JPS5261194A - Manufacturing process for aciddproof fine powder - Google Patents

Manufacturing process for aciddproof fine powder

Info

Publication number
JPS5261194A
JPS5261194A JP51135132A JP13513276A JPS5261194A JP S5261194 A JPS5261194 A JP S5261194A JP 51135132 A JP51135132 A JP 51135132A JP 13513276 A JP13513276 A JP 13513276A JP S5261194 A JPS5261194 A JP S5261194A
Authority
JP
Japan
Prior art keywords
aciddproof
manufacturing process
fine powder
fine
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51135132A
Other languages
English (en)
Other versions
JPS5612249B2 (ja
Inventor
Rei Kaason Donarudo
Buruusutaa Horuden Karubuin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PPG Industries Inc
Original Assignee
PPG Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PPG Industries Inc filed Critical PPG Industries Inc
Publication of JPS5261194A publication Critical patent/JPS5261194A/ja
Publication of JPS5612249B2 publication Critical patent/JPS5612249B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/002Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor carried out in the plasma state
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/02Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor for obtaining at least one reaction product which, at normal temperature, is in the solid state
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/06Metal silicides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00Boron; Compounds thereof
    • C01B35/02Boron; Borides
    • C01B35/04Metal borides
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/01Handling plasma, e.g. of subatomic particles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/26Plasma torches
    • H05H1/32Plasma torches using an arc
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/26Plasma torches
    • H05H1/32Plasma torches using an arc
    • H05H1/34Details, e.g. electrodes, nozzles
    • H05H1/3405Arrangements for stabilising or constricting the arc, e.g. by an additional gas flow
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/26Plasma torches
    • H05H1/32Plasma torches using an arc
    • H05H1/42Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder, liquid
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/12Surface area
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/26Plasma torches
    • H05H1/32Plasma torches using an arc
    • H05H1/34Details, e.g. electrodes, nozzles
    • H05H1/3468Vortex generators
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/26Plasma torches
    • H05H1/32Plasma torches using an arc
    • H05H1/34Details, e.g. electrodes, nozzles
    • H05H1/40Details, e.g. electrodes, nozzles using applied magnetic fields, e.g. for focusing or rotating the arc
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S422/00Chemical apparatus and process disinfecting, deodorizing, preserving, or sterilizing
    • Y10S422/906Plasma or ion generation means
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S423/00Chemistry of inorganic compounds
    • Y10S423/09Reaction techniques
    • Y10S423/10Plasma energized

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
JP51135132A 1975-11-12 1976-11-10 Manufacturing process for aciddproof fine powder Granted JPS5261194A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/631,241 US4022872A (en) 1975-11-12 1975-11-12 Process for preparing finely-divided refractory powders

Publications (2)

Publication Number Publication Date
JPS5261194A true JPS5261194A (en) 1977-05-20
JPS5612249B2 JPS5612249B2 (ja) 1981-03-19

Family

ID=24530359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51135132A Granted JPS5261194A (en) 1975-11-12 1976-11-10 Manufacturing process for aciddproof fine powder

Country Status (12)

Country Link
US (1) US4022872A (ja)
JP (1) JPS5261194A (ja)
BE (1) BE848199A (ja)
CA (1) CA1065576A (ja)
CH (1) CH616347A5 (ja)
DE (1) DE2650869C3 (ja)
FR (1) FR2331409A1 (ja)
GB (1) GB1560740A (ja)
IT (1) IT1070203B (ja)
NL (1) NL167293C (ja)
NO (1) NO144628C (ja)
SE (1) SE419333B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014002695A1 (ja) * 2012-06-28 2014-01-03 日清エンジニアリング株式会社 炭化チタン微粒子の製造方法

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US4353885A (en) * 1979-02-12 1982-10-12 Ppg Industries, Inc. Titanium diboride article and method for preparing same
US4235857A (en) * 1979-07-02 1980-11-25 Ford Motor Company Method of nitriding silicon
US4515763A (en) * 1981-07-15 1985-05-07 Board Of Trustees Of Leland Stanford Jr. Univeristy High specific surface area carbides and nitrides
AT382595B (de) * 1982-12-22 1987-03-10 Sueddeutsche Kalkstickstoff Anlage zur erzeugung von calciumcarbid
US4559439A (en) * 1983-01-21 1985-12-17 Plasma Energy Corporation Field convertible plasma generator and its method of operation
US4558017A (en) * 1984-05-14 1985-12-10 Allied Corporation Light induced production of ultrafine powders comprising metal silicide powder and silicon
US4689129A (en) * 1985-07-16 1987-08-25 The Dow Chemical Company Process for the preparation of submicron-sized titanium diboride
US4687560A (en) * 1985-08-16 1987-08-18 The United States Of America As Represented By The United States Department Of Energy Method of synthesizing a plurality of reactants and producing thin films of electro-optically active transition metal oxides
US4895765A (en) * 1985-09-30 1990-01-23 Union Carbide Corporation Titanium nitride and zirconium nitride coating compositions, coated articles and methods of manufacture
US4654076A (en) * 1986-01-30 1987-03-31 Plasma Energy Corporation Apparatus and method for treating metallic fines
JPS62168896U (ja) * 1986-04-16 1987-10-26
US4851262A (en) * 1987-05-27 1989-07-25 Carnegie-Mellon University Method of making carbide, nitride and boride powders
JPH0643248B2 (ja) * 1987-09-18 1994-06-08 科学技術庁金属材料技術研究所長 遷移金属ほう化物繊維の製造法
GB8809651D0 (en) * 1988-04-23 1988-05-25 Tioxide Group Plc Nitrogen compounds
DE3840316C1 (ja) * 1988-11-30 1990-04-19 Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe, De
GB8913106D0 (en) * 1989-06-07 1989-07-26 Tioxide Group Plc Production of nitrogen compounds
US5302366A (en) * 1991-03-28 1994-04-12 Phillips Petroleum Company Production of silicon product containing both carbon and nitrogen
GB9306802D0 (en) * 1993-04-01 1993-05-26 Tioxide Specialties Ltd Process for the production of silicon nitride
JPH08170174A (ja) * 1994-12-14 1996-07-02 Nec Corp TiN膜の形成方法
US7576296B2 (en) * 1995-03-14 2009-08-18 Battelle Energy Alliance, Llc Thermal synthesis apparatus
US5749937A (en) 1995-03-14 1998-05-12 Lockheed Idaho Technologies Company Fast quench reactor and method
US6821500B2 (en) 1995-03-14 2004-11-23 Bechtel Bwxt Idaho, Llc Thermal synthesis apparatus and process
US5626786A (en) 1995-04-17 1997-05-06 Huntington; John H. Labile bromine fire suppressants
US5691258A (en) * 1996-06-24 1997-11-25 The United States Of America As Represented By The Secretary Of The Navy Two phase HfB2 -SiB4 material
WO1998019965A1 (en) * 1996-11-04 1998-05-14 Materials Modification, Inc. Microwave plasma chemical synthesis of ultrafine powders
US5935705A (en) * 1997-10-15 1999-08-10 National Science Council Of Republic Of China Crystalline Six Cy Nz with a direct optical band gap of 3.8 eV
US6107152A (en) * 1998-02-20 2000-08-22 Micron Technology, Inc. Method of forming tungsten nitride comprising layers using NF3 as a nitrogen source gas
BR9901512A (pt) * 1999-05-27 2001-01-09 Lupatech S A Processo de extração por plasma de ligantes
US6395197B1 (en) * 1999-12-21 2002-05-28 Bechtel Bwxt Idaho Llc Hydrogen and elemental carbon production from natural gas and other hydrocarbons
JP4095272B2 (ja) * 2001-09-25 2008-06-04 株式会社東芝 微粒子製造方法および微粒子製造装置
US6627556B1 (en) * 2002-04-24 2003-09-30 Lsi Logic Corporation Method of chemically altering a silicon surface and associated electrical devices
US7264849B2 (en) * 2003-07-11 2007-09-04 Optisolar, Inc. Roll-vortex plasma chemical vapor deposition method
US20070048456A1 (en) * 2004-09-14 2007-03-01 Keshner Marvin S Plasma enhanced chemical vapor deposition apparatus and method
US7354561B2 (en) * 2004-11-17 2008-04-08 Battelle Energy Alliance, Llc Chemical reactor and method for chemically converting a first material into a second material
EP1861174A4 (en) 2005-01-12 2010-12-22 Eclipse Aerospace Inc FIRE EXTINGUISHING SYSTEMS
US20080139003A1 (en) * 2006-10-26 2008-06-12 Shahid Pirzada Barrier coating deposition for thin film devices using plasma enhanced chemical vapor deposition process
US9630162B1 (en) * 2007-10-09 2017-04-25 University Of Louisville Research Foundation, Inc. Reactor and method for production of nanostructures
US8591821B2 (en) * 2009-04-23 2013-11-26 Battelle Energy Alliance, Llc Combustion flame-plasma hybrid reactor systems, and chemical reactant sources
US9574453B2 (en) 2014-01-02 2017-02-21 General Electric Company Steam turbine and methods of assembling the same
CA2992303C (en) * 2015-07-17 2018-08-21 Ap&C Advanced Powders And Coatings Inc. Plasma atomization metal powder manufacturing processes and systems therefor
WO2017177315A1 (en) 2016-04-11 2017-10-19 Ap&C Advanced Powders & Coatings Inc. Reactive metal powders in-flight heat treatment processes
RU2638471C2 (ru) * 2016-04-18 2017-12-13 Федеральное государственное бюджетное учреждение науки Институт металлургии и материаловедения им. А.А. Байкова Российской академии наук (ИМЕТ РАН) Способ получения порошка карбонитрида титана
WO2023200609A1 (en) * 2022-04-14 2023-10-19 The Texas A&M University System Conductive liquid hydrocarbon gas plasma for material and chemical synthesis and transformation

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US3253886A (en) * 1961-05-09 1966-05-31 Union Carbide Corp Process for producing ultrafine powders of refractory materials
DE1250796B (de) * 1963-08-13 1967-09-28 Ciba Aktiengesellschaft, Basel (Schweiz) Verfahren zur Herstellung von feinteiligen, nicht pyrophoren Carbiden von Metallen oder Metalloiden der III., IV., V. oder VI. Gruppe des Periodischen Systems
CH525705A (de) * 1968-12-24 1972-07-31 Lonza Ag Verwendung von vortex-stabilisierten Plasmabrennern zur Durchführung von chemischen Reaktionen
SE347765B (ja) * 1970-05-27 1972-08-14 Nordstjernan Rederi Ab
SE372553B (ja) * 1972-10-13 1974-12-23 Aga Ab

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014002695A1 (ja) * 2012-06-28 2014-01-03 日清エンジニアリング株式会社 炭化チタン微粒子の製造方法
JPWO2014002695A1 (ja) * 2012-06-28 2016-05-30 日清エンジニアリング株式会社 炭化チタン微粒子の製造方法
US9751769B2 (en) 2012-06-28 2017-09-05 Nisshin Engineering Inc. Method for production of titanium carbide nanoparticles

Also Published As

Publication number Publication date
JPS5612249B2 (ja) 1981-03-19
DE2650869C3 (de) 1979-08-16
CH616347A5 (ja) 1980-03-31
SE419333B (sv) 1981-07-27
US4022872A (en) 1977-05-10
GB1560740A (en) 1980-02-06
NL167293C (nl) 1981-11-16
CA1065576A (en) 1979-11-06
IT1070203B (it) 1985-03-29
NO144628B (no) 1981-06-29
BE848199A (fr) 1977-05-10
FR2331409B1 (ja) 1978-12-22
NO763230L (ja) 1977-05-13
SE7611043L (sv) 1977-05-13
FR2331409A1 (fr) 1977-06-10
NL7611081A (nl) 1977-05-16
NL167293B (nl) 1981-06-16
AU1732876A (en) 1978-03-09
NO144628C (no) 1981-10-07
DE2650869B1 (de) 1978-11-09
DE2650869A1 (de) 1977-05-26

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