AT296226B - Verfahren zur Herstellung von hochreinem Galliumarsenid - Google Patents
Verfahren zur Herstellung von hochreinem GalliumarsenidInfo
- Publication number
- AT296226B AT296226B AT17770A AT17770A AT296226B AT 296226 B AT296226 B AT 296226B AT 17770 A AT17770 A AT 17770A AT 17770 A AT17770 A AT 17770A AT 296226 B AT296226 B AT 296226B
- Authority
- AT
- Austria
- Prior art keywords
- production
- high purity
- gallium arsenide
- purity gallium
- arsenide
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G28/00—Compounds of arsenic
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G28/00—Compounds of arsenic
- C01G28/02—Arsenates; Arsenites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691901319 DE1901319A1 (de) | 1969-01-11 | 1969-01-11 | Verfahren zur Herstellung von hochreinem Galliumarsenid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT296226B true AT296226B (de) | 1972-02-10 |
Family
ID=5722204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT17770A AT296226B (de) | 1969-01-11 | 1970-01-09 | Verfahren zur Herstellung von hochreinem Galliumarsenid |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3657004A (de) |
| JP (1) | JPS4823276B1 (de) |
| AT (1) | AT296226B (de) |
| DE (1) | DE1901319A1 (de) |
| FR (1) | FR2031071A5 (de) |
| GB (1) | GB1286062A (de) |
| NL (1) | NL6915959A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3951728A (en) * | 1974-07-30 | 1976-04-20 | Hitachi, Ltd. | Method of treating semiconductor wafers |
| SE432162B (sv) * | 1976-04-22 | 1984-03-19 | Fujitsu Ltd | Forfarande for att utifran en anga bringa en tunn film att tillvexa |
| US4946543A (en) * | 1986-06-02 | 1990-08-07 | Kalisher Murray H | Method and apparatus for growing films on a substrate |
| US5202283A (en) * | 1991-02-19 | 1993-04-13 | Rockwell International Corporation | Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL279828A (de) * | 1961-07-05 | |||
| NL291914A (de) * | 1962-04-25 | |||
| DE1250789B (de) * | 1962-07-09 | 1967-09-28 | Western Electric Company Incorporated, New York, N.Y. (V. St. A.) | Verfahren zum Züchten eines epitaktisch gewachsenen Einkristalles mit Hilfe einer Transportreaktion |
| DE1273484B (de) * | 1963-08-01 | 1968-07-25 | Siemens Ag | Verfahren zum Herstellen von reinem, gegebenenfalls dotiertem Halbleitermaterial mittels Transportreaktionen |
| US3397094A (en) * | 1965-03-25 | 1968-08-13 | James E. Webb | Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere |
-
1969
- 1969-01-11 DE DE19691901319 patent/DE1901319A1/de active Pending
- 1969-10-22 NL NL6915959A patent/NL6915959A/xx unknown
-
1970
- 1970-01-05 FR FR7000118A patent/FR2031071A5/fr not_active Expired
- 1970-01-08 US US1399A patent/US3657004A/en not_active Expired - Lifetime
- 1970-01-09 AT AT17770A patent/AT296226B/de not_active IP Right Cessation
- 1970-01-12 JP JP45002940A patent/JPS4823276B1/ja active Pending
- 1970-01-12 GB GB0354/70A patent/GB1286062A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL6915959A (de) | 1970-07-14 |
| FR2031071A5 (de) | 1970-11-13 |
| US3657004A (en) | 1972-04-18 |
| GB1286062A (en) | 1972-08-16 |
| JPS4823276B1 (de) | 1973-07-12 |
| DE1901319A1 (de) | 1970-08-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |