CH616347A5 - - Google Patents

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Publication number
CH616347A5
CH616347A5 CH1309676A CH1309676A CH616347A5 CH 616347 A5 CH616347 A5 CH 616347A5 CH 1309676 A CH1309676 A CH 1309676A CH 1309676 A CH1309676 A CH 1309676A CH 616347 A5 CH616347 A5 CH 616347A5
Authority
CH
Switzerland
Prior art keywords
gas
plasma
anode
arc
reactants
Prior art date
Application number
CH1309676A
Other languages
English (en)
French (fr)
Inventor
Donald Ray Carson
Calvin Brewster Holden
Original Assignee
Ppg Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ppg Industries Inc filed Critical Ppg Industries Inc
Publication of CH616347A5 publication Critical patent/CH616347A5/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/002—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor carried out in the plasma state
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/02—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor for obtaining at least one reaction product which, at normal temperature, is in the solid state
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/06—Metal silicides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C01B35/04—Metal borides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/01—Handling plasma, e.g. of subatomic particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/3405—Arrangements for stabilising or constricting the arc, e.g. by an additional gas flow
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/3468—Vortex generators
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder, liquid
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/40—Details, e.g. electrodes, nozzles using applied magnetic fields, e.g. for focusing or rotating the arc
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S422/00—Chemical apparatus and process disinfecting, deodorizing, preserving, or sterilizing
    • Y10S422/906—Plasma or ion generation means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S423/00—Chemistry of inorganic compounds
    • Y10S423/09—Reaction techniques
    • Y10S423/10—Plasma energized

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Silicon Compounds (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
CH1309676A 1975-11-12 1976-10-15 CH616347A5 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/631,241 US4022872A (en) 1975-11-12 1975-11-12 Process for preparing finely-divided refractory powders

Publications (1)

Publication Number Publication Date
CH616347A5 true CH616347A5 (sv) 1980-03-31

Family

ID=24530359

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1309676A CH616347A5 (sv) 1975-11-12 1976-10-15

Country Status (12)

Country Link
US (1) US4022872A (sv)
JP (1) JPS5261194A (sv)
BE (1) BE848199A (sv)
CA (1) CA1065576A (sv)
CH (1) CH616347A5 (sv)
DE (1) DE2650869C3 (sv)
FR (1) FR2331409A1 (sv)
GB (1) GB1560740A (sv)
IT (1) IT1070203B (sv)
NL (1) NL167293C (sv)
NO (1) NO144628C (sv)
SE (1) SE419333B (sv)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353885A (en) * 1979-02-12 1982-10-12 Ppg Industries, Inc. Titanium diboride article and method for preparing same
US4235857A (en) * 1979-07-02 1980-11-25 Ford Motor Company Method of nitriding silicon
US4515763A (en) * 1981-07-15 1985-05-07 Board Of Trustees Of Leland Stanford Jr. Univeristy High specific surface area carbides and nitrides
AT382595B (de) * 1982-12-22 1987-03-10 Sueddeutsche Kalkstickstoff Anlage zur erzeugung von calciumcarbid
US4559439A (en) * 1983-01-21 1985-12-17 Plasma Energy Corporation Field convertible plasma generator and its method of operation
US4558017A (en) * 1984-05-14 1985-12-10 Allied Corporation Light induced production of ultrafine powders comprising metal silicide powder and silicon
US4689129A (en) * 1985-07-16 1987-08-25 The Dow Chemical Company Process for the preparation of submicron-sized titanium diboride
US4687560A (en) * 1985-08-16 1987-08-18 The United States Of America As Represented By The United States Department Of Energy Method of synthesizing a plurality of reactants and producing thin films of electro-optically active transition metal oxides
US4895765A (en) * 1985-09-30 1990-01-23 Union Carbide Corporation Titanium nitride and zirconium nitride coating compositions, coated articles and methods of manufacture
US4654076A (en) * 1986-01-30 1987-03-31 Plasma Energy Corporation Apparatus and method for treating metallic fines
JPS62168896U (sv) * 1986-04-16 1987-10-26
US4851262A (en) * 1987-05-27 1989-07-25 Carnegie-Mellon University Method of making carbide, nitride and boride powders
JPH0643248B2 (ja) * 1987-09-18 1994-06-08 科学技術庁金属材料技術研究所長 遷移金属ほう化物繊維の製造法
GB8809651D0 (en) * 1988-04-23 1988-05-25 Tioxide Group Plc Nitrogen compounds
DE3840316C1 (sv) * 1988-11-30 1990-04-19 Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe, De
GB8913106D0 (en) * 1989-06-07 1989-07-26 Tioxide Group Plc Production of nitrogen compounds
US5302366A (en) * 1991-03-28 1994-04-12 Phillips Petroleum Company Production of silicon product containing both carbon and nitrogen
GB9306802D0 (en) * 1993-04-01 1993-05-26 Tioxide Specialties Ltd Process for the production of silicon nitride
JPH08170174A (ja) * 1994-12-14 1996-07-02 Nec Corp ＴｉＮ膜の形成方法
US7576296B2 (en) * 1995-03-14 2009-08-18 Battelle Energy Alliance, Llc Thermal synthesis apparatus
US6821500B2 (en) 1995-03-14 2004-11-23 Bechtel Bwxt Idaho, Llc Thermal synthesis apparatus and process
US5749937A (en) 1995-03-14 1998-05-12 Lockheed Idaho Technologies Company Fast quench reactor and method
US5626786A (en) * 1995-04-17 1997-05-06 Huntington; John H. Labile bromine fire suppressants
US5691258A (en) * 1996-06-24 1997-11-25 The United States Of America As Represented By The Secretary Of The Navy Two phase HfB2 -SiB4 material
JP2001504753A (ja) * 1996-11-04 2001-04-10 マテリアルズ モディフィケーション，インコーポレイティド 超微粉のマイクロ波プラズマ化学合成
US5935705A (en) * 1997-10-15 1999-08-10 National Science Council Of Republic Of China Crystalline Six Cy Nz with a direct optical band gap of 3.8 eV
US6107152A (en) * 1998-02-20 2000-08-22 Micron Technology, Inc. Method of forming tungsten nitride comprising layers using NF3 as a nitrogen source gas
BR9901512A (pt) * 1999-05-27 2001-01-09 Lupatech S A Processo de extração por plasma de ligantes
WO2001046067A1 (en) * 1999-12-21 2001-06-28 Bechtel Bwxt Idaho, Llc Hydrogen and elemental carbon production from natural gas and other hydrocarbons
JP4095272B2 (ja) * 2001-09-25 2008-06-04 株式会社東芝 微粒子製造方法および微粒子製造装置
US6627556B1 (en) * 2002-04-24 2003-09-30 Lsi Logic Corporation Method of chemically altering a silicon surface and associated electrical devices
US7264849B2 (en) * 2003-07-11 2007-09-04 Optisolar, Inc. Roll-vortex plasma chemical vapor deposition method
US20070048456A1 (en) * 2004-09-14 2007-03-01 Keshner Marvin S Plasma enhanced chemical vapor deposition apparatus and method
US7354561B2 (en) * 2004-11-17 2008-04-08 Battelle Energy Alliance, Llc Chemical reactor and method for chemically converting a first material into a second material
KR101514177B1 (ko) 2005-01-12 2015-04-22 이클립스 에어로스페이스, 인크. 화재 진압 시스템
US20080139003A1 (en) * 2006-10-26 2008-06-12 Shahid Pirzada Barrier coating deposition for thin film devices using plasma enhanced chemical vapor deposition process
US9630162B1 (en) * 2007-10-09 2017-04-25 University Of Louisville Research Foundation, Inc. Reactor and method for production of nanostructures
US8591821B2 (en) * 2009-04-23 2013-11-26 Battelle Energy Alliance, Llc Combustion flame-plasma hybrid reactor systems, and chemical reactant sources
CN104411634B (zh) * 2012-06-28 2016-10-26 日清工程株式会社 碳化钛微粒子的制造方法
US9574453B2 (en) 2014-01-02 2017-02-21 General Electric Company Steam turbine and methods of assembling the same
CA3013154C (en) * 2015-07-17 2019-10-15 Ap&C Advanced Powders And Coatings Inc. Plasma atomization metal powder manufacturing processes and systems therefor
EP4159345A1 (en) 2016-04-11 2023-04-05 AP&C Advanced Powders And Coatings Inc. Reactive metal powders in-flight heat treatment processes
RU2638471C2 (ru) * 2016-04-18 2017-12-13 Федеральное государственное бюджетное учреждение науки Институт металлургии и материаловедения им. А.А. Байкова Российской академии наук (ИМЕТ РАН) Способ получения порошка карбонитрида титана
WO2023200609A1 (en) * 2022-04-14 2023-10-19 The Texas A&M University System Conductive liquid hydrocarbon gas plasma for material and chemical synthesis and transformation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
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US3253886A (en) * 1961-05-09 1966-05-31 Union Carbide Corp Process for producing ultrafine powders of refractory materials
DE1250796B (de) * 1963-08-13 1967-09-28 Ciba Aktiengesellschaft, Basel (Schweiz) Verfahren zur Herstellung von feinteiligen, nicht pyrophoren Carbiden von Metallen oder Metalloiden der III., IV., V. oder VI. Gruppe des Periodischen Systems
CH525705A (de) * 1968-12-24 1972-07-31 Lonza Ag Verwendung von vortex-stabilisierten Plasmabrennern zur Durchführung von chemischen Reaktionen
SE347765B (sv) * 1970-05-27 1972-08-14 Nordstjernan Rederi Ab
SE372553B (sv) * 1972-10-13 1974-12-23 Aga Ab

Also Published As

Publication number Publication date
NL7611081A (nl) 1977-05-16
NO144628C (no) 1981-10-07
NL167293B (nl) 1981-06-16
DE2650869B1 (de) 1978-11-09
DE2650869C3 (de) 1979-08-16
CA1065576A (en) 1979-11-06
FR2331409A1 (fr) 1977-06-10
DE2650869A1 (de) 1977-05-26
SE7611043L (sv) 1977-05-13
US4022872A (en) 1977-05-10
NO763230L (sv) 1977-05-13
NO144628B (no) 1981-06-29
GB1560740A (en) 1980-02-06
BE848199A (fr) 1977-05-10
AU1732876A (en) 1978-03-09
JPS5612249B2 (sv) 1981-03-19
IT1070203B (it) 1985-03-29
NL167293C (nl) 1981-11-16
JPS5261194A (en) 1977-05-20
FR2331409B1 (sv) 1978-12-22
SE419333B (sv) 1981-07-27

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