GB1267700A - Improvements in or relating to semiconductors - Google Patents

Improvements in or relating to semiconductors

Info

Publication number
GB1267700A
GB1267700A GB6140869A GB6140869A GB1267700A GB 1267700 A GB1267700 A GB 1267700A GB 6140869 A GB6140869 A GB 6140869A GB 6140869 A GB6140869 A GB 6140869A GB 1267700 A GB1267700 A GB 1267700A
Authority
GB
United Kingdom
Prior art keywords
gettering
semi
conductor
dec
fast
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6140869A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681816083 external-priority patent/DE1816083C3/de
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1267700A publication Critical patent/GB1267700A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3228Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of AIIIBV compounds, e.g. to make them semi-insulating
    • AHUMAN NECESSITIES
    • A01AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01DHARVESTING; MOWING
    • A01D19/00Digging machines with centrifugal wheels, drums or spinners
    • A01D19/04Digging machines with centrifugal wheels, drums or spinners with working tools rotating around a horizontal axis arranged parallel to the direction of travel
    • A01D19/06Digging machines with centrifugal wheels, drums or spinners with working tools rotating around a horizontal axis arranged parallel to the direction of travel with scoop wheels or drums
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
GB6140869A 1968-12-20 1969-12-17 Improvements in or relating to semiconductors Expired GB1267700A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681816083 DE1816083C3 (de) 1968-12-20 Verfahren zur Getterung schnell diffundierender Verunreinigungen in Halbleiterkristallscheiben

Publications (1)

Publication Number Publication Date
GB1267700A true GB1267700A (en) 1972-03-22

Family

ID=5716946

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6140869A Expired GB1267700A (en) 1968-12-20 1969-12-17 Improvements in or relating to semiconductors

Country Status (6)

Country Link
AT (1) AT311419B (de)
CH (1) CH522290A (de)
FR (1) FR2026656B1 (de)
GB (1) GB1267700A (de)
NL (1) NL6918858A (de)
SE (1) SE363243B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1307546A (en) * 1970-05-22 1973-02-21 Mullard Ltd Methods of manufacturing semiconductor devices
JPH01214127A (ja) * 1987-12-30 1989-08-28 Monsanto Co 単結晶ガリウムヒ素半導体基板

Also Published As

Publication number Publication date
FR2026656A1 (de) 1970-09-18
CH522290A (de) 1972-06-15
NL6918858A (de) 1970-06-23
AT311419B (de) 1973-11-12
DE1816083B2 (de) 1976-05-13
SE363243B (de) 1974-01-14
DE1816083A1 (de) 1970-06-25
FR2026656B1 (de) 1975-04-18

Similar Documents

Publication Publication Date Title
GB1227705A (de)
GB949799A (en) Process for the production of crystalline semi-conductor material
GB1454237A (en) Method for manufacturing a semiconductor device
GB1118757A (en) Method of depositing silicon nitride films
US3506508A (en) Use of gas etching under vacuum pressure for purifying silicon
GB1314041A (en) Apparatus for processing semiconductor material
JPS5766625A (en) Manufacture of film
GB1267700A (en) Improvements in or relating to semiconductors
GB2034113A (en) Open tube aluminium diffusion
GB1358438A (en) Process for the manufacture of a semiconductor component or an integrated semiconductor circuit
GB929559A (en) Method of growing epitaxial semiconductor layers
GB1132491A (en) Improvements in or relating to the manufacture of semiconductor systems
GB1397684A (en) Diffusion of impurity into semiconductor material
GB995543A (en) Method for producing semiconductor films on semiconductor substrates
GB1190992A (en) Improved method of Depositing Semiconductor Material
GB998825A (en) Method of building up a crystalline material
GB1255576A (en) Improvements in or relating to the production of epitaxially grown layers of semiconductor material
US3473980A (en) Significant impurity sources for solid state diffusion
US3036006A (en) Method of doping a silicon monocrystal
GB1035499A (en) Process for the manufacture of crystalline layers from low volatility substances in the gas phase
JPS57122515A (en) Manufacture of semiconductor device
GB1115101A (en) Improvements in or relating to the manufacture of semiconductor bodies
US3239393A (en) Method for producing semiconductor articles
KR0118458B1 (ko) 웨이퍼 언로딩 방법
JPS6447850A (en) Manufacture of thermoelement