CH535495A - Feldeffektspeichertransistor mit isolierter Gate-Elektrode - Google Patents

Feldeffektspeichertransistor mit isolierter Gate-Elektrode

Info

Publication number
CH535495A
CH535495A CH1760571A CH1760571A CH535495A CH 535495 A CH535495 A CH 535495A CH 1760571 A CH1760571 A CH 1760571A CH 1760571 A CH1760571 A CH 1760571A CH 535495 A CH535495 A CH 535495A
Authority
CH
Switzerland
Prior art keywords
gate electrode
field effect
insulated gate
memory transistor
effect memory
Prior art date
Application number
CH1760571A
Other languages
German (de)
English (en)
Inventor
Theodore Charles
Corbin George
Original Assignee
Ncr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22247621&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CH535495(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Ncr Co filed Critical Ncr Co
Publication of CH535495A publication Critical patent/CH535495A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
CH1760571A 1970-12-03 1971-12-03 Feldeffektspeichertransistor mit isolierter Gate-Elektrode CH535495A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9486170A 1970-12-03 1970-12-03

Publications (1)

Publication Number Publication Date
CH535495A true CH535495A (de) 1973-03-31

Family

ID=22247621

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1760571A CH535495A (de) 1970-12-03 1971-12-03 Feldeffektspeichertransistor mit isolierter Gate-Elektrode

Country Status (18)

Country Link
US (1) US3719866A (en:Method)
JP (1) JPS5116265B1 (en:Method)
AT (1) AT336681B (en:Method)
AU (1) AU450552B2 (en:Method)
BE (1) BE776013A (en:Method)
BR (1) BR7107965D0 (en:Method)
CA (1) CA950126A (en:Method)
CH (1) CH535495A (en:Method)
DE (1) DE2159192B2 (en:Method)
DK (1) DK132145C (en:Method)
ES (1) ES397549A1 (en:Method)
FR (1) FR2116410B1 (en:Method)
GB (1) GB1315230A (en:Method)
IT (1) IT941940B (en:Method)
NL (1) NL175772C (en:Method)
NO (1) NO131563C (en:Method)
SE (1) SE364598B (en:Method)
ZA (1) ZA717690B (en:Method)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5145438B1 (en:Method) * 1971-06-25 1976-12-03
JPS5329075B2 (en:Method) * 1972-02-12 1978-08-18
GB1363190A (en) * 1972-05-31 1974-08-14 Plessey Co Ltd Semiconductor memory device
US3845327A (en) * 1972-08-16 1974-10-29 Westinghouse Electric Corp Counter with memory utilizing mnos memory elements
US3877055A (en) * 1972-11-13 1975-04-08 Motorola Inc Semiconductor memory device
FR2228251B1 (en:Method) * 1973-05-04 1980-04-04 Commissariat Energie Atomique
US3911464A (en) * 1973-05-29 1975-10-07 Ibm Nonvolatile semiconductor memory
US3947863A (en) * 1973-06-29 1976-03-30 Motorola Inc. Charge coupled device with electrically settable shift direction
JPS5024084A (en:Method) * 1973-07-05 1975-03-14
DE2445079C3 (de) * 1974-09-20 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Speicher-Feldeffekttransistor
DE2638730C2 (de) * 1974-09-20 1982-10-28 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET, Verfahren zum Entladen des Speichergate des n-Kanal-Speicher-FET und Verwendung des n-Kanal-Speicher-FET
GB1540450A (en) * 1975-10-29 1979-02-14 Intel Corp Self-aligning double polycrystalline silicon etching process
US4057821A (en) * 1975-11-20 1977-11-08 Nitron Corporation/Mcdonnell-Douglas Corporation Non-volatile semiconductor memory device
US4115914A (en) * 1976-03-26 1978-09-26 Hughes Aircraft Company Electrically erasable non-volatile semiconductor memory
US4096509A (en) * 1976-07-22 1978-06-20 The United States Of America As Represented By The Secretary Of The Air Force MNOS memory transistor having a redeposited silicon nitride gate dielectric
US5434438A (en) * 1976-09-13 1995-07-18 Texas Instruments Inc. Random access memory cell with a capacitor
US5168075A (en) * 1976-09-13 1992-12-01 Texas Instruments Incorporated Random access memory cell with implanted capacitor region
US4098924A (en) * 1976-10-19 1978-07-04 Westinghouse Electric Corp. Gate fabrication method for mnos memory devices
DE2723738C2 (de) * 1977-05-26 1984-11-08 Deutsche Itt Industries Gmbh, 7800 Freiburg Halbleiterspeicherzelle für das nichtflüchtige Speichern elektrischer Ladung und Verfahren zu deren Programmierung
US4151538A (en) * 1978-01-30 1979-04-24 Rca Corp. Nonvolatile semiconductive memory device and method of its manufacture
US4307411A (en) * 1978-01-30 1981-12-22 Rca Corporation Nonvolatile semiconductor memory device and method of its manufacture
US4236167A (en) * 1978-02-06 1980-11-25 Rca Corporation Stepped oxide, high voltage MOS transistor with near intrinsic channel regions of different doping levels
US4198252A (en) * 1978-04-06 1980-04-15 Rca Corporation MNOS memory device
US4268328A (en) * 1978-04-21 1981-05-19 Mcdonnell Douglas Corporation Stripped nitride MOS/MNOS process
US4611308A (en) * 1978-06-29 1986-09-09 Westinghouse Electric Corp. Drain triggered N-channel non-volatile memory
US4232327A (en) * 1978-11-13 1980-11-04 Rca Corporation Extended drain self-aligned silicon gate MOSFET
US4318216A (en) * 1978-11-13 1982-03-09 Rca Corporation Extended drain self-aligned silicon gate MOSFET
US4353083A (en) * 1978-11-27 1982-10-05 Ncr Corporation Low voltage nonvolatile memory device
US4250206A (en) * 1978-12-11 1981-02-10 Texas Instruments Incorporated Method of making non-volatile semiconductor memory elements
JPS55500965A (en:Method) * 1978-11-27 1980-11-13
WO1981000487A1 (en) * 1979-08-13 1981-02-19 Ncr Co Hydrogen annealing process for silicon gate memory device
US4558344A (en) * 1982-01-29 1985-12-10 Seeq Technology, Inc. Electrically-programmable and electrically-erasable MOS memory device
US4455742A (en) * 1982-06-07 1984-06-26 Westinghouse Electric Corp. Method of making self-aligned memory MNOS-transistor
US5120672A (en) * 1989-02-22 1992-06-09 Texas Instruments Incorporated Fabricating a single level merged EEPROM cell having an ONO memory stack substantially spaced from the source region
US5057885A (en) * 1989-07-28 1991-10-15 Casio Computer Co., Ltd. Memory cell system with first and second gates
US5215934A (en) * 1989-12-21 1993-06-01 Tzeng Jyh Cherng J Process for reducing program disturbance in eeprom arrays
US5679968A (en) * 1990-01-31 1997-10-21 Texas Instruments Incorporated Transistor having reduced hot carrier implantation
US5844271A (en) * 1995-08-21 1998-12-01 Cypress Semiconductor Corp. Single layer polycrystalline silicon split-gate EEPROM cell having a buried control gate
US5741737A (en) 1996-06-27 1998-04-21 Cypress Semiconductor Corporation MOS transistor with ramped gate oxide thickness and method for making same
US5897354A (en) * 1996-12-17 1999-04-27 Cypress Semiconductor Corporation Method of forming a non-volatile memory device with ramped tunnel dielectric layer
US6121666A (en) * 1997-06-27 2000-09-19 Sun Microsystems, Inc. Split gate oxide asymmetric MOS devices
US6124171A (en) * 1998-09-24 2000-09-26 Intel Corporation Method of forming gate oxide having dual thickness by oxidation process
US6225669B1 (en) * 1998-09-30 2001-05-01 Advanced Micro Devices, Inc. Non-uniform gate/dielectric field effect transistor
US6740944B1 (en) * 2001-07-05 2004-05-25 Altera Corporation Dual-oxide transistors for the improvement of reliability and off-state leakage
US7755162B2 (en) 2004-05-06 2010-07-13 Sidense Corp. Anti-fuse memory cell
US8735297B2 (en) 2004-05-06 2014-05-27 Sidense Corporation Reverse optical proximity correction method
US9123572B2 (en) 2004-05-06 2015-09-01 Sidense Corporation Anti-fuse memory cell
JP4981661B2 (ja) * 2004-05-06 2012-07-25 サイデンス コーポレーション 分割チャネルアンチヒューズアレイ構造
US10276679B2 (en) * 2017-05-30 2019-04-30 Vanguard International Semiconductor Corporation Semiconductor device and method for manufacturing the same
TW202429716A (zh) * 2023-01-06 2024-07-16 聯華電子股份有限公司 延伸汲極型金氧半導體電晶體及其製作方法

Also Published As

Publication number Publication date
FR2116410B1 (en:Method) 1977-04-22
ZA717690B (en) 1972-08-30
GB1315230A (en) 1973-05-02
DE2159192B2 (de) 1978-04-20
NL175772C (nl) 1984-12-17
BR7107965D0 (pt) 1973-05-15
NL175772B (nl) 1984-07-16
JPS5116265B1 (en:Method) 1976-05-22
NO131563C (en:Method) 1975-06-18
US3719866A (en) 1973-03-06
BE776013A (fr) 1972-03-16
AU3591571A (en) 1973-05-24
DK132145C (da) 1976-03-22
AU450552B2 (en) 1974-07-11
CA950126A (en) 1974-06-25
FR2116410A1 (en:Method) 1972-07-13
ATA1036871A (de) 1976-09-15
DE2159192A1 (de) 1972-06-08
SE364598B (en:Method) 1974-02-25
AT336681B (de) 1977-05-25
NO131563B (en:Method) 1975-03-10
DK132145B (da) 1975-10-27
ES397549A1 (es) 1975-03-16
IT941940B (it) 1973-03-10
NL7116675A (en:Method) 1972-06-06

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