AT305377B - Verfahren zur Herstellen von mit Gallium diffundierten Zonen in Halbleiterkristallen - Google Patents

Verfahren zur Herstellen von mit Gallium diffundierten Zonen in Halbleiterkristallen

Info

Publication number
AT305377B
AT305377B AT344470A AT344470A AT305377B AT 305377 B AT305377 B AT 305377B AT 344470 A AT344470 A AT 344470A AT 344470 A AT344470 A AT 344470A AT 305377 B AT305377 B AT 305377B
Authority
AT
Austria
Prior art keywords
gallium
production
semiconductor crystals
diffused
zones
Prior art date
Application number
AT344470A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT305377B publication Critical patent/AT305377B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
AT344470A 1969-04-17 1970-04-15 Verfahren zur Herstellen von mit Gallium diffundierten Zonen in Halbleiterkristallen AT305377B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691919563 DE1919563A1 (de) 1969-04-17 1969-04-17 Verfahren zum Herstellen von mit Gallium diffundierten Zonen in Halbleiterkristallen

Publications (1)

Publication Number Publication Date
AT305377B true AT305377B (de) 1973-02-26

Family

ID=5731498

Family Applications (1)

Application Number Title Priority Date Filing Date
AT344470A AT305377B (de) 1969-04-17 1970-04-15 Verfahren zur Herstellen von mit Gallium diffundierten Zonen in Halbleiterkristallen

Country Status (9)

Country Link
US (1) US3642545A (de)
JP (1) JPS4914782B1 (de)
AT (1) AT305377B (de)
CH (1) CH533361A (de)
DE (1) DE1919563A1 (de)
FR (1) FR2043237A5 (de)
GB (1) GB1241397A (de)
NL (1) NL7003632A (de)
SE (1) SE351570B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3775262A (en) * 1972-02-09 1973-11-27 Ncr Method of making insulated gate field effect transistor
DE9308058U1 (de) * 1993-05-28 1993-08-19 Hewlett-Packard GmbH, 71034 Böblingen Ventil
KR100358056B1 (ko) * 1999-12-27 2002-10-25 주식회사 하이닉스반도체 반도체 소자의 게이트 산화막 형성방법
US7253467B2 (en) * 2001-06-28 2007-08-07 Samsung Electronics Co., Ltd. Non-volatile semiconductor memory devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2989421A (en) * 1957-06-18 1961-06-20 Union Carbide Corp Gas plating of inert compounds on quartz crucibles
US2972555A (en) * 1958-11-07 1961-02-21 Union Carbide Corp Gas plating of alumina
US3009841A (en) * 1959-03-06 1961-11-21 Westinghouse Electric Corp Preparation of semiconductor devices having uniform junctions
US3410710A (en) * 1959-10-16 1968-11-12 Corning Glass Works Radiation filters
US3326729A (en) * 1963-08-20 1967-06-20 Hughes Aircraft Co Epitaxial method for the production of microcircuit components
DE1514807B2 (de) * 1964-04-15 1971-09-02 Texas Instruments Inc., Dallas. Tex. (V.St.A.) Verfahren zum herstellen einer planaren halbleiteranordnung
US3503813A (en) * 1965-12-15 1970-03-31 Hitachi Ltd Method of making a semiconductor device

Also Published As

Publication number Publication date
DE1919563A1 (de) 1970-10-29
CH533361A (de) 1973-01-31
US3642545A (en) 1972-02-15
GB1241397A (en) 1971-08-04
NL7003632A (de) 1970-10-20
SE351570B (de) 1972-12-04
JPS4914782B1 (de) 1974-04-10
FR2043237A5 (de) 1971-02-12

Similar Documents

Publication Publication Date Title
CH537213A (de) Verfahren zur Herstellung von eingekapselten Stoffen
CH515614A (de) Verfahren zum Herstellen von Halbleiterschaltkreisen mit Leitbahnen
AT305417B (de) Verfahren zur Herstellung von Schaltkreisen
CH502182A (de) Verfahren zur Herstellung von Gummiartikeln und danach hergestellter Gummiartikel
CH530990A (de) Verfahren zur Herstellung von Bistriazolyl-bisphenyl-methanen und deren Salzen
AT305313B (de) Verfahren zur Herstellung von Ammoniak
CH509823A (de) Verfahren zur Herstellung von Einkristallen
AT305377B (de) Verfahren zur Herstellen von mit Gallium diffundierten Zonen in Halbleiterkristallen
AT299141B (de) Verfahren zur Herstellung von 2-Äthylhexanol
CH440227A (de) Verfahren zum Herstellen von Halbleiterkristallen, mit einstellbarer Fremdstoffkonzentration
CH522956A (de) Verfahren zur Herstellung von Halbleiter-Anordnungen und nach diesem Verfahren hergestellte Halbleiter-Anordnung
CH464152A (de) Verfahren zur Wärmebehandlung von Halbleitereinkristallen
AT300347B (de) Verfahren zur Herstellung von Acetoxymonomethylsiloxan-diphenylsiloxan-Mischpolymerisaten
AT305722B (de) Verfahren zur Metallisierung von Kunststoffen
CH542176A (de) Verfahren zur Herstellung von Polyaminen
CH515211A (de) Verfahren zur Herstellung von Diaminen und deren Salzen
CH531257A (de) Verfahren zur Herstellung von Halbleiter-Gleichrichter-Anordnungen
AT308027B (de) Verfahren zur Herstellung von agglomerierter Fructose
CH484744A (de) Verfahren zur Herstellung von Sandwichgebilden
AT306715B (de) Verfahren zur Herstellung von ω-Lactamen
AT320030B (de) Verfahren zum Herstellen von Feldeffekttransistoren mit p-dotierten Zonen mit unterschiedlichen Eindringtiefen in Silizium
CH455054A (de) Verfahren zur Herstellung von Planartransistoren
CH543487A (de) Verfahren zur Herstellung von Adamantylharnstoffen
AT296226B (de) Verfahren zur Herstellung von hochreinem Galliumarsenid
CH494065A (de) Verfahren zur Herstellung von Halbleiterkristallen