619073A5
CH619073A5 CH202776A CH202776A CH619073A5 CH 619073 A5 CH619073 A5 CH 619073A5 CH 202776 A CH202776 A CH 202776A CH 202776 A CH202776 A CH 202776A CH 619073 A5 CH619073 A5 CH 619073A5
Authority
CH
Switzerland
Prior art keywords
solders
tin
cadmium
soft
semiconductor
Prior art date
Application number
CH202776A
Other languages
German (de)
English (en)
Inventor
Helmuth Froloff
Theodor Tovar
Original Assignee
Semikron Gleichrichterbau
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Gleichrichterbau filed Critical Semikron Gleichrichterbau
Publication of CH619073A5 publication Critical patent/CH619073A5/de

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
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    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/838Bonding techniques
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    • H01L2924/11Device type
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    • H01L2924/1203Rectifying Diode
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    • H01L2924/351Thermal stress

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
CH202776A 1975-04-05 1976-02-19 CH619073A5 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2514922A DE2514922C2 (de) 1975-04-05 1975-04-05 Gegen thermische Wechselbelastung beständiges Halbleiterbauelement

Publications (1)

Publication Number Publication Date
CH619073A5 true CH619073A5 (en:Method) 1980-08-29

Family

ID=5943167

Family Applications (1)

Application Number Title Priority Date Filing Date
CH202776A CH619073A5 (en:Method) 1975-04-05 1976-02-19

Country Status (5)

Country Link
US (1) US4005454A (en:Method)
BR (1) BR7602045A (en:Method)
CH (1) CH619073A5 (en:Method)
DE (1) DE2514922C2 (en:Method)
GB (2) GB1548756A (en:Method)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5295972A (en) * 1976-02-09 1977-08-12 Hitachi Ltd Semiconductor element
US4257156A (en) * 1979-03-09 1981-03-24 General Electric Company Method for thermo-compression diffusion bonding each side of a substrateless semiconductor device wafer to respective structured copper strain buffers
WO1980001967A1 (en) * 1979-03-08 1980-09-18 Gen Electric Thermo-compression bonding a semiconductor to strain buffer
US4498096A (en) * 1981-01-30 1985-02-05 Motorola, Inc. Button rectifier package for non-planar die
JPS59193036A (ja) * 1983-04-16 1984-11-01 Toshiba Corp 半導体装置の製造方法
DE3513530A1 (de) * 1984-06-01 1985-12-05 Bbc Brown Boveri & Cie Verfahren zur herstellung von leistungshalbleitermodulen mit isoliertem aufbau
US4954870A (en) * 1984-12-28 1990-09-04 Kabushiki Kaisha Toshiba Semiconductor device
DE3736671C1 (en) * 1987-10-29 1989-06-08 Semikron Elektronik Gmbh Method for producing semiconductor components
DE4107660C2 (de) * 1991-03-09 1995-05-04 Bosch Gmbh Robert Verfahren zur Montage von Silizium-Plättchen auf metallischen Montageflächen
US5441576A (en) * 1993-02-01 1995-08-15 Bierschenk; James L. Thermoelectric cooler
GB2300375B (en) * 1994-08-01 1998-02-25 Nippon Denso Co Bonding method for electric element
JP3271475B2 (ja) * 1994-08-01 2002-04-02 株式会社デンソー 電気素子の接合材料および接合方法
DE19632378B4 (de) * 1996-08-10 2007-01-25 Robert Bosch Gmbh Diffusionslötverbindung und Verfahren zur Herstellung von Diffusionslötverbindungen
US6179935B1 (en) * 1997-04-16 2001-01-30 Fuji Electric Co., Ltd. Solder alloys
KR20010090720A (ko) 1998-09-03 2001-10-19 추후제출 비례 마이크로기계 장치
US6523560B1 (en) 1998-09-03 2003-02-25 General Electric Corporation Microvalve with pressure equalization
US7011378B2 (en) 1998-09-03 2006-03-14 Ge Novasensor, Inc. Proportional micromechanical valve
US6139979A (en) * 1999-01-28 2000-10-31 Murata Manufacturing Co., Ltd. Lead-free solder and soldered article
GB2346383B (en) * 1999-01-28 2001-01-17 Murata Manufacturing Co Lead-free solder and soldered article
US6845962B1 (en) * 2000-03-22 2005-01-25 Kelsey-Hayes Company Thermally actuated microvalve device
US6505811B1 (en) 2000-06-27 2003-01-14 Kelsey-Hayes Company High-pressure fluid control valve assembly having a microvalve device attached to fluid distributing substrate
US6897567B2 (en) * 2000-07-31 2005-05-24 Romh Co., Ltd. Method of making wireless semiconductor device, and leadframe used therefor
US20070251586A1 (en) * 2003-11-24 2007-11-01 Fuller Edward N Electro-pneumatic control valve with microvalve pilot
US8011388B2 (en) * 2003-11-24 2011-09-06 Microstaq, INC Thermally actuated microvalve with multiple fluid ports
KR20060109959A (ko) * 2003-11-24 2006-10-23 알루미나 마이크로 엘엘씨 가변형 변위 압축기 제어용 마이크로밸브 장치
EP1723359A2 (en) * 2004-02-27 2006-11-22 Alumina Micro LLC Hybrid micro/macro plate valve
US7803281B2 (en) * 2004-03-05 2010-09-28 Microstaq, Inc. Selective bonding for forming a microvalve
US7181919B2 (en) * 2004-03-31 2007-02-27 Denso Corporation System utilizing waste heat of internal combustion engine
US7156365B2 (en) * 2004-07-27 2007-01-02 Kelsey-Hayes Company Method of controlling microvalve actuator
CN100591916C (zh) * 2005-01-14 2010-02-24 麦克罗斯塔克公司 用于控制变容积式压缩机的方法和系统
CN101617155B (zh) 2006-12-15 2012-03-21 麦克罗斯塔克公司 微阀装置
CN101675280B (zh) 2007-03-30 2013-05-15 盾安美斯泰克公司(美国) 先导式微型滑阀
US8387659B2 (en) 2007-03-31 2013-03-05 Dunan Microstaq, Inc. Pilot operated spool valve
US8662468B2 (en) * 2008-08-09 2014-03-04 Dunan Microstaq, Inc. Microvalve device
US8113482B2 (en) * 2008-08-12 2012-02-14 DunAn Microstaq Microvalve device with improved fluid routing
WO2010065804A2 (en) 2008-12-06 2010-06-10 Microstaq, Inc. Fluid flow control assembly
WO2010117874A2 (en) 2009-04-05 2010-10-14 Microstaq, Inc. Method and structure for optimizing heat exchanger performance
WO2011022267A2 (en) 2009-08-17 2011-02-24 Microstaq, Inc. Micromachined device and control method
US8956884B2 (en) 2010-01-28 2015-02-17 Dunan Microstaq, Inc. Process for reconditioning semiconductor surface to facilitate bonding
CN102792419B (zh) 2010-01-28 2015-08-05 盾安美斯泰克股份有限公司 高温选择性融合接合的工艺与构造
US8996141B1 (en) 2010-08-26 2015-03-31 Dunan Microstaq, Inc. Adaptive predictive functional controller
KR101204187B1 (ko) * 2010-11-02 2012-11-23 삼성전기주식회사 소성 접합을 이용한 파워 모듈 및 그 제조 방법
US8925793B2 (en) 2012-01-05 2015-01-06 Dunan Microstaq, Inc. Method for making a solder joint
US9140613B2 (en) 2012-03-16 2015-09-22 Zhejiang Dunan Hetian Metal Co., Ltd. Superheat sensor
US9188375B2 (en) 2013-12-04 2015-11-17 Zhejiang Dunan Hetian Metal Co., Ltd. Control element and check valve assembly
US20180226533A1 (en) * 2017-02-08 2018-08-09 Amberwave Inc. Thin Film Solder Bond
CN111471889B (zh) * 2020-04-14 2021-01-05 中机智能装备创新研究院(宁波)有限公司 一种锡基巴氏合金及其制备方法和用途

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE806820C (de) * 1949-10-25 1951-06-18 Rau Fa G Weichlot
BE550714A (en:Method) * 1955-09-01
DE1080838B (de) * 1958-01-13 1960-04-28 Licentia Gmbh Legierung zum Weichloeten
US3046651A (en) * 1958-03-14 1962-07-31 Honeywell Regulator Co Soldering technique
BE590792A (en:Method) * 1959-05-12
NL121712C (en:Method) * 1959-10-15 1900-01-01
DE1196793B (de) * 1961-08-28 1965-07-15 Elektronik M B H Verfahren zum Kontaktieren von Halbleiter-koerpern fuer Halbleiterbauelemente
DE1439129B2 (de) * 1962-02-19 1975-08-07 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Verfahren zum Herstellen von Silizium-Leistungsgleichrichtern
DE1298387C2 (de) * 1964-02-06 1973-07-26 Semikron Gleichrichterbau Halbleiter-Anordnung
US3331997A (en) * 1964-12-31 1967-07-18 Wagner Electric Corp Silicon diode with solder composition attaching ohmic contacts
US3414969A (en) * 1965-02-25 1968-12-10 Solitron Devices Connection arrangement for three-element component to a micro-electronics circuit
US3429040A (en) * 1965-06-18 1969-02-25 Ibm Method of joining a component to a substrate
DE1589543B2 (de) * 1967-09-12 1972-08-24 Robert Bosch Gmbh, 7000 Stuttgart Halbleiterbauelement und verfahren zu seiner weichlotkontaktierung
US3680196A (en) * 1970-05-08 1972-08-01 Us Navy Process for bonding chip devices to hybrid circuitry
US3930306A (en) * 1974-04-24 1976-01-06 General Instrument Corporation Process for attaching a lead member to a semiconductor device

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US4005454A (en) 1977-01-25
DE2514922C2 (de) 1983-01-27
BR7602045A (pt) 1976-10-05
GB1548755A (en) 1979-07-18
GB1548756A (en) 1979-07-18
DE2514922A1 (de) 1976-10-14

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