DE2735525A1
(de)
*
|
1977-08-06 |
1979-02-22 |
Leybold Heraeus Gmbh & Co Kg |
Katodenanordnung mit target fuer zerstaeubungsanlagen zum aufstaeuben dielektrischer oder amagnetischer schichten auf substrate
|
JPS5723606Y2
(zh)
*
|
1978-04-28 |
1982-05-22 |
|
|
GB2051877B
(en)
*
|
1979-04-09 |
1983-03-02 |
Vac Tec Syst |
Magnetically enhanced sputtering device and method
|
FR2507126A2
(fr)
*
|
1980-06-06 |
1982-12-10 |
Stephanois Rech Mec |
Procede pour la fabrication d'une couche composite resistant a la fois au grippage, a l'abrasion, a la corrosion et a la fatigue par contraintes alternees, et couche composite ainsi obtenue
|
JPS5778519A
(en)
*
|
1980-11-05 |
1982-05-17 |
Citizen Watch Co Ltd |
Production of electrochromic display element
|
DE3107914A1
(de)
*
|
1981-03-02 |
1982-09-16 |
Leybold-Heraeus GmbH, 5000 Köln |
Verfahren und vorrichtung zum beschichten von formteilen durch katodenzerstaeubung
|
FR2501727A1
(fr)
*
|
1981-03-13 |
1982-09-17 |
Vide Traitement |
Procede de traitements thermochimiques de metaux par bombardement ionique
|
US4525262A
(en)
*
|
1982-01-26 |
1985-06-25 |
Materials Research Corporation |
Magnetron reactive bias sputtering method and apparatus
|
DE3371439D1
(en)
*
|
1982-01-26 |
1987-06-11 |
Materials Research Corp |
Magnetron reactive bias sputtering method and apparatus
|
EP0090067B2
(de)
|
1982-03-31 |
1991-03-20 |
Ibm Deutschland Gmbh |
Reaktor für das reaktive Ionenätzen und Ätzverfahren
|
FR2528452B1
(fr)
*
|
1982-06-11 |
1985-12-20 |
Vide Traitement |
Procede et dispositif pour la realisation de depots metalliques ou de composes metalliques, a la surface d'une piece en un materiau electriquement conducteur
|
WO1984004110A1
(en)
*
|
1983-04-18 |
1984-10-25 |
Battelle Development Corp |
HARD LAYER FORMED BY INCORPORATING NITROGEN INTO Mo OU W METAL AND METHOD FOR OBTAINING THIS LAYER
|
US4420386A
(en)
*
|
1983-04-22 |
1983-12-13 |
White Engineering Corporation |
Method for pure ion plating using magnetic fields
|
US4468309A
(en)
*
|
1983-04-22 |
1984-08-28 |
White Engineering Corporation |
Method for resisting galling
|
US4520268A
(en)
*
|
1983-05-26 |
1985-05-28 |
Pauline Y. Lau |
Method and apparatus for introducing normally solid materials into substrate surfaces
|
US4512864A
(en)
*
|
1983-11-30 |
1985-04-23 |
Ppg Industries, Inc. |
Low resistance indium oxide films
|
US4865712A
(en)
*
|
1984-05-17 |
1989-09-12 |
Varian Associates, Inc. |
Apparatus for manufacturing planarized aluminum films
|
US4933058A
(en)
*
|
1986-01-23 |
1990-06-12 |
The Gillette Company |
Formation of hard coatings on cutting edges
|
US4774437A
(en)
*
|
1986-02-28 |
1988-09-27 |
Varian Associates, Inc. |
Inverted re-entrant magnetron ion source
|
US4826365A
(en)
*
|
1988-01-20 |
1989-05-02 |
White Engineering Corporation |
Material-working tools and method for lubricating
|
US5234560A
(en)
*
|
1989-08-14 |
1993-08-10 |
Hauzer Holdings Bv |
Method and device for sputtering of films
|
DE3941797A1
(de)
*
|
1989-12-19 |
1991-06-20 |
Leybold Ag |
Belag, bestehend aus einem optisch wirkenden schichtsystem, fuer substrate, wobei das schichtsystem insbesondere eine hohe antireflexwirkung aufweist, und verfahren zur herstellung des belags
|
DE3941795A1
(de)
*
|
1989-12-19 |
1991-06-20 |
Leybold Ag |
Optisch wirkende schicht fuer substrate, die insbesondere eine hohe antireflexwirkung aufweist, und verfahren zur herstellung der schicht
|
CA2061119C
(en)
*
|
1991-04-19 |
1998-02-03 |
Pei-Ing P. Lee |
Method of depositing conductors in high aspect ratio apertures
|
US5458759A
(en)
*
|
1991-08-02 |
1995-10-17 |
Anelva Corporation |
Magnetron sputtering cathode apparatus
|
KR950000906B1
(ko)
*
|
1991-08-02 |
1995-02-03 |
니찌덴 아넬바 가부시기가이샤 |
스퍼터링장치
|
US5300813A
(en)
|
1992-02-26 |
1994-04-05 |
International Business Machines Corporation |
Refractory metal capped low resistivity metal conductor lines and vias
|
US5411600A
(en)
*
|
1992-06-03 |
1995-05-02 |
Eastman Kodak Company |
Ultrathin film thermocouples and method of manufacture
|
GB2282824A
(en)
*
|
1993-10-14 |
1995-04-19 |
Secr Defence |
Reinforcement particles pre-coated with metal matrix; particle-reinforced metal matrix composites
|
DE4434428A1
(de)
*
|
1994-09-27 |
1996-03-28 |
Widia Gmbh |
Verbundkörper, Verwendung dieses Verbundkörpers und Verfahren zu seiner Herstellung
|
US5859404A
(en)
*
|
1995-10-12 |
1999-01-12 |
Hughes Electronics Corporation |
Method and apparatus for plasma processing a workpiece in an enveloping plasma
|
GB2306510B
(en)
*
|
1995-11-02 |
1999-06-23 |
Univ Surrey |
Modification of metal surfaces
|
DE19609804C1
(de)
*
|
1996-03-13 |
1997-07-31 |
Bosch Gmbh Robert |
Einrichtung, ihre Verwendung und ihr Betrieb zum Vakuumbeschichten von Schüttgut
|
JP2002527628A
(ja)
*
|
1998-10-21 |
2002-08-27 |
シーメンス アクチエンゲゼルシヤフト |
製品の浄化方法と被覆方法およびそのための装置
|
CH697036A5
(de)
†
|
1998-12-02 |
2008-03-31 |
Sulzer Metco Ag |
Verfahren zur Plasma-Oberflächenbehandlung von Substraten sowie Einrichtung zur Durchführung des Verfahrens.
|
US6352626B1
(en)
|
1999-04-19 |
2002-03-05 |
Von Zweck Heimart |
Sputter ion source for boron and other targets
|
US7294563B2
(en)
|
2000-08-10 |
2007-11-13 |
Applied Materials, Inc. |
Semiconductor on insulator vertical transistor fabrication and doping process
|
US6939434B2
(en)
*
|
2000-08-11 |
2005-09-06 |
Applied Materials, Inc. |
Externally excited torroidal plasma source with magnetic control of ion distribution
|
US7166524B2
(en)
|
2000-08-11 |
2007-01-23 |
Applied Materials, Inc. |
Method for ion implanting insulator material to reduce dielectric constant
|
US7223676B2
(en)
|
2002-06-05 |
2007-05-29 |
Applied Materials, Inc. |
Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
|
US6893907B2
(en)
|
2002-06-05 |
2005-05-17 |
Applied Materials, Inc. |
Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
|
US7303982B2
(en)
|
2000-08-11 |
2007-12-04 |
Applied Materials, Inc. |
Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
|
US7137354B2
(en)
|
2000-08-11 |
2006-11-21 |
Applied Materials, Inc. |
Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
|
US7479456B2
(en)
|
2004-08-26 |
2009-01-20 |
Applied Materials, Inc. |
Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
|
US7320734B2
(en)
|
2000-08-11 |
2008-01-22 |
Applied Materials, Inc. |
Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
|
US7430984B2
(en)
*
|
2000-08-11 |
2008-10-07 |
Applied Materials, Inc. |
Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
|
US7465478B2
(en)
|
2000-08-11 |
2008-12-16 |
Applied Materials, Inc. |
Plasma immersion ion implantation process
|
US7037813B2
(en)
|
2000-08-11 |
2006-05-02 |
Applied Materials, Inc. |
Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
|
US7288491B2
(en)
|
2000-08-11 |
2007-10-30 |
Applied Materials, Inc. |
Plasma immersion ion implantation process
|
US7094670B2
(en)
|
2000-08-11 |
2006-08-22 |
Applied Materials, Inc. |
Plasma immersion ion implantation process
|
US7183177B2
(en)
|
2000-08-11 |
2007-02-27 |
Applied Materials, Inc. |
Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
|
JP4570233B2
(ja)
*
|
2000-10-25 |
2010-10-27 |
株式会社アルバック |
薄膜形成方法及びその形成装置
|
US6761804B2
(en)
|
2002-02-11 |
2004-07-13 |
Applied Materials, Inc. |
Inverted magnetron
|
SE526857C2
(sv)
*
|
2003-12-22 |
2005-11-08 |
Seco Tools Ab |
Sätt att belägga ett skärverktyg med användning av reaktiv magnetronsputtering
|
US7244474B2
(en)
|
2004-03-26 |
2007-07-17 |
Applied Materials, Inc. |
Chemical vapor deposition plasma process using an ion shower grid
|
US7291360B2
(en)
|
2004-03-26 |
2007-11-06 |
Applied Materials, Inc. |
Chemical vapor deposition plasma process using plural ion shower grids
|
US7695590B2
(en)
|
2004-03-26 |
2010-04-13 |
Applied Materials, Inc. |
Chemical vapor deposition plasma reactor having plural ion shower grids
|
US7767561B2
(en)
|
2004-07-20 |
2010-08-03 |
Applied Materials, Inc. |
Plasma immersion ion implantation reactor having an ion shower grid
|
US8058156B2
(en)
|
2004-07-20 |
2011-11-15 |
Applied Materials, Inc. |
Plasma immersion ion implantation reactor having multiple ion shower grids
|
US7666464B2
(en)
|
2004-10-23 |
2010-02-23 |
Applied Materials, Inc. |
RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
|
US7428915B2
(en)
*
|
2005-04-26 |
2008-09-30 |
Applied Materials, Inc. |
O-ringless tandem throttle valve for a plasma reactor chamber
|
US7312162B2
(en)
|
2005-05-17 |
2007-12-25 |
Applied Materials, Inc. |
Low temperature plasma deposition process for carbon layer deposition
|
US7422775B2
(en)
|
2005-05-17 |
2008-09-09 |
Applied Materials, Inc. |
Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
|
US7109098B1
(en)
|
2005-05-17 |
2006-09-19 |
Applied Materials, Inc. |
Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
|
US7312148B2
(en)
|
2005-08-08 |
2007-12-25 |
Applied Materials, Inc. |
Copper barrier reflow process employing high speed optical annealing
|
US7323401B2
(en)
|
2005-08-08 |
2008-01-29 |
Applied Materials, Inc. |
Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
|
US7335611B2
(en)
|
2005-08-08 |
2008-02-26 |
Applied Materials, Inc. |
Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
|
US7429532B2
(en)
|
2005-08-08 |
2008-09-30 |
Applied Materials, Inc. |
Semiconductor substrate process using an optically writable carbon-containing mask
|
US20070051388A1
(en)
*
|
2005-09-06 |
2007-03-08 |
Applied Materials, Inc. |
Apparatus and methods for using high frequency chokes in a substrate deposition apparatus
|
CN100483643C
(zh)
*
|
2006-07-13 |
2009-04-29 |
中芯国际集成电路制造(上海)有限公司 |
一种制作低介电常数层的新方法及其应用
|
CN101583736A
(zh)
*
|
2007-01-19 |
2009-11-18 |
应用材料股份有限公司 |
浸没式等离子体室
|
US20090197015A1
(en)
*
|
2007-12-25 |
2009-08-06 |
Applied Materials, Inc. |
Method and apparatus for controlling plasma uniformity
|
CN101851746A
(zh)
*
|
2009-04-03 |
2010-10-06 |
鸿富锦精密工业(深圳)有限公司 |
磁控式溅镀靶及磁控式溅镀系统
|
KR101975741B1
(ko)
*
|
2009-11-13 |
2019-05-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
타깃 재료의 포장 방법 및 타깃의 장착 방법
|
EP2591491A1
(en)
*
|
2010-07-09 |
2013-05-15 |
OC Oerlikon Balzers AG |
Magnetron sputtering apparatus
|
CN106816351B
(zh)
*
|
2017-01-20 |
2018-08-17 |
信利(惠州)智能显示有限公司 |
一种离子注入装置
|