JPS4823276B1 - - Google Patents

Info

Publication number
JPS4823276B1
JPS4823276B1 JP45002940A JP294070A JPS4823276B1 JP S4823276 B1 JPS4823276 B1 JP S4823276B1 JP 45002940 A JP45002940 A JP 45002940A JP 294070 A JP294070 A JP 294070A JP S4823276 B1 JPS4823276 B1 JP S4823276B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45002940A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4823276B1 publication Critical patent/JPS4823276B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G28/00—Compounds of arsenic
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G28/00—Compounds of arsenic
    • C01G28/02—Arsenates; Arsenites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
JP45002940A 1969-01-11 1970-01-12 Pending JPS4823276B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691901319 DE1901319A1 (de) 1969-01-11 1969-01-11 Verfahren zur Herstellung von hochreinem Galliumarsenid

Publications (1)

Publication Number Publication Date
JPS4823276B1 true JPS4823276B1 (ja) 1973-07-12

Family

ID=5722204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45002940A Pending JPS4823276B1 (ja) 1969-01-11 1970-01-12

Country Status (7)

Country Link
US (1) US3657004A (ja)
JP (1) JPS4823276B1 (ja)
AT (1) AT296226B (ja)
DE (1) DE1901319A1 (ja)
FR (1) FR2031071A5 (ja)
GB (1) GB1286062A (ja)
NL (1) NL6915959A (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3951728A (en) * 1974-07-30 1976-04-20 Hitachi, Ltd. Method of treating semiconductor wafers
US4179326A (en) * 1976-04-22 1979-12-18 Fujitsu Limited Process for the vapor growth of a thin film
US4946543A (en) * 1986-06-02 1990-08-07 Kalisher Murray H Method and apparatus for growing films on a substrate
US5202283A (en) * 1991-02-19 1993-04-13 Rockwell International Corporation Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL279828A (ja) * 1961-07-05
NL291914A (ja) * 1962-04-25
NL292373A (ja) * 1962-07-09
DE1273484B (de) * 1963-08-01 1968-07-25 Siemens Ag Verfahren zum Herstellen von reinem, gegebenenfalls dotiertem Halbleitermaterial mittels Transportreaktionen
US3397094A (en) * 1965-03-25 1968-08-13 James E. Webb Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere

Also Published As

Publication number Publication date
GB1286062A (en) 1972-08-16
US3657004A (en) 1972-04-18
FR2031071A5 (ja) 1970-11-13
NL6915959A (ja) 1970-07-14
DE1901319A1 (de) 1970-08-06
AT296226B (de) 1972-02-10

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