CH612596A5 - Process for continuous manufacture of preformed single crystals and device for its use - Google Patents
Process for continuous manufacture of preformed single crystals and device for its useInfo
- Publication number
- CH612596A5 CH612596A5 CH1013876A CH1013876A CH612596A5 CH 612596 A5 CH612596 A5 CH 612596A5 CH 1013876 A CH1013876 A CH 1013876A CH 1013876 A CH1013876 A CH 1013876A CH 612596 A5 CH612596 A5 CH 612596A5
- Authority
- CH
- Switzerland
- Prior art keywords
- crucible
- single crystals
- capillary orifice
- seed
- substance
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000126 substance Substances 0.000 abstract 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 abstract 2
- 230000003750 conditioning effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 239000010979 ruby Substances 0.000 abstract 1
- 229910001750 ruby Inorganic materials 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011780 sodium chloride Substances 0.000 abstract 1
- 229910052727 yttrium Inorganic materials 0.000 abstract 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7524770A FR2321326A1 (fr) | 1975-08-08 | 1975-08-08 | Procede de fabrication en continu de monocristaux preformes |
| FR7622863A FR2359639A2 (fr) | 1976-07-27 | 1976-07-27 | Dispositif pour fabriquer des tubes et des ensembles de petits cylindres monocristallins |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH612596A5 true CH612596A5 (en) | 1979-08-15 |
Family
ID=26219025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1013876A CH612596A5 (en) | 1975-08-08 | 1976-08-09 | Process for continuous manufacture of preformed single crystals and device for its use |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5242479A (enExample) |
| CH (1) | CH612596A5 (enExample) |
| DE (1) | DE2635373C2 (enExample) |
| GB (1) | GB1546843A (enExample) |
| IT (1) | IT1069679B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2528454A1 (fr) * | 1982-06-11 | 1983-12-16 | Criceram | Creuset modifie pour la methode de cristallisation par goutte pendante |
| DE4323793A1 (de) * | 1993-07-15 | 1995-01-19 | Wacker Chemitronic | Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung |
| ES2105808T3 (es) * | 1994-07-08 | 1997-10-16 | Heraeus Electro Nite Int | Dispositivo para la medicion de la tension superficial. |
| DE4423720C1 (de) * | 1994-07-08 | 1996-02-01 | Heraeus Electro Nite Int | Vorrichtung zur Messung der Oberflächenspannung |
| TW200510581A (en) * | 2003-07-17 | 2005-03-16 | Stella Chemifa Corp | Method for producing crystal of fluoride |
| US7691199B2 (en) | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| JP5195301B2 (ja) * | 2008-10-31 | 2013-05-08 | Ｔｄｋ株式会社 | 単結晶引下げ装置 |
| JP2021172575A (ja) * | 2020-04-30 | 2021-11-01 | Tdk株式会社 | 坩堝および結晶製造装置 |
| JP2021172796A (ja) * | 2020-04-30 | 2021-11-01 | Tdk株式会社 | 単結晶蛍光体および結晶体の製造方法 |
| CN119927187B (zh) * | 2024-12-26 | 2025-09-26 | 北京航空航天大学杭州创新研究院 | 一种热电材料线材的批量制备装置和方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1044768B (de) * | 1954-03-02 | 1958-11-27 | Siemens Ag | Verfahren und Vorrichtung zum Ziehen eines stabfoermigen kristallinen Koerpers, vorzugsweise Halbleiterkoerpers |
| DE1204837B (de) * | 1961-08-21 | 1965-11-11 | Merck & Co Inc | Verfahren zur kontinuierlichen Herstellung von Staeben aus thermoelektrischen Werkstoffen |
| US3249404A (en) * | 1963-02-20 | 1966-05-03 | Merck & Co Inc | Continuous growth of crystalline materials |
| US3765843A (en) * | 1971-07-01 | 1973-10-16 | Tyco Laboratories Inc | Growth of tubular crystalline bodies |
| US3801309A (en) * | 1971-11-08 | 1974-04-02 | Tyco Laboratories Inc | Production of eutectic bodies by unidirectional solidification |
| JPS5113568A (en) * | 1974-07-24 | 1976-02-03 | Hitachi Ltd | Handotaiketsushono seizohohooyobi seizosochi |
-
1976
- 1976-08-06 DE DE19762635373 patent/DE2635373C2/de not_active Expired
- 1976-08-09 GB GB3310076A patent/GB1546843A/en not_active Expired
- 1976-08-09 CH CH1013876A patent/CH612596A5/xx not_active IP Right Cessation
- 1976-08-09 IT IT6898476A patent/IT1069679B/it active
- 1976-08-09 JP JP9407376A patent/JPS5242479A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2635373A1 (de) | 1977-04-21 |
| IT1069679B (it) | 1985-03-25 |
| JPS546510B2 (enExample) | 1979-03-29 |
| GB1546843A (en) | 1979-05-31 |
| DE2635373C2 (de) | 1982-04-15 |
| JPS5242479A (en) | 1977-04-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS52143755A (en) | Laser, zone melting device | |
| CH612596A5 (en) | Process for continuous manufacture of preformed single crystals and device for its use | |
| MY103936A (en) | Manufacturing method and equipment of single silicon crystal | |
| IT7949049A0 (it) | Dispositivo e procedimento per tirare dalla massa fusa aste di semiconduttori molto puri | |
| FR2547571B1 (fr) | Procede et appareil pour produire du silicium de haute purete | |
| MY104640A (en) | Apparatus for manufacturing silicon single crystals. | |
| BE864356A (fr) | Procede et dispositif pour la fabrication de produits en matiere thermolastique reticulee | |
| FR2321326A1 (fr) | Procede de fabrication en continu de monocristaux preformes | |
| SE8502375D0 (sv) | Forfarande och anordning for dragning av stavar av monokristallisk kisel | |
| BE880839A (fr) | Dispositif et procede pour faire croitre des cristaux de silicium sous vide, a partir de matiere fondue | |
| JPS6428809A (en) | Laser annealing device | |
| JPS5326705A (en) | Apparatus for zone melting of semiconductor rod without crucible | |
| FI872888L (fi) | Anordning foer framstaellning av enkristall foer halvledare. | |
| FR2649474B1 (fr) | Procede permettant de reduire une contamination des bains de fusion a haute temperature et dispositif obtenu | |
| FR2377224A2 (fr) | Procede et dispositif de fabrication de monocristaux preformes a dopage multiple | |
| JPS5265782A (en) | Equipment for producing belt=shaped crystal | |
| JPS5252570A (en) | Device for production of compound semiconductor | |
| JPS54141389A (en) | Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible | |
| JPS57118092A (en) | Manufacturing apparatus for beltlike silicon crystal | |
| JPS5288590A (en) | Apparatus for manufacturing single crystal | |
| JPS51136582A (en) | Process for production of a semi -conductor crystal | |
| JPS52120290A (en) | Production of gap single crystal | |
| JPS5265781A (en) | Equipment for producing belt-shaped crystal | |
| JPS6441212A (en) | Semiconductor crystal growth method | |
| JPS5371689A (en) | Manufacturing apparatus for band type silicon crystal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased | ||
| PL | Patent ceased |