CH522290A - Verfahren zur Getterung schnell diffundierender Verunreinigungen in Halbleiterkristallen - Google Patents

Verfahren zur Getterung schnell diffundierender Verunreinigungen in Halbleiterkristallen

Info

Publication number
CH522290A
CH522290A CH1869869A CH1869869A CH522290A CH 522290 A CH522290 A CH 522290A CH 1869869 A CH1869869 A CH 1869869A CH 1869869 A CH1869869 A CH 1869869A CH 522290 A CH522290 A CH 522290A
Authority
CH
Switzerland
Prior art keywords
gettering
semiconductor crystals
diffusing impurities
rapidly diffusing
rapidly
Prior art date
Application number
CH1869869A
Other languages
English (en)
Inventor
Sirtl Erhard Dr Dipl-Chem
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681816083 external-priority patent/DE1816083C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH522290A publication Critical patent/CH522290A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3228—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of AIIIBV compounds, e.g. to make them semi-insulating
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01D—HARVESTING; MOWING
    • A01D19/00—Digging machines with centrifugal wheels, drums or spinners
    • A01D19/04—Digging machines with centrifugal wheels, drums or spinners with working tools rotating around a horizontal axis arranged parallel to the direction of travel
    • A01D19/06—Digging machines with centrifugal wheels, drums or spinners with working tools rotating around a horizontal axis arranged parallel to the direction of travel with scoop wheels or drums
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
CH1869869A 1968-12-20 1969-12-16 Verfahren zur Getterung schnell diffundierender Verunreinigungen in Halbleiterkristallen CH522290A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681816083 DE1816083C3 (de) 1968-12-20 Verfahren zur Getterung schnell diffundierender Verunreinigungen in Halbleiterkristallscheiben

Publications (1)

Publication Number Publication Date
CH522290A true CH522290A (de) 1972-06-15

Family

ID=5716946

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1869869A CH522290A (de) 1968-12-20 1969-12-16 Verfahren zur Getterung schnell diffundierender Verunreinigungen in Halbleiterkristallen

Country Status (6)

Country Link
AT (1) AT311419B (de)
CH (1) CH522290A (de)
FR (1) FR2026656B1 (de)
GB (1) GB1267700A (de)
NL (1) NL6918858A (de)
SE (1) SE363243B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1307546A (en) * 1970-05-22 1973-02-21 Mullard Ltd Methods of manufacturing semiconductor devices
EP0323432A1 (de) * 1987-12-30 1989-07-05 Monsanto Company GaAs-polykristallinische Getterung

Also Published As

Publication number Publication date
GB1267700A (en) 1972-03-22
FR2026656A1 (de) 1970-09-18
AT311419B (de) 1973-11-12
FR2026656B1 (de) 1975-04-18
DE1816083A1 (de) 1970-06-25
SE363243B (de) 1974-01-14
DE1816083B2 (de) 1976-05-13
NL6918858A (de) 1970-06-23

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Legal Events

Date Code Title Description
PL Patent ceased