CH442529A - Verwendung eines aus Galliumarsenid bestehenden Halbleitermaterials zur Herstellung elektrischer Halbleiterelemente - Google Patents

Verwendung eines aus Galliumarsenid bestehenden Halbleitermaterials zur Herstellung elektrischer Halbleiterelemente

Info

Publication number
CH442529A
CH442529A CH640661A CH640661A CH442529A CH 442529 A CH442529 A CH 442529A CH 640661 A CH640661 A CH 640661A CH 640661 A CH640661 A CH 640661A CH 442529 A CH442529 A CH 442529A
Authority
CH
Switzerland
Prior art keywords
production
gallium arsenide
material consisting
semiconductor material
electrical
Prior art date
Application number
CH640661A
Other languages
English (en)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CH442529A publication Critical patent/CH442529A/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
CH640661A 1960-01-20 1961-06-01 Verwendung eines aus Galliumarsenid bestehenden Halbleitermaterials zur Herstellung elektrischer Halbleiterelemente CH442529A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3679A US3391308A (en) 1960-01-20 1960-01-20 Tin as a dopant in gallium arsenide crystals
US53509A US3012175A (en) 1960-01-20 1960-09-01 Contact for gallium arsenide

Publications (1)

Publication Number Publication Date
CH442529A true CH442529A (de) 1967-08-31

Family

ID=26672052

Family Applications (2)

Application Number Title Priority Date Filing Date
CH71261A CH413111A (de) 1960-01-20 1961-01-20 Verfahren zur Herstellung eines Transistors
CH640661A CH442529A (de) 1960-01-20 1961-06-01 Verwendung eines aus Galliumarsenid bestehenden Halbleitermaterials zur Herstellung elektrischer Halbleiterelemente

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CH71261A CH413111A (de) 1960-01-20 1961-01-20 Verfahren zur Herstellung eines Transistors

Country Status (6)

Country Link
US (2) US3391308A (de)
CH (2) CH413111A (de)
DE (1) DE1293905B (de)
GB (2) GB978561A (de)
MY (1) MY6900313A (de)
NL (2) NL265436A (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1163974B (de) * 1960-09-26 1964-02-27 Gen Electric Tunneldiode mit einem Halbleiterkoerper aus Galliumarsenid und Verfahren zum Herstellen
US3110849A (en) * 1960-10-03 1963-11-12 Gen Electric Tunnel diode device
US3214654A (en) * 1961-02-01 1965-10-26 Rca Corp Ohmic contacts to iii-v semiconductive compound bodies
US3274453A (en) * 1961-02-20 1966-09-20 Philco Corp Semiconductor integrated structures and methods for the fabrication thereof
NL275516A (de) * 1961-03-02
US3260115A (en) * 1962-05-18 1966-07-12 Bell Telephone Labor Inc Temperature sensitive element
US3259815A (en) * 1962-06-28 1966-07-05 Texas Instruments Inc Gallium arsenide body containing copper
US3271636A (en) * 1962-10-23 1966-09-06 Bell Telephone Labor Inc Gallium arsenide semiconductor diode and method
US3245848A (en) * 1963-07-11 1966-04-12 Hughes Aircraft Co Method for making a gallium arsenide transistor
US3314830A (en) * 1964-08-03 1967-04-18 Texas Instruments Inc Semiconductor contact alloy
GB1095047A (en) * 1964-09-09 1967-12-13 Westinghouse Brake & Signal Semi-conductor devices and the manufacture thereof
US3324361A (en) * 1964-12-11 1967-06-06 Texas Instruments Inc Semiconductor contact alloy
US3386867A (en) * 1965-09-22 1968-06-04 Ibm Method for providing electrical contacts to a wafer of gaas
US3479573A (en) * 1967-02-15 1969-11-18 Gen Electric Wide band gap semiconductor devices having improved temperature independent non-rectifying contacts
US3539883A (en) * 1967-03-15 1970-11-10 Ion Physics Corp Antireflection coatings for semiconductor devices
DE2025773B2 (de) * 1970-05-26 1972-04-13 Siemens AG, 1000 Berlin u. 8000 München Detektor fuer elektromagnetische strahlung
US4372032A (en) * 1979-09-04 1983-02-08 The United States Of America As Represented By The Secretary Of The Navy Normally off InP field effect transistor making process

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE970420C (de) * 1951-03-10 1958-09-18 Siemens Ag Elektrisches Halbleitergeraet
US2847335A (en) * 1953-09-15 1958-08-12 Siemens Ag Semiconductor devices and method of manufacturing them
US2928761A (en) * 1954-07-01 1960-03-15 Siemens Ag Methods of producing junction-type semi-conductor devices
FR1184921A (fr) * 1957-10-21 1959-07-28 Perfectionnements aux procédés de fabrication par alliage de redresseurs ou de transistrons à jonctions
FR1193194A (fr) * 1958-03-12 1959-10-30 Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions
US2974072A (en) * 1958-06-27 1961-03-07 Ibm Semiconductor connection fabrication
US3187193A (en) * 1959-10-15 1965-06-01 Rca Corp Multi-junction negative resistance semiconducting devices

Also Published As

Publication number Publication date
CH413111A (de) 1966-05-15
DE1293905B (de) 1969-04-30
MY6900313A (en) 1969-12-31
NL260298A (de)
US3012175A (en) 1961-12-05
NL265436A (de)
GB978561A (en) 1964-12-23
GB983840A (en) 1965-02-17
US3391308A (en) 1968-07-02

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