JPS5116265B1 - - Google Patents

Info

Publication number
JPS5116265B1
JPS5116265B1 JP46097287A JP9728771A JPS5116265B1 JP S5116265 B1 JPS5116265 B1 JP S5116265B1 JP 46097287 A JP46097287 A JP 46097287A JP 9728771 A JP9728771 A JP 9728771A JP S5116265 B1 JPS5116265 B1 JP S5116265B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46097287A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22247621&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS5116265(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed filed Critical
Publication of JPS5116265B1 publication Critical patent/JPS5116265B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
JP46097287A 1970-12-03 1971-12-03 Pending JPS5116265B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9486170A 1970-12-03 1970-12-03

Publications (1)

Publication Number Publication Date
JPS5116265B1 true JPS5116265B1 (ja) 1976-05-22

Family

ID=22247621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46097287A Pending JPS5116265B1 (ja) 1970-12-03 1971-12-03

Country Status (18)

Country Link
US (1) US3719866A (ja)
JP (1) JPS5116265B1 (ja)
AT (1) AT336681B (ja)
AU (1) AU450552B2 (ja)
BE (1) BE776013A (ja)
BR (1) BR7107965D0 (ja)
CA (1) CA950126A (ja)
CH (1) CH535495A (ja)
DE (1) DE2159192B2 (ja)
DK (1) DK132145C (ja)
ES (1) ES397549A1 (ja)
FR (1) FR2116410B1 (ja)
GB (1) GB1315230A (ja)
IT (1) IT941940B (ja)
NL (1) NL175772C (ja)
NO (1) NO131563C (ja)
SE (1) SE364598B (ja)
ZA (1) ZA717690B (ja)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5145438B1 (ja) * 1971-06-25 1976-12-03
JPS5329075B2 (ja) * 1972-02-12 1978-08-18
GB1363190A (en) * 1972-05-31 1974-08-14 Plessey Co Ltd Semiconductor memory device
US3845327A (en) * 1972-08-16 1974-10-29 Westinghouse Electric Corp Counter with memory utilizing mnos memory elements
US3877055A (en) * 1972-11-13 1975-04-08 Motorola Inc Semiconductor memory device
FR2228251B1 (ja) * 1973-05-04 1980-04-04 Commissariat Energie Atomique
US3911464A (en) * 1973-05-29 1975-10-07 Ibm Nonvolatile semiconductor memory
US3947863A (en) * 1973-06-29 1976-03-30 Motorola Inc. Charge coupled device with electrically settable shift direction
JPS5024084A (ja) * 1973-07-05 1975-03-14
DE2638730C2 (de) * 1974-09-20 1982-10-28 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET, Verfahren zum Entladen des Speichergate des n-Kanal-Speicher-FET und Verwendung des n-Kanal-Speicher-FET
DE2445079C3 (de) * 1974-09-20 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Speicher-Feldeffekttransistor
GB1540450A (en) * 1975-10-29 1979-02-14 Intel Corp Self-aligning double polycrystalline silicon etching process
US4057821A (en) * 1975-11-20 1977-11-08 Nitron Corporation/Mcdonnell-Douglas Corporation Non-volatile semiconductor memory device
US4115914A (en) * 1976-03-26 1978-09-26 Hughes Aircraft Company Electrically erasable non-volatile semiconductor memory
US4096509A (en) * 1976-07-22 1978-06-20 The United States Of America As Represented By The Secretary Of The Air Force MNOS memory transistor having a redeposited silicon nitride gate dielectric
US5434438A (en) * 1976-09-13 1995-07-18 Texas Instruments Inc. Random access memory cell with a capacitor
US5168075A (en) * 1976-09-13 1992-12-01 Texas Instruments Incorporated Random access memory cell with implanted capacitor region
US4098924A (en) * 1976-10-19 1978-07-04 Westinghouse Electric Corp. Gate fabrication method for mnos memory devices
DE2723738C2 (de) * 1977-05-26 1984-11-08 Deutsche Itt Industries Gmbh, 7800 Freiburg Halbleiterspeicherzelle für das nichtflüchtige Speichern elektrischer Ladung und Verfahren zu deren Programmierung
US4307411A (en) * 1978-01-30 1981-12-22 Rca Corporation Nonvolatile semiconductor memory device and method of its manufacture
US4151538A (en) * 1978-01-30 1979-04-24 Rca Corp. Nonvolatile semiconductive memory device and method of its manufacture
US4236167A (en) * 1978-02-06 1980-11-25 Rca Corporation Stepped oxide, high voltage MOS transistor with near intrinsic channel regions of different doping levels
US4198252A (en) * 1978-04-06 1980-04-15 Rca Corporation MNOS memory device
US4268328A (en) * 1978-04-21 1981-05-19 Mcdonnell Douglas Corporation Stripped nitride MOS/MNOS process
US4611308A (en) * 1978-06-29 1986-09-09 Westinghouse Electric Corp. Drain triggered N-channel non-volatile memory
US4318216A (en) * 1978-11-13 1982-03-09 Rca Corporation Extended drain self-aligned silicon gate MOSFET
US4232327A (en) * 1978-11-13 1980-11-04 Rca Corporation Extended drain self-aligned silicon gate MOSFET
WO1980001122A1 (en) * 1978-11-27 1980-05-29 Ncr Co Semiconductor memory device
US4250206A (en) * 1978-12-11 1981-02-10 Texas Instruments Incorporated Method of making non-volatile semiconductor memory elements
US4353083A (en) * 1978-11-27 1982-10-05 Ncr Corporation Low voltage nonvolatile memory device
WO1981000487A1 (en) * 1979-08-13 1981-02-19 Ncr Co Hydrogen annealing process for silicon gate memory device
US4558344A (en) * 1982-01-29 1985-12-10 Seeq Technology, Inc. Electrically-programmable and electrically-erasable MOS memory device
US4455742A (en) * 1982-06-07 1984-06-26 Westinghouse Electric Corp. Method of making self-aligned memory MNOS-transistor
US5120672A (en) * 1989-02-22 1992-06-09 Texas Instruments Incorporated Fabricating a single level merged EEPROM cell having an ONO memory stack substantially spaced from the source region
US5057885A (en) * 1989-07-28 1991-10-15 Casio Computer Co., Ltd. Memory cell system with first and second gates
US5215934A (en) * 1989-12-21 1993-06-01 Tzeng Jyh Cherng J Process for reducing program disturbance in eeprom arrays
US5679968A (en) * 1990-01-31 1997-10-21 Texas Instruments Incorporated Transistor having reduced hot carrier implantation
US5844271A (en) * 1995-08-21 1998-12-01 Cypress Semiconductor Corp. Single layer polycrystalline silicon split-gate EEPROM cell having a buried control gate
US5741737A (en) 1996-06-27 1998-04-21 Cypress Semiconductor Corporation MOS transistor with ramped gate oxide thickness and method for making same
US5897354A (en) * 1996-12-17 1999-04-27 Cypress Semiconductor Corporation Method of forming a non-volatile memory device with ramped tunnel dielectric layer
US6121666A (en) * 1997-06-27 2000-09-19 Sun Microsystems, Inc. Split gate oxide asymmetric MOS devices
US6124171A (en) * 1998-09-24 2000-09-26 Intel Corporation Method of forming gate oxide having dual thickness by oxidation process
US6225669B1 (en) * 1998-09-30 2001-05-01 Advanced Micro Devices, Inc. Non-uniform gate/dielectric field effect transistor
US6740944B1 (en) * 2001-07-05 2004-05-25 Altera Corporation Dual-oxide transistors for the improvement of reliability and off-state leakage
US7755162B2 (en) 2004-05-06 2010-07-13 Sidense Corp. Anti-fuse memory cell
US8735297B2 (en) 2004-05-06 2014-05-27 Sidense Corporation Reverse optical proximity correction method
JP4981661B2 (ja) * 2004-05-06 2012-07-25 サイデンス コーポレーション 分割チャネルアンチヒューズアレイ構造
US9123572B2 (en) 2004-05-06 2015-09-01 Sidense Corporation Anti-fuse memory cell
US10276679B2 (en) * 2017-05-30 2019-04-30 Vanguard International Semiconductor Corporation Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
FR2116410A1 (ja) 1972-07-13
FR2116410B1 (ja) 1977-04-22
ES397549A1 (es) 1975-03-16
NO131563C (ja) 1975-06-18
NO131563B (ja) 1975-03-10
CA950126A (en) 1974-06-25
DK132145C (da) 1976-03-22
ATA1036871A (de) 1976-09-15
NL175772B (nl) 1984-07-16
GB1315230A (en) 1973-05-02
DK132145B (da) 1975-10-27
CH535495A (de) 1973-03-31
BR7107965D0 (pt) 1973-05-15
DE2159192B2 (de) 1978-04-20
DE2159192A1 (de) 1972-06-08
AT336681B (de) 1977-05-25
US3719866A (en) 1973-03-06
AU3591571A (en) 1973-05-24
ZA717690B (en) 1972-08-30
NL175772C (nl) 1984-12-17
AU450552B2 (en) 1974-07-11
SE364598B (ja) 1974-02-25
BE776013A (fr) 1972-03-16
IT941940B (it) 1973-03-10
NL7116675A (ja) 1972-06-06

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